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Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers DC-18GHz Ct=.10Typ. Ring Quad Series
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1351946-MPL4701-206 Category: Discrete Semiconductor Products - Diodes - RF Diodes Package: Bulk Standard Package: 100 Diode Type: PIN - Single Capacitance @ Vr, F: 0.2pF @ 10V, 1MHz Voltage - Peak Reverse (Max): 15V Power Dissipation (Max): 10 W
- Tj: -55 to 150 C
- PD: 10 to 10,000 milliwatts
- CT: 0.2 pF
- Features: Other, Single
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Supplier: Richardson RFPD
Description: The SMP1302 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes is designed for high-volume switch and attenuator applications from 10 MHz to beyond 10 GHz.
- VR: 200 volts
- Operating Frequency: 10 to 10,000 MHz
- CT: 0.3 pF
- Features: Other, Single
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Supplier: Skyworks Solutions, Inc.
Description: The SMP1330-085LF is a surface-mountable, low-capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications up to 6 GHz. Maximum resistance at 10 mA is 2 Ω and maximum capacitance at 0 V is 0.55 pF. The combination of
- Diode Applications: Limiter
- Features: Other
- Diode Type: PIN Diodes
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Supplier: Infineon Technologies AG
Description: Silicon PIN Diodes Summary of Features Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz Especially useful as antenna switch in mobile communication Very low capacitance at zero volt reverse bias at freuencies
- IF: 100 mA
- VR: 50 volts
- trr: 1,100 ns
- Features: Other, Single
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Supplier: Skyworks Solutions, Inc.
Description: The SMP1302-087LF is a surface-mountable, low-capacitance silicon PIN diode designed as a series-connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to beyond 6 GHz. Maximum resistance at 100 mA is 1.5 Ω and maximum capacitance
- Diode Type: PIN Diodes
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Supplier: Richardson RFPD
Description: systems up to and above 10 GHz.
- CDmin/CDmax: 3
- Diode Type: RF Diodes, Varactor Diodes
- Features: SOT23
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Supplier: Win Source Electronics
Description: Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 1211457-MA4PBL027 Packaging: Bulk Current - Max: 100mA Diode Type: PIN - Single Categories: Discrete Semiconductor Products Temperature Range - Operating: 175°C Manufacturer Homepage: www.macom.com Manufacturer Package: 2-SMD
- Tj: 175 C
- PD: 150 milliwatts
- CT: 30 pF
- Features: Other, Single
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Supplier: Skyworks Solutions, Inc.
Description: The SMPA1304-011LF plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diode is designed for attenuator applications from 5 MHz to beyond 2 GHz. The thick 100 μm I region of this PIN diode makes this device very attractive for use in low distortion
- Diode Type: PIN Diodes
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1128292-MADP-000907-14020P Category: Discrete Semiconductor Products>Diodes - RF Package: Tape & Reel Standard Package: 3,000 Diode Type: PIN - Single Capacitance @ Vr, F: 0.03pF @ 10V, 1MHz Voltage - Peak Reverse (Max): 45V Power Dissipation (Max): 100 mW
- Tj: 175 C
- PD: 100 milliwatts
- CT: 0.03 pF
- Features: Other, Single
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Supplier: Skyworks Solutions, Inc.
Description: The SMPA1320-079LF plastic packaged, surface mountable PIN diode is designed for use in high volume switch applications from 10 MHz to more than 10 GHz. The low current performance of this diode (0.9 Ω maximum at 10 mA and 2 Ω typical at 1 mA) makes the
- Diode Type: PIN Diodes
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You are invited to the second session of Nexperia’s Power Rectifier Webinar Series on June 14th, 10:00AM CET and 5:00PM CET, where Nexperia will explain the importance of the power rectifier in switching applications, like a DCDC converter. Nexperia will help you (read more)
Browse Diodes Datasheets for Nexperia B.V. -
The HLM-8011U is a GaAs Schottky diode signal limiter featuring high IP3 and high power handling. It delivers low insertion loss and high return loss from DC through Ka band and features a typical 1dB compression point of +10dBm. The limiter’s low +7 dBm flat leakage makes it ideal for protecting sensitive components and for applications requiring high linearity. (read more)
Browse RF Limiters Datasheets for Marki Microwave LLC -
The MMD-40120H is a MMIC mmWave doubler fabricated with GaAs Schottky diodes, operating over a 20 to 60 GHz input frequency range or a doubled output frequency range of 40 to 120 GHz. The MMD-40120H is available as a connectorized module using 1.0 mm connectors on the output or wire bondable die. (read more)
Browse RF Frequency Multipliers Datasheets for Marki Microwave LLC -
The MMD-1030LCSM is a MMIC doubler fabricated with GaAs Schottky diodes. It delivers operation over a 5 to 15GHz input frequency range or a doubled output frequency range of 10 to 30GHz. Featuring excellent conversion loss, superior isolations and harmonic suppressions across a broad bandwidth, the doubler is an ideal solution for test and measurement applications. Available as a 3x3 mm QFN. (read more)
Browse RF Frequency Multipliers Datasheets for Marki Microwave LLC -
a large electrolytic capacitor and small ceramic capacitors. The ripple noise of the output is additionally reduced with a foil capacitor on the load side of the HV module. A schottky-type diode is used as rectifier on the 12 V input and an NTC-thermistor protects the circuit against high inrush (read more)
Browse Power Supplies Datasheets for Daitron Co., Ltd.
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http://dspace.mit.edu/bitstream/handle/1721.1/78455/832709134-MIT.pdf?sequence=2
low efficiency of the halfwave rectifier at frequencies > 10 GHz regardless of diode size.
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FM over impulse radio UWB
The rise in spectral content at frequencies from 3– 10 GHz is again due to the capacitive coupling across the rectifier diode .
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http://calhoun.nps.edu/public/bitstream/handle/10945/3039/07Dec_Toh.pdf?sequence=1
The design of a 10 GHz rectifier antenna (rectenna) for MAV application using a low-pass filter, Schottky diode and quarter-wave impedance matching unit was analyzed and simulated in CST Microwave Design Studio and Agilent ADS software.
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Low-power density wireless powering for battery-less sensors
In the example for which results are given in the next section, a dual-polarized linear patch antenna at 2 GHz is integrated with a rectifier with matching circuit that includes harmonic terminations for optimizing diode efficiency [ 10 ].
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Towards Low-Power High-Efficiency RF and Microwave Energy Harvesting
[ 10 ] H. Takhedmit et al., “A 2.45- GHz dual- diode RF-to-dc rectifier for rectenna applications,” in Eur.
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An improved detector topology for a rectenna
When the value of RL is 10 k , we reach an output DC voltage of 0.51 V for the HSMS282P quad and of 0.64 V for the rectifier with diodes of separate package, at … … frequency of 2.45 GHz .
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Progress in silicon carbide semiconductor electronics technology
… 1GHz.35,36 The firstmicrowave MESFETs fabricated on high resistivity 6H-SiC substrates at- taineda measured radiofrequency gain of8.5 dB at 10 GHz and an f of … … V) 4H-SiC Schottky rectifiers whose specific on-resistances … … attainable in silicon Schottky diodes .
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Power Management System for Online Low Power RF Energy Harvesting Optimization
half-wave rectifier approach is adopted using a single high-fre- quency, zero-bias Schottky diode due to its high efficiency using commercial components at low … … W/cm to 50 W/cm range and frequencies in the 1 GHz to 10 GHz range [10].
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PCB2134-2-210B-00_fab_altera_xilinx.txt (PCB2134-2_0_16636.zip)
… CONNECTED*** C607 rc0603sp N.C.,Capacitor,CER2,0603,***NOT,CONNECTED*** C608 c0402 100nF,Capacitor,CER2,0402,X7R,16V, 10 % D201 led0603 KP1608MGC … … NXP:MEGA,Schottky,Barrier, Rectifier , Diode ,10V,3A D502 sod123f … … TRF370317IRGET,TEXAS:0.4- GHz ,to,4-GHz,Quadrature …
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Materials for electrical engineering
Such a contact has therefore the rectifier properties, it is a diode (" Schottky diode "). By this diode, Majoritatstrager determine ausschlieBlich current transport; it can be used thereby up to very high frequencies (about 10 GHzes ).