High Speed Photodiode Arrays

Description: conversion capacitance, resulting in a full well capacity of 300ke- results in outstandingly high SNR. The smaller conversion capacitance, resulting in a full well capacity of 30ke- results in very high sensitivity, ideal for high speed scanning applications or detecting

• Pixel Size: 200 µm
• Dynamic Range: 59.44 dB
• Operating Temperature: 0 to 50 C
• Supply Voltage: 3.3 volt

Description: The FCI-GaAs-XXm is a 4 or 12 element GaAs PIN photodetector array designed for high speed fiber receiver and monitoring applications. The 70µm diameter elements are capable of 2.5Gbps data rates. AR coated and sensitive to telecommunication wavelengths, this array is a

• Sensitivity: 0.63 A/W
• Spectral Response Range: 1,100 to 1,650 nm
• Active Area Diameter or Length: 0.07 mm
• Operating Temperature: -40 to 85 C

Description: FCI-InGaAs-XXM series with 4, 8, 12 and 16 channels are parts of OSI Optoelectronics' high speed IR sensitive photodetector arrays. Each AR coated element is capable of 2.5Gbps data rates exhibiting high responsivity from 1100nm to 1620nm. FCI-InGaAs-XXM, which comes

• Sensitivity: 0.5 A/W
• Spectral Response Range: 400 to 1,000 nm
• Operating Temperature: -20 to 70 C
• Photodiode Spectral Response: IR

Description: enabling low Dark Signal Non Uniformity (DSNU). A selectable integration time and capacitor allow for fi ne tuning the conversion gain in fl ight. You can choose from High Sensitivity (HS) mode and High Dynamic Range (HDR) mode. Furthermore the high maximum line rate of 10 kHz

• Horizontal Resolution: 3 lines
• Operating Temperature: -40 to 185 F
• Vertical Resolution: 1,024 lines
• Performance: Line Scan

Description: The Nexera SR UHPLC system is built around the SPD-M30A photodiode array detector, which has several new features for unmatched performance in sensitivity and stability, linearity, spectral resolution, and peak deconvolution. This high-end system is designed to produce the best

• Analysis Method: Analytical Analysis
• Injection Method: Auto-sampler Injection
• General Features: Built in Chromatograph
• User Interface: Digital Front Panel

Description: Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech

• Active Area Diameter or Length: 0.10000000000000002 mm
• Photodiode Material: Indium Gallium Arsenide
• Features: Other
• Photodiode Type: PIN Photodiode

Description: detector consists of a high-speed photovoltaic diode array and driver circuitry to switch on/off two discrete high voltage MOSFETs. The relay turns on (contact closes) with a minimum input current of 3mA through the input LED. The relay turns off (contact opens) with an

• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: -40 to 85 C
• Input: AC, DC
• Output: Photodiode

Description: gain fluctuation relative to temperature fluctuation, so there is no need for a temperature sensor or microcontroller. It has an increased high-band cutoff frequency (300 MHz) of the transimpedance amplifier compared to previous products, realizing high-speed response. Features

• Number of Channels: 16
• Spectral Response: 400 to 1,100 nm
• Current Output Sensitivity: 0.5 A/W
• Module Type: Avalanche Photodiode

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405, 450, 505, 546, 578, 630, 670, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 405, 450, 492, 510, 546, 578, 630, 700, & 800 nm wavelengths.

• Spectral / Wavelength Range: 340 to 800 nm

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405 436, 480, 510, 546, 580, 630, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: high-sensitivity Silicon photodiode linear array. Elevate your instruments with precise, efficient measurements of 340, 405, 450, 510, 546, 578, 630, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: from four types of conversion efficiency (CE). Features - High-speed line rate: 50 klines/s max. - High-speed data rate: 20 MHz max. - Selectable from four conversion efficiency types - Built-in temperature sensor - Room temperature operation

• Applications: Industrial

Description: communication applications. The link applications include antenna remoting, time and frequency reference distribution, RF delay lines, telemetry tracking, and point-to-point RF transmission. The receiver utilizes a high speed, low distortion PIN photodiode detector that is

• Responsivity: 0.85 to 0.9 A/W
• Operating Temperature: -40 to 185 F
• Connector Type: FC, SC
• Features: Other

Description: array of communication applications. The link applications include antenna remoting, time and frequency reference distribution, RF delay lines, telemetry tracking, and point-to-point RF transmission.The receiver utilizes a high speed, low distortion PIN photodiode

• Bandwidth: 3,000 MHz
• Operating Temperature: -40 to 185 F
• Connector Type: FC, SC
• Features: Other