Breakdown Phenomena in Semiconductors and Semiconductor Devices

Let us consider the following simple situation. An electron is injected into a sample of length L with a homogeneous field F (Fig. 2.1). Let us suppose that at this given field F the electron ionization rate ? i is much larger than the hole ionization rate ( ? i >> ? i), so that ? iL, >> 1 but / ? iL << 1 This means that the electron performs numerous elementary acts of impact ionization as it passes through the sample. On the other hand, the probability of a hole making even one act of impact ionization is practically zero.
In this simplest case we have
| (2.1) | |
and a multiplication factor M n for electrons injected at the cathode M n = i n( L) /j n(0) is equal to
| (2.2) | |
For a non-homogeneous field distribution across the sample:
| (2.3) | |
It is worth noting that in this simplest case ( ? iL << 1) the multiplication factor M is always a finite value. It may be...