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Supplier: DigiKey
Description: Photodiode 1550nm 7ns TO-8 Style, 12 Leads
- Spectral Response Range: 1,100 to 1,700 nm
- Rise Time: 7 ns
- Operating Temperature: -40 to 70 C
- Photodiode Type: Avalanche Photodiode
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE 1550NM TO8
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Supplier: Newport MKS
Description: (SMSR). The standard 14-pin butterfly integrates TEC, thermistor, monitor PD and an output isolator. DFB Single Frequency Laser Diodes We offer single frequency 1310 and 1550 nm DFB laser diode assemblies for those applications requiring narrow line width laser sources. The DFB devices
- Wavelength Range: 1,550 nm
- Laser Power: 20 milliwatts
- Operating Temperature Range: -10 to 60 C
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Supplier: SemiNex Corporation
Description: 4-PIN structure allows for efficient heat dissipation, which enhances the diode's stability and longevity under continuous operation. The inclusion of a photodiode within the same package enables real-time monitoring and feedback control of the laser output, ensuring consistent performance
- Wavelength Range: 1,550 nm
- Laser Power: 3,300 milliwatts
- Operating Voltage: 1.7 volts
- Operating Current Range: 12,000 milliamps
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Supplier: Newport MKS
Description: Ratio (SMSR). The standard 14-pin butterfly integrates TEC, thermistor, monitor PD and an output isolator. DFB Single Frequency Laser Diodes We offer single frequency 1310 and 1550 nm DFB laser diode assemblies for those applications requiring narrow line width laser sources. The DFB
- Wavelength Range: 1,550 nm
- Laser Power: 50 milliwatts
- Operating Temperature Range: -10 to 60 C
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Supplier: Electro Optical Components, Inc.
Description: IMM offers a variety of fiber optic standard components with different receptacles and in pigtail design, including laser diodes with wavelength ranges from 635 nm up to 1550 nm, SM and MM VCSELs, Receivers 850 nm and 1300 nm, as well as Fiber Collimators with
- Spectral Response Range: 850 to 1,310 nm
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Supplier: ODG (Origin Data Global)
Description: SENSOR PHOTODIODE 1550NM TO206AA
- Sensor Technology: Optical Linear Encoder
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes 90 GHz balanced photodetector, dual input: SC/APC connector, output: W1-female connector, single wavelength 1550nm, low PDL
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Supplier: Quiktron, Inc.
Description: leave you amazed at the speed and accuracy in which optical fibers are fully analyzed and stored to an internal disk. By using high performance avalanche photodiodes, lasers, and sophisticated A/D circuitry, the FiberWarrior significantly reduces test times as compared to other OTDRs.
- Wavelength Range: 1,310 to 1,550 nm
- Connector Type: FC
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Supplier: Quiktron, Inc.
Description: leave you amazed at the speed and accuracy in which optical fibers are fully analyzed and stored to an internal disk. By using high performance avalanche photodiodes, lasers, and sophisticated A/D circuitry, the FiberWarrior significantly reduces test times as compared to other OTDRs.
- Wavelength Range: 1,310 to 1,550 nm
- Connector Type: FC
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Supplier: Newport MKS
Description: The PL15P1.51FCB-N Fiber Coupled Laser Diode consists of Fabry-Perot lasers, having a fiber pigtail precisely attached for optimum coupling efficiency. This 1550 nm center wavelength version has a typical 1.5 mW of output power and includes a back facet photodiode. It is
- Lamp / Output Power: 0.0015 watts
- Features: Specialty / Other
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Supplier: Newport MKS
Description: Ratio (SMSR). The standard 14-pin butterfly integrates TEC, thermistor, monitor PD and an output isolator. DFB Single Frequency Laser Diodes We offer single frequency 1310 and 1550 nm DFB laser diode assemblies for those applications requiring narrow line width laser sources. The DFB
- Wavelength Range: 1,310 nm
- Laser Power: 150 milliwatts
- Operating Temperature Range: -20 to 65 C
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Supplier: Electro Optical Components, Inc.
Description: range from 400 to 1050 nm and 900 to 1700 nm, respectively. The amplifier transimpedance is 107 V/A resulting in a maximum conversion gain of 9.5 x 106 V/W at 1550 nm for the InGaAs model. Due to the low noise performance of the transimpedance amplifier the minimum NEP is
- Spectral Response: 400 to 1,700 nm
- Module Type: PIN Photodiode
- Output Type: Voltage Output
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Supplier: Electro Optical Components, Inc.
Description: IMM offers a variety of fiber optic standard components with different receptacles and in pigtail design, including laser diodes with wavelength ranges from 635 nm up to 1550 nm, SM and MM VCSELs, Receivers 850 nm and 1300 nm, as well as Fiber Collimators with
- Wavelength Range: 850 nm
- Operating Current Range: 9 to 12 milliamps
- Laser Wavelength: Infrared
- Laser Type: Laser Diodes
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Supplier: Electro Optical Components, Inc.
Description: The series HCA-S-200M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-200M is available with either a fast large area Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1650
- Spectral Response: 320 to 1,700 nm
- Supply Voltage: 15 volts
- Module Type: PIN Photodiode
- Output Type: Voltage Output
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Supplier: OSI Optoelectronics
Description: pigtail, which allows excellent coupling with either single mode or multimode fiber systems. Product Features High Sensitivity High Overload Power Wide Dynamic Range 850 nm, 1310 nm, 1550 nm Operation Hermetic Package Custom Bandwidths Available Product Applications
- Data Rate: 6 to 350 Mbps
- Sensitivity: -56 to -32 dB
- Dynamic Range: 25 to 53 dB
- Bandwidth: 3 to 250 MHz
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Supplier: Broadcom Inc.
Description: amplifier and its bias network. A receptacle designed according to the CEI/IEC 61754-13 standard allows coupling of the optical signal by means of a FC fiber patchcord. The receiver is optimized for operation at 1310 nm and 1550 nm but may be used over a wide wavelength range
- Operating Temperature: -40 to 185 F
- Connector Type: FC
- Photodiode Semiconductor: InGaAs (900nm to 1700nm)
- Receiver Type: PIN
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Supplier: ValueTronics International, Inc.
Description: The 83446A is a Lightwave Clock/Data Receiver from Agilent. Additional Features: 2.48832 Gb/sec or 622.08 Mb/sec Operates Over Full Range of Power Levels 1310/1550 nm Operation Auxiliary Input Recovers Clock and Data The Agilent 83446A Lightwave clock/data receiver is designed to
- Test Equipment Type: Hand Held
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Supplier: ValueTronics International, Inc.
Description: measurement in a graph, where power is the vertical scale and wavelength is the horizontal scale. Additional Features: 300 kHz to 20 GHz modulation frequency Calibrated frequency response measurements of high-speed optical, electro-optical, and electrical components 1300, or 1550 nm
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Supplier: Hamamatsu Photonics Europe
Description: Small package, surface mount type, Active area: Φ1.0 mm
- Sensitivity: 1 A/W
- Spectral Response Range: 900 to 1,700 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
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Supplier: RS Components, Ltd.
Description: High Speed InGaAs Photodiode,300um
- Spectral Response Range: 900 to 1,700 nm
- Photodiode Spectral Response: IR
- Features: Other
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for medium power to 300 W
- Spectral Response Range: 150 to 10,600 nm
- Active Area Diameter or Length: 50 mm
- Rise Time: 2,500,000,000 ns
- Photodiode Spectral Response: IR, UV, Visible
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Supplier: OSI Optoelectronics
Description: FCI-InGaAs-XXX-CCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates with glass windows. These devices have a glass window attached to the ceramic where fibers can be epoxy
- Sensitivity: 0.95 A/W
- Spectral Response Range: 1,100 to 1,650 nm
- Active Area Diameter or Length: 0.4000000000000001 mm
- Rise Time: 3 ns
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Supplier: First Sensor AG
Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options include
- Spectral Response Range: 600 to 1,700 nm
- Active Area Diameter or Length: 1 mm
- Rise Time: 15 ns
- Dark Current: 1 to 10 nA
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Supplier: MACOM
Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature stability and are designed to be
- Sensitivity: 0.8 to 0.9 A/W
- Spectral Response Range: 1,200 to 1,650 nm
- Photodiode Type: Avalanche Photodiode
- Photodiode Package: Bare Die, Surface Mount Technology (SMT)
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Supplier: California Eastern Laboratories - CEL
Description: The NR4510 Series is an InGaAs 2.5 Gb/s APD ROSA with an internal pre-amplifier in a receptacle type package designed for SFP transceiver with LC duplex receptacle ideal as a receiver for OC-48 applications.
- Sensitivity: 0.8 A/W
- Spectral Response Range: 1,310 to 1,550 nm
- Active Area Diameter or Length: 0.05000000000000001 mm
- Operating Temperature: -40 to 85 C
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Supplier: Ophir-Spiricon Inc.
Description: General use for large aperture pulsed lasers
- Spectral Response Range: 150 to 20,000 nm
- Active Area Diameter or Length: 46.00000000000001 mm
- Photodiode Spectral Response: IR, UV, Visible
- Features: Other
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for average power from 60 um to 10 KW
- Spectral Response Range: 190 to 20,000 nm
- Active Area Diameter or Length: 29.000000000000004 mm
- Rise Time: 1,500,000,000 ns
- Photodiode Spectral Response: IR, UV, Visible
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Supplier: MACOM
Description: MACOM offers various PIN photodiodes to support PAM-4 and 400G Ethernet applications with both singlets and arrays. Our proprietary design offers high quantum efficiency and high reliability for industry leading performance.
- Sensitivity: 0.88 A/W
- Spectral Response Range: 1,200 to 1,650 nm
- Photodiode Package: Bare Die
- Photodiode Spectral Response: IR
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Supplier: OSI Optoelectronics
Description: FCI-H155/622M-InGaAs-70 series are high-speed 70µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and amplification. Low
- Spectral Response Range: 1,100 to 1,650 nm
- Active Area Diameter or Length: 0.07100000000000001 mm
- Operating Temperature: -40 to 85 C
- Photodiode Spectral Response: IR
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its exceptional performance metrics. It boasts a maximum dark current of just 50 nA, which is critical for low-light applications, and a terminal capacitance of 2.0 pF, reducing noise and enhancing signal clarity. With a peak sensitivity wavelength of 1550 nm and a photosensitivity of 0.8 A/W, it (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics Europe -
15978-0020P is its exceptional performance metrics. It boasts a maximum dark current of just 50 nA, which is critical for low-light applications, and a terminal capacitance of 2.0 pF, reducing noise and enhancing signal clarity. With a peak sensitivity wavelength of 1550 nm and a photosensitivity of 0 (read more)
Browse Avalanche Diodes Datasheets for Hamamatsu Photonics Europe
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Development of a non-contact PZT excitation and sensing technology via laser
1550 nm photodiode .
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Spatial Characterization of Germanium-on-Silicon C-Band PIN Photodiodes
Recently high performance 1550 nm photodiodes have been realized on silicon by the growth of lattice mismatched growth of strained germanium.
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New Facilities for the Measurements of High-Temperature Thermophysical Properties at LNE
1550 nm photodiode .
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http://dspace.mit.edu/bitstream/handle/1721.1/57412/RLE_PR_140_01_01s_01.pdf?sequence=1
Initial results from measurements on 1550 nm photo- diodes grown on GaAs have been obtained.
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Optical high frequency test structure and test bench definition for on wafer silicon integrated noise source characterization up to 110 GHz based on Germanium-...
Continuous wave signals have been measured from these 1550 nm photodiodes , with RF power higher than −20 dBm at 109 GHz.
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Telecommunications technology-based terahertz sources
The highest 23 dB band- width reported for any 1550 nm photodiode , 310 GHz, was obtained with a UTC photodiode with a very small area (5 mm2 ) and terminated with a 12.5 V load [18].
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Limitations imposed by stimulated Raman scattering of 1550 nm high-energy pulse transmission
The temporal and spectral distributions of the output pulses were monitored at 12 km intervals with an InGaAs 1550 nm photodiode and an 300-1800 nm Anritsu MS9701 optical spectrum analyzer.
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Digital and Analog Fiber Optic Communications for CATV and FTTx Applications
As a conclusion, if the transmitter’s 1310-nm reflected beam hits the conical washer surrounding the lens of the 1550 - nm photodiode , it may be deflected to some desired absorption point.
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InP-based monolithically integrated 1310/1550nm diplexer/triplexer
8.5 1550nm waveguide photodiode .
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Non-Geiger-mode single-photon counting APDs with high detection probability and afterpulse-free performance
We report high gain, high sensitivity 1064- 1550 nm avalanche photodiodes (APDs) that are capable of single photon counting in the linear mode below the breakdown voltage and at room temperature.