SiC Materials And Devices, Volume 1
With contributions by recognized leaders in SiC technology and materials and device research, this book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices.
TABLE OF CONTENTS SiC Materials And Devices, Volume 1
Silicon Carbide Schottky Barrier Diode
Jian H. Zhao Kuang Sheng,
SiCLAB, Rutgers University,
NASA Glenn Research Center,
SiCLAB, Rutgers University,
94 Brett Road, Piscataway,, NJ 08854,. USA
Ramon C. Lebron-Velilla, NASA Glenn Research Center,
21000 Brookpark Road, Cleaveland,, OH 44135,. USA
This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.
1 Introduction
Silicon Carbide was one of the earliest semiconductor materials discovered. However, due to the difficulties of growing good quality crystals, the progress of SiC devices has lagged behind those of its counterpart materials. In recent years, SiC devices development have enjoyed remarkable progress and demonstrated significant advantages over Si devices in the area of high power electronics due to its superior physical and electrical properties.
With a significantly wider band gap (2.3eV for 3C-SiC, 2.9eV for 6H-SiC and 3.2eV for 4H-SiC) than silicon, the critical field of SiC is approximately eight to ten times higher than that of the latter. As a result, SiC high voltage devices can be realized on much thinner drift layers with higher doping, leading to orders-of-magnitude lower device on-state resistance.
Silicon Carbide (SiC) Schottky Barrier Diode (SBD) was the first SiC power device demonstrated.
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