Blue Enhanced Silicon Photodiodes

Description: The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular

• Sensitivity: 0.5 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 11.3 mm
• Rise Time: 45,000 ns

Description: PIN photodiodes with enhanced sensitivity in blue and green spectral range. Features: Low capacitance Very low dark current Long-term stability of detection properties

• Spectral Response Range: 400 to 650 nm
• Active Area Diameter or Length: 3.5000000000000004 mm
• Rise Time: 50 ns
• Dark Current: 0.25 nA

Description: SFH 2201 - Silicon PIN Photodiode with Enhanced Blue Sensitivity

• Photodiode Type: PIN Photodiode

Description: The UDT-4X4D is a 4 by 4 array of super blue enhanced Photodetectors. Our proprietary design provides virtually complete isolation between all of the 16 elements. The standard LCC package allows easy integration into your surface mount applications. Numerous applications include Ratio

• Sensitivity: 0.4 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm

Description: The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular

• Sensitivity: 0.6 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 2.54 mm
• Rise Time: 60 ns

Description: spectrum (150 nm - 550 nm) Optimized for UV range. Standard photovoltaic silicon photodiodes: Have a spectral sensitivity in the 400nm to 1100nm range for applications such as Spectroscopy Equipment and sensing requiring broadband sensitivity with enhancements in the blue/green

• Active Area Diameter or Length: 0.10000000000000002 mm
• Photodiode Material: Indium Gallium Arsenide
• Features: Other
• Photodiode Type: PIN Photodiode

Description: Vishay Silicon PIN Photodiode VEMD4010X0

• Spectral Response Range: 550 nm
• Features: Other
• Photodiode Type: PIN Photodiode
• Photodiode Material: Silicon

Description: A scintillator can be mounted directly on the chip. The S12497 is a Si photodiode suitable for non-destructive inspection of baggage and the like and general industrial measurement. As it is a back-illuminated photodiode, photosensitive area does not have wires, and therefore a

• Sensitivity: 0.57 A/W
• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 9.5 mm
• Active Area Height: 9.5 mm

Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes

• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
• Photodiode Spectral Response: IR, Visible
• Photodiode Package: Leaded, Through Hole Technology (THT)

Description: Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 2.5 mm) The S12362-421 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. The back-illuminated photodiode array is also simple

• Rise Time: 6,500 ns
• Dark Current: 0.05 nA
• Array: Array
• Photodiode Material: Silicon

Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100 nm Hermetic sealed in TO-8

• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
• Photodiode Spectral Response: IR, Visible
• Photodiode Package: Leaded, Through Hole Technology (THT)

Description: Wavelength-sensitive photodiodes utilize the effect of the wavelength-specific absorption depth of radiation in silicon. For this purpose, two p-n junctions are aligned vertically in the silicon crystal, thus enabling separate signal detection within vertically adjacent ranges.

• Spectral Response Range: 450 to 950 nm
• Rise Time: 10,000 ns
• Dark Current: 0.015 to 0.1 nA
• Features: Other

Description: Double diffused silicon diode, extruded aluminum housing

• Spectral Response Range: 400 to 1,170 nm
• Active Area Diameter or Length: 152.39991770404444 mm
• Rise Time: 500 ns
• Dark Current: 12,000 nA

Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage

• Sensitivity: 100 A/W
• Spectral Response Range: 290 to 1,200 nm
• Operating Temperature: -55 to 125 C
• Dark Current: 25 nA

Description: Recommended for measurement of low energies and high repetition rates

• Spectral Response Range: 200 to 1,100 nm
• Active Area Diameter or Length: 10.000000000000002 mm
• Photodiode Spectral Response: IR, UV, Visible
• Photodiode Material: Silicon

Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or digital pulse

• Photodiode Type: PIN Photodiode
• Photodiode Material: Silicon
• Photodiode Spectral Response: X-ray

Description: 3 compact Silicon Junctions on a single Die PR5020 and PR50221 are triple silicon photodiodes with three separate cathodes and one common anode. Therefore, the three segments allow to resolve two transitions. With a wider and thinner photodiode in the center of the die,

• Sensitivity: 0.58 A/W
• Operating Temperature: -40 to 85 C
• Dark Current: 0.052 nA
• Photodiode Spectral Response: IR, Visible

Description: No Description Provided

• Spectral Response Range: 350 to 800 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Rise Time: 1.8 ns

Description: Photodiodes

• Active Area Diameter or Length: 3.174998285500926 mm
• Active Area Height: 3.174998285500926 mm
• Dark Current: 10 nA
• Photodiode Package: Leaded

Description: No Description Provided

• Active Area Diameter or Length: 3 mm
• Active Area Height: 2.2 mm
• Rise Time: 6 ns
• Photodiode Spectral Response: IR

Description: No Description Provided

• Active Area Diameter or Length: 4.800000000000001 mm
• Active Area Height: 6.6000000000000005 mm
• Rise Time: 50 ns
• Photodiode Spectral Response: IR

Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially low bias

• Spectral Response Range: 650 to 850 nm
• Active Area Diameter or Length: 0.5 mm
• Rise Time: 0.35 ns
• Dark Current: 0.5 to 1 nA

Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair.

• Spectral Response Range: 950 nm
• Operating Temperature: -40 to 85 C
• Array: Array
• Photodiode Spectral Response: IR, Visible

Description: Scanned or static beams , dynamic background response

• Spectral Response Range: 633 to 675 nm
• Active Area Diameter or Length: 10.000000000000002 mm
• Active Area Height: 10.000000000000002 mm
• Photodiode Material: Silicon

Description: No Description Provided

• Spectral Response Range: 310 to 850 nm
• Active Area Diameter or Length: 2.1 mm
• Active Area Height: 2.1 mm
• Rise Time: 0.6 ns

Description: Dual axis type, diffused junction technology

• Spectral Response Range: 400 to 1,170 nm
• Active Area Diameter or Length: 11.280000000000001 mm
• Rise Time: 2,000 ns
• Dark Current: 2,000 nA

Description: No Description Provided

• Spectral Response Range: 350 to 950 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Rise Time: 5 ns

Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range Low gain

• Spectral Response Range: 750 to 930 nm
• Active Area Diameter or Length: 1 mm
• Rise Time: 2 ns
• Dark Current: 2 to 10 nA

Description: Single Photodiode with identical Outer Dimensions PR5040 is a single silicon photodiode with rectangular shape having the same outer dimensions as the segmented types PR5001-PR5030. The photodiode has a low dark current combined with a high sensitivity. The dies are

• Photodiode Spectral Response: IR, Visible
• Photodiode Type: PN Photodiode
• Photodiode Material: Silicon
• Photodiode Package: Surface Mount Technology (SMT)

Description: Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The linearity of this

• Photodiode Type: PN Photodiode
• Photodiode Material: Silicon