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Supplier: DigiKey
Description: Photodiode 1550nm 7ns TO-8 Style, 12 Leads
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Rise Time: 7 ns
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Supplier: DigiKey
Description: Photodiode 1550nm 2-SMD
- Operating Temperature: -20 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
- Spectral Response: IR
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Supplier: DigiKey
Description: Photodiode 1550nm TO-206AA, TO-18-3 Metal Can
- Dark Current: 5 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Sensitivity: 0.9500 A/W
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Supplier: DigiKey
Description: Photodiode 1300nm, 1550nm 70ps Module
- Active Area Diameter or Length: 0.1000 mm
- Dark Current: 1 nA
- Operating Temperature: -40 to 125 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Electro Optical Components, Inc.
Description: IMM offers a variety of fiber optic standard components with different receptacles and in pigtail design, including laser diodes with wavelength ranges from 635 nm up to 1550 nm, SM and MM VCSELs, Receivers 850 nm and 1300 nm, as well as Fiber Collimators with
- Spectral Response Range: 850 to 1310 nm
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes 90 GHz balanced photodetector, dual input: SC/APC connector, output: W1-female connector, single wavelength 1550nm, low PDL
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes 100 GHz balanced photodetector, dual input: SC/APC connector, output: W1-female connector, single wavelength 1550nm, low PDL
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE 1550NM TO8
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Supplier: ODG (Origin Data Global)
Description: SENSOR PHOTODIODE 1550NM TO206AA
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE 1550NM TO8
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE 1550NM MODULE
- VR: 80 volts
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE 1550NM TO206AA
- VR: 80 volts
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Supplier: SemiNex Corporation
Description: 4-PIN structure allows for efficient heat dissipation, which enhances the diode's stability and longevity under continuous operation. The inclusion of a photodiode within the same package enables real-time monitoring and feedback control of the laser output, ensuring consistent performance
- Laser Output: Continuous Wave
- Laser Power: 3300 milliwatts
- Laser Type: Laser Diodes
- Operating Current Range: 12000 milliamps
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Supplier: Newport MKS
Description: The LD-1550-21B Fiber Coupled Laser Diode consists of Fabry-Perot lasers, having a fiber pigtail precisely attached for optimum coupling efficiency. This 1550 nm center wavelength version has a typical 1.5 mW of output power and includes a back facet photodiode. It is
- Configuration: Specialty / Other
- Lamp / Output Power: 0.0015 watts
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Supplier: RS Components, Ltd.
Description: responsivity. Low noise. Spectral range: 900nm to 1700nm Wavelength of Peak Sensitivity = 1550nm Package Type = Pigtail Mounting Type = Through Hole Number of Pins = 3 Diode Material = InGaAs Minimum Wavelength Detected = 900nm Maximum Wavelength Detected =
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Leaded, Other
- Sensitivity: 0.9500 A/W
- Spectral Response Range: 900 to 1700 nm
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Supplier: RS Components, Ltd.
Description: responsivity. Low noise. Spectral range: 900nm to 1700nm Wavelength of Peak Sensitivity = 1550nm Package Type = TO-46 Mounting Type = Through Hole Number of Pins = 3 Diode Material = InGaAs Minimum Wavelength Detected = 900nm Maximum Wavelength Detected =
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
- Spectral Response Range: 900 to 1700 nm
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Supplier: RS Components, Ltd.
Description: The FCI-InGaAs-xxx-x series, from OSI Optoelectronics, are large active area InGaAs photodiodes. They are a range of IR sensitive detectors which offer high responsivity (1100-1620nm). They come in TO-46 or TO-5 packages with a flat window. Suitable applications for this family of
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
- Sensitivity: 0.9500 A/W
- Spectral Response Range: 1100 to 1620 nm
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Supplier: RS Components, Ltd.
Description: The FCI-InGaAs-xxx-x series, from OSI Optoelectronics, are large active area InGaAs photodiodes. They are a range of IR sensitive detectors which offer high responsivity (1100-1620nm). They come in TO-46 or TO-5 packages with a flat window. Suitable applications for this family of
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
- Sensitivity: 0.9500 A/W
- Spectral Response: IR
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Supplier: Quiktron, Inc.
Description: leave you amazed at the speed and accuracy in which optical fibers are fully analyzed and stored to an internal disk. By using high performance avalanche photodiodes, lasers, and sophisticated A/D circuitry, the FiberWarrior significantly reduces test times as compared to other OTDRs.
- Connector Type: FC
- Wavelength Range: 1310 to 1550 nm
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Supplier: Quiktron, Inc.
Description: leave you amazed at the speed and accuracy in which optical fibers are fully analyzed and stored to an internal disk. By using high performance avalanche photodiodes, lasers, and sophisticated A/D circuitry, the FiberWarrior significantly reduces test times as compared to other OTDRs.
- Connector Type: FC
- Wavelength Range: 1310 to 1550 nm
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Supplier: Newport MKS
Description: The PL15P1.51FCB-N Fiber Coupled Laser Diode consists of Fabry-Perot lasers, having a fiber pigtail precisely attached for optimum coupling efficiency. This 1550 nm center wavelength version has a typical 1.5 mW of output power and includes a back facet photodiode. It is
- Configuration: Specialty / Other
- Lamp / Output Power: 0.0015 watts
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Supplier: Newport MKS
Description: The PL15CE0021FCB-N Fiber Coupled Laser Diode consists of Distributed Feedback (DFB) lasers, having a fiber pigtail precisely attached for optimum coupling efficiency. This 1550 nm center wavelength version has a typical 2 mW of output power and includes a back facet photodiode,
- Configuration: Specialty / Other
- Lamp / Output Power: 0.0020 watts
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Supplier: Electro Optical Components, Inc.
Description: spectral range from 400 to 1050 nm and 900 to 1700 nm, respectively. The amplifier transimpedance is 107 V/A resulting in a maximum conversion gain of 9.5 x 106 V/W at 1550 nm for the InGaAs model. Due to the low noise performance of the transimpedance amplifier the
- Output Type: Voltage Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 400 to 1700 nm
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Supplier: Electro Optical Components, Inc.
Description: The series HCA-S-400M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-400M is available with either a fast Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1700 nm,
- Output Type: Voltage Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 320 to 1700 nm
- Supply Voltage: 15 volts
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Supplier: Electro Optical Components, Inc.
Description: The series HCA-S-200M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-200M is available with either a fast large area Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1650
- Output Type: Voltage Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 320 to 1700 nm
- Supply Voltage: 15 volts
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Supplier: Broadcom Inc.
Description: -pHEMT RF amplifier and its bias network. A receptacle designed according to the CEI/IEC 61754-13 standard allows coupling of the optical signal by means of a FC fiber patchcord. The receiver is optimized for operation at 1310 nm and 1550 nm but may be used over a wide
- Cable Type: Single Mode
- Connector Type: FC
- Operating Temperature: -40 to 185 F
- Photodiode Semiconductor: InGaAs (900nm to 1700nm)
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Supplier: OSI Optoelectronics
Description: multimode optical fiber pigtail, which allows excellent coupling with either single mode or multimode fiber systems. Product Features High Sensitivity High Overload Power Wide Dynamic Range 850 nm, 1310 nm, 1550 nm Operation Hermetic
- Amplifier Type: Transimpedance
- Bandwidth: 3 to 250 MHz
- Cable Type: Single Mode / Multimode
- Connector Type: FC, LC, SC, ST, Other
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Supplier: ValueTronics International, Inc.
Description: 83446A Lightwave clock/data receiver is designed to extract clock and data information from digitally modulated lightwave signals at the SONET/SDH data rate of 2.48832 Gb/sec (OC-48/STM-16). It incorporates a high-gain avalanche photodiode (APD), gain-controlled amplifier, and clock/data
- Form Factor: Hand Held
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Supplier: ValueTronics International, Inc.
Description: components 1300, or 1550 nm operation Reflection measurements with <1 mm resolution <5 mm two-event resolution up to 50 dB optical dynamic range The Keysight Agilent HP 8703A light wave component analyzer has a 20 GHz modulation frequency range plus optical
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Supplier: ValueTronics International, Inc.
Description: measurement software Performance verification procedure with verification device 45 MHz to 50 GHz modulation range LAN connectivity 1550 nm optical carrier The Agilent HP 86030A lightwave component analyzer provides measurement capability for optical and
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Supplier: Hamamatsu Photonics Europe
Description: High-speed response InGaAs APD The G8931 series are InGaAs APDs used for distance measurement, optical communication, and low-light-level detection. The G8931-04 provides high-speed response at 2.5 Gbps, which is necessary for SONET, G/GE-PON, and other optical trunk lines. Features - High-speed
- Active Area Diameter or Length: 0.0400 mm
- Active Area Height: 0.0400 mm
- Dark Current: 65 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Hamamatsu Photonics Europe
Description: Long wavelength type (cutoff wavelength: 1.87 µm) Features - Cutoff wavelength: 1.87 µm - One-stage TE-cooled - Low cost - Photosensitive area: f1 mm - Low noise - High sensitivity - High reliability - High-speed response
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 10 nA
- Photodiode Material: Indium Gallium Arsenide
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Supplier: Hamamatsu Photonics Europe
Description: Photodiode array for DWDM monitor
- Array: Yes
- Dark Current: 0.2000 nA
- Photodiode Material: Indium Gallium Arsenide
- Sensitivity: 0.9500 A/W
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Supplier: Hamamatsu Photonics Europe
Description: Long wavelength type (cutoff wavelength: 1.85 µm) Features - Cutoff wavelength: 1.85 µm - Two-stage TE-cooled - Low cost - Photosensitive area: f3 mm - Low noise - High sensitivity - High reliability - High-speed response
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 50 nA
- Photodiode Material: Indium Gallium Arsenide
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Supplier: OSI Optoelectronics
Description: FCI-InGaAs-XXX-WCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of a line of monitor photodiodes mounted on metallized ceramic substrates. These compact assemblies are designed for ease of integration. The chips can be epoxy or Eutectic mounted onto the ceramic
- Active Area Diameter or Length: 0.3000 mm
- Dark Current: 0.0500 nA
- Noise Equivalent Power (NEP): 4.50E-15 W/Hz½
- Operating Temperature: -40 to 85 C
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its exceptional performance metrics. It boasts a maximum dark current of just 50 nA, which is critical for low-light applications, and a terminal capacitance of 2.0 pF, reducing noise and enhancing signal clarity. With a peak sensitivity wavelength of 1550 nm and a photosensitivity of 0.8 A/W, it (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics Europe -
15978-0020P is its exceptional performance metrics. It boasts a maximum dark current of just 50 nA, which is critical for low-light applications, and a terminal capacitance of 2.0 pF, reducing noise and enhancing signal clarity. With a peak sensitivity wavelength of 1550 nm and a photosensitivity of 0 (read more)
Browse Avalanche Diodes Datasheets for Hamamatsu Photonics Europe
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Development of a non-contact PZT excitation and sensing technology via laser
1550 nm photodiode .
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Spatial Characterization of Germanium-on-Silicon C-Band PIN Photodiodes
Recently high performance 1550 nm photodiodes have been realized on silicon by the growth of lattice mismatched growth of strained germanium.
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New Facilities for the Measurements of High-Temperature Thermophysical Properties at LNE
1550 nm photodiode .
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http://dspace.mit.edu/bitstream/handle/1721.1/57412/RLE_PR_140_01_01s_01.pdf?sequence=1
Initial results from measurements on 1550 nm photo- diodes grown on GaAs have been obtained.
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Optical high frequency test structure and test bench definition for on wafer silicon integrated noise source characterization up to 110 GHz based on Germanium-...
Continuous wave signals have been measured from these 1550 nm photodiodes , with RF power higher than −20 dBm at 109 GHz.
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Telecommunications technology-based terahertz sources
The highest 23 dB band- width reported for any 1550 nm photodiode , 310 GHz, was obtained with a UTC photodiode with a very small area (5 mm2 ) and terminated with a 12.5 V load [18].
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Limitations imposed by stimulated Raman scattering of 1550 nm high-energy pulse transmission
The temporal and spectral distributions of the output pulses were monitored at 12 km intervals with an InGaAs 1550 nm photodiode and an 300-1800 nm Anritsu MS9701 optical spectrum analyzer.
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Digital and Analog Fiber Optic Communications for CATV and FTTx Applications
As a conclusion, if the transmitter’s 1310-nm reflected beam hits the conical washer surrounding the lens of the 1550 - nm photodiode , it may be deflected to some desired absorption point.
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InP-based monolithically integrated 1310/1550nm diplexer/triplexer
8.5 1550nm waveguide photodiode .
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Non-Geiger-mode single-photon counting APDs with high detection probability and afterpulse-free performance
We report high gain, high sensitivity 1064- 1550 nm avalanche photodiodes (APDs) that are capable of single photon counting in the linear mode below the breakdown voltage and at room temperature.