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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors IGBTs IGBT Modules Package: Tray Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier
- Package Type: SOT3
- Transistor Type: IGBT
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: IXYS Category: Discrete Semiconductor Products Transistors IGBTs Single IGBTs Package: Tube Product Status: Active IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic)
- Package Type: SOT3
- Transistor Type: IGBT
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Vishay General Semiconductor - Diodes Division Category: Discrete Semiconductor Products Transistors IGBTs IGBT Modules Package: Tube Product Status: Active IGBT Type: Trench Field Stop Configuration: Single
- Package Type: SOT3
- Transistor Type: IGBT
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors IGBTs Single IGBTs Series: TrenchStop® Package: Tube Product Status: Not For New Designs IGBT Type: Trench Field Stop Voltage -
- Package Type: SOT3
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: performance testing Benefits Save design time Ease-of-use Fast IGBT power module evaluation Cross-reference test Potential Applications Automotive applications (Hybrid) electrical vehicles (H)EV Motor drives Commercial, construction and agricultural vehicles (CAV)
- Category: Development Board
- Supported System: Other
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Supplier: Infineon Technologies AG
Description: a high voltage, high speed IGBT gate driver with three independent high side and low side referenced output channels for three phase applications. 6ED2230S12T integrates protective features such as over-current protection with fast, and accurate fault reporting (+/-5%), shoot
- Driver Type: Three-phase
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 0.3500 amps
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Interconnection system with single phase IGBT PWM CSI between photovoltaic arrays and the utility line
The patterns are sent forward to the distributors from which they are distributed to each IGBT referring signals from the zero cross detector.
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Novel DSC-IPM for Compact Converters at Elevated Temperatures
The power devices of the IGBTs and diodes are labeled in cross reference to the schematic in Fig. 5(a).
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Dual-Side Cooled Novel IPM and Improved Capability of Inverter for Elevated-Temperature Operations
The power devices of the IGBTs and Diodes are labeled in cross - reference to the schematic in Figure 4 (a).
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Novel Dual-Side Thermal Interfacing of IPM for Elevated-Temperature Applications
The power devices of the IGBTs and Diodes are labeled in cross - reference to the schematic in Figure 4 (a).
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A novel analog method for sensorless closed-loop control of SRM without parameter estimation
zone will cross the reference value, and switch-off the IGBT of one outgoing phase unambiguously.
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A medium-voltage drive utilizing series-cell multilevel topology for outstanding power quality
A sinusoidal phase voltage reference is compared to the appropriate carrier, and the crossings cause the IGBT 's to switch, resulting in the lowest cell harmonic voltage being at 1200Hz plus and minus the fundamental.
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Evaluation of a novel analog based closed-loop sensorless controller for switched reluctance motor drive
Thus, only that particular phase current, which is switched-on in Lmin- zone, will cross the reference value (Ioref) first, and switch- off the IGBT of a pair-phase unambiguously as per Table- 1.1.
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Active damping filter for high bandwidth - Low ripple pulsed converters
One solution consists in suddenly change the state of the IGBT from the “off” to the “on” state, when the voltage crosses the reference for the first time.
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Flexible Power Transmission: The HVDC Options
As shown in the cross -section of Figure 2.26, the IGBT is achieved by adding a p+ layer; this layer is referred to as the collector of the IGBT but acts as ap emitter of a pnp bipolar transistor to the…
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Behavior analysis of the IGBT in ZCS commutation based in a soft modeling concept
…f e l OOkHz, a resonant current amplitude of 15A and an IGBT tum-off instant near the first zero- crossing of the collector current … was adjusted with the reference current ZRef variation of the instantwhen the IGBT is tumed off variation…