N-Channel RF MOSFET Transistors
from ODG (Origin Data Global)
JFET N-CH 25V 100MA TO92 [See More]
- Polarity: N-Channel; N-Channel
- Package Type: TO-92; TO-226-3, TO-92-3 Long Body
- Transistor Technology / Material: JFET
from Win Source Electronics
Win Source Part Number: 1007438-NE5500234-T1-AZ. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1,000. Voltage - Rated: 20 V. Frequency: 1.9GHz. Current - Test: 400 mA. Transistor Type: N-Channel. Voltage - Test: 4.8 V. Power -... [See More]
- Polarity: N-Channel
- Operating Frequency: 1900
- Output Power: 1.78
- Package Type: SOT3; SOT89
from Rochester Electronics
Small Signal Field-Effect Transistor, N-Channel, Junction FET [See More]
- Polarity: N-Channel
- Package Type: TO-71
from ODG (Origin Data Global)
RF MOSFET N-CH JFET 5V 3CP [See More]
- Polarity: N-Channel; N-Channel
- Noise Figure: 1
- Transistor Technology / Material: JFET
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
from Win Source Electronics
Win Source Part Number: 1012648-MRF141G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tray. Standard Package: 10. Voltage - Rated: 65 V. Frequency: 175MHz. Current - Test: 500 mA. Gain: 14dB. Transistor Type: 2 N-Channel (Dual) Common Source. Voltage -... [See More]
- Polarity: N-Channel
- Power Gain: 14
- Output Power: 300
- Operating Frequency: 175
from Rochester Electronics
RF Small Signal Field-Effect Transistor, Very High Frequency Band, N-Channel, Junction FET, TO-92 [See More]
- Polarity: N-Channel
- Package Type: TO-92; TO-92
from ODG (Origin Data Global)
FET RF 15V 200MHZ CP4 [See More]
- Polarity: N-Channel; N-Channel Dual Gate
- Power Gain: 21
- Transistor Technology / Material: MOSFET
- Noise Figure: 2.2
from Win Source Electronics
Win Source Part Number: 1017915-ARF446G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 900 V. Frequency: 40.68MHz. Gain: 15dB. Transistor Type: N-Channel. Voltage - Test: 250 V. Power - Output: 140W. Package /... [See More]
- Polarity: N-Channel
- Power Gain: 15
- Output Power: 140
- Operating Frequency: 40.68
from Rochester Electronics
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT23
from ODG (Origin Data Global)
TRANS N-CH CMPAK-4 [See More]
- Polarity: N-Channel; N-Channel Dual Gate
- Power Gain: 21
- Transistor Technology / Material: MOSFET
- Noise Figure: 1.4
from Win Source Electronics
Win Source Part Number: 1021864-MRF8S18210WGHSR3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 250. Voltage - Rated: 65 V. Frequency: 1.93GHz. Current - Test: 1.3 A. Gain: 17.8dB. Transistor Type: N-Channel. Voltage... [See More]
- Polarity: N-Channel
- Power Gain: 17.8
- Output Power: 50
- Operating Frequency: 1930
from Rochester Electronics
Small Signal Field-Effect Transistor, 0.34A, 60V, 2-Element, N-Channel, TO-236AB [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TO-236AB
from ODG (Origin Data Global)
MOSFET RF N-CH 1000V 30A T1 [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 17
- Transistor Technology / Material: MOSFET
- Operating Frequency: 27.12
from Win Source Electronics
Win Source Part Number: 1024149-J300_D26Z. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 2,000. Voltage - Rated: 25 V. Transistor Type: N-Channel JFET. Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads. [See More]
- Polarity: N-Channel
- Package Type: TO-92; SOT3
from Rochester Electronics
Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT666
from ODG (Origin Data Global)
FET RF N-CH 500V 14A TO247 [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 15
- Transistor Technology / Material: MOSFET
- Operating Frequency: 40.68
from Win Source Electronics
Win Source Part Number: 1026849-BLF278C. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 125 V. Current - Test: 200 mA. Gain: 18dB. Transistor Type: 2 N-Channel (Dual) Common Source. Voltage - Test: 50 V. Power -... [See More]
- Polarity: N-Channel
- Power Gain: 18
- Output Power: 300
- Package Type: SOT3
from Rochester Electronics
2SK1133 - Small Signal Field-Effect Transistor, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TO-220; TO-220-3
from ODG (Origin Data Global)
RF N-CHANNEL MOSFET [See More]
- Polarity: N-Channel; N-Channel
- Noise Figure: 1.6
- Power Gain: 23
- Operating Frequency: 800
from Win Source Electronics
Win Source Part Number: 1028830-ARF475FL. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 500 V. Frequency: 128MHz. Current - Test: 15 mA. Gain: 16dB. Transistor Type: 2 N-Channel (Dual) Common Source. Voltage -... [See More]
- Polarity: N-Channel
- Power Gain: 16
- Output Power: 900
- Operating Frequency: 128
from Rochester Electronics
Small Signal Field-Effect Transistor, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: CPH3
from ODG (Origin Data Global)
RF MOSFET N-CH 5V SOT143-4 [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 23
- Transistor Technology / Material: MOSFET
- Noise Figure: 1.6
from Win Source Electronics
Win Source Part Number: 1031765-MRF8S21100HR5. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 50. Voltage - Rated: 65 V. Frequency: 2.17GHz. Current - Test: 700 mA. Gain: 18.3dB. Transistor Type: N-Channel. Voltage - Test: 28 V. Power... [See More]
- Polarity: N-Channel
- Power Gain: 18.3
- Output Power: 24
- Operating Frequency: 2170
from Rochester Electronics
Small Signal Field-Effect Transistor, 0.1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT323; SC-70 (SOT-323)
from ODG (Origin Data Global)
JFET N-CH 20V 25MA SOT23 [See More]
- Polarity: N-Channel; N-Channel
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Transistor Technology / Material: JFET
from Win Source Electronics
Win Source Part Number: 1032396-MRF136Y. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tray. Standard Package: 20. Voltage - Rated: 65 V. Frequency: 400MHz. Current - Test: 25 mA. Gain: 14dB. Transistor Type: N-Channel. Voltage - Test: 28 V. Noise Figure:... [See More]
- Polarity: N-Channel
- Power Gain: 14
- Output Power: 30
- Noise Figure: 1
from Rochester Electronics
Small Signal Field-Effect Transistor, N-Channel, Junction FET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SC-75
from ODG (Origin Data Global)
MOSFET NCH DUAL GATE 20V SOT143B [See More]
- Polarity: N-Channel; N-Channel Dual Gate
- Power Gain: 29
- Transistor Technology / Material: MOSFET
- Noise Figure: 0.7000
from Win Source Electronics
Win Source Part Number: 1032547-UF28150J. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tray. Standard Package: 10. Voltage - Rated: 65 V. Frequency: 100MHz ~ 500MHz. Current - Test: 400 mA. Gain: 8dB. Transistor Type: 2 N-Channel (Dual). Voltage - Test: 28... [See More]
- Polarity: N-Channel
- Power Gain: 8
- Output Power: 150
- Operating Frequency: 100 to 500
from Rochester Electronics
Small Signal Field-Effect Transistor, N-Channel, Junction FET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SC-89-3
from ODG (Origin Data Global)
MOSFET N-CH 12V 30MA SOT343R [See More]
- Polarity: N-Channel; N-Channel Dual Gate
- Noise Figure: 0.6000
- Transistor Technology / Material: MOSFET
- Operating Frequency: 200
from Win Source Electronics
Win Source Part Number: 1036413-2N5952. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 2,000. Voltage - Rated: 30 V. Frequency: 1kHz. Transistor Type: N-Channel JFET. Voltage - Test: 15 V. Noise Figure: 2dB. Package / Case: TO-226-3,... [See More]
- Polarity: N-Channel
- Operating Frequency: 1.00E-3
- Noise Figure: 2
- Package Type: TO-92; SOT3
from Rochester Electronics
Small Signal Field-Effect Transistor, 0.1A, 30V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT323; SC-70 (SOT-323) 3
from ODG (Origin Data Global)
BLF175 - HF/VHF POWER VDMOS TRAN [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 20
- Transistor Technology / Material: MOSFET
- Operating Frequency: 108
from Win Source Electronics
Win Source Part Number: 1049082-BF1109WR,115. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 3,000. Voltage - Rated: 11 V. Frequency: 800MHz. Gain: 20dB. Transistor Type: N-Channel Dual Gate. Voltage - Test: 9 V. Noise... [See More]
- Polarity: N-Channel
- Noise Figure: 1.5
- Power Gain: 20
- Operating Frequency: 800
from Rochester Electronics
Small Signal Field-Effect Transistor, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TO-252 (DPAK); TO-252
from ODG (Origin Data Global)
BLF278C - DUAL PUSH-PULL N-CHANN [See More]
- Polarity: N-Channel; 2 N-Channel (Dual) Common Source
- Power Gain: 18
- Transistor Technology / Material: MOSFET
- Package Type: SOT26; SOT-262A1
from Win Source Electronics
Win Source Part Number: 1049084-BF1212,215. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel. Standard Package: 3,000. Voltage - Rated: 6 V. Frequency: 400MHz. Current - Test: 12 mA. Gain: 30dB. Transistor Type: N-Channel Dual Gate. Voltage -... [See More]
- Polarity: N-Channel
- Noise Figure: 0.9000
- Power Gain: 30
- Operating Frequency: 400
from Rochester Electronics
Small Signal Field-Effect Transistor, N-Channel, Junction FET [See More]
- Polarity: N-Channel
- Packing Method: Bulk; Bulk
- Package Type: SIP3
from ODG (Origin Data Global)
RF MOSFET N-CHANNEL DE275 [See More]
- Polarity: N-Channel; N-Channel
- Package Type: 6-SMD, Flat Lead Exposed Pad
- Transistor Technology / Material: MOSFET
from Win Source Electronics
Win Source Part Number: 1049094-BF1108/L,215. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 3,000. Voltage - Rated: 3 V. Transistor Type: N-Channel. Package / Case: TO-253-4, TO-253AA. Supplier Device Package:... [See More]
- Polarity: N-Channel
- Package Type: SOT3
from Rochester Electronics
Small Signal Field-Effect Transistor, N-Channel, MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SC-59-3
from ODG (Origin Data Global)
RF MOSFET N-CHANNEL DE375 [See More]
- Polarity: N-Channel; N-Channel
- Package Type: 6-SMD, Flat Lead Exposed Pad
- Transistor Technology / Material: MOSFET
from Win Source Electronics
Win Source Part Number: 1049114-BF2040E6814HTSA1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel. Standard Package: 3,000. Voltage - Rated: 8 V. Frequency: 800MHz. Current - Test: 15 mA. Gain: 23dB. Transistor Type: N-Channel. Voltage - Test:... [See More]
- Polarity: N-Channel
- Noise Figure: 1.6
- Power Gain: 23
- Operating Frequency: 800
from Rochester Electronics
RF Small Signal Field-Effect Transistor, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: MPAK4
from ODG (Origin Data Global)
RF MOSFET N-CH JFET 15V SOT23-3 [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 18
- Transistor Technology / Material: JFET
- Noise Figure: 2
from Win Source Electronics
Win Source Part Number: 1079378-MMBFJ212. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 3,000. Voltage - Rated: 25 V. Transistor Type: N-Channel JFET. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device... [See More]
- Polarity: N-Channel
- Package Type: SOT3; SOT23
from Rochester Electronics
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT-343
from ODG (Origin Data Global)
JFET N-CH 30V 15MA SOT23 [See More]
- Polarity: N-Channel; N-Channel
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Transistor Technology / Material: JFET
from Win Source Electronics
Win Source Part Number: 1194467-VRF2944. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 170 V. Frequency: 30MHz. Current - Test: 250 mA. Gain: 22dB. Transistor Type: N-Channel. Voltage - Test: 50 V. Power - Output:... [See More]
- Polarity: N-Channel
- Power Gain: 22
- Output Power: 400
- Operating Frequency: 30
from Rochester Electronics
Small Signal Field-Effect Transistor, 0.1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT-623F
from ODG (Origin Data Global)
FET RF 65V 400MHZ 319B-02 [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 14
- Transistor Technology / Material: MOSFET
- Noise Figure: 1
from Win Source Electronics
Win Source Part Number: 1208971-ARF447G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 900 V. Frequency: 40.68MHz. Gain: 15dB. Transistor Type: N-Channel. Voltage - Test: 250 V. Power - Output: 140W. Package /... [See More]
- Polarity: N-Channel
- Power Gain: 15
- Output Power: 140
- Operating Frequency: 40.68
from Rochester Electronics
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]
- Polarity: N-Channel
- Package Type: CP4
from ODG (Origin Data Global)
FET RF 65V 400MHZ 211-07 [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 7.7
- Transistor Technology / Material: MOSFET
- Noise Figure: 1.5
from Win Source Electronics
Win Source Part Number: 1230951-ARF477FL. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 500 V. Frequency: 65MHz. Gain: 16dB. Transistor Type: 2 N-Channel (Dual) Common Source. Voltage - Test: 150 V. Power -... [See More]
- Polarity: N-Channel
- Power Gain: 16
- Output Power: 400
- Operating Frequency: 65
from Rochester Electronics
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: DFP4
from ODG (Origin Data Global)
FET RF 2CH 65V 175MHZ 375-04 [See More]
- Polarity: N-Channel; 2 N-Channel (Dual) Common Source
- Power Gain: 14
- Transistor Technology / Material: MOSFET
- Operating Frequency: 175
from Win Source Electronics
Manufacturer: IXYS-RF. Win Source Part Number: 1324108-DE475-102N21A. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Packaging: Tube. Standard Package: 20. Voltage - Rated: 1000 V. Transistor Type: N-Channel. Power - Output: 1800W. Supplier Device Package: DE475. [See More]
- Polarity: N-Channel
- Package Type: SOT3; 6-SMD, Flat Lead Exposed Pad
- Output Power: 1800
- Packing Method: Tube; Tube
from Rochester Electronics
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]
- Polarity: N-Channel
- Packing Method: Tray
- Package Type: SOT502B
from ODG (Origin Data Global)
FET RF 125V 150MHZ 211-11 [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 8
- Transistor Technology / Material: MOSFET
- Operating Frequency: 30 to 150
from Win Source Electronics
Win Source Part Number: 969738-BF1102,115. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel. Standard Package: 3,000. Voltage - Rated: 7 V. Frequency: 800MHz. Current - Test: 15 mA. Transistor Type: N-Channel Dual Gate. Voltage - Test: 5 V. [See More]
- Polarity: N-Channel
- Operating Frequency: 800
- Noise Figure: 2
- Package Type: SOT3
from Rochester Electronics
Small Signal Field-Effect Transistor, 7.5A, 20V, N-Channel, MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TSOP6
from ODG (Origin Data Global)
FET RF N-CH 150W 50V 175MHZ [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 13
- Transistor Technology / Material: MOSFET
- Operating Frequency: 175
from Win Source Electronics
Win Source Part Number: 971592-BF999E6433HTMA1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 10,000. Voltage - Rated: 20 V. Frequency: 45MHz. Current - Test: 10 mA. Gain: 27dB. Transistor Type: N-Channel. Voltage -... [See More]
- Polarity: N-Channel
- Noise Figure: 2.1
- Power Gain: 27
- Operating Frequency: 45
from Rochester Electronics
SIPMOS Small-Signal N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT223; SOT-223-4
from ODG (Origin Data Global)
FET RF 2CH 125V 175MHZ 375-04 [See More]
- Polarity: N-Channel; 2 N-Channel (Dual) Common Source
- Power Gain: 16
- Transistor Technology / Material: MOSFET
- Operating Frequency: 175
from Win Source Electronics
Win Source Part Number: 1380722-2N4340. Category: Discrete Semiconductor Products >Transistors >FETs, MOSFETs >RF FETs, MOSFETs. Package: Bulk. Voltage - Rated: 50 V. Technology: JFET. Frequency: 1kHz. Configuration: N-Channel. Voltage - Test: 15 V. Noise Figure: 1dB. Mounting Type: Through... [See More]
- Polarity: N-Channel
- Operating Frequency: 1.00E-3
- Noise Figure: 1
- Package Type: SOT3
from Rochester Electronics
BSS126 - Small Signal N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT23; SOT-23-3
from ODG (Origin Data Global)
FET RF 125V 80MHZ 368-03 1=1PC [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 21
- Transistor Technology / Material: MOSFET
- Operating Frequency: 80
from Win Source Electronics
Manufacturer: IXYS. Win Source Part Number: 868318-475-501N44A-00. Series: DE. Features: RF Mosfet N-Channel - - 1800W DE475. Package: Tube. Package: 6-SMD, Flat Lead Exposed Pad. Part Status: Obsolete. Categories: Discrete Semiconductor Products. Case / Package: DE475. ECCN: EAR99. Popularity:... [See More]
- Polarity: N-Channel
- Package Type: SOT3; DE475
from Rochester Electronics
BSS214 - Small Signal Field-Effect Transistor, 1.5A, 20V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT323; SOT-323-3
from ODG (Origin Data Global)
FET RF 65V 500MHZ 305A-01 [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 18
- Transistor Technology / Material: MOSFET
- Operating Frequency: 500
from Win Source Electronics
Manufacturer: Microsemi Corporation. Win Source Part Number: 051497-ARF461AG. Packaging: Bulk. Voltage Rating: 1000V. Current Rating: 25 μA. Frequency: 65MHz. Gain: 15dB. Transistor Polarity: N-Channel. Voltage - Test: 50V. Power - Output: 150W. Categories: Discrete Semiconductor Products. [See More]
- Polarity: N-Channel; N-Channel
- Power Gain: 15
- Output Power: 150
- Operating Frequency: 65
from Rochester Electronics
Small Signal Field-Effect Transistor, 2.1A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: PicoStar (YJC)
from New Jersey Semi-Conductor Products, Inc.
Trans RF MOSFET N-CH 20V 0.03A 3-Pin 2-4E1D [See More]
- Polarity: N-Channel
- V(BR)DSS: 20
- IDSS: 30
- PD: 200
from Utmel Electronic Limited
RF MOSFET LDMOS DUAL 50V SOT539B [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 104
from Utmel Electronic Limited
RF MOSFET Transistors HV8 2.6GHZ 80W NI780S-4 [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 65
from Utmel Electronic Limited
RF MOSFET Transistors HV8 300W 50V NI1230S [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 65
from Utmel Electronic Limited
RF MOSFET Transistors VHV6 500W 50V NI780H [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 110
from Utmel Electronic Limited
Trans RF MOSFET N-CH 110V 3-Pin TO-270 T/R [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 110
from Utmel Electronic Limited
Trans RF MOSFET N-CH 110V 3-Pin TO-272 T/R [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 110
from Utmel Electronic Limited
Trans RF MOSFET N-CH 110V 42A 5-Pin SOT-539A [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 110
from Utmel Electronic Limited
Trans RF MOSFET N-CH 40V 2A 3-Pin PowerSO-10RF (Formed lead) Tube [See More]
- Polarity: N-Channel; N-CHANNEL
- V(BR)DSS: 40
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Output Power: 6
from Utmel Electronic Limited
Trans RF MOSFET N-CH 65V 17-Pin TO-272 W T/R [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 65
from Utmel Electronic Limited
Trans RF MOSFET N-CH 65V 9-Pin Case 375J-02 T/R [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 65
from Utmel Electronic Limited
Trans RF MOSFET N-CH 68V 3-Pin NI-880S T/R [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 68
from Utmel Electronic Limited
Trans RF MOSFET N-CH 68V 5-Pin TO-270 W T/R [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 68
from Utmel Electronic Limited
Trans RF MOSFET N-CH 70V 3-Pin NI-780S T/R [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 70
from Utmel Electronic Limited
Trans RF MOSFET N-CH 70V 5-Pin NI-1230 T/R [See More]
- Polarity: N-Channel; N-CHANNEL
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 70
from Utmel Electronic Limited
Transistors RF MOSFET AF1 2GHz 60W OM780-4 [See More]
- Polarity: N-Channel; N-CHANNEL
- Power Gain: 18.9
- Output Power: 6.3
- Packing Method: Tape Reel; Tape & Reel (TR)