2n3055 Equivalent Transistors

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, 1A, 80V, 1-ELEMENT, TRANSISTORS, 2SB1025 EQUIVALENT. FREE 2 YEAR RADWELL WARRANTY

Description: The 2N4351 Single, N-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-72 4L ROHS and Tested Die. All Linear Systems devices are available with special testing to

• Transistor Type: MOSFET
• Polarity: N-Channel
• Features: Other

Description: The 2N/PN/SST4416 Series Single, High Frequency, N-Channel JFET Amplifier is a direct replacement for the Fairchild, NXP, and Siliconix-Vishay equivalent part. It is ideal for High Frequency Applications. Available in TO-92 3L ROHS, TO-72 4L ROHS, SOT-23 3L ROHS, and Tested Die. All Linear

• Transistor Type: JFET
• Polarity: N-Channel
• Features: Other
• Package Type: SOT23, TO-92

Description: Alternative Parts (Cross-Reference): Cross Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Frequency: 700MHz ~ 2GHz Frequency Stability:

• Package Type: SOT3

Description: The 2N5018 Series Low On-Resistance, P-channel JFET Switch is a direct replacement for the Intersil and Siliconix-Vishay equivalent part. It is ideal for Low Resistance Switching Applications. Available in TO-18 3L ROHS package, as well as Tested Die. All Linear Systems devices are available

• Transistor Type: JFET
• Features: Other
• Polarity: P-Channel

Description: 1.1 This test method covers how 2N2222A silicon bipolar transistors can be used either as dosimetry sensors in the determination of neutron energy spectra, or as silicon 1-MeV equivalent displacement damage fluence monitors.

Description: for high-current applications. The TOLL package is the perfect solution for high power density applications that benefit from 30 percent smaller footprint compared to D2PAK 7-pin and lower package inductances. Summary of Features Low RDS(on) in compact package, 16% lower than the equivalent

• r_DS(on): 0.003 ohms
• T_J: -55 to 175 C
• V_GS(off): 2 to 4 volts
• Transistor Type: MOSFET, Power MOSFET

Description: between input and output. Separate connections for the photodiode bias and output transistor collector increase the speed up to a hundred times over that of a conventional photo-transistor coupler by reducing the base-collector capacitance. The ACPL-K43T and ACPL-K44T IPM optocouplers

• Isolation Voltage: 1,140 volts
• Operating Temperature: -40 to 125 C
• Input: DC
• Features: Other

Description: The 72831 is a 2K x 9 dual synchronous (clocked) FIFO . The device is functionally equivalent to two 72231 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each of the two FIFOs has a 9-bit input data port and a 9-bit output data port. The

• Density: 18 kbits
• Number of Words: 2 k
• Data Rate: 40 MHz
• Operating Temperature: 0 to 70 C

Description: standard and screened versions. Features: · High Reliability · Base lead provided for conventional transistor biasing · Very high gain, high voltage transistor · Stability over wide temperature range. · High voltage electrical isolation

• Isolation Voltage: 1,000 volts
• Rise Time: 15 µs
• Collector Emitter Breakdown Voltage: 40 volts
• Operating Temperature: -55 to 125 C

Description: The 72V831is a 2K x 9 dual synchronous FIFO that is functionally equivalent to two 72V231 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each FIFOs has a 9-bit input and output data port. The Read Clock can be tied to the Write Clock for

• Density: 18 kbits
• Number of Words: 2 k
• Data Rate: 66 MHz
• Operating Temperature: -40 to 85 C

Description: The 72V835 is a 2K x 18 dual sync FIFO with clocked read and write controls that is functionally equivalent to two 72V235 FIFO ’s in a single package with all associated control, data, and flag lines assigned to independent pins. This FIFO is useful for optical disk controllers, Local Area

• Density: 36 kbits
• Number of Words: 2 k
• Data Rate: 66 MHz
• Operating Temperature: 0 to 70 C

Description: The SY89222L is a dual TTL-to-differential LVPECL translator with a +3.3V power supply. Because LVPECL (Positive ECL) levels are used, only +3.3V and ground are required. The SY89222L is functionally equivalent to the SY100ELT22L but in an ultra-small 8-lead MLF™ package that features a 70%

• Input Voltage: 3.3 volts
• Translation Voltage (Output): 3.3 volts
• Propagation Delay: 0.6 ns
• Operating Current: 25 mA

Description: • 2.4"(diagonal), 320 x RGB x 240dots, 262k colors, Transmissive, TFT LCD module. • Viewing Direction: 6'clock. • Driving IC: ILI9341 or equivalent TFT controller/driver. • 16-bits data bus (I80 system interface). • Logic voltage: 2.8V (typ.). • Without Touch panel.

• Technology: AMLCD, Thin Film Transistor (TFT)
• Display Type: Graphic Display

Description: Wide operating range 4.5 to 18V Low equivalent input capacitance (typ) 6pF Inputs = Logic 1 for any input from 2.4V to VS ESD protected

• Transistor Type: MOSFET

Description: P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to

• Features: Other
• Polarity: P-Channel
• Package Type: TO-247

Description: P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to

• Features: Other
• Polarity: P-Channel

Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency,

Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency,

Description: MHz 2 Channels Built-in component tester for capacitors, inductors, diodes, transistors, zener diodes Dual or single trace operation 5 mV/div sensitivity Compact low profile design Calibrated 23-step time base with X10 magnifier Video sync trigger Alternate/chop sweep Sum and difference

• Bandwidth: 30 MHz
• Number of Input Channels: 2 (# channels)

Description: the simulated battery Compute battery capacity in Amp-Hour and Equivalent Series Resistance (ESR) Program the battery SOC, Voc, capacity, and resistance Provide two modes of simulation–dynamic and static Monitor charge/discharge current and voltage Output up to 120W of low noise, linear

• DC Output Power: 119.9999999999997 watts
• Type: DC Power Supply

Description: provides background information and recommendations on gamma-ray testing of electronics using nuclear reactors. 1.2 Methods are presented for ensuring and validating consistency in neutron displacement damage testing of electronic parts such as integrated circuits, transistors, and diodes.

Description: predominantly in series, as is the case with most junction capacitance measurements, the capacitance indicated is also essentially the same as the equivalent series capacitance value, provided that the series loss does not result in a Q value below 10. The Boonton 72BD is recommended for most

Description: can use them in place of heat sinks by using wire bonding to electrically connect the circuit board’s numerous traces. This not only requires less space on the board but also makes installing components like power transistors simpler. The presence of a metal substrate makes it possible to