GaAs MESFET

Description: Guidelines for GaAs MMIC PHEMT/MESFET and HBT Reliability Accelerated Life Testing

Description: The RFAM3620 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and

• Power Gain: 36 dB
• Output Power: 63.09573444801933 watts
• Operating Frequency: 45 to 1,218 MHz
• Features: HEMT, MESFET, Other

Description: Qorvo's RFCM4363 is a Push Pull amplifier SMD module. The part employs GaAs MESFET, GaAs pHemt and GaN Hemt die and is operated from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. DC current of the

• Frequency Range: 45 to 1,218 MHz
• Minimum Gain: 28 dB
• Maximum Gain: 28 dB
• Noise Figure: 4.6 dB

Description: Qorvo's RFPD3890 is a hybrid power doubler amplifier module. The part employs GaAs MESFET, GaAs pHEMT and GaN HEMT die, has high output capability, and is operated from 40MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and

• Frequency Range: 40 to 1,003 MHz
• Minimum Gain: 27.5 dB
• Maximum Gain: 27.5 dB
• Noise Figure: 5 dB

Description: Qorvo's RFPP3870 is a Hybrid Push Pull amplifier module. The part employs GaAs MESFET die, GaAs pHemt die and GaN HEMT die and operates from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability.

• Frequency Range: 45 to 1,218 MHz
• Minimum Gain: 28.5 dB
• Maximum Gain: 28.5 dB
• Noise Figure: 4.6 dB

Description: The MAAM-010144 is a GaAs MESFET MMIC amplifier in a lead-free TSSOP-16LD exposed paddle package. The MMIC design is configured as a pair of cascode MESFET amplifiers for broadband performance. It is designed for integration in a 75 ? push-pull, low distortion, amplifier

• Frequency Range: 50 to 1,000 MHz
• Maximum Gain: 20.5 dB
• Noise Figure: 5.5 dB
• Features: Other

Description: MACOM's MASW4060G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4060G is fabricated

• Frequency Range: 0 to 4,000 MHz
• Insertion Loss: 1.2 dB
• Isolation (Port to Port): 30 dB
• Switching Speed: 0.000004 ms

Description: cellular, wireless LANs, GPS equipment and other gain / level control circuits. The MAATSS0019 is fabricated using a mature 1 micron GaAs MESFET process. The process features full chip passivation for increased performance and reliability.

• Frequency Range: 0.5 to 4 GHz
• Number of Bits (for Digital Attenuators): 4
• Insertion Loss: 2.5 dB
• Features: Other

Description: MACOM's MAIA-007495-000100 is an integrated assembly containing a GaAs FET MMIC LNA and GaAs FET mixer. This device is packaged in a 16leaded QSOP plastic surface mount package. The amplifier can be biased with either +3V or +5V, the mixer requires no DC bias. The conversion gain of

• Input Frequency Range: 1,500 to 2,400 MHz
• Output Frequency Range: 0 to 900 MHz
• Conversion Gain: 7 dB
• Noise Figure: 1.5 dB

Description: broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low

• Frequency Range: 0 to 6,000 MHz
• Insertion Loss: 0.4 to 1.2 dB
• Isolation (Port to Port): 19 to 43 dB
• Impedance: 75 ohms

Description: broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low

• Frequency Range: 0 to 18,000 MHz
• Insertion Loss: 0.3 to 2.1 dB
• Isolation (Port to Port): 25 to 65 dB
• Impedance: 75 ohms

Description: broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low

• Frequency Range: 50 to 50,000 MHz
• Insertion Loss: 1.5 dB
• Isolation (Port to Port): 37 dB
• Impedance: 75 ohms

Description: broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low

• Frequency Range: 0 to 50,000 MHz
• Insertion Loss: 0.1 to 2 dB
• Isolation (Port to Port): 22 to 70 dB
• Impedance: 75 ohms

Description: N-Channel GaAs MESFET Product overview: 2SK1646 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement

• Features: Bipolar RF Transistors

Description: MOSFETs C-X Band GaAs MESFET Product overview: NE722S01-T1B from NEC Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets,

• P_D: 250 milliwatts
• Features: MOSFET