Tape Reel RF MOSFET Transistors

75 Results
RF Mosfet and Active Bias Controllers -- BCR400W
from Infineon Technologies AG

Active Bias Controller for various applications like cellular and cordless phones, DECT, WLAN, PHS and RF modems. The controllers are stabilizing the bias current for NPN transistors and FET ’s. Summary of Features. Stable bias current supply, even at low battery voltage. Low voltage drop. [See More]

  • Packing Method: Tape Reel; TAPE & REEL
  • Package Type: SOT343
15GN01CA-TB-E [15GN01CA-TB-E from onsemi]
from Rochester Electronics

RF Small Signal Bipolar Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SC-60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF -- 1323898-MRF8HP21080HSR3 [MRF8HP21080HSR3 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP USA Inc. Win Source Part Number: 1323898-MRF8HP21080HSR3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Packaging: Reel - TR. Standard Package: 250. Voltage - Rated: 65 V. Frequency: 2.17GHz. Current - Test: 150 mA. Gain: 14.4dB. Transistor Type:... [See More]

  • Packing Method: Tape Reel; Reel - TR
  • Power Gain: 14.4
  • Output Power: 16
  • Operating Frequency: 2170
2N4403RL [2N4403RL from onsemi]
from Rochester Electronics

Small Signal Bipolar Transistor, 0.6A, 40V, PNP, TO-92 [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TO-92; TO-92
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT18H356-24SR6 -- 768321-AFT18H356-24SR6 [AFT18H356-24SR6 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768321-AFT18H356-24SR6. Packaging: Reel package. Package: NI-1230-4LS2L. Frequency: 1.88GHz. Current - Test: 1.1A. Gain: 15dB. Voltage - Test: 28V. Power - Output: 63W. Family Name: AFT18H356-24SR6. Categories: Discrete Semiconductor Products. Manufacturer... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 15
  • Output Power: 63
  • Operating Frequency: 1880
2N7002/HAMR [2N7002/HAMR from Nexperia B.V.]
from Rochester Electronics

Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT23
  • Polarity: N-Channel
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT18H357-24SR6 -- 768322-AFT18H357-24SR6 [AFT18H357-24SR6 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768322-AFT18H357-24SR6. Packaging: Reel package. Package: NI-1230-4LS2L. Frequency: 1.81GHz. Current - Test: 800mA. Gain: 17.3dB. Transistor Type: LDMOS (Dual). Voltage - Test: 28V. Power - Output: 63W. Family Name: AFT18H357-24S. Categories: Discrete... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 17.3
  • Output Power: 63
  • Operating Frequency: 1810
2N7002/S711,215 [2N7002/S711,215 from NXP Semiconductors]
from Rochester Electronics

Small Signal Field-Effect Transistor, 0.34A, 60V, 2-Element, N-Channel, TO-236AB [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TO-236AB
  • Polarity: N-Channel
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT18P350-4S2LR6 -- 768323-AFT18P350-4S2LR6 [AFT18P350-4S2LR6 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768323-AFT18P350-4S2LR6. Packaging: Reel package. Package: NI-1230-4LS2L. Frequency: 1.81GHz. Current - Test: 1A. Gain: 16.1dB. Transistor Type: LDMOS (Dual). Voltage - Test: 28V. Power - Output: 63W. Family Name: AFT18P350-4S2LR6. Categories: Discrete... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 16.1
  • Output Power: 63
  • Operating Frequency: 1810
2N7002BKV,115 [2N7002BKV,115 from NXP Semiconductors]
from Rochester Electronics

Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT666
  • Polarity: N-Channel
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT18S290-13SR3 -- 768324-AFT18S290-13SR3 [AFT18S290-13SR3 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768324-AFT18S290-13SR3. Packaging: Reel package. Package: NI-880XS-6. Frequency: 1.96GHz. Current - Test: 2A. Gain: 18.2dB. Transistor Type: LDMOS. Voltage - Test: 28V. Power - Output: 63W. Family Name: AFT18S290-13SR3. Categories: Discrete Semiconductor... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 18.2
  • Output Power: 63
  • Operating Frequency: 1960
2N7002DWH6327XTSA1 [2N7002DWH6327XTSA1 from Infineon Technologies AG]
from Rochester Electronics

Small Signal MosFETs [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: PG-SOT363-6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT20P060-4GNR3 -- 768325-AFT20P060-4GNR3 [AFT20P060-4GNR3 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768325-AFT20P060-4GNR3. Packaging: Reel package. Package: OM-780G-4L. Frequency: 2.17GHz. Current - Test: 450mA. Gain: 18.9dB. Transistor Type: LDMOS (Dual). Voltage - Test: 28V. Power - Output: 6.3W. Family Name: AFT20P060-4GN. Categories: Discrete... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 18.9
  • Output Power: 6.3
  • Operating Frequency: 2170
2PA1576Q,115 [2PA1576Q,115 from NXP Semiconductors]
from Rochester Electronics

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT323
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT20P060-4NR3 -- 796030-AFT20P060-4NR3 [AFT20P060-4NR3 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 796030-AFT20P060-4NR3. Packaging: Reel package. Package: OM780-4. Frequency: 2.17GHz. Current - Test: 450mA. Gain: 18.9dB. Transistor Type: LDMOS (Dual). Voltage - Test: 28V. Power - Output: 6.3W. Family Name: AFT20P060-4N. Categories: Discrete... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 18.9
  • Output Power: 6.3
  • Operating Frequency: 2170
2PA1774Q,115 [2PA1774Q,115 from NXP Semiconductors]
from Rochester Electronics

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SC-75
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT20P140-4WNR3 -- 768326-AFT20P140-4WNR3 [AFT20P140-4WNR3 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768326-AFT20P140-4WNR3. Packaging: Reel package. Package: OM780-4. Frequency: 1.88GHz ~ 1.91GHz. Current - Test: 500mA. Gain: 17.8dB. Transistor Type: LDMOS (Dual). Voltage - Test: 28V. Power - Output: 24W. Family Name: AFT20P140-4WN. Categories: Discrete... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 17.8
  • Output Power: 24
  • Operating Frequency: 1880 to 1910
2PA1774RM,315 [2PA1774RM,315 from NXP Semiconductors]
from Rochester Electronics

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT883
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT20S015GNR1 -- 768327-AFT20S015GNR1 [AFT20S015GNR1 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768327-AFT20S015GNR1. Packaging: Reel package. Package: TO-270-2 Gull Wing. Frequency: 2.17GHz. Current - Test: 132mA. Gain: 17.6dB. Transistor Type: LDMOS. Voltage - Test: 28V. Power - Output: 1.5W. Family Name: AFT20S015GNR1. Categories: Discrete... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 17.6
  • Output Power: 1.5
  • Operating Frequency: 2170
2PC4081R/ZL,115 [2PC4081R/ZL,115 from NXP Semiconductors]
from Rochester Electronics

Small Signal Bipolar Transistor, 0.15A, 50V, NPN, SC-70 [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT323; SC-70 (SOT-323)
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT20S015NR1 -- 768328-AFT20S015NR1 [AFT20S015NR1 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768328-AFT20S015NR1. Packaging: Reel package. Package: TO-270AA. Frequency: 2.17GHz. Current - Test: 132mA. Gain: 17.6dB. Transistor Type: LDMOS. Voltage - Test: 28V. Power - Output: 1.5W. Family Name: AFT20S015NR1. Categories: Discrete Semiconductor... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 17.6
  • Output Power: 1.5
  • Operating Frequency: 2170
2SA1162S-GR,LF(D [2SA1162S-GR,LF(D from Toshiba Semiconductor & Storage Products]
from Rochester Electronics

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT-346 (S-Mini)
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT21S230SR3 -- 768329-AFT21S230SR3 [AFT21S230SR3 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768329-AFT21S230SR3. Packaging: Reel package. Package: NI-780S. Frequency: 2.11GHz. Current - Test: 1.5A. Gain: 16.7dB. Transistor Type: LDMOS. Voltage - Test: 28V. Power - Output: 50W. Family Name: AFT21S230S. Categories: Discrete Semiconductor Products. [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 16.7
  • Output Power: 50
  • Operating Frequency: 2110
2SA1162YT1 [2SA1162YT1 from onsemi]
from Rochester Electronics

Small Signal Bipolar Transistor, 0.15A, 50V, PNP [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SC-59-3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT21S232SR3 -- 768331-AFT21S232SR3 [AFT21S232SR3 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768331-AFT21S232SR3. Packaging: Reel package. Package: NI-780S. Frequency: 2.11GHz. Current - Test: 1.5A. Gain: 16.7dB. Transistor Type: LDMOS. Voltage - Test: 28V. Power - Output: 50W. Family Name: AFT21S230S. Categories: Discrete Semiconductor Products. [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 16.7
  • Output Power: 50
  • Operating Frequency: 2110
2SA1417S-TD-E [2SA1417S-TD-E from onsemi]
from Rochester Electronics

Small Signal Bipolar Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT89; SOT-89
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT23H200-4S2LR6 -- 768332-AFT23H200-4S2LR6 [AFT23H200-4S2LR6 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768332-AFT23H200-4S2LR6. Packaging: Reel package. Package: NI-1230-4LS2L. Frequency: 2.3GHz. Current - Test: 500mA. Gain: 15.3dB. Transistor Type: LDMOS (Dual). Voltage - Test: 28V. Power - Output: 45W. Family Name: AFT23H200-4S2LR6. Categories: Discrete... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 15.3
  • Output Power: 45
  • Operating Frequency: 2300
2SA1625-T-AZ [2SA1625-T-AZ from Renesas Electronics Corporation]
from Rochester Electronics

Small Signal Bipolar Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TO-220; TO-220FM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT23S160W02SR3 -- 768334-AFT23S160W02SR3 [AFT23S160W02SR3 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768334-AFT23S160W02SR3. Packaging: Reel package. Package: NI-780S. Frequency: 2.4GHz. Current - Test: 1.1A. Gain: 17.9dB. Transistor Type: LDMOS. Voltage - Test: 28V. Power - Output: 45W. Family Name: AFT23S160W02S. Categories: Discrete Semiconductor... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 17.9
  • Output Power: 45
  • Operating Frequency: 2400
2SA2126-S-TL-E [2SA2126-S-TL-E from onsemi]
from Rochester Electronics

Small Signal Bipolar Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: D2PAK
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT26H250-24SR6 -- 768335-AFT26H250-24SR6 [AFT26H250-24SR6 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768335-AFT26H250-24SR6. Packaging: Reel package. Package: NI-1230-4LS2L. Frequency: 2.5GHz. Current - Test: 700mA. Gain: 14.1dB. Transistor Type: LDMOS. Voltage - Test: 28V. Power - Output: 50W. Family Name: AFT26H250-24S. Categories: Discrete Semiconductor... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 14.1
  • Output Power: 50
  • Operating Frequency: 2500
2SC1621(0)-T1B-A [2SC1621(0)-T1B-A from Renesas Electronics Corporation]
from Rochester Electronics

Small Signal Bipolar Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TO-220; TO-220-3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFT26HW050SR3 -- 768336-AFT26HW050SR3 [AFT26HW050SR3 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768336-AFT26HW050SR3. Packaging: Reel package. Package: NI-780-4S4. Frequency: 2.69GHz. Current - Test: 100mA. Gain: 14.2dB. Transistor Type: LDMOS (Dual). Voltage - Test: 28V. Power - Output: 9W. Family Name: AFT26HW050SR3. Categories: Discrete... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 14.2
  • Output Power: 9
  • Operating Frequency: 2690
2SC4116SU-GR,LF(D [2SC4116SU-GR,LF(D from Toshiba Semiconductor & Storage Products]
from Rochester Electronics

2SC4116 - Transistor for low frequency small-signal amplification [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT323; SOT-323 (USM)
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AFV09P350-04NR3 -- 768337-AFV09P350-04NR3 [AFV09P350-04NR3 from NXP Semiconductors]
from Win Source Electronics

Manufacturer: NXP. Win Source Part Number: 768337-AFV09P350-04NR3. Packaging: Reel package. Package: OM780-4. Frequency: 920MHz. Current - Test: 860mA. Gain: 19.5dB. Transistor Type: LDMOS (Dual). Voltage - Test: 48V. Power - Output: 100W. Family Name: AFV09P350-04NR3. Categories: Discrete... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 19.5
  • Output Power: 100
  • Operating Frequency: 920
2SC5006-T1-A [2SC5006-T1-A from Renesas Electronics Corporation]
from Rochester Electronics

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT-523-3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLC8G21LS-160AVY -- 770054-BLC8G21LS-160AVY [BLC8G21LS-160AVY from Ampleon]
from Win Source Electronics

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770054-BLC8G21LS-160AVY. Packaging: Reel package. Package: SOT1275-1. Frequency: 1.88GHz ~ 2.03GHz. Current - Test: 200mA. Gain: 15dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 28V. Power - Output: 22.5W. Family Name:... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 15
  • Output Power: 22.5
  • Operating Frequency: 1880 to 2030
2SC5080ZD-TL [2SC5080ZD-TL from Renesas Electronics Corporation]
from Rochester Electronics

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: MPAK4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLC8G22LS-450AVY -- 770055-BLC8G22LS-450AVY [BLC8G22LS-450AVY from Ampleon]
from Win Source Electronics

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770055-BLC8G22LS-450AVY. Packaging: Reel package. Package: SOT-1258-3. Frequency: 2.11GHz ~ 2.17GHz. Current - Test: 1A. Gain: 14dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 28V. Power - Output: 85W. Family Name:... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 14
  • Output Power: 85
  • Operating Frequency: 2110 to 2170
2SD1801T-E [2SD1801T-E from onsemi]
from Rochester Electronics

Small Signal Bipolar Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: IPAK-3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLC8G27LS-140AVY -- 770056-BLC8G27LS-140AVY [BLC8G27LS-140AVY from Ampleon]
from Win Source Electronics

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770056-BLC8G27LS-140AVY. Packaging: Reel package. Package: SOT1275-1. Frequency: 2.5GHz ~ 2.69GHz. Current - Test: 320mA. Gain: 14.5dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 28V. Power - Output: 28W. Family Name:... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 14.5
  • Output Power: 28
  • Operating Frequency: 2500 to 2690
2SD789D-E [2SD789D-E from Renesas Electronics Corporation]
from Rochester Electronics

Small Signal Bipolar Transistor, 1A, 50V, NPN [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TO-92; TO-92MOD
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLC8G27LS-210PVY -- 770057-BLC8G27LS-210PVY [BLC8G27LS-210PVY from Ampleon]
from Win Source Electronics

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770057-BLC8G27LS-210PVY. Packaging: Reel package. Package: SOT-1251-3. Frequency: 2.6GHz ~ 2.7GHz. Current - Test: 1.73A. Gain: 17dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 28V. Power - Output: 65W. Family Name:... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 17
  • Output Power: 65
  • Operating Frequency: 2600 to 2700
2SK2109-T1-AZ [2SK2109-T1-AZ from Renesas Electronics Corporation]
from Rochester Electronics

Small Signal Field-Effect Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: POMM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLC8G27LS-240AVJ -- 770058-BLC8G27LS-240AVJ [BLC8G27LS-240AVJ from Ampleon]
from Win Source Electronics

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770058-BLC8G27LS-240AVJ. Packaging: Reel package. Package: SOT-1252-1. Frequency: 2.5GHz ~ 2.69GHz. Current - Test: 500mA. Gain: 14dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 28V. Power - Output: 56W. Family Name:... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 14
  • Output Power: 56
  • Operating Frequency: 2500 to 2690
2SK3230-T1-A [2SK3230-T1-A from Renesas Electronics Corporation]
from Rochester Electronics

Small Signal Field-Effect Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SC-89-3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLC9G20LS-120VY -- 770059-BLC9G20LS-120VY [BLC9G20LS-120VY from Ampleon]
from Win Source Electronics

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770059-BLC9G20LS-120VY. Packaging: Reel package. Package: SOT1275-3. Frequency: 1.81GHz ~ 1.88GHz. Current - Test: 700mA. Gain: 19.2dB. Transistor Type: LDMOS. Voltage - Test: 28V. Power - Output: 120W. Family Name: BLC9G20LS-120V. Categories:... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 19.2
  • Output Power: 120
  • Operating Frequency: 1810 to 1880
2SK715U-AC [2SK715U-AC from onsemi]
from Rochester Electronics

Small Signal Field-Effect Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SIP3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLC9G20LS-361AVTY -- 770061-BLC9G20LS-361AVTY [BLC9G20LS-361AVTY from Ampleon]
from Win Source Electronics

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770061-BLC9G20LS-361AVTY. Packaging: Reel package. Package: SOT-1258-3. Frequency: 1.81GHz ~ 1.88GHz. Current - Test: 300mA. Gain: 15.7dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 28V. Noise Figure: 0.6dB. Power - Output:... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 15.7
  • Output Power: 360
  • Noise Figure: 0.6000
3SK298ZP-TL-E [3SK298ZP-TL-E from Renesas Electronics Corporation]
from Rochester Electronics

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT-343
  • Polarity: N-Channel
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLF188XRGJ -- 770084-BLF188XRGJ [BLF188XRGJ from Ampleon]
from Win Source Electronics

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770084-BLF188XRGJ. Packaging: Reel package. Package: SOT-1248C. Frequency: 108MHz. Current - Test: 40mA. Gain: 24.4dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 50V. Power - Output: 1400W. Family Name: BLF188XRG. Categories:... [See More]

  • Packing Method: Tape Reel; Reel package
  • Power Gain: 24.4
  • Output Power: 1400
  • Operating Frequency: 108
RF MOSFET -- MRF21010LR1
from New Jersey Semi-Conductor Products, Inc.

Trans RF MOSFET N-CH 65V 3-Pin NI-360 T/R [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 65
  • Polarity: N-Channel
  • PD: 43750
DUAL N CH RF MOSFET, 12V, 30MA, 4-SOT-143R - More Details -- 568-BF998R,215 [BF998R,215 from NXP Semiconductors]
from Utmel Electronic Limited

DUAL N CH RF MOSFET, 12V, 30MA, 4-SOT-143R - More Details [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Operating Mode: Depletion; DUAL GATE, DEPLETION MODE
  • Transistor Technology / Material: SILICON
  • V(BR)DSS: 12
RF MOSFET LDMOS DUAL 50V SOT539B -- 38-BLF888BS,112 [BLF888BS,112 from Ampleon]
from Utmel Electronic Limited

RF MOSFET LDMOS DUAL 50V SOT539B [See More]

  • Packing Method: Tape Reel; Tray
  • Transistor Technology / Material: SILICON
  • Polarity: N-Channel; N-CHANNEL
  • Operating Mode: Enhancement; ENHANCEMENT MODE
RF MOSFET LDMOS SOT1462-1 -- 38-BLM9D2327-25BZ [BLM9D2327-25BZ from Ampleon]
from Utmel Electronic Limited

RF MOSFET LDMOS SOT1462-1 [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Output Power: 25
RF MOSFET Transistors BL RF -- 568-MRF8VP13350NR3 [MRF8VP13350NR3 from NXP Semiconductors]
from Utmel Electronic Limited

RF MOSFET Transistors BL RF [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Power Gain: 19.2
  • Output Power: 350
RF MOSFET Transistors HV8 2.6GHZ 80W NI780S-4 -- 568-MRF8P26080HSR3 [MRF8P26080HSR3 from NXP Semiconductors]
from Utmel Electronic Limited

RF MOSFET Transistors HV8 2.6GHZ 80W NI780S-4 [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Transistor Technology / Material: SILICON
  • Polarity: N-Channel; N-CHANNEL
  • Operating Mode: Enhancement; ENHANCEMENT MODE
RF MOSFET Transistors HV8 2GHZ 140W NI780S -- 568-MRF8S21140HSR3 [MRF8S21140HSR3 from NXP Semiconductors]
from Utmel Electronic Limited

RF MOSFET Transistors HV8 2GHZ 140W NI780S [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Power Gain: 17.9
  • Output Power: 34
RF MOSFET Transistors HV8 300W 50V NI1230S -- 568-MRF8P29300HSR6 [MRF8P29300HSR6 from NXP Semiconductors]
from Utmel Electronic Limited

RF MOSFET Transistors HV8 300W 50V NI1230S [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Transistor Technology / Material: SILICON
  • Polarity: N-Channel; N-CHANNEL
  • Operating Mode: Enhancement; ENHANCEMENT MODE
RF MOSFET Transistors HV8 900MHZ 60W OM780-2 -- 568-MRF8S9232NR3 [MRF8S9232NR3 from NXP Semiconductors]
from Utmel Electronic Limited

RF MOSFET Transistors HV8 900MHZ 60W OM780-2 [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Operating Mode: Enhancement; ENHANCEMENT MODE
  • Transistor Technology / Material: SILICON
  • V(BR)DSS: 70
RF MOSFET Transistors N-Ch Radio Freq 1A 3W 7V VDSS -- 4669-2SK3756(TE12L,F) [2SK3756(TE12L,F) from Toshiba Corporation]
from Utmel Electronic Limited

RF MOSFET Transistors N-Ch Radio Freq 1A 3W 7V VDSS [See More]

  • Packing Method: Tape Reel; Cut Tape (CT)
  • Output Power: 1.58
  • Operating Mode: Enhancement; ENHANCEMENT MODE
  • Power Gain: 12
RF MOSFET Transistors TAPE-7 MOS-RFSS -- 568-BF1205C,115 [BF1205C,115 from NXP Semiconductors]
from Utmel Electronic Limited

RF MOSFET Transistors TAPE-7 MOS-RFSS [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Operating Mode: Enhancement; ENHANCEMENT MODE
  • Transistor Technology / Material: SILICON
  • V(BR)DSS: 6
RF MOSFET Transistors VHV6 500W 50V NI780H -- 568-MRF6V12500HR5 [MRF6V12500HR5 from NXP Semiconductors]
from Utmel Electronic Limited

RF MOSFET Transistors VHV6 500W 50V NI780H [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Transistor Technology / Material: SILICON
  • Polarity: N-Channel; N-CHANNEL
  • Operating Mode: Enhancement; ENHANCEMENT MODE
Trans RF MOSFET 65V 15-Pin TO-270 W GULL T/R -- 568-MW7IC2750GNR1 [MW7IC2750GNR1 from NXP Semiconductors]
from Utmel Electronic Limited

Trans RF MOSFET 65V 15-Pin TO-270 W GULL T/R [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Power Gain: 26
Trans RF MOSFET 65V 15-Pin TO-272 W T/R -- 568-MW7IC2750NBR1 [MW7IC2750NBR1 from NXP Semiconductors]
from Utmel Electronic Limited

Trans RF MOSFET 65V 15-Pin TO-272 W T/R [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Power Gain: 26
Trans RF MOSFET N-CH 110V 3-Pin TO-270 T/R -- 568-MRF6V2010NR1 [MRF6V2010NR1 from NXP Semiconductors]
from Utmel Electronic Limited

Trans RF MOSFET N-CH 110V 3-Pin TO-270 T/R [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Transistor Technology / Material: SILICON
  • Polarity: N-Channel; N-CHANNEL
  • Operating Mode: Enhancement; ENHANCEMENT MODE
Trans RF MOSFET N-CH 110V 3-Pin TO-272 T/R -- 568-MRF6V2010NBR1 [MRF6V2010NBR1 from NXP Semiconductors]
from Utmel Electronic Limited

Trans RF MOSFET N-CH 110V 3-Pin TO-272 T/R [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Transistor Technology / Material: SILICON
  • Polarity: N-Channel; N-CHANNEL
  • Operating Mode: Enhancement; ENHANCEMENT MODE
Trans RF MOSFET N-CH 65V 17-Pin TO-272 W T/R -- 568-MW7IC2425NBR1 [MW7IC2425NBR1 from NXP Semiconductors]
from Utmel Electronic Limited

Trans RF MOSFET N-CH 65V 17-Pin TO-272 W T/R [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Transistor Technology / Material: SILICON
  • Polarity: N-Channel; N-CHANNEL
  • Operating Mode: Enhancement; ENHANCEMENT MODE
Trans RF MOSFET N-CH 65V 3-Pin NI-880 T/R -- 568-MRF7S18170HR3 [MRF7S18170HR3 from NXP Semiconductors]
from Utmel Electronic Limited

Trans RF MOSFET N-CH 65V 3-Pin NI-880 T/R [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Power Gain: 17.5
  • Output Power: 50
Trans RF MOSFET N-CH 65V 9-Pin Case 375J-02 T/R -- 568-MRF8S19260HSR6 [MRF8S19260HSR6 from NXP Semiconductors]
from Utmel Electronic Limited

Trans RF MOSFET N-CH 65V 9-Pin Case 375J-02 T/R [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Transistor Technology / Material: SILICON
  • Polarity: N-Channel; N-CHANNEL
  • Operating Mode: Enhancement; ENHANCEMENT MODE
Trans RF MOSFET N-CH 68V 3-Pin NI-880S T/R -- 568-MRF6S19140HSR3 [MRF6S19140HSR3 from NXP Semiconductors]
from Utmel Electronic Limited

Trans RF MOSFET N-CH 68V 3-Pin NI-880S T/R [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Transistor Technology / Material: SILICON
  • Polarity: N-Channel; N-CHANNEL
  • Operating Mode: Enhancement; ENHANCEMENT MODE
Trans RF MOSFET N-CH 68V 5-Pin TO-270 W T/R -- 568-MRF6S18060NR1 [MRF6S18060NR1 from NXP Semiconductors]
from Utmel Electronic Limited

Trans RF MOSFET N-CH 68V 5-Pin TO-270 W T/R [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Transistor Technology / Material: SILICON
  • Polarity: N-Channel; N-CHANNEL
  • Operating Mode: Enhancement; ENHANCEMENT MODE
Trans RF MOSFET N-CH 70V 5-Pin NI-1230 T/R -- 568-MRF8P9300HR6 [MRF8P9300HR6 from NXP Semiconductors]
from Utmel Electronic Limited

Trans RF MOSFET N-CH 70V 5-Pin NI-1230 T/R [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Transistor Technology / Material: SILICON
  • Polarity: N-Channel; N-CHANNEL
  • Operating Mode: Enhancement; ENHANCEMENT MODE
Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin(3+Tab) SOT-143 T/R -- 376-BF1005SE6327HTSA1 [BF1005SE6327HTSA1 from Infineon Technologies AG]
from Utmel Electronic Limited

Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin(3+Tab) SOT-143 T/R [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Noise Figure: 1.6
  • Power Gain: 22
  • PD: 200
Transistors RF MOSFET 2170MHZ 10W -- 568-MRF5S21045NBR1 [MRF5S21045NBR1 from NXP Semiconductors]
from Utmel Electronic Limited

Transistors RF MOSFET 2170MHZ 10W [See More]

  • Packing Method: Tape Reel; Tape & Reel (TR)
  • Power Gain: 14.5
  • Output Power: 10