InGaAs Pin Photodiode

Description: module offers high reliability satisfying TELCORDIA GR-468-CORE. The LPD 3080 coaxial devices are available with either a 245 um or 900 um jacketed fiber and are available at two back reflection levels. Product Features InGaAs PIN Photodiode Low Dark Current High Responsivity

• Sensitivity: 0.85 to 0.9 A/W
• Spectral Response Range: 245 to 900 nm
• Active Area Diameter or Length: 0.07500000000000001 mm
• Operating Temperature: -40 to 85 C

Description: infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MO.

• Sensitivity: 0.95 A/W
• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 1 mm
• Operating Temperature: -40 to 75 C

Description: Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-81 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise.

• Sensitivity: 1.1 A/W
• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm

Description: FCI-InGaAs-XXM series with 4, 8, 12 and 16 channels are parts of OSI Optoelectronics' high speed IR sensitive photodetector arrays. Each AR coated element is capable of 2.5Gbps data rates exhibiting high responsivity from 1100nm to 1620nm. FCI-InGaAs-XXM, which comes standard on a

• Sensitivity: 0.5 A/W
• Spectral Response Range: 400 to 1,000 nm
• Operating Temperature: -20 to 70 C
• Photodiode Spectral Response: IR

Description: FCI-H155/622M-InGaAs-70 series are high-speed 70µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and

• Sensitivity: 0.95 A/W
• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 0.12000000000000001 mm
• Rise Time: 0.2 ns

Description: I 2 C-compatible InGaAs photodiodes

• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 0.30000000000000004 mm
• Active Area Height: 0.30000000000000004 mm
• Photodiode Material: Indium Gallium Arsenide

Description: PIN Photodiode with integrated Temperature Sensor

• Spectral Response Range: 740 to 1,100 nm
• Active Area Diameter or Length: 0.56 mm
• Active Area Height: 0.56 mm
• Photodiode Spectral Response: IR

Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100 nm Hermetic sealed in

• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
• Photodiode Spectral Response: IR, Visible
• Photodiode Package: Leaded, Through Hole Technology (THT)

Description: SMT PIN Photodiode in SMR Package, Radiant Sensitive Area 1 x 1 mm²

• Spectral Response Range: 750 to 1,100 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Photodiode Spectral Response: IR

Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options

• Spectral Response Range: 600 to 1,700 nm
• Active Area Diameter or Length: 1 mm
• Rise Time: 15 ns
• Dark Current: 1 to 10 nA

Description: Quadrant photodiodes are discrete components that usually feature four optically active areas separated by a small gap. These photodiodes are used in many applications for detecting the position of laser beams, collimators and other applications to facilitate adjustment. Features:

• Spectral Response Range: 1,064 nm
• Active Area Diameter or Length: 5.300000000000001 mm
• Rise Time: 12 ns
• Dark Current: 1.5 nA

Description: Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech manufactured InP

• Active Area Diameter or Length: 0.10000000000000002 mm
• Photodiode Material: Indium Gallium Arsenide
• Features: Other
• Photodiode Type: PIN Photodiode

Description: InGaAs PIN photodiode

• Features: Other
• Photodiode Type: PIN Photodiode

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Spectral Response Range: 900 nm
• Photodiode Type: PIN Photodiode

Description: The F-PD-23-A-FCA is a highly linear, 23 GHz bandwidth InGaAs PIN photodetector that is ideal for use in O/E front-ends requiring wideband frequency response. The coplanar waveguide photodiode design optimizes speed and sensitivity for the 1260 nm through 1610 nm wavelength

• Bandwidth: 21,000 MHz
• Operating Temperature: -49 to 167 F
• Features: Other
• Receiver Type: PIN

Description: The F-PD-23-D-FCA is a highly linear, 23 GHz bandwidth InGaAs PIN photodetector that is ideal for use in O/E front-ends requiring wideband frequency response. The coplanar waveguide photodiode design optimizes speed and sensitivity for the 1260 nm through 1610 nm wavelength

• Bandwidth: 21,000 MHz
• Features: Other
• Receiver Type: PIN

Description: The F-PD-30-D-K-FCA is a highly linear, 30 GHz bandwidth InGaAs PIN photodetector that is ideal for use in O/E front-ends requiring wideband frequency response. The coplanar waveguide photodiode design optimizes speed and sensitivity for the 1260 nm through 1610 nm wavelength

• Bandwidth: 28,000 to 30,000 MHz
• Features: Other
• Receiver Type: PIN

Description: The 818-BB-35 High Speed InGaAs Detector consists of a free-space 830 to 1650 nm Battery Biased InGaAs photodetector with a 0.032 mm active diameter and a <25 ps rise time. It includes a built-in bias supply consisting of two standard 3 V lithium cells (6V total bias) and a 50 ohm BNC

• Receiver Rise Time: 0.025 ns
• Bandwidth: 0 to 15,000 MHz
• Features: Other
• Receiver Type: PIN

Description: Silicon PN Photodiode, TO-5 Package, 9 μA (Typ.) Short Circuit Current, -0.05 %⁄K (Typ.) Temperature Coefficient High sensitivity Low dark current High shunt resistance Excellent linearity For photodiode and photovoltaic cell operation Lead-free component BPW21R is a planar silicon PN

Description: Win Source Part Number: 1372035-VEMD8081 Category: Sensors, Transducers - Optical Sensors - Photodiodes Temperature Range - Operating: -40°C ~ 85°C Fake Threat In the Open Market: 56 pct. MSL Level: 3 (168 Hours) Mfr: Vishay Semiconductor Opto Division Package: Tape & Reel Product Status:

Description: PHOTO PIN DIODE IN LOW PROFILE 0

• Sensor Technology: Optical Linear Encoder

Description: OPTOCOUPLER DC-IN 1-CH TRANS DC-OUT 6-PIN PDIP

Description: OPTOCOUPLER DC-IN 2-CH TRANS DC-OUT 8-PIN PDIP

Description: OPTOCOUPLER AC-IN 1-CH TRANS W/BASE DC-OUT 6-PIN PDIP

Description: Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1099078-TEMD5100 Termination: SMD/SMT Mounting: SMD (SMT) Reverse Breakdown Voltage: 60 V Power Dissipation: 215 mW Peak Wavelength: 950 nm Number of Pins: 2 Wavelength: 950 nm

• Standards and Certifications: RoHS Compliant
• Package / Mounting: Surface Mount (SMD)

Description: The NR8360JP-BC is an InGaAs avalanche photodiode module in a 14-pin DIP package with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and optical test instruments,

• Sensitivity: 0.89 A/W
• Spectral Response Range: 1,310 to 1,550 nm
• Active Area Diameter or Length: 0.030000000000000002 mm
• Operating Temperature: -20 to 55 C

Description: Manufacturer: Vishay Win Source Part Number: 1023735-BPV10 Packaging: Bulk Mounting: Through Hole Diode Type: PIN Voltage - DC Reverse (Vr) (Max): 60V Viewing Angle: 40° Wavelength: 940nm Spectral Range: 790nm to 1050nm Current - Dark (Typ): 1nA Active Area: 0.79mm2 Categories: Sensors,

• Operating Temperature: -40 to 100 C

Description: Optocoupler DC-IN 1-CH Linear Photovoltaic DC-OUT 8-Pin PDIP W Tube

• Operating Temperature: -55 to 100 C
• Input: DC
• Features: Other
• Output: Photodiode

Description: Manufacturer: Hamamatsu Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1089614-S1223-01 Length: 9.1 mm Mounting: SMD (SMT) Reverse Breakdown Voltage: 30 V Power Dissipation: 100 mW Height: 4.1 mm Number of Pins: 2 Wavelength: 960 nm Width: 9.1 mm

• Features: Other
• Standards and Certifications: RoHS Compliant
• Package / Mounting: Surface Mount (SMD)

Description: The AFBR-2310Z is a compact, high performance, cost effective receiver for multi GHz analog communication over single mode optical fiber. The receiver incorporates a wide bandwidth, low dark current InGaAs/InP PIN photodiode packaged inside a TO-header, together with a high

• Operating Temperature: -40 to 185 F
• Connector Type: FC
• Photodiode Semiconductor: InGaAs (900nm to 1700nm)
• Receiver Type: PIN

Description: Si and InGaAs Photodiodes Wavelength Range from 320 to 1700 nm Bandwidth from 10 kHz up to 2 GHz Max. Conversion Gain 4.8 x 103 V/W Min. NEP approx. 14 pW/√Hz Applications: Spectroscopy Fast Pulse and Transient Measurements Optical Triggering Optical Front-End for Oscilloscopes and A/D

• Spectral Response: 320 to 1,700 nm
• Module Type: PIN Photodiode

Description: The 61063 is a Silicon Photodiode in a package designed to be mounted in a double-clad printed circuit board. It is lensed for minimum response to stray light. Fast operating speed makes this device the best option in applications where speed considerations predominate. Available custom

• Sensitivity: 100 A/W
• Spectral Response Range: 290 to 1,200 nm
• Rise Time: 300 ns
• Operating Temperature: -55 to 125 C