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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Vishay General Semiconductor - Diodes Division Category: Discrete Semiconductor Products Transistors IGBTs IGBT Modules Series: HEXFRED® Package: Bulk Product Status: Active IGBT Type: Trench
- Features: IGBT
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: onsemi Category: Discrete Semiconductor Products Transistors IGBTs Single IGBTs Package: Tube Product Status: Active IGBT Type: Trench Field Stop Power - Max: 306 W Switching Energy: 1.04mJ (on),
- Features: IGBT
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors>IGBTs>IGBT Modules Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Frequency: 15 MHz Frequency Stability: ±10ppm Frequency
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors>IGBTs>Single IGBTs Part Status: Obsolete Function: Multiple, NonProgrammable Output: 3-State Voltage - Supply: 3V Frequency Stability: ±20ppm @ 25°C
- Package Type: SOT3
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Supplier: Infineon Technologies AG
Description: for sequential development Facilitates practical lab experience Hands-on exploration of power module Gate driver feature assessment Phase current sensor performance testing Benefits Save design time Ease-of-use Fast IGBT power module evaluation Cross-reference test Potential
- Category: Development Board
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
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Supplier: Allied Electronics, Inc.
Description: has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side
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Supplier: Infineon Technologies AG
Description: FP25R12W2T4 | IGBT modules FP50R12N2T7 | IGBT modules FP10R12W1T7 | IGBT modules 1ED44176N01F | Gate driver ICs FP35R12W2T7 | IGBT modules FP15R12W1T7 | IGBT modules TLE9351SJ | Automotive CAN transceivers S25FL512SDPMFIG10 | Quad SPI Flash FS25R12W1T7 |
- Peak Output Current: 0.35 amps
- Supply Voltage: 10 to 20 volts
- Propagation Delay: 650 ns
- Features: Other
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Supplier: Infineon Technologies AG
Description: EiceDRIVER™ 1200 V half-bridge gate driver IC with typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1322S12M is based on our SOI-technology which has an excellent ruggedness and
- Peak Output Current: 2.3 amps
- Supply Voltage: -1 to 25 volts
- Propagation Delay: 500 ns
- Driver Type: Dual Gate Driver (Half-bridge)
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Supplier: Infineon Technologies AG
Description: EiceDRIVER™ 1200 V half-bridge gate driver IC with 2.3 A source, 2.3 A sink current and cross conduction prevention in the sufficient creepage, clearance distance DSO-20 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1324S12P supports Active Miller Clamp (AMC),
- Peak Output Current: 2.3 amps
- Supply Voltage: -1 to 25 volts
- Propagation Delay: 500 ns
- Driver Type: Dual Gate Driver (Half-bridge)
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Interconnection system with single phase IGBT PWM CSI between photovoltaic arrays and the utility line
The patterns are sent forward to the distributors from which they are distributed to each IGBT referring signals from the zero cross detector.
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Novel DSC-IPM for Compact Converters at Elevated Temperatures
The power devices of the IGBTs and diodes are labeled in cross reference to the schematic in Fig. 5(a).
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Dual-Side Cooled Novel IPM and Improved Capability of Inverter for Elevated-Temperature Operations
The power devices of the IGBTs and Diodes are labeled in cross - reference to the schematic in Figure 4 (a).
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Novel Dual-Side Thermal Interfacing of IPM for Elevated-Temperature Applications
The power devices of the IGBTs and Diodes are labeled in cross - reference to the schematic in Figure 4 (a).
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A novel analog method for sensorless closed-loop control of SRM without parameter estimation
zone will cross the reference value, and switch-off the IGBT of one outgoing phase unambiguously.
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A medium-voltage drive utilizing series-cell multilevel topology for outstanding power quality
A sinusoidal phase voltage reference is compared to the appropriate carrier, and the crossings cause the IGBT 's to switch, resulting in the lowest cell harmonic voltage being at 1200Hz plus and minus the fundamental.
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Evaluation of a novel analog based closed-loop sensorless controller for switched reluctance motor drive
Thus, only that particular phase current, which is switched-on in Lmin- zone, will cross the reference value (Ioref) first, and switch- off the IGBT of a pair-phase unambiguously as per Table- 1.1.
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Active damping filter for high bandwidth - Low ripple pulsed converters
One solution consists in suddenly change the state of the IGBT from the “off” to the “on” state, when the voltage crosses the reference for the first time.
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Flexible Power Transmission: The HVDC Options
As shown in the cross -section of Figure 2.26, the IGBT is achieved by adding a p+ layer; this layer is referred to as the collector of the IGBT but acts as ap emitter of a pnp bipolar transistor to the…
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Behavior analysis of the IGBT in ZCS commutation based in a soft modeling concept
…f e l OOkHz, a resonant current amplitude of 15A and an IGBT tum-off instant near the first zero- crossing of the collector current … was adjusted with the reference current ZRef variation of the instantwhen the IGBT is tumed off variation…