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Supplier: Hamamatsu Photonics
Description: Visible/near infrared MPPC MPPC is a type of device called SiPM (silicon photomultipliers). It is a new type of photon counting device that consists of multiple Geiger mode APD (avalanche photodiode) pixels. It is an opto-semiconductor with outstanding photon counting
- CT: 90 pF
- Configuration: Array
- Package Type: Other
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Supplier: Hamamatsu Photonics
Description: Visible/near infrared MPPC MPPC is a type of device called SiPM (silicon photomultipliers). It is a new type of photon counting device that consists of multiple Geiger mode APD (avalanche photodiode) pixels. It is an opto-semiconductor with outstanding photon counting
- CT: 350 pF
- Configuration: Array
- Package Type: Other
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Supplier: Hamamatsu Photonics
Description: High sensitivity, low noise MPPC for visible and near infrared region MPPC, also called SiPM (silicon photomultipliers), is a new type of photon counting device that consists of multiple Geiger mode APD (avalanche photodiode) pixels. It is an opto-semiconductor with
- CT: 350 pF
- Configuration: Array
- Package Type: Other
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Supplier: Hamamatsu Photonics
Description: High sensitivity, low noise MPPC for visible and near infrared region MPPC, also called SiPM (silicon photomultipliers), is a new type of photon counting device that consists of multiple Geiger mode APD (avalanche photodiode) pixels. It is an opto-semiconductor with
- CT: 90 pF
- Configuration: Array
- Package Type: Other
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Supplier: Electro Optical Components, Inc.
Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based devices, around
- Active Area Diameter or Length: 0.0044 mm
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon Carbide
- Photodiode Package / Mounting: Other
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.5000 to 1 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 1.5 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 0.8000 to 2 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially low bias
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.2000 to 0.5000 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: Photonique SA
Description: UV-blue solidstate photon detector/counter
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 10000 nA
- Operating Temperature: -40 to 40 C
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Supplier: MACOM
Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature stability and are designed to be
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Bare Die, Surface Mount Technology (SMT)
- Sensitivity: 0.8000 to 0.9000 A/W
- Spectral Response: IR
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter for matrix assemblies
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Dark Current: 15000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Photonique SA
Description: UV-blue solidstate photon detector/counter; Non-magnetic ceramic package
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 10000 nA
- Operating Temperature: -40 to 40 C
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Supplier: DigiKey
Description: Photodiode 420nm 110ps 8-WBGA
- Dark Current: 1900 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
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Supplier: DigiKey
Description: Photodiode 800nm 300ps 2-SMD, No Lead
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 0.1000 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: DigiKey
Description: SENSOR PHOTODIODE 420NM 4SMD
- Dark Current: 50 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
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Supplier: DigiKey
Description: Photodiode 1550nm 7ns TO-8 Style, 12 Leads
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Rise Time: 7 ns
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for
- Active Area Diameter or Length: 0.2000 mm
- Active Area Height: 230 mm
- Dark Current: 0.2000 nA
- Operating Temperature: -20 to 85 C
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Supplier: OSI Optoelectronics
Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with
- Active Area Diameter or Length: 3 mm
- Dark Current: 15 nA
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: California Eastern Laboratories - CEL
Description: InGaAs APD In Coaxial Package For Fiber Optic Communication And OTDR Applications
- Active Area Diameter or Length: 0.0800 mm
- Dark Current: 7 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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OSA | Smart three-dimensional imaging ladar using two Geiger-mode avalanche photodiodes
M. S. Oh, H. J. Kong, T. H. Kim, K. H. Hong, and B. W. Kim, âReduction of range walk error in direct detection laser radar using a Geiger mode avalanche photodiode ,â Opt. Commun. 283(2), 304â308 (2010).
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High Time Resolution Astrophysics
With further devel- opment in the near future it would be advantageous to photon imaging if a 256×256 or bigger array of geiger mode avalanche photodiodes was produced.
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Signal-to-noise ratio of Geiger-mode avalanche photodiode single-photon counting detectors
W. Kindt and K. de Langen, “Integrated readout electronics for Geiger mode avalanche photodiodes ,” in Solid-State Circuits Conf., pp. 216– 219, IEEE Operations Center, Piscataway, NJ (1998).
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Capacitive Quenching Measurement Circuit for Geiger-Mode Avalanche Photodiodes
Her research interests include avalanche photodiode, Geiger mode avalanche photodiode , and material characterization.
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http://dspace.mit.edu/openaccess-disseminate/1721.1/52684
[7] Kindt, W. J., van Zeijl, H. W., and Middelhoek, S., “Optical crosstalk in geiger mode avalanche photodiode arrays: Modeling, prevention and measurement,” Solid-State Device Research Conference (ESSDERC) 28, 192–195 (1998).
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Improvement of SNR by temporal filtering method in LADAR system using two Geiger-mode avalanche photodiodes
S. Oh, H. J. Kong, T. H. Kim, K. H. Hong, and B. W. Kim, ”Reduction of range walk error in direct detection laser radar using a Geiger mode avalanche photodiode ,” Opt.
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Single photon detection using Geiger mode CMOS avalanche photodiodes
Geiger mode Avalanche Photodiodes fabricated using complementary metal-oxide-semiconductor (CMOS) fabrication technology combine high sensitivity detectors with pixel-level auxiliary circuitry.
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Development of a solid-state photomultiplier based on an array of Geiger mode CMOS avalanche photodiodes
Geiger mode avalanche photodiodes (GPDs) are solid-state photon-counting detectors that are designed to operate above the breakdown voltage and produce a discrete output pulse for each detected photon.
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Investigating the effects of package capacitance on the frequency response of shallow junction avalanche photodiodes
This work investigates the effect package capacitance has on the frequency response of Geiger Mode Avalanche Photodiodes (GMAP) when compared to micro-stripline mounted devices.
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CMOS Geiger-mode avalanche photodiode detectors for time and intensity resolved measurements
In previous publications we have reported on the development of the CMOS photon counting Geiger mode avalanche photodiodes at RMD and the application to visible photon, X-ray, and high-energy particle detection.