SiC Materials And Devices, Volume 1
With contributions by recognized leaders in SiC technology and materials and device research, this book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices.
TABLE OF CONTENTS SiC Materials And Devices, Volume 1
7: Conclusion
7 Conclusion
Recent achievements in the silicon carbide technology resulted in the improvement of all main parameters of bipolar SiC devices.
The reduction in the "micropipe" density caused the increase of the operation area of SiC power devices [102].
SiC layers with the low level of compensation and donor concentration (N d N a) 10 14 cm ?3 have been obtained. The p + n junctions on the base of these layers are able to block voltages higher than 20 kV [103].
High level of structural perfection and low concentration of the deep traps provide lifetime of the nonequilibrium carriers as high as several hundreds nanoseconds at room temperature and several microseconds at elevated temperatures in thick ( 200 / ?m) 4H SiC layers. So high lifetimes of minority carriers cause the effective modulation of the low doped bases in high voltage bipolar devices at high forward current densities.
These achievements demonstrate clearly that all potential advantages of SiC devices declared for many decades have been already demonstrated experimentally. All main physical features of SiC thyristors such as turn-on and turn-off processes, steady-state current voltage characteristics, frequency properties, and critical charge peculiarities have been analyzed and successfully explained.
[102]R. Singh, D.C. Capell, K.G. Irvine, J.T. Richmond, J.W. Palmour "7.4 kV, 330 A (pulsed), single chip, high temperature 4H-SiC pin rectifier" Electron. Lett., 38 (26), 1738-1740 (2002)
[103]Y. Sugawara, D. Takayama, K.
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