SiC Materials And Devices, Volume 1
With contributions by recognized leaders in SiC technology and materials and device research, this book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices.
TABLE OF CONTENTS SiC Materials And Devices, Volume 1
SiC Material Properties
Gerhard Pensl,
Institute of Applied Physics, University of Erlangen-Nurnberg, Staudtstrasse 7
gerhard.pensl@physik.uni-erlangen.de
Florin Ciobanu Thomas Frank Michael Krieger Sergey Reshanov Frank Schmid Michael Weidner, Institute of Applied Physics, University of Erlangen-Nurnberg, Staudtstrasse 7
D-91058. Erlangen, Germany
This chapter briefly summarizes device-relevant material properties of the wide bandgap semiconductor silicon carbide. The polytypes 4H-, 6H- and 3C-SiC are predominantly considered. These SiC polytypes can reproducibly be grown as single crystals; they have superior electronic and thermal material properties. The conductivity type can be adjusted by shallow donors and acceptors. Special sections are related to the diffusion of dopants, to the impurity conduction, to the minority carrier lifetime and to the different types of traps generated at the interface of thermally grown SiC/SiO2 structures.
1 Introduction
Silicon carbide (SiC) has a long and famous history. The first observation of SiC or at least of a Si-C-bond containing compound goes back to J ns Jakob Berzelius, Professor in chemistry at the Karolinska Institute in Stockholm. [1] In 1823, Berzelius burnt an unknown compound and observed an equal number of silicon (Si) and carbon (C) atoms. Nowadays, SiC has developed into one of the leading contenders among the wide bandgap semiconductors. This leading role is due to the fact that
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large SiC substrates are commercially available (3 inch in diameter),
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SiC can homoepitaxially be grown avoiding lattice mismatch,
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n- and p-type conductivity can be achieved either by doping during crystal growth or afterwards by ion implantation and
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oxide films can thermally be grown on both the Si- and C-face.
SiC has a...
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