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Supplier: OSI Optoelectronics
Description: The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular
- Active Area Diameter or Length: 10 mm
- Active Area Height: 20 mm
- Noise Equivalent Power (NEP): 2.90E-13 W/Hz½
- Operating Temperature: -10 to 60 C
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Supplier: OSI Optoelectronics
Description: The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular
- Active Area Diameter or Length: 2.54 mm
- Noise Equivalent Power (NEP): 5.20E-14 W/Hz½
- Operating Temperature: -10 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular
- Active Area Diameter or Length: 7.9 mm
- Active Area Height: 7.9 mm
- Dark Current: 0.0250 nA
- Noise Equivalent Power (NEP): 2.10E-13 W/Hz½
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Supplier: OSI Optoelectronics
Description: The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular
- Active Area Diameter or Length: 11.28 mm
- Noise Equivalent Power (NEP): 2.00E-13 W/Hz½
- Operating Temperature: -10 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: First Sensor AG
Description: PIN photodiodes with enhanced sensitivity in blue and green spectral range. Features: Low capacitance Very low dark current Long-term stability of detection properties
- Active Area Diameter or Length: 3.5 mm
- Dark Current: 0.2500 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: Rochester Electronics
Description: SFH 2201 - Silicon PIN Photodiode with Enhanced Blue Sensitivity
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: RS Components, Ltd.
Description: The Photovoltaic series, from OSI Optoelectronics, are planar diffused silicon photodiodes. These general purpose photodiodes are ideal for applications which require high sensitivity and moderate response speeds. Their spectral response range (350-1100nm) make the regular
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Sensitivity: 0.2000 A/W
- Spectral Response: Visible
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Supplier: RS Components, Ltd.
Description: The Photovoltaic series, from OSI Optoelectronics, are planar diffused silicon photodiodes. These general purpose photodiodes are ideal for applications which require high sensitivity and moderate response speeds. Their spectral response range (350-1100nm) make the regular
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Connectorized, Other
- Spectral Response: Visible
- Spectral Response Range: 350 to 1100 nm
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Supplier: RS Components, Ltd.
Description: The TEMD5080 series, from Vishay Semiconductors, are a family of PIN photodiodes with enhanced blue sensitivity. They are in compact SMD packages with a clear epoxy. The packages contain a chip with a sensitive area of 7.7mm². The TEMD5080 are ideal for high speed photo detector
- Photodiode Material: Silicon
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 350 to 1100 nm
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Supplier: RS Components, Ltd.
Description: The TEMD5080 series, from Vishay Semiconductors, are a family of PIN photodiodes with enhanced blue sensitivity. They are in compact SMD packages with a clear epoxy. The packages contain a chip with a sensitive area of 7.7mm². The TEMD5080 are ideal for high speed photo detector
- Photodiode Material: Silicon
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 350 to 1100 nm
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Supplier: Marktech Optoelectronics
Description: the visible spectrum (150 nm - 550 nm) Optimized for UV range. Standard photovoltaic silicon photodiodes: Have a spectral sensitivity in the 400nm to 1100nm range for applications such as Spectroscopy Equipment and sensing requiring broadband sensitivity with enhancements in the
- Active Area Diameter or Length: 0.1000 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
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Supplier: Hamamatsu Photonics
Description: High UV tolerance, photodiodes for UV monitor The S12698 series are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use resin. They exhibit low sensitivity deterioration under UV light irradiation and are
- Active Area Diameter or Length: 1.1 mm
- Active Area Height: 1.1 mm
- Dark Current: 0.0100 nA
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: Large active area Si PIN photodiodes Features - Sensitivity matching with BGO and CsI(TI) scintillators - Low capacitance - High-speed response - High stability - Good energy resolution
- Active Area Diameter or Length: 10 mm
- Active Area Height: 20 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: UV to near IR for precision photometry Features - High sensitivity in UV range - Low capacitance - High reliability
- Active Area Diameter or Length: 3.6 mm
- Active Area Height: 3.6 mm
- Dark Current: 0.0500 nA
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 1.17 mm) The S12859-422 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It is modified versions of our previous products (S11212
- Array: Yes
- Dark Current: 0.0300 nA
- Photodiode Material: Silicon
- Rise Time: 6500 ns
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Supplier: Universal Semiconductor, Inc.
Description: Linear type, diffused junction technology
- Active Area Diameter or Length: 30 mm
- Active Area Height: 4 mm
- Dark Current: 3000 nA
- Noise Equivalent Power (NEP): 3.75 W/Hz½
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Supplier: Clairex Technologies, Inc.
Description: Photodiodes
- Active Area Diameter or Length: 1.52 mm
- Active Area Height: 1.52 mm
- Dark Current: 20 nA
- Photodiode Material: Silicon
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Supplier: Electro Optical Components, Inc.
Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100
- Active Area Diameter or Length: 2.5 to 7.9 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: Quantum Devices, Inc.
Description: Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The linearity of this
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
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Supplier: PREMA Semiconductor GmbH
Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair.
- Array: Yes
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
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Supplier: Micropac Industries, Inc.
Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage
- Dark Current: 25 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: IDEA, Inc.
Description: Lead (Pb) free, black lens
- Active Area Diameter or Length: 4.8 mm
- Active Area Height: 6.6 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: Ophir-Spiricon Inc.
Description: Recommended for measurement of low energies and high repetition rates
- Active Area Diameter or Length: 10 mm
- Photodiode Material: Silicon
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 200 to 1100 nm
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: MOXTEK, Inc.
Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Spectral Response: X-ray
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Hamamatsu Photonics announces the new S16495 silicon photodiode, explicitly engineered for high-sensitivity detection at 310 nm. This latest addition to our extensive line of photonic (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics
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Research scanning polarimeter and airborne usage for remote sensing of aerosols
In the VNIR spectral region blue enhanced silicon photodiodes provide scene measurements in six spectral bands centered at 410, 470, 555, 670, 865 and 960nm.
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Line width and line shape analysis in the inductively coupled plasma by high resolution Fourier transform spectrometry
silicon photodiode ( blue enhanced .
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Handbook of Optics: Volume II - Design, Fabrication, and Testing; Sources and Detectors; Radiometry and Photometry, Third Edition > PHOTODETECTORS
Time constant for UV- and blue - enhanced silicon photodiodes as a function of detector area at zero-volts bias.
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Detecting Polarized Light At Levels Below 1 ppm.
In the apparatus of Figure 1 the PEM is followed by a polarizer- analyzer, here a type HNP'B Polaroid disk, and a flat -faced 1 cm -dia- meter, blue - enhanced silicon photodiode .
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Bringing the Sun Down to Earth
Figure 4.4 shows an end view of a small blue - enhanced silicon photodiode (Advanced Photonix part PDB-C139) in a T 1-3/4 clear epoxy housing.
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From PET detectors to PET scanners
Spectral characterization of blue - enhanced silicon photodiode .
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New approach of monitoring changes in chlorophyll a fluorescence of single guard cells and protoplasts in response to physiological stimuli
The light-sensitive area of the detector is restricted by a 0·3 mm diameter pin-hole in a thin (0·3 mm) black-anodized aluminium plate cover- ing a blue - enhanced silicon photodiode .
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http://dspace.mit.edu/bitstream/handle/1721.1/93324/10rr006_full.pdf?sequence=1
The light sensor is a PDB-216, is a blue enhanced , silicon photodiode , sixteen element linear array with a common cathode made by Advanced Photonix, Inc.
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Direction-sensitive hand-held gamma-ray spectrometer
The emission of SrI2:Eu2+ is well matched to both photo-multiplier tubes and blue - enhanced silicon photodiodes .
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A Visible And Near-Infrared Scanning Photometer For Field Measurements Of Spectral Albedo And Irradiance Under Polar Conditions*
The detectors include a low-leakage blue - enhanced silicon photo- diode (Vactec VTB 5041) for visible and near-infrared wavelengths and two lead sulfide cells (Infrared Industries) for the infrared.