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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series: OptiMOS™ Package: Tape & Reel (TR) Vgs (Max): ±20V Operating Temperature: -55°C ~ 175°C
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Wolfspeed, Inc. Category: Discrete Semiconductor Products Transistors FETs, MOSFETs RF FETs, MOSFETs Series: GaN Package: Tray Product Status: Active Technology: HEMT Frequency: 2.9GHz ~ 3.5GHz Voltage -
- Operating Frequency: 2,900 to 3,500 MHz
- Features: MOSFET, MOSFET RF Transistors
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Diodes Incorporated Category: Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays Package: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount
- Features: MOSFET
- Package Type: SOT3
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Supplier: Microchip Technology, Inc.
Description: reference N-Channel MOSFET. The high-side driver is designed to drive a floating N-Channel MOSFET. since the N-Channel is floating, this output needs to be able to handle the high voltages required to fully turn on the high-side MOSFET. An external bootstrap capacitor is
- Features: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 750091-TK56E12N1 Family Name: 41129 Manufacturer Homepage: www.semicon.toshiba.co.jp/eng Reference case: TO-220 Reference Date Code: 15+ Alternative Parts (Cross-Reference): IPP048N12N3GXKSA1;
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Supplier: Allied Electronics, Inc.
Description: down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
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Supplier: Allied Electronics, Inc.
Description: pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts.
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Supplier: Infineon Technologies AG
Description: switcher OPTIGA TRUST M SLS32AIA | OPTIGA™ Trust BSC065N06LS5 | N-Channel Power MOSFET BSC039N06NS | N-Channel Power MOSFET BSC110N15NS5 | N-Channel Power MOSFET ITS5215L | PROFET™ Industrial | Smart high-side switch TLF51801ELV | OPTIREG™ switcher ITS4090Q-EP-D | PROFET™
- Peak Output Current: 0.29 amps
- Supply Voltage: 10 to 20 volts
- Propagation Delay: 150 ns
- Driver Type: High-side Gate Driver, Low-side Gate Driver
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Supplier: Richardson RFPD
Description: 22kW Bi-directional High Efficiency Active Front End (AFE) Converter Download Reference Design Files DOCUMENTATION ONLY – NO HARDWARE This reference design demonstrates the application of Wolfspeed’s 1200V C3M SiC MOSFETs to create a 22kW three phase bidirectional active front
- Category: Development Board
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Supplier: Microchip Technology, Inc.
Description: drive larger MOSFETs, and rail-to-rail output capability increases efficiency, especially at lower supply voltages. The MIC38C4x also features a trimmed oscillator discharge current and bandgap reference. MIC38C4x denotes 8-pin plastic DIP, SOIC, and MM8® packages. MIC38C4x-1 denotes
- Input Voltage (VIN): 9 to 20 volts
- Package Type: DIP / CDIP / PDIP, SOIC / SOP
- Features: Other
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An in-house developed resettable MOSFET dosimeter for radiotherapy
The MOSFETs have been cross - referenced with a 0.6 cc NE2571 Farmer-type ionization chamber under an irradiation set-up simulating TBI conditions (i.e. extended SSD of 500 cm, nominal field size 40 × 40 cm2 at isocentre, 15 MV …
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Investigation of failure mechanisms in power VDMOSFETs
ToSid, B. PeSic'and N. Stojadinovic',"HTSL and HTRB ReliabilityTesting of Power VDMOSFETs", Proc. 20thMEL'95 ConJ, NiS, 1995 (p. 285) [7] TMOS Power MOSFET - Selector Guide Cross Reference and Reliability Data, Motorola Inc., 1985 [8] H.-U. Schreiber, Solid-State Electron., 29, p …
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http://www.nxp.com/documents/line_card/75017313.pdf
Advanced cross reference list DFN* MOSFETs .
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http://www.nxp.com/documents/brochure/75017277.pdf
Internet - www.nxp.com/mosfets Only two clicks to any MOSFET product information On-line cross references Datasheets SimPort – NXP’s application simulation tool Spice models, for non-NXP simulation tools Thermal models Chemical content …
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http://www.doiserbia.nb.rs/img/doi/1451-3994/2011/1451-39941101018D.pdf
***, Discrete and Special Technology Group, TMOS Power MOSFET , Selector Guide, Cross Reference and Reliability Data, Motorola Inc., 1985 [10] McWhorter, P. J., Winokur, P. S., Simple Technique for Separating the Effects of Interface Traps and Trapped-Oxide Charge in Metal-Oxide-Semiconductor …
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Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs
[811 TMOS Power MOSFET , Selector Guide, Cross Reference and ReliabilityData, Motorola Inc., 1985.
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Nano Devices and Circuit Techniques for Low-Energy Applications and Energy Harvesting
When body-tied FinFETs were first reported, they were referred to as Omega (Ω) MOSFETs because the cross -section of the body resembles the Greek letter Ω.
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Matching MOSFET Drivers to MOSFETs
Equation 3 represents the power dissipation due to MOSFET driver cross -conduction, or what is commonly referred to as shoot-through.
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An analytical drain current model for submicrometer and deep submicrometer MOSFET's
Let us refer to the schematic cross section of n-channel MOSFET shown in Fig. 1.
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A charge-sheet analysis of short-channel enhancement-mode MOSFETs
Let us refer to the simplified cross section of a short- channel MOSFET made on a p-doped substrate shown in Fig. 1, where x represents the coordinate perpendicular to the silicon surface and y is the coordinate along the channel from …