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Supplier: Kayaku Advanced Materials, Inc.
Description: KMSF® 2000 is a negative‑tone, low‑temperature‑cure PPE‑copolymer photo‑dielectric designed for high‑reliability heterogeneous integration in advanced packaging. It features excellent pattern resolution, a low dielectric constant (Dk = 2.5), and a low dissipation factor (Df =
- Applications: Electronics / Microelectronics
- Thick Film Type: Resistor
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Supplier: Knowles Precision Devices
Description: High-K substrates are used for circuit miniaturization. DLI offers complete fabrication services!
- Length: 1 to 4 inch
- Width / O.D.: 1 to 4 inch
- Thickness / Wall Thickness: 0.025 inch
- Coeff. of Thermal Expansion (CTE): 0.55 to 10.1 µm/m-C
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Supplier: Morgan Advanced Materials
Description: Morgan Electro Ceramics announces the release of our new piezoceramic materials, the PZT-5K HD series, for use in medical sensors and low power medical devices. The new materials are specifically formulated with high coupling values and improved dielectric properties and
- Max Use / Curie Temperature: 150 to 365 C
- Density: 7.699013263279299 to 8.198949189466266 g/cc
- Features: Dielectric Ceramic
- Material Type: Piezoelectric Ceramic
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Supplier: Henkel Corporation - Industrial
Description: BERGQUIST SIL PAD TSP K900, The Original, Thermally Conductive, Polyimide-Based Insulator BERGQUIST® SIL PAD® TSP K900 uses a specially developed film which has high thermal conductivity, high dielectric strength and is very durable. BERGQUIST SIL PAD TSP K900 combines the
- Use Temperature: 140 to 356 F
- Thermal Conductivity: 0.9 W/m-K
- Dielectric Constant (Relative Permittivity): 0.005
- Features: Leveling / Filling Compound, Thermal / Heat Conductive
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Supplier: Newport MKS
Description: beams to pass close to the edge of a mounted optic. The 10D20BD.2 Broadband Dielectric Mirror is an extremely versatile mirror for laboratory applications and highly efficient over a broad wavelength range. This 1 inch (25.4 mm) diameter mirror is made from a 6.0 mm thick Borofloat®
- Wavelength Range: 700 to 950 nm
- Diameter/Width: 25.400000000000002 mm
- Mirror Coatings: Dielectric
- Features: Other, Other Mirror Coating, Other Mirror Material
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Supplier: Shiu Li Technology Co., Ltd
Description: AS17 is an advanced insulation material composed of a fiber composite made from porous silica, aluminum nitride, and other materials, with an extremely low thermal conductivity of 0.028 W/m·K. AS17 is notable for its ability to prevent thermal runaway, its ultra-low density, and
- Use Temperature: -76 to 2,372 F
- Thermal Conductivity: 0.028 W/m-K
- Industry: Aerospace, Automotive, Electrical Power / HV, Electronics, Laminating Adhesive / Composite Resin, Marine, Military / Government (MIL-SPEC / GG), OEM / Industrial, Photonics / Optoelectronics, Semiconductors / IC Packaging, Tooling / Mold Material
- Features: Electrical Insulation / Dielectric Material, Film / Sheet, Gap Filling Sealant / FIP Gasket, Other, Pad, Specialty / Other, Thermal Insulation / Heat Insulating
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Description: insulators for semiconductor manufacturing chambers Components for managing molten metal Wintrustek Advanced Materials is a leading ceramic materials supplier. We provide high-quality AlN ceramics at a competitive price. More Materials: Our Advanced Ceramics include:
- Thermal Conductivity: 180 to 200 W/m-K
- Dielectric Strength: 20,000,000 V/m
- Material Type: Aluminum Nitride
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Supplier: Shiu Li Technology Co., Ltd
Description: LiPOLY PR27 is a very thin high insulator with a thickness of 0.15mm. It uses Polyimide Film as the reinforcement material, which can increase the tensile strength. It has great dielectric strength and can withstand 12K voltages. It’s suitable for high power transistors,
- Applied Thickness / Gap Fill: 0.005905515 inch
- Use Temperature: -76 to 356 F
- Thermal Conductivity: 1.8 W/m-K
- Industry: Electronics
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Supplier: Shiu Li Technology Co., Ltd
Description: LiPOLY DCTP140-s is a thermal insulator uses fiberglass cloth as a reinforcement material, combined with thermal conductive silicon, giving it high thermal conduction and great compression strength. The thermal conductivity is 4.5 W/m*K, the thickness is 0.25~0.45mm. Its
- Applied Thickness / Gap Fill: 0.009842525 to 0.017716545 inch
- Use Temperature: -76 to 356 F
- Thermal Conductivity: 4.5 W/m-K
- Dielectric Strength: 4 to 6 kV/in
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Description: Advantages Of Aluminum nitride backing plate Aluminum nitride backing plate has high thermal conductivity, low expansion coefficient, high strength, high temperature resistance, chemical corrosion resistance, high resistivity, and low dielectric loss. It is an
- Thermal Conductivity: 170 W/m-K
- Coeff. of Thermal Expansion (CTE): 4 to 6 µm/m-C
- Specialty Ceramic Type: Aluminum Nitride
- Applications: Electrical / HV Parts
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Description: Advantages Of Aluminum nitride ceramic gasket Aluminum nitride ceramic gasket has high thermal conductivity, low expansion coefficient, high strength, high temperature resistance, chemical corrosion resistance, high resistivity, and low dielectric loss. It is an
- Thermal Conductivity: 170 W/m-K
- Coeff. of Thermal Expansion (CTE): 4 to 6 µm/m-C
- Specialty Ceramic Type: Aluminum Nitride
- Applications: Electrical / HV Parts
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Description: The SHEEN's SE Series one-component Thermal Gel are renowned for their distinctive characteristics, which include: ◆ Good thermal conductivity, available in options ranging from 2.0 to 10.0 W/m·K. ◆ High softness and compressibility, providing low assembly stress, ideal for delicate
- Use Temperature: -58 to 302 F
- Thermal Conductivity: 5 W/m-K
- Dielectric Strength: 0.00012700000000000027 kV/in
- Dielectric Constant (Relative Permittivity): 7
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Supplier: Shiu Li Technology Co., Ltd
Description: LiPOLY T-top99-s offers outstanding thermal conductivity at 24.0 W/m*K and extremely low thermal resistance under minimal force.T-top99-s offers excellent compression, filling small air gaps on uneven surfaces, ensuring an efficient and consistent transfer of heat.
- Applied Thickness / Gap Fill: 0.01968505 to 0.393701 inch
- Use Temperature: -76 to 302 F
- Thermal Conductivity: 24 W/m-K
- Dielectric Strength: 8 kV/in
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Description: The SHEEN's SE Series one-component Thermal Gel are renowned for their distinctive characteristics, which include: ◆ Good thermal conductivity, available in options ranging from 2.0 to 10.0 W/m·K. ◆ High softness and compressibility, providing low assembly stress, ideal for delicate
- Use Temperature: -58 to 302 F
- Thermal Conductivity: 3 W/m-K
- Dielectric Strength: 0.00012700000000000027 kV/in
- Dielectric Constant (Relative Permittivity): 5.5
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Supplier: Lumentum Operations, LLC
Description: applications. Whether for high-pulse-energy processing of materials such as ceramics, high-repetition-rate processing of materials such as sapphire or silicon, or patterning thin-film solar cells, the Q-Series lasers deliver unsurpassed performance combined with
- Wavelength Range: 354.7 nm
- Laser Power: 12,000 to 40,000 milliwatts
- Beam Area: 0.3 mm²
- Operating Voltage: 200 to 240 volts
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Supplier: Piezosystem Jena, Inc.
Description: 10 Pa up to 10 kPa. To avoid creep and hysteresis, the nanoX 400SG / 200CAP is equipped with a high resolution measurement sensor. In combination with a psj-controller, high stability, linearity, repeatability, and accuracy are achieved during closed loop operation. The compact design
- Maximum Operating Voltage: -20 to 130 volts
- Stiffness: 0.4 N/µm
- Capacitance: 10,200 nF
- Length: 52 mm
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Supplier: Master Bond, Inc.
Description: Master Bond Polymer Adhesive EP51 is a fast "5 minute" curing two component epoxy adhesive for general purpose bonding formulated to cure at room temperature with a one-to-one mix ratio by weight or volume. It readily develops a high bonding strength of more than 2000 psi at room temperature.
- Use Temperature: -452.47 to 250 F
- Industry: Aerospace, Automotive, Electrical Power / HV, Electronics, Marine, OEM / Industrial, Semiconductors / IC Packaging, Tooling / Mold Material
- Features: Anti-static / ESD Control, Die Bonding Adhesive / Compound, EMI / RFI Shielding Material, Electrical Insulating / Dielectric, Electrically Conductive, Liquid, Other, Specialty / Other, Unfilled
- Substrate Compatibility: Ceramic / Glass, Composites, Metal, Plastic, Porous Surfaces, Rubber / Elastomer
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Supplier: 3X Ceramic Parts Company Limited
Description: conductivity @ room temperature W/ m*k 18-25 26-30 Electrical Resistivity @ room temperature Ω*mm2 /m >1015 >1016 Max use temperature °C 1500 1750 Resistance to acid alkaline / high high Dielectric Constant / 9 9.6 Dielectric Strength KV/mm 8.3 8.7 Thermal Shock
- Density: 3.9199975259819313 g/cc
- Coeff. of Thermal Expansion (CTE): 7.9 to 8.5 µm/m-C
- MOR / Flexural Strength: 40,610.31502001516 to 44,961.42020073107 psi
- Compressive / Crushing Strength: 290,073.678714394 to 319,081.0465858334 psi
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Description: High electrical insulation, with dielectric strength up to 8 kV/mm. ◆ Excellent flame resistance, achieving a UL94 V-0 rating. ◆ Curing time adjustable based on temperature. ◆ Two-component structure for easy storage. ◆ Can be precisely controlled for thickness and shape using
- Use Temperature: -58 to 302 F
- Thermal Conductivity: 2 W/m-K
- Dielectric Constant (Relative Permittivity): 4
- Industry: Electronics
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Supplier: Lumentum Operations, LLC
Description: Lumentum Q-Series® lasers lead the market for high-power Q-switched diode-pumped UV and green lasers used for a wide variety of high-precision, micromachining applications. Whether for high-pulse-energy processing of materials such as ceramics, high-repetition-rate
- Wavelength Range: 355 nm
- Laser Power: 2,900 to 11,000 milliwatts
- Beam Area: 0.26 mm²
- Beam Divergence: 1.7999999999999976 to 2.000000000000007 millirad
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Supplier: Piezosystem Jena, Inc.
Description: creep and hysteresis, the nanoX 200SG / 200CAP is equipped with a high resolution measurement sensor. In combination with the psj-controller, high stability, linearity, repeatability and accuracy are achieved during closed loop operation. The compact design and the raster pin and drill
- Maximum Operating Voltage: -20 to 130 volts
- Stiffness: 1.1 N/µm
- Length: 52 mm
- Diameter or Height: 22 mm
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Supplier: 3X Ceramic Parts Company Limited
Description: reactive sintering SIC ceramic products that have high hardness , high wear and heat resistance , high thermal shock resistance , acid - base resistance , high oxident resistance , good thermal conductivity and high temperature creeo resistance . Our main silicone
- Density: 3.1999979803934133 g/cc
- Thermal Conductivity: 120 W/m-K
- MOR / Flexural Strength: 56,564.36734930683 psi
- Compressive / Crushing Strength: 261,066.3108429546 psi
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Supplier: Master Bond, Inc.
Description: properties including high thermal conductivity, excellent electrical insulation properties, good physical strength properties and a high degree of flexibility. EP37-3FLFAN has low viscosity with excellent flow characteristics making it ideal as a thermally conductive potting epoxy.
- Viscosity: 60,000 to 80,000 cP
- Use Temperature: -452.47 to 250 F
- Thermal Conductivity: 3.6056975 W/m-K
- Coeff. of Thermal Expansion (CTE): 33.333333333333336 to 36.11111111111111 µin/in-F
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Supplier: 3X Ceramic Parts Company Limited
Description: higher. With the extensive development of microelectronic devices, high thermal conductivity aluminum nitride ceramics as matrix materials or packaging materials are widely used. Aluminum Nitride, formula AlN, is a newer material in the technical ceramics family, and a
- Density: 3.3399978920356252 to 3.5999977279425903 g/cc
- Thermal Conductivity: 165 to 185 W/m-K
- Coeff. of Thermal Expansion (CTE): 3 to 4.5 µm/m-C
- MOR / Flexural Strength: 56,564.36734930683 psi
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Supplier: Saint-Gobain Tape Solutions
Description: CHR K250 is manufactured from polyimide film with high-temperature adhesive. K250 has excellent mechanical and electrical properties, plus excellent dielectric strength. Applications: Constructed to fill the requirements of high performance thermoplastic polyimide backing
- Thickness: 0.0025196850393700786 inches
- Temperature Resistance: -73 C
- Backing: Polyimide (e.g., Kapton®)
- Adhesive: Silicone
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Supplier: ASME
Description: demonstrated high performance high frequency piezo-composite ultrasound transducers. In this monograph, piezoelectric materials used for high frequency transducers is introduced first. Next, the benefits and theory of piezo composites is presented, followed by the design
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Supplier: ASME Standards and Certification
Description: demonstrated high performance high frequency piezo-composite ultrasound transducers. In this monograph, piezoelectric materials used for high frequency transducers is introduced first. Next, the benefits and theory of piezo composites is presented, followed by the design
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Supplier: SAE International
Description: This paper describes the development of a lead free, high temperature ceramic capacitor material having the base composition of (Na 0.5 Bi 0.5 ) TiO 3 . The goal is to modify this structure to create a material that has the relative permittivity of barium titanate with extended
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Supplier: 3X Ceramic Parts Company Limited
Description: advanced ceramic material. 3X Ceramic offers a wide range of material types with different property profiles that can be adjusted via a targeted matrix design. This material has very high hardness, very high stiffness, very good corrosion resistance to chemicals at
- Density: 3.5999977279425903 to 3.9399975133593905 g/cc
- Coeff. of Thermal Expansion (CTE): 8.2 to 8.4 µm/m-C
- MOR / Flexural Strength: 50,037.70957823296 to 54,968.96211637766 psi
- Compressive / Crushing Strength: 304,577.3626501137 to 377,095.7823287122 psi
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Supplier: Master Bond, Inc.
Description: EP5TC-80 is a one part, NASA low outgassing rated epoxy that achieves a thermal conductivity of 3.3-3.7 W/(m·K), while also retaining its electrical non-conductivity.
- Viscosity: 60,000 to 180,000 cP
- Use Temperature: -58 to 302 F
- Thermal Conductivity: 3.3 to 3.7 W/m-K
- Tensile Strength (Break): 1,500 to 3,000 psi
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Supplier: Thermal Wire and Cable LLC
Description: Thermal Wire and Cable offers a truly unique flexible, nonmetallic solid sheath thermocouple wire designed for extremely high-temperature applications. The cable is easy to bend and work with and is terminated with conventional tools. Designed to replace MI cable which is difficult to bend
- Temperature Range: 2,199.2 F
- Elements / Pairs: 2
- Gauge Thickness: 20 Gauge
- Thermocouple Type: K
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Supplier: Greaves Corporation
Description: MODULAR TYPE 2.9 INCH L X 1 INCH W X 2.3 INCH H SIZE COPPER/ALUMINUM CONDUCTOR MATERIAL UL APPROVAL 600 VAC VOLTAGE RATING 350 AMPERE CURRENT RATING NO COVER TYPE 90 DEG C TEMPERATURE RATING HIGH DIELECTRIC HIGH IMPACT TOUGH FIBERGLASS HOUSING MATERIAL 1 POLE(S) 14
- Voltage Rating: 600 volts
- Current Rating: 350 amps
- Operating Temperature: 90 C
- Terminal Block Type: Power Distribution Block
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Supplier: Win Source Electronics
Description: Manufacturer: Kemet Win Source Part Number: 1073799-MMC7.3105K50K37TR12 Packaging: Cut Reel Termination: Solder Pads Voltage Rating - AC: 30V Voltage Rating - DC: 50V Applications: General Purpose Height - Seated (Max): 0.185" (4.70mm) Mounting: SMD (SMT) Capacitance: 1μF Tolerance: ±10%
- Capacitance Range: 1 microF
- Capacitance Tolerance: 10 (+/- %)
- DC Rated Voltage Range (WVDC): 50 volts
- AC Rated Voltage (WVAC): 30 volts
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Supplier: 3M Advanced Materials Division
Description: 4 W/m*K through-plane. In high performance applications, 3M boron nitride cooling fillers offer a lower cost-in-use than conventional mineral- and oxide-based filled compounds. Our engineered particle geometry provides optimum processability for injection molding and extrusion, even at
- Density: 0.14999990533094124 to 0.5499996528801179 g/cc
- Specialty Ceramic Type: Boron Nitride
- Applications: Dielectric / Electrical Insulation
- Shape / Form: Fabricated / Custom Shape
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Supplier: Win Source Electronics
Description: Applications: General Capacitance: 0.22μF Tolerance: ±10% Lead Spacing: 0.295" (7.50mm) Dielectric Material: Polyphenylene Sulfide (PPS), Metallized Family Name: SMR Categories: Capacitors Dimension: 0.394" L x 0.197" W (10.00mm x 5.00mm) Height - Seated (Maximum): 0.433" (11.00mm)
- Capacitance Range: 0.22000000000000003 microF
- Capacitance Tolerance: 10 (+/- %)
- DC Rated Voltage Range (WVDC): 100 volts
- AC Rated Voltage (WVAC): 63 volts
Find Suppliers by Category Top
Featured Products Top
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newest high-performance, putty-like thermal interface material. This extremely low modulus gap filler exhibits a thermal resistance as low as 0.02°C•in2/W at 43.5 PSI with a thermal conductivity of 4.5 W/m°K. (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
compact, high-power systems. Electrical Insulation: Excellent dielectric properties for safe and reliable electronic packaging and circuitry (read more)
Browse Industrial Ceramic Materials Datasheets for Xiamen Unipretec Ceramic Technology Co., Ltd. -
Key Properties & Advantages Exceptional Thermal Conductivity: Ranges from 33–60 W/m·K (h-BN), facilitating efficient heat dissipation. Outstanding Electrical Insulation: High volume resistivity, up to 10¹? Ω·cm, (read more)
Browse Industrial Ceramic Materials Datasheets for Shenzhen Great Precision Ceramic CO., LTD. -
Fujipoly® recently released SARCON® GR100A series, its newest high-performance, thermal gap filler pad. The highly conformable, gel-like sheets exhibit a thermal resistance as low as 0.05 K-in2/W at 72.5 PSI with a thermal conductivity of 10 W/m°K. SARCON® GR100A is (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
-suited for environments with operating temperatures ranging from -40 to +150°C. When placed between high-power, heat generating components and a nearby heat sink, the silicone-based material completely fills air gaps between uneven components, board protrusions and recessed areas. This maximizes heat transfer and dissipation, thereby improving overall performance. (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
holes with high aspect ratios. Another interesting feature of silicon carbides is their relatively high thermal conductivity. Here again, the CVD material excels by achieving at least 150 W/mK, which exceeds that of common steels and cast iron. Thermal conductivity does decrease with (read more)
Browse Ultra-hard Materials Machining Datasheets for Insaco, Inc. -
High-power electronics require thermal interface materials that can reduce contact resistance without introducing excessive mechanical stress. CSF45 carbon fiber thermal pad is designed for this purpose. It combines high thermal conductivity, low thermal impedance, and strong conformability to (read more)
Browse Carbon, Graphite, and Diamond Materials Datasheets for Dongguan Sheen Electronic Technology Co., Ltd. -
. This self-adhesive thermal pad combines excellent compressibility with high dielectric strength of over 8 kV/mm, helping battery designers protect sensitive cells and nearby components in demanding high-voltage environments. Its soft (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Dongguan Sheen Electronic Technology Co., Ltd. -
operational performance. Sarcon® 30YR-c is a high-performance 0.3mm thick material that exhibits a thermal conductivity of 4.0 W/m•K and a thermal resistance of only .21° C•in2/W. This V?0 rated thin film is recommended for applications with operational (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
Today, there is no doubt that it belongs to the era of information technology. With the rapid development of microelectronics industry, aluminum nitride (AlN) ceramics have been widely used in the manufacture of VLSI. As a high thermal conductivity ceramic substrate and packaging material, Al (read more)
Browse Industrial Ceramic Materials Datasheets for 3X Ceramic Parts Company Limited
Conduct Research Top
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Dielectric Materials for Use in Radomes
Mfg. Co. presents an overview of dielectric materials, as well as a comparison of polyurethane foam with other commonly used dielectrics. In addition, dielectric properties of three series of rigid polyurethane foam at low, medium and high densities are examined in frequencies ranging from 1 - 10 GHz
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MSilica Nanoparticles Treated by Cold Atmospheric-Pressure Plasmas Improve the Dielectric Performance of Organic-Inorganic Nanocomposites
chamber geometries by. imposing a dielectrophoresis (DEP) force on the beads. In cDEP the electrodes are not in. direct contact with the fluid sample but are instead capacitively coupled to the mixing. chamber through thin dielectric barriers, which eliminates many of the problems. encountered
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
manufacturers may be ready to start pushing back. Could strontium titanate be high-k gate dielectric? LONDON -- Strontium titanate, a relatively well-known perovskite material, could be the dark horse to come through and provide a replacement high-k gate dielectric material at sub-25-nanometer
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Applied, Novellus, JSR tip future low-k plans SAN FRANCISCO -- Hoping to get an early jump in the 90- and 65-nm technology nodes, chip-equipment and material vendors are quietly showing their next-generation, low-k dielectric offerings to enable new, high-speed ICs. According to sources
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
. But this time around, it's not just uncertainty that's in the air, it's fear that's stalking the management halls of the electronics industry. Rivals scrap in dielectric flap A few years ago it would have been hard to imagine that an esoteric insulator material wrapped around semiconductor wires could
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
At Semicon Europa, Paolo Gargini, Intel Fellow and director of technology strategy, tipped the company's future - and uncertain plans - with high-k dielectrics. See compendium of stories from Semicon Europa. IDT to close Manila assembly facility, cuts 750 jobs In its second layoff in recent months
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Designing Atmospheric-Pressure Plasma Sources for Surface Engineering of Nanomaterials
and thus there. is no net force on the particle. By using the relation. Re{K(o)}, unknown dielectric properties can be determined. from particles' DEP responses [32-34]. Conversely, if. dielectric properties of a particle are known, the crossover. frequency can be calculated and exploited
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Electronic Chemicals: Semiconductors, Silicon and IC Process Chemicals
ADEKA, Air Products and ATMI are major suppliers of high k dielectric materials .
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Copper Interconnect Technology
(b) Phonon scattering: Higher K dielectric materials show polarization effect and higher optical phonon vibration, that affect electron mobility and the perfor- mance of the device.
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Physics of Semiconductor Devices
Different high K dielectric materials such as Ta2O5, Al2O3, TiO3, HfO2, ZrO2 .
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Nanoscale channel engineered double gate MOSFET for mixed signal applications using high‐k dielectric
Nanosized High k Dielectric Material for FINFET.
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Multilayered Low Temperature Cofired Ceramics (LTCC) Technology
Resistor materials and high K dielectric materials .
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2012 International Conference on Devices, Circuits and Systems (ICDCS)
Higher K dielectric material used as gate insulator results in greater band bending near the surface since it results in an increased value of C;ns which implies a larger potential drop ( 1.fIs ) in the semiconductor thereby reducing Von and…
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Design of cyanate ester/azomethine/ZrO 2 nanocomposites high‐k dielectric materials by single step sol–gel approach
The high k dielectric material has been developed via sol–gel technique based on cyanate-ester copolymerized with azome- thine.
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Semiconductor Material Report - CVD Precursor - 2013
The focus of research and development of applying new materials to high performance CMOS products such as microprocessor has changed, however, micro capacitor technology in DRAM is a prime example of the process using high k dielectric materials .
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Material and Manufacturing Technology III
With the decreasing of the size of semiconductor devices, it is necessary that high k dielectric materials replace the traditional SiO2 as the gate oxide in MOSFET.