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Supplier: Qorvo
Description: The RFAM3620 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and
- Package Type: Other
- Transistor Type: MESFET, HEMT, PHEMT
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Supplier: Accuris
Description: Guidelines for GaAs MMIC PHEMT/MESFET and HBT Reliability Accelerated Life Testing
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Supplier: Qorvo
Description: Qorvo's RFPD3890 is a hybrid power doubler amplifier module. The part employs GaAs MESFET, GaAs pHEMT and GaN HEMT die, has high output capability, and is operated from 40MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and
- Amplifier Type: Power Amplifier
- Frequency Range: 40 to 1003 MHz
- Maximum Gain: 27.5 dB
- Maximum Operating Voltage: 24 volts
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Supplier: Qorvo
Description: Qorvo's RFAM3790 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linearity and
- Frequency Range: 45 to 1218 MHz
- Maximum Gain: 28.5 dB
- Maximum Operating Voltage: 12 volts
- Minimum Gain: 28.5 dB
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Supplier: Qorvo
Description: Qorvo's RFCM4363 is a Push Pull amplifier SMD module. The part employs GaAs MESFET, GaAs pHemt and GaN Hemt die and is operated from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. DC current of the
- Frequency Range: 45 to 1218 MHz
- Maximum Gain: 28 dB
- Maximum Operating Voltage: 24 volts
- Minimum Gain: 28 dB
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Description: IC RF SWITCH GAAS MESFET SPDT
- Device Type: Other
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Supplier: Richardson RFPD
Description: The MAAM-010144 is a GaAs MESFET MMIC amplifier in a lead-free TSSOP-16LD exposed paddle package. The MMIC design is configured as a pair of cascode MESFET amplifiers for broadband performance. It is designed for integration in a 75 ? push-pull, low distortion, amplifier
- Frequency Range: 50 to 1000 MHz
- Maximum Gain: 20.5 dB
- Noise Figure: 5.5 dB
- Package Type: Other
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Supplier: Richardson RFPD
Description: MACOM's MASW4060G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4060G is fabricated
- Actuator Type: SP4T, Other
- Frequency Range: 0.0 to 4000 MHz
- Insertion Loss: 1.2 dB
- Isolation (Port to Port): 30 dB
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Supplier: Richardson RFPD
Description: M/A/COM's MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4030G is
- Actuator Type: SPDT, Other
- Frequency Range: 0.0 to 4000 MHz
- Insertion Loss: 1 dB
- Isolation (Port to Port): 60 dB
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Supplier: RS Components, Ltd.
Description: A wide range of radio frequency switch circuits from Analog Devices. The range features low loss broadband, positive control transfer switches and broadband non-reflective GaAs MESFET multiway switches. Switch Configuration = Single SP4T Maximum Insertion Loss = 3.5dB Minimum
- Actuator Type: SP4T
- Insertion Loss: 3.5 dB
- Isolation (Port to Port): 30 dB
- Package Type: Surface Mount, Other
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Supplier: RS Components, Ltd.
Description: A wide range of radio frequency switch circuits from Analog Devices. The range features low loss broadband, positive control transfer switches and broadband non-reflective GaAs MESFET multiway switches. Switch Configuration = Single SP4T Maximum Insertion Loss = 2.5dB Minimum
- Actuator Type: SP4T
- Insertion Loss: 2.5 dB
- Isolation (Port to Port): 31 dB
- Package Type: Surface Mount, Other
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Supplier: Richardson RFPD
Description: , GPS equipment and automatic gain/level control circuits. The MAAVSS0006 is fabricated using a mature 1-micron GaAs MESFET process. The process features full chip passivation for increased performance and reliability.
- Attenuator Type: Variable
- Frequency Range: 0.0 to 2.5 GHz
- Input VSWR: 3 :1
- Insertion Loss: 3.6 dB
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Supplier: RS Components, Ltd.
Description: A wide range of radio frequency switch circuits from Analog Devices. The range features low loss broadband, positive control transfer switches and broadband non-reflective GaAs MESFET multiway switches. Switch Configuration = Single SP8T Maximum Insertion Loss = 3.1dB Minimum
- Actuator Type: SP8T
- Insertion Loss: 3.1 dB
- Isolation (Port to Port): 20 dB
- Package Type: Surface Mount, Other
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Supplier: RS Components, Ltd.
Description: A wide range of radio frequency switch circuits from Analog Devices. The range features low loss broadband, positive control transfer switches and broadband non-reflective GaAs MESFET multiway switches. Maximum Insertion Loss = 3.7dB Minimum Isolation = 30dB Switching Speed = 6ns
- Insertion Loss: 3.7 dB
- Isolation (Port to Port): 30 dB
- Package Type: Surface Mount, Other
- Switching Speed: 6.00E-6 ms
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Supplier: MACOM
Description: broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low
- Actuator Type: SPST
- Frequency Range: 0.0 to 50000 MHz
- Impedance: 75 ohms
- Insertion Loss: 0.1000 to 2 dB
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M540: GaAs MMIC Low Noise Amplifiers (SOIC-8 Platform)
/A-COM's 0.5-micron, low noise GaAs MESFET process and are housed in low cost, 8-lead SOIC packages. These LNAs are tested in M/A-COM's volume automated facility to achieve low production cost. The LNAs share a common "platform", a product concept explained in the first major section below, enabling
More Information Top
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Physical Limitations of Semiconductor Devices
Thermal breakdown in GaAs MESFETs .
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Microwave Circuit Design Using Linear and Nonlinear Techniques 2nd Edition Complete Document
BIP: GUMMEL – POON BIPOLAR TRANSISTOR MODEL LEVEL 3 MOSFET NOISE PARAMETERS OF GaAs MESFETs DERIVATIONS FOR UNILATERAL GAIN SECTION VECTOR REPRESENTATION OF TWO-TONE INTERMODULATION PRODUCTS PASSIVE MICROWAVE ELEMENTS .
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COMPOUND SEMICONDUCTOR ELECTRONICS, THE AGE OF MATURITY
Their calcula tions demonstrate that SiC and GaN based Field Effect Transistors may challenge GaAs MESFETs and become leading contenders for high power, high temperature operation at microwave frequencies.
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Microwave Field-Effect Transistors: Theory, design and applications
Tremendous progress has been made in the application of GaAs MESFETs in monolithic microwave integrated circuits in achieved performance, levels of inte- .
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Subject Index
GaAs MESFET MMIC image-rejection front-end for DECT.
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Semiconductor Physical Electronics
refractory gate self-aligned GaAs MESFETs fabricated by rapid thermal anneal- ing (RTA) have produced transconductance with values of gm > 550 mS/mm.
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Low-power HF Microelectronics: a unified approach
SI techniques in GaAs MESFETs and HEMTs 727 .
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Switched-Currents: an analogue technique for digital technology
21 GaAs MESFET Switched-Current Circuits 548 .
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http://dspace.mit.edu/bitstream/handle/1721.1/41788/35126953-MIT.pdf?sequence=2
5 Modeling and Cryogenic Measurement of VLSI GaAs MESFET Circuits .......
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1997 Combined Index
A 40 Gbit/s super-dynamic decision IC using 0.15-µm GaAs MESFETs ; MWSYM 97 465-468 vol.2 Murata, K., see Yoneyama, M., T-MTT Dec 97 2274-2282 Murden, F., see Gratzek, T., RFIC 97 143-146 Murray, C., see …