Photonics and Lasers

Chapter 14.4.2 - Schottky Photodiode

 

Schottky Photodiode

The PIN and avalanche photodiodes discussed in the previous two sections are both p-n-junction-based devices. In contrast, the Schottky photodiode utilizes a metal-semiconductor junction to separate and collect the photogenerated charge carriers. Fig. 14-16 illustrates the operation of a Schottky photodiode for the metal-n-n+ configuration, the most common type. Photons pass through a partially transparent metallic layer (often gold), and are absorbed in the n-type semiconductor. Charge carriers generated within the depletion region are efficiently swept out by the built-in electric field (see Fig. 10-17), giving rise to a photocurrent i . Just as for a PIN photodiode, the diffusion tail in the time response can be minimized by adjusting the donor concentration NDin the n-type region so that the depletion region extends all the way through to the n+ layer. Apart from the lack of a p-type layer, the structure and operation of a Schottky photodiode is similar to that of a PIN photodiode.

Schottky photodiodes have some advantages over PIN photodiodes for certain applications. One advantage is a practical issue in manufacturing the devices. In connecting the Schottky photodiode with wires in the external circuit, only one metal-semiconductor connection needs to be made (metal-n+), and ohmic contacts are readily formed for such a junction. Another advantage of the Schottky photodiode is an improved time response. Since it lacks the p-type layer of a PIN photodiode, there is no remnant diffusion tail arising from charge carriers generated in the p-type layer. This becomes especially important at short wavelengths, at which the large absorption coefficient would result in a significant fraction of the light being absorbed in the thin p-type layer of a PIN photodiode. Schottky photodiodes with bandwidths in the range 25-60 GHz are commercially available.

A further advantage of the Schottky photodiode is that metal junctions can be made with a wide variety of semiconductors, including those with wide band gap Eg, such as

Figure 14-16 In a Schottky photodiode, light is absorbed in the depletion region of an n-type semiconductor after passing through a semitransparent metallic film.

 

SiC, GaN, and AlGaN. These wide-band-gap detectors have found use as "solar blind" sensors, which respond only to wavelengths in the UV region. They are inherently insensitive to sunlight in the visible and infrared regions where hv < Eg, and have applications such as flame sensors.

Schottky photodiodes do have some disadvantages, however. They tend to be less efficient than PIN photodiodes at longer wavelengths, due to reflection and absorption of light in the metal layer. To reduce light reflection, an antireflection coating is often applied, but this complicates the manufacture of such devices. Schottky photodiodes are primarily used for detecting blue or UV wavelengths, or in high-speed applications, where some loss in efficiency can be tolerated.

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