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Supplier: Qorvo
Description: Qorvo's CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a
- Device Type: Power Operational Amplifiers
- Operating Range: Military
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Qorvo
Description: Qorvo's TGA4516 is a high power amplifier (HPA) MMIC for Ka band applications. The part is designed using Qorvo's 0.15um power pHEMT process. The small chip size is achieved by utilizing Qorvo's 3 metal layer interconnect (3MI) design technology that allows
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier
- Frequency Range: 30000 to 40000 MHz
- Maximum Gain: 18 dB
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Supplier: Xicom Technology, Inc.
Description: The XTD-150Ka, XTD-175Ka, and XTD-250KaL series are compact self contained antenna mount power amplifiers designed for low cost installation and long life. Cooling and monitor & control systems are all self contained within the amplifier. By combining the
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Supplier: Qorvo
Description: Qorvo's TGA2575 is a wideband power amplifier fabricated on Qorvo's production-released 0.15 um power pHEMT process. Operating from 32 to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band. Fully matched
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems
- Frequency Range: 32000 to 38000 MHz
- Maximum Gain: 19 dB
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Supplier: Xicom Technology, Inc.
Description: The XTD-250Ka series are compact, self contained antenna mount power amplifiers designed for low cost installation and long life. Cooling and monitor & control systems are all self contained within the amplifier. By combining the power supply and the RF components
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Supplier: Xicom Technology, Inc.
Description: The XTD-500Ka series are compact, self contained antenna mount power amplifiers designed for low cost installation and long life. Comtech Xicom offers both a "Peak" and CW version of this product across a range of commercial frequencies between 27.5 and 30 GHz. The CW version
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Supplier: Qorvo
Description: Qorvo's CMD299 is a highly efficient GaAs MMIC low noise amplifier ideally suited for EW and communications systems where small size and low power consumption are needed. The device is optimized for 30 GHz and delivers greater than 17 dB of gain with a corresponding noise figure of 3.5
- Amplifier Type: Low Noise Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier
- Frequency Range: 18000 to 40000 MHz
- Maximum Gain: 17 dB
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Supplier: Custom MMIC
Description: The CMD293 is a wideband medium power GaAs MMIC driver amplifier ideally suited for military, space and communications systems where small size and high linearity are needed. At 30 GHz the device delivers 20 dB of gain with a corresponding output 1 dB compression point of +26 dBm and
- Amplifier Type: Other
- Frequency Range: 20000 to 45000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 20 dB
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Supplier: Custom MMIC
Description: The CMD292 is wideband GaAs MMIC distributed driver amplifier die which operates from DC to 30 GHz. The amplifier delivers 13 dB of gain with a corresponding output 1 dB compression point of +27 dBm and output IP3 of 33 dBm at 15 GHz. The CMD292 is a 50 ohm matched design which
- Amplifier Type: Other
- Frequency Range: Up to 30000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 13 dB
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Supplier: Richardson RFPD
Description: The MAAP-011341-DIE is a 1/2 W Ka-band poweramplifier in bare die form. The power amplifier has a26.5 dBm typical P1dB and a 27.5 dBm typical P3dBwith 27 dB of gain. The drain bias supply is 5.5 V.The gate voltage is adjusted to set the drain currentto 450 mA. This power
- Amplifier Type: Power Amplifier
- Frequency Range: 27000 to 31500 MHz
- Maximum Gain: 27 dB
- Noise Figure: 4.5 dB
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Supplier: DigiKey
Description: Ka Band Low Noise Amplifier, 26.
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 26500 to 40000 MHz
- Maximum Gain: 37 dB
- Maximum Operating Voltage: 15 volts
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Supplier: Custom MMIC
Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 26000 to 28000 MHz
- MMIC Technology Required: Yes
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Supplier: Richardson RFPD
Description: The MAAP-011340-DIE is a 1/4 W Ka-band amplifier. The amplifier has a 24 dBm typical P1dB and a 25 dBm typical P3dB with 24 dB of gain. The typical OIP3 is 33 dBm. The drain bias supply is 5.5 V. The gate voltage is adjusted to set the drain current to 275 mA. Die size with
- Amplifier Type: Power Amplifier
- Frequency Range: 27000 to 31500 MHz
- Maximum Gain: 24 dB
- Noise Figure: 5.9 dB
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Supplier: DigiKey
Description: F6922 KA BAND DUAL CHANNEL LNA
- Amplifier Type: Low Noise Amplifier, Power Amplifier, Bi-directional Amplifier
- Applications: SATCOM Amplifier
- Frequency Range: 17700 to 21200 MHz
- Maximum Gain: 19.5 dB
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Supplier: Richardson RFPD
Description: The CHA8362-99F is a three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency. The typical power supply is 25V/440mA (quiescent current). The amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 26500 to 31000 MHz
- Maximum Gain: 25 dB
- Package Type: Other
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Supplier: DigiKey
Description: KA-BAND GAN LINEAR POWER AMPLIFI
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 27500 to 31000 MHz
- Maximum Gain: 14 dB
- Maximum Operating Voltage: 28 volts
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Supplier: DigiKey
Description: KA-BAND GAN LINEAR POWER AMPLIFI
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 27500 to 31000 MHz
- Maximum Gain: 14 dB
- Maximum Operating Voltage: 28 volts
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Supplier: Richardson RFPD
Description: ICP2840 is a Balanced Ka Band MMIC power amplifier achieving 39dBm of saturated output power in CW operation. Fabricated using on GaN SiC technology, ICP2840 operates from 27.5 to 31 GHz with 28% PAE and 24dB small signal gain. The balanced topology provides
- Amplifier Type: Power Amplifier
- Frequency Range: 27500 to 31000 MHz
- Maximum Gain: 22 dB
- Maximum Operating Voltage: 24 volts
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Supplier: Custom MMIC
Description: The CMD217 is a 8.5 W RF / Microwave GaN MMIC power amplifier die ideally suited for Ka band communications systems where high power and high linearity are indispensable design requirements. This device delivers greater than 20 dB of gain with a corresponding
- Amplifier Type: Power Amplifier
- Frequency Range: 28000 to 32000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 20 dB
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Supplier: KRYTAR, Inc.
Description: KRYTAR has developed a line of Bias Tees offering ultra-broadband control solutions with coverage of multiple microwave bands, from 0.5 to 40 GHz. KRYTAR Bias Tees are the ideal choice for powering remote control of pre-amplifiers or low-noise amplifiers (LNAs) in
- Connector Type: SMA
- DC Current: 1500 milliamps
- DC Voltage: 50 volts
- Frequency Range: 1.5 to 26.5 GHz
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Supplier: KRYTAR, Inc.
Description: KRYTAR has developed a line of Bias Tees offering ultra-broadband control solutions with coverage of multiple microwave bands, from 0.5 to 40 GHz. KRYTAR Bias Tees are the ideal choice for powering remote control of pre-amplifiers or low-noise amplifiers (LNAs) in
- Connector Type: SMA
- DC Current: 1500 milliamps
- DC Voltage: 50 volts
- Frequency Range: 6 to 20 GHz
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Supplier: KRYTAR, Inc.
Description: KRYTAR has developed a line of Bias Tees offering ultra-broadband control solutions with coverage of multiple microwave bands, from 0.5 to 40 GHz. KRYTAR Bias Tees are the ideal choice for powering remote control of pre-amplifiers or low-noise amplifiers (LNAs) in
- Connector Type: SMA
- DC Current: 1300 milliamps
- DC Voltage: 50 volts
- Frequency Range: 0.5000 to 4 GHz
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Supplier: KRYTAR, Inc.
Description: KRYTAR has developed a line of Bias Tees offering ultra-broadband control solutions with coverage of multiple microwave bands, from 0.5 to 40 GHz. KRYTAR Bias Tees are the ideal choice for powering remote control of pre-amplifiers or low-noise amplifiers (LNAs) in
- Connector Type: SMA
- DC Current: 1500 milliamps
- DC Voltage: 50 volts
- Frequency Range: 2 to 18 GHz
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Supplier: Molex Signal Tech Industrial Ltd.
Description: through Ka Band, featuring our patented Thermopad line of products which compensate for gain variation over temperature. The Thermopad® (Patent # 5,332,981) is a totally passive, surface mountable temperature variable attenuator. It requires no bias or control voltages and does not
- Attenuation: 1 to 10 dB
- Frequency Range: 36 GHz
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The family of RF GaN-on-SiC Ka-Band amplifiers covers power levels from 33 to 44 dBm, and are available in die or QFN-package formats. These devices are fabricated on the proprietary UMS GH15 GaN process, which is optimized up to 42 GHz, delivering high power, high PAE and high linearity, and making it ideal for transmitting modulated waveforms. (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
intermodulation (PIM) performance These durable and dependable filters are recommended for 5G FR2 mmWave and Ku/Ka-band Satcom applications. *Modifications and custom versions for other 12-40 GHz applications are available upon request. (read more)
Browse RF Filters and Microwave Filters Datasheets for Richardson RFPD -
Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
High-Power, Wide-Band Performance Designed for demanding laboratory and industrial environments, the VSA-D Series delivers up to 1000 kVA output with a (read more)
Browse Shock and Vibration Testing Shakers Datasheets for ECON Technologies Co.,Ltd -
Macom's CMPA851A MMIC High Power Amplfier family (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics -
Qorvo's QPA4003 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 26.5 to 29.5 GHz, it achieves 1.25 W linear power with lower than −33 dBc intermodulation distortion products and 29 dB small signal gain. Saturated output power is greater (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
The QORVO QPC4510 is a K-Band image reject upconverter mixer with integrated x2 LO buffer amplifier and output variable gain amplifier. The QPC4510 outputs an RF frequency from 17.7 to 26.5 GHz using IF inputs from DC to 4.0 GHz and a corresponding LO frequency. It is designed using (read more)
Browse RF Frequency Converters Datasheets for Qorvo -
High output power: 18 W High PAE: 40% Linear gain: 26 dB DC bias: Vd=30 V @ IDQ=680 mA MSL 3 (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD
Conduct Research Top
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High-Efficiency, Ka-band GaN Power Amplifiers
. Biased for maximum power at 28 V, it achieved an output power of 32 W CW at 32.5 GHz with an associated PAE of 30%. This is the highest reported efficiency at this frequency for a packaged amplifier with greater than 30 W CW output power. Keywords- GaN MMIC, SSPA, power amplifier, Ka-band
More Information Top
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Ka-band compact integrated high power amplifiers for VSAT satellite communication ground terminal
This paper describes the design and performance of new compact and low cost Ka band power amplifiers .
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Ka band amplifier with output power 1 Watt for overland station satellite communications network
Presented in this paper are the results of deveopment of Ka band power amplifier with 1 Watt output power and 40 dB gain, which is designed using monolithic integral circuits (MIC).
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A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier
DarwishŒ3 developed a 4 W Ka band power amplifier for mil- limeter wave antenna application with a 1.2 mm output periph- ery.
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A study on novel broadband Ku-band spatial power divider/combiner
A Ka Band Power Amplifier Based on the Traveling Wave Power Dividing/Combining Slotted-Waveguide Circuit.” .
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A novel and simple pulsed dc bias test system for power amplifier
A Ka band power amplifier is used as a DUT for the demonstration of the pulsed Dc bias test system.
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High Efficiency Planar Frequency Multiplier at Millimetre Waves and Quasi-Optical Investigations for (Sub) Millimetre Applications
With a Ka band GOLA, a W band GOLA and a Ka band power amplifier (lOW), the active array with input and output polarizers was tested with a 38 GHz input frequency.
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The influence of HEMT nonlinear distributed modeling on transient performance of microwave circuits
Theproposed model is used in analysis and simulation of a MMlC compatible, Ka band power amplifier .
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Analog predistortion linearizer on reducing corrected amplitude overshoot
A novel dioded-based predistortion for Ka band power am- plifier .
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Effects on the linearity in Ka band of single or double-recessed PHEMT's
This tremendous need has created considerable interest in the development of Ka band power amplifiers .
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A high-power Q-band PHEMT for communication terminal applications
J.M. Schellenberg, K.L. Tan, R.W. Chan, C.H. Chen, T.S. Lin, D.C. Streit and P.H. Liu, “A 0.8 Watt, Ka Band Power Amplifier ,” -, .