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Supplier: Hamamatsu Photonics
Description: Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-83 has low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise.
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 75 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-85 has low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise.
- Active Area Diameter or Length: 5 mm
- Active Area Height: 5 mm
- Dark Current: 125 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-81 has low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise.
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 5 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-82 has low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise.
- Active Area Diameter or Length: 2 mm
- Active Area Height: 2 mm
- Dark Current: 25 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: ). The detector module offers high reliability satisfying TELCORDIA GR-468-CORE. The LPD 3080 coaxial devices are available with either a 245 um or 900 um jacketed fiber and are available at two back reflection levels. Product Features InGaAs PIN Photodiode Low Dark
- Active Area Diameter or Length: 0.0750 mm
- Dark Current: 0.0500 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: First Sensor AG
Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options
- Active Area Diameter or Length: 1 mm
- Dark Current: 1 to 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
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Supplier: OSI Optoelectronics
Description: FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They come standard in a single element diode or 4 - or 8- elements array with active area of 300µm. These back illuminated InGaAs photodiode/arrays are designed to be flip chip mounted (active
- Active Area Diameter or Length: 0.3000 mm
- Dark Current: 0.0500 nA
- Operating Temperature: 0.0 to 70 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: in infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MO.
- Active Area Diameter or Length: 1 mm
- Noise Equivalent Power (NEP): 2.45E-14 W/Hz½
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: in infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MO.
- Active Area Diameter or Length: 3 mm
- Noise Equivalent Power (NEP): 4.25E-14 W/Hz½
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Marktech Optoelectronics
Description: Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech
- Active Area Diameter or Length: 0.1000 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm
- Active Area Diameter or Length: 0.0400 mm
- Active Area Height: 230 mm
- Dark Current: 0.0500 nA
- Operating Temperature: -20 to 85 C
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Supplier: DigiKey
Description: 1700NM INGAAS PHOTO DIODE 3.0 AA
- Active Area Diameter or Length: 0.3000 mm
- Dark Current: 265000 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: DigiKey
Description: MODULE OPTICAL RCVR INGAAS PIN
- PN, PIN, or Avalanche: PIN Photodiode
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Photosensor Modules - InGaAs Photoreceiver, Femtowatt, 800-1700 nm, 1 mm Diameter, 8-32 / M4 -- 2153Supplier: Newport MKS
Description: The 2153 Femtowatt InGaAs Photoreceiver is ideal when you need the ultimate in low-light-level detection in the 800 to 1700 nm range. When used with a chopper and a lock-in amplifier, these receivers can easily achieve sensitivity levels in the femtowatt range. These receivers provide amazing
- Photosensor Type: PIN Photodiode
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Supplier: ODG (Origin Data Global)
Description: INGAAS PIN, 100 UM, TO-18, BALL
- Technology: Optical Linear Encoder
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Supplier: ODG (Origin Data Global)
Description: INGAAS PIN, 100 UM, CERAMIC SUBM
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Supplier: ODG (Origin Data Global)
Description: INGAAS PIN, 0.5MM, TO-18, GLASS
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Supplier: ODG (Origin Data Global)
Description: INGAAS PIN, 350UM, TO-18 WITH FC
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Fiber Optic Receivers - Fiber-Optic Photodector, PIN PD, InGaAs, 23 GHz, AC Coupled -- F-PD-23-A-FCASupplier: Newport MKS
Description: The F-PD-23-A-FCA is a highly linear, 23 GHz bandwidth InGaAs PIN photodetector that is ideal for use in O/E front-ends requiring wideband frequency response. The coplanar waveguide photodiode design optimizes speed and sensitivity for the 1260 nm through 1610 nm wavelength
- Bandwidth: 21000 MHz
- Connector Type: Other
- Photodiode Type: PIN
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Supplier: Newport MKS
Description: The F-PD-30-D-K-FCA is a highly linear, 30 GHz bandwidth InGaAs PIN photodetector that is ideal for use in O/E front-ends requiring wideband frequency response. The coplanar waveguide photodiode design optimizes speed and sensitivity for the 1260 nm through 1610 nm wavelength
- Bandwidth: 28000 MHz
- Connector Type: Other
- Photodiode Type: PIN
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Fiber Optic Receivers - Fiber-Optic Photodector, PIN PD, InGaAs, 23 GHz, DC Coupled -- F-PD-23-D-FCASupplier: Newport MKS
Description: The F-PD-23-D-FCA is a highly linear, 23 GHz bandwidth InGaAs PIN photodetector that is ideal for use in O/E front-ends requiring wideband frequency response. The coplanar waveguide photodiode design optimizes speed and sensitivity for the 1260 nm through 1610 nm wavelength
- Bandwidth: 21000 MHz
- Connector Type: Other
- Photodiode Type: PIN
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Supplier: California Eastern Laboratories - CEL
Description: The NR8360JP-BC is an InGaAs avalanche photodiode module in a 14-pin DIP package with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and optical test instruments,
- Active Area Diameter or Length: 0.0300 mm
- Dark Current: 5 nA
- Operating Temperature: -20 to 55 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: RS Components, Ltd.
Description: The FCI-InGaAs-xxx series, from OSI Optoelectronics, are high speed InGaAs photodiodes. They are ideal for Datacom and Telecom applications. These high speed photodiodes offer low capacitance, low dark current and high responsivity, making them suitable for high bit rate
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Leaded, Other
- Sensitivity: 0.9500 A/W
- Spectral Response Range: 900 to 1700 nm
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Supplier: RS Components, Ltd.
Description: The FCI-InGaAs-xxx series, from OSI Optoelectronics, are high speed InGaAs photodiodes. They are ideal for Datacom and Telecom applications. These high speed photodiodes offer low capacitance, low dark current and high responsivity, making them suitable for high bit rate
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
- Spectral Response Range: 900 to 1700 nm
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Supplier: Electro Optical Components, Inc.
Description: Si and InGaAs Photodiodes Wavelength Range from 320 to 1700 nm Bandwidth from 10 kHz up to 2 GHz Max. Conversion Gain 4.8 x 103 V/W Min. NEP approx. 14 pW/vHz Applications: Spectroscopy Fast Pulse and Transient Measurements Optical Triggering Optical Front-End for Oscilloscopes and A/D
- Photosensor Type: PIN Photodiode
- Spectral Response: 320 to 1700 nm
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Supplier: Broadcom Inc.
Description: The AFBR-2310Z is a compact, high performance, cost effective receiver for multi GHz analog communication over single mode optical fiber. The receiver incorporates a wide bandwidth, low dark current InGaAs/InP PIN photodiode packaged inside a TO-header, together with a high performance
- Cable Type: Single Mode
- Connector Type: FC
- Operating Temperature: -40 to 185 F
- Photodiode Semiconductor: InGaAs (900nm to 1700nm)
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Supplier: MACOM
Description: -sensitivity highly-reliable PIN photodiodes and high performance low power consumption MACOM quad Trans-Impedance Amplifier (TIA). The ROSA is assembled in a hermetic-sealed package with an LC receptacle for optical input and two flex circuits for DC/RF electrical connections. The
- Amplifier Type: Transimpedance
- Connector Type: LC
- Data Rate: 28000 Mbps
- Photodiode Semiconductor: InGaAs (900nm to 1700nm)
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Supplier: RS Components, Ltd.
Description: Technologies transceiver works on a 1300nm wavelength. The transmitter part uses a 1300 nm InGaAsP LED and the receiver has InGaAs PIN photodiode together with a silicon trans impedance preamplifier IC. . RoHS Compliant. Manufactured in an ISO 9001 certified facility.
- Connector Type: LC
- Data Rate: 1.25 Gbps
- Receiver Rise Time: 0.2600 ns
- Transmitter Rise Time: 0.2600 ns
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Hamamatsu Photonics introduces its G1719X series of InGaAs PIN Photodiodes for long wavelengths. These compact, surface-mounted NIR sensors with low dark current are designed for infrared applications, including gas sensing, laser applied measurements, and remote temperature sensing (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics
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Page 37. Semiconductor parts with 300 in root number
InGaAs PIN PD MODULES InGaAs PIN PHOTODIODE WITH GI-50 MULTI-MODE PIGTAIL .
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Page 1. Semiconductor parts with 585 in root number
Reverse voltage:2V; spectral response range:0.9-1.7um; InGaAs PIN photodiode : long wavelength type.
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Page 3. Semiconductor parts with 075 in root number
InGaAs PIN Photodiode Modules .
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Page 13. Semiconductor parts with 132 in root number
InGaAs PIN PD MODULES InGaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL .
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HAMAM G9128-21 Series Datasheets. G9129-24, G9130-21, G9129-23, G91290-22, G9131-24, G9130-23, G9131-23, G9128-21, G9130-22, G9130-24, G9131-22, G9131-21, G912...
Connector type: SC; supply voltage: 20V; InGaAs PIN photodiode with preamp: mini-DIL type, 1.3/1.55um, 156, 622 Mbps/1.25, 2.5Gbps Operational temperature range from -40°C to 85°C.
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Monolithically Integrated Photodiode And Preamplifier For Wide-Band Fiber Optic Links
Abstract A monolithic integration of InGaAs PIN photodiodes and InP junction field -effect transistors has been demonstrated.
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http://eprints.hud.ac.uk/8766/1/Fghosnafinalthesis.pdf
Appendix A: Datasheet of a High speed InGaAs PIN photodiode .
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Page 1. Semiconductor parts with 879 in root number
Supply voltage:0.3-6V; InGaAs PIN photodiode with preamp: 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps.
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Page 39. Semiconductor parts with 500 in root number
InGaAs PIN PD MODULES InGaAs PIN PHOTODIODE WITH RECEPTACLE .
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Page 12. Semiconductor parts with 115 in root number
InGaAs PIN PHOTODIODES .