Products/Services for FET Reflex Receiver
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Transistors - (919 companies)...transistors (FETs), also called unipolar transistors, are transistors with only two layers of semiconductor material. They include gate, source, and drain components. The gate is the semiconductor layer and terminal that modulates current via...Transistor TypePolarityPackage Type -
RF Receivers - (363 companies)RF receivers are electronic devices that enable a particular radio signal to be separated from all others being received and converted into a format for video, voice, or data. RF receivers are electronic devices that separate radio signals from one... -
Pulser-Receivers - (29 companies)Pulser-receivers generate ultrasonic pulses, which are propagated into materials for NDT testing. Pulser-receivers (also referred to as pulser/receivers) generate ultrasonic pulses, which are propagated into materials for nondestructive testing (NDT... -
Air Receivers - (31 companies)Air receivers serve as buffers between a compressor and the consumption mechanism of a compressed air system. Air receivers serve as buffers between a compressor and the consumption mechanism of a compressed air system. They are essential...
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Magnetic Receivers - (5 companies)Magnetic receivers use the electromagnetic principle to receive and analyze signals. The simplest of these devices is the telephone. Magnetic receivers use the electromagnetic principle to receive and analyze signals. Electromagnetic principle can... -
Telemetry Receivers and Telemetry Transmitters - (365 companies)Telemetry receivers and telemetry transmitters are data acquisition components used to gather information from remote locations via wireless communication. Telemetry receivers and telemetry transmitters can be produced as separate receiver...
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Metal-Oxide Semiconductor FET (MOSFET) - (362 companies)While MOSFETs technically have four terminals -- source, gate, drain, and body (or S,G,D, and B) -- the body terminal is typically connected to the source, effectively making them three terminal devices like other field-effect transistors (FET...
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Radios - (369 companies)...of a transmitter, receiver, and antenna. They are available in mobile and base configurations. Performance. Unlike cellular phones, radios do not require a monthly contract or carry per-call charges. In the United States, two-way radios are regulated...
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Radio Receiver ICs - (59 companies)Radio receiver ICs support worldwide radio band requirements, including frequency modulation (FM), FM radio data system (RDS), amplitude modulation (AM), long wave (LW), short wave (SW), and weather bands. These integrated circuits (ICs...
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Fiber Optic Receivers - (129 companies)Fiber optic receivers are instruments that convert light into electrical signals. They contain a photodiode semiconductor, signal conditioning circuitry, and an amplifier. How to Select Fiber Optic Receivers. Image Credit: Avago Technologies...
Product News
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Nexperia B.V.
E-mode GaN FETs Announcing the launch of e-mode GaN FETs for low & high voltage applications. Nexperia 's new portfolio includes two <= 150 V rated devices (3.2 m O and 7 m O) in WLCSP8 and FCLGA packages, as well as five 650 V rated devices, with RDS(on) values between 80 m O - 190 m O, in a choice of DFN 5x6 mm and DFN 8x8 mm packages. Nexperia e-mode GaN FETs provide the ideal balance between switching performance and robustness, for use in industrial and consumer applications. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Nexperia B.V.
MOSFET & GaN FET Application Handbook Written by engineers - for engineers - we share expertise and learnings that our engineering teams have built up over many years of helping customers in a variety of sectors take their applications from initial concept, though prototyping and on into final production. With over 600 pages of useful guidance on common topics and issues that the design engineer is likely to encounter, the handbook provides insight into the sometimes confusing and complex behaviour of MOSFETs and Power GaN FETs... (read more) -
DigiKey
LTC7893 Synchronous Boost Controller for GaN FETs The Analog Devices LTC7893 synchronous boost controller drives all N-channel synchronous gallium nitride (GaN) field-effect transistor (FET) power stages from output voltages up to 100 V. The LTC7893 solves many of the challenges traditionally faced when using GaN FETs. This high-performance step-up DC/DC switching regulator controller simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon metal-oxide... (read more)Browse IC Switching Voltage Regulators Datasheets for DigiKey -
Nexperia B.V.
GaN FETs in compact SMD packaging - CCPAK Bringing 20 years ' expertise in high-quality, robust SMD packaging to the GaN FET portfolio, we adopt proven technology to give industry-leading performance in a truly innovative package. CCPAK's copper-clip cascode design optimizes electrical and thermal performance, improves device reliability and reduces parasitic losses. Offered in both top-side (CCPAK1212i) and bottom-side cooled (CCPAK1212) package designs. The GAN039-650NTB, a 33 m O (typ.) Gallium Nitride (GaN) FET within... (read more) -
Nexperia B.V.
Nexperia expands 650V GaN FET portfolio Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 m O, 50 m O and 70 m O, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended portfolio provides power engineers with greater flexibility to balance efficiency, thermal performance and power density across high-power applications, including datacenter and telecom power supplies, renewable energy... (read more)Browse Transistors Datasheets for Nexperia B.V. -
Skyworks Solutions, Inc.
High Gain LNA for S and C-band Low Noise Receivers The SKY67180-306LF is a two-stage, low-noise amplifier (LNA) with active bias and high-linearity performance. The front end of the device provides an ultra-low noise figure (NF) while the output stage provides high gain, linearity, and efficiency. With excellent thermal performance, the SKY67180-306LF is rated for operation up to +105 C. The SKY67180-306LF is provided in a 4 x 4 mm, 16-pin Quad Flat No-Lead (QFN) package. (read more)Browse RF Amplifiers Datasheets for Skyworks Solutions, Inc. -
Intellisense Microelectronics Ltd.
Ultra-small background suppression sensor The reflex sensor with background suppression works with infrared light according to the angle measurement principle and is designed to detect objects against any background. The sensor always has the same switching distance, regardless of the color, shape and surface of the objects. Features: Ultra-small structure: 13.5*4.3*24mm. Sensing distance: 50mm. Less sensitive to target color. Ignores reflective backgrounds. Detects small objects. Single device to be installed. Suitable for limited (read more)Browse Photoelectric Sensors Datasheets for Intellisense Microelectronics Ltd. -
Allegro MicroSystems Inc.
New Dual Chip Set from Allegro MicroSystems The AHV85000 and AHV85040 is a dual chipset that offers a cost optimized solution for isolated gate drive for GaN FETs. When combined with one of the recommended external transformers, it provides a self-powered isolated gate drive solution that is ideal for GaN FETs in multiple applications and topologies. A selection of recommended third-party transformers are available, each optimized for different drive voltage and gate charge characteristics, including E-mode GaN (6 V drive... (read more)Browse Gate Drivers Datasheets for Allegro MicroSystems Inc. -
RIFTEK EUROPE Sp. z.o.o.
Measure Wire, Rod, Cylinder Diameters Precisely 1D Optical micrometers use a "shadow " measurement principle whereby collimated laser light is transmitted towards a receiver. The edges of the shadow cast by an object in the beam 's path are accurately measured by the detector array inside the receiver unit. Optical Micrometers are non-contact devices that ideally measure diameters of wires, rods and other cylinders in addition to gaps, edge positions and dimensional characteristics of geometric objects. (read more)Browse Optical Micrometers and Laser Micrometers Datasheets for RIFTEK EUROPE Sp. z.o.o. -
Husky Technologies™
Case Study: Thinwall Tub with In-mold Label Reflex platens achieved high part quality and low part costs with quick return on initial investment. High repeatability of moving Platen positioning decreased scrap rate by adding consistent in-mold label placement accuracy. Added Values. 35% reduced energy consumption. Annual savings of $30,000. Decreased scrap rate. Increased profitability. Read the full case study here >... (read more)
More Information
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Diagnostic Nuclear Medicine
…117, 167, 186, 234, 252 – FDOPA 18, 190 – FESP 315 – FET 253 – FLT … 118, 127 – Technegas 252 – Tetrofosmin 167, 248 – Thallium 27 – Tyrosine 27, 41, 190 – VIP 158 – Water 12, 47 – Xenon 67, 251 Receiver -operating-characteristic (ROC) 77 … 292 – Iterative 291 Reflex sympathetic dystrophy (RSD) 109…
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Author Index
Pt-MOS- FET . .... Read out electronics Recalibration Receiver Recrystallisation Recurrent networks Recycling biosensors Reference electrode Reflected impedance Reflection Reflex act Refractive index variation .
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1978 Index IEEE Transactions on Biomedical Engineering Vol. BME-25
…stimulators; three-channel vesical stimulator for sequential pulsing of detrusor muscle of urinary bladder; Naumann, Stephen; T-BME v25 n3 May 78 307-311 (2A 14) Implantable radio receivers biomedical telemetry; transmission and … F03) Integrated circuits; cf. FET integrated circuits; MOSFET integrated … BME v25 nI Jan 78 94-96 (2A04) Limbs ankle; joint compliance and reflex gain measurement; Goutlieb…
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Target Detection by Marine Radar
Alternatively, a FET transistor may be used in an oscillating positive feedback amplifier. .... Formerly, reflex klystron valves were used. .... a limited range, which if exceeded, may throw off to a large error, grossly degrading receiver performance.
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Fundamentals of Ground Radar for Air Traffic Control Engineers and Technicians
These gallium-arsenide- FET (GAsFET) devices are off-the-shelf technology taken from the satellite- receiver industry. .... Early in the development of 3-cm (X-band) radars in WWII, a reflex klystron was used…
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Électrophysiologique analysis and comparison at the Man of the reflex of Hoffmann and of the myotatique reflex
These flexural manceuvres promote aflleurs in eertains subjects, the appearance of spontaneous rebounds of the électromyographique activity and the presence of post-charging states extended from the type of the "iate-diseharge" of M_AGL~1)~R:fet ' toll. .... The importance of the " inhibition autog6niquc " in reflex eoordinations was recently still emphasized in a .... The today well admitted function, tendineux receivers of GOLGIles designate as the main players of these observable…
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Guest editorial
…systems is discussed in “Decision and Clock Recovery Circuits for Gigahertz Optical Fiber Receivers in Silicon NMOS … is pre- sented in “Optimum Design of a 4-Gbit /s GaAs MES- FET Optical Preamplifier,” .... ” In “Gigahertz Signal Processing Using Reflex Optoelec- tronic Switching Matrices,” D. K. W. Lam and…
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Optomechanical Design Of A Grating Power Combiner For Laser Diodes
The bias electronics utilized a feedback circuit to maintain optimum FET bias given changes in the laser's .... 66 / SPIE Vol. 1044 Optomechanical Design of Laser Transmitters and Receivers (1989). .... This retroreflects a small fraction of the beam back to the reflex detector (la) for wavelength feedback…
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Front cover and table of contents
...................R. B. Darling A 2-GHz Optical Receiver Using Commercially Available Components............A. Azizi and L. Altwegg An APD/ FET Optical Receiver Operating at 8 Gbit/s .................................................. ...........B. L. Kasper, J. .... Polak-Dingles, H.-L. A. Hung, and H. C. Huang Gigahertz SignalProcessing Using Reflex Optoelectronic Switching Matrices.
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2004 Index
micromachined reflex klystrons for operation, terahertz freqs., optim. .... MOS analog integrated circuits utilizing 0.18-µm PMOS transistors, 2.4-GHz receiver . .... 04 2004 9-12 Vol.1 phys. dyn. electro thermal large sig. model for RF LDMOS FETs .
