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Supplier: Littelfuse, Inc.
Description: MOS Gated Thyristor
- Thyristor Type: Silicon Controlled Rectifier (SCR)
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Supplier: Elite Semiconductor Products, Inc.
Description: These N-Channel Junction FETs are characterized tor ultra low noise applications requiring tightly controlled and specified noise parameters at 10 Hz and 1000 Hz. Tight matching specifications make these devices ideal as the input stage for low frequency differential, instrumentation
- IC Package Type: Other
- Pin Count: 6
- TJ: 150 C
- Thyristor Type: MOS Controlled Thyristor (MCT)
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Supplier: Littelfuse, Inc.
Description: MOS-Gated Thyristors are designed for high-power pulse and capacitive discharge applications, switched on by a voltage applied at the gate terminal (MOS structure). Capable of carrying current up to 32kA for a period of 1 microsecond
- Thyristor Type: Silicon Controlled Rectifier (SCR)
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Supplier: Littelfuse, Inc.
Description: MOS-Gated Thyristors are designed for high-power pulse and capacitive discharge applications, switched on by a voltage applied at the gate terminal (MOS structure). Capable of carrying current up to 32kA for a period of 1 microsecond
- Thyristor Type: Silicon Controlled Rectifier (SCR)
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Supplier: Littelfuse, Inc.
Description: MOS-Gated Thyristors are designed for high-power pulse and capacitive discharge applications, switched on by a voltage applied at the gate terminal (MOS structure). Capable of carrying current up to 32kA for a period of 1 microsecond
- Thyristor Type: Silicon Controlled Rectifier (SCR)
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Supplier: Win Source Electronics
Description: Category: Discrete Semiconductor Products - Thyristors - SCRs - Modules Manufacturer: AMIS Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL Number of Elements: 3 Voltage - Supply, Single/Dual (±): ±12
- Thyristor Type: Silicon Controlled Rectifier (SCR)
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Supplier: Infineon Technologies AG
Description: 60 mm Thyristor/Thyristor Module with 1600 V in pressure contact technology Thyristor/Thyristor 60 mm Power Block 1600 V, 570 A module for phase control in pressure contact technology using an isolated copper base plate. Summary of Features Pressure contact
- Diode Applications: Power Diode
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: 08SG60C | CoolSiC™ Schottky Diodes IKZA50N65SS5 | IGBT discretes IKZ75N65EH5 | IGBT discretes IPZA60R016CM8 | 600 V CoolMOS™ 8 BAS70-04 | Schottky Diodes TT570N16KOF | Thyristor / Diode Modules ISO1I811T
- Diode Applications: Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 40000 mA
- IR: 0.0230 mA
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Supplier: Infineon Technologies AG
Description: package. The smaller DSO-8 package version is also available: 2ED2181S06F. Based on our SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all
- Driver Type: High-side Gate Driver, Low-side Gate Driver
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 2.5 amps
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Advanced High Voltage Power Device Concepts
V. A. K. Temple, “ MOS Controlled Thyristors ”, IEEE International Electron Devices Meeting, Abstract 10.7, pp. 282–285, 1984.
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Design aspects of MOS-controlled thyristor elements: technology, simulation, and experimental results
A device of this type is called MCT- MOS controlled thyristor , and was origi- .
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Analysis of n-channel MOS-controlled thyristors
Design aspects of MOS controlled thy- ristor elements,” in IEDM Tech.
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Power Electronics: Converters Applications and Design 3rd Edition Complete Document
User's Guide to MOS Controlled Thyristors , Harris Semiconductor, 1993.
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Trench-Gate MOS-Controlled Thyristor: An Evaluation
MOS Controlled Thyristor 2500 V, in Materials and Processes for Power Electronic Devices, Theses 5th APAM Topical Seminar, 2001, p. 36.
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Interagency Advanced Power Group meeting minutes
HIGH VOLTAGE MOS-CONTROLLED THYRISTOR STATUS Captain Chris Braun, Pulsed Power Center, ETDL, described the MOS Controlled Thyristor (MCT) as a hybrid device consisting of a vertical power thyristor, similar to an SCR, but with the addition of a high-density of …
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The IBMCT: a novel MOS-gated thyristor structure
[3] V. A. K. Temple, “ MOS controlled thyristors (MCT’s),” in IEDM Tech. Dig., Abstr.
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1997 Index
MOS controlled thyristors .
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A new lateral MOS-gated thyristor with controlling base-current
SINCE the invention of the MOS controlled thyristor [1] and MOS-GTO thyristor [2], various MOS-gated bipolar devices implementing thyristor structure such as EST [3], BRT [4] have been investigated because of a simple gate driving by using a MOS gate …
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Trends in power semiconductor devices
V. A. K. Temple, “ MOS controlled thyristors (MCT’s),” IEEE Int.