Ka Band Power Amplifiers

Description: Qorvo's TGA4516 is a high power amplifier (HPA) MMIC for Ka band applications. The part is designed using Qorvo's 0.15um power pHEMT process. The small chip size is achieved by utilizing Qorvo's 3 metal layer interconnect (3MI) design technology that allows

• Frequency Range: 30,000 to 40,000 MHz
• Minimum Gain: 18 dB
• Maximum Gain: 18 dB
• Minimum Operating Voltage: 6 volts

Description: Qorvo's TGA2575 is a wideband power amplifier fabricated on Qorvo's production-released 0.15 um power pHEMT process. Operating from 32 to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band. Fully matched

• Frequency Range: 32,000 to 38,000 MHz
• Minimum Gain: 19 dB
• Maximum Gain: 19 dB
• Minimum Operating Voltage: 6 volts

Description: Qorvo's CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and

• Open-Loop Gain (A_VOL): 26 dB
• Supply Voltage (V_S): 28 volts
• Operating Range: Military
• Features: Other, Power Operational Amplifiers

Description: Qorvo's CMD299 is a highly efficient GaAs MMIC low noise amplifier ideally suited for EW and communications systems where small size and low power consumption are needed. The device is optimized for 30 GHz and delivers greater than 17 dB of gain with a corresponding noise figure of 3.5

• Frequency Range: 18,000 to 40,000 MHz
• Minimum Gain: 17 dB
• Maximum Gain: 17 dB
• Output Power( P_1dB): 8 dBm

Description: The CMD293 is a wideband medium power GaAs MMIC driver amplifier ideally suited for military, space and communications systems where small size and high linearity are needed. At 30 GHz the device delivers 20 dB of gain with a corresponding output 1 dB compression point of +26 dBm and

• Frequency Range: 20,000 to 45,000 MHz
• Minimum Gain: 20 dB
• Maximum Gain: 20 dB
• Output Power( P_1dB): 25.999999999999996 dBm

Description: The XTD-150Ka, XTD-175Ka, and XTD-250KaL series are compact self contained antenna mount power amplifiers designed for low cost installation and long life. Cooling and monitor & control systems are all self contained within the amplifier. By combining the power supply and

Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a

• Frequency Range: 26,000 to 28,000 MHz
• Minimum Gain: 26 dB
• Maximum Gain: 26 dB
• Output Power( P_1dB): 37.5 dBm

Description: The MAAP-011341-DIE is a 1/2 W Ka-band poweramplifier in bare die form. The power amplifier has a26.5 dBm typical P1dB and a 27.5 dBm typical P3dBwith 27 dB of gain. The drain bias supply is 5.5 V.The gate voltage is adjusted to set the drain currentto 450 mA. This

• Frequency Range: 27,000 to 31,500 MHz
• Maximum Gain: 27 dB
• Output Power( P_1dB): 26.5 dBm
• Noise Figure: 4.5 dB

Description: The CMD292 is wideband GaAs MMIC distributed driver amplifier die which operates from DC to 30 GHz. The amplifier delivers 13 dB of gain with a corresponding output 1 dB compression point of +27 dBm and output IP3 of 33 dBm at 15 GHz. The CMD292 is a 50 ohm matched design which

• Frequency Range: 30,000 MHz
• Minimum Gain: 13 dB
• Maximum Gain: 13 dB
• Output Power( P_1dB): 26.999999999999996 dBm

Description: ICP2840 is a Balanced Ka Band MMIC power amplifier achieving 39dBm of saturated output power in CW operation. Fabricated using on GaN SiC technology, ICP2840 operates from 27.5 to 31 GHz with 28% PAE and 24dB small signal gain. The balanced topology provides

• Frequency Range: 27,500 to 31,000 MHz
• Maximum Gain: 22 dB
• Minimum Operating Voltage: 24 volts
• Maximum Operating Voltage: 24 volts

Description: The ERZ-HPA-2600-4000-33 is a High Power Amplifier covering the full Ka band and providing an output power of 33 dBm and gain of 35 dB. The compact size and modularity makes it ideal for a wide range of applications.

Description: Ka Band Low Noise Amplifier, 26.

• Frequency Range: 26,500 to 40,000 MHz
• Minimum Gain: 37 dB
• Maximum Gain: 37 dB
• Output Power( P_1dB): 11 dBm

Description: RF Amplifier 26-28 GHz (K, Ka Band) GaN Power Amp Product overview: CMD262 from Qorvo is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing

• Features: Other
• Standards: RoHS Compliant

Description: The CMD247 is a wideband (Ka, Q, U band) GaAs MMIC low phase noise RF / Microwave amplifier (LPNA) ideally suited for military, space and communications systems. At 35 GHz the amplifier MMIC delivers 13 dB of gain, a saturated output power of +15 dBm and a noise

• Frequency Range: 30,000 to 40,000 MHz
• Minimum Gain: 13 dB
• Maximum Gain: 13 dB
• Output Power( P_1dB): 13.5 dBm

Description: F6922 KA BAND DUAL CHANNEL LNA Product overview: F6922AVRI from Renesas Electronics Corporation is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing

• Features: Other
• Standards: RoHS Compliant

Description: RF Amplifier Amplifier, PA, Ka Band,0.25W, 4mm24 AQFN Product overview: MAAP-011340-TR1000 from MACOM Technology Solutions is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for

• Features: Other
• Standards: RoHS Compliant

Description: RF Amplifier 5.5W Ka-Band GaN Power Amplifier Product overview: CMX90A705A6-R705 from CML Microcircuits is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers

• Supply Voltage (V_S): 27.5 volts
• Features: Other

Description: UMS has developed a Ka-Band packaged monolithic high power amplifier delivering 33dBm output power at -1dB compression point, associated with 23dB of linear gain from 29.5 to 30.0 GHz for an overall power supply of 6V/1.9A in saturation. The circuit is

• Category: Development Board, Development Suite / Kit
• Supported System: RF

Description: in place of a standard chip attenuator to combine level setting or buffering and temperature compensation in a single chip design. This will reduce component count, increase reliability, and lower costs. Applications include power amplifiers, mixers, MMIC amplifiers, directional

• Frequency Range: 36 GHz
• Attenuation: 1 to 10 dB

Description: also used to provide DC power, to power amplifiers mounted on the top a communications tower in close proximity to the antenna. A bias tee can also be used to combine the DC power with a AC/RF signal to provide power to other devices, connected to an antenna. The

• Frequency Range: 1.4 to 32 GHz
• DC Voltage: 50 volts
• DC Current: 1,500 milliamps
• VSWR: 1.9 :1

Description: Tees are also used to provide DC power, to power amplifiers mounted on the top a communications tower in close proximity to the antenna. A bias tee can also be used to combine the DC power with a AC/RF signal to provide power to other devices, connected to an

• Frequency Range: 10 to 40 GHz
• DC Voltage: 60 volts
• DC Current: 1,000 milliamps
• VSWR: 1.9 :1

Description: ULTRA4100400K, delivers exceptional versatility from 10.0 to 40.0 GHz (X- thru KA-Bands) with excellent phase and amplitude matching. Typical specifications include 3 dB Coupling; Amplitude Imbalance: ±0.9 dB; Phase Imbalance is ±8 degrees; Isolation is >15 dB; Maximum VSWR: 1.65; and

• Frequency Range: 10,000 to 40,000 MHz
• Insertion Loss: 1.5 dB
• VSWR: 1.7 :1
• RF Coupler Type: Uni-Directional

Description: delivers exceptional versatility from 10.0 to 40.0 GHz (X- thru KA-Bands) with excellent phase and amplitude matching. Typical specifications include 3 dB Coupling; Amplitude Imbalance: ±0.8 dB; Phase Imbalance is ±18 degrees; Isolation is >14 dB; Maximum VSWR: 1.6; and Insertion Loss

• Frequency Range: 10,000 to 40,000 MHz
• Insertion Loss: 1.5 dB
• VSWR: 1.6 :1
• RF Coupler Type: Uni-Directional