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Supplier: Qorvo
Description: Qorvo's CMD184 is a 4.5 W wideband GaN MMIC power amplifier die which operates from 0.5 to 20 GHz. The amplifier delivers greater than 13 dB of gain with a corresponding output 1 dB compression point of +34.5 dBm and a saturated output power of +36.5 dBm. The
- Open-Loop Gain (AVOL): 13 dB
- Supply Voltage (VS): -2.8 to 28 volts
- Operating Range: Military
- Features: Other, Power Operational Amplifiers
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Supplier: Custom MMIC
Description: The CMD249is a wideband GaAs MMIC power amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 12 dB of gain with a corresponding output 1 dB compression point of +29 dBm and output IP3 of 38 dBm at 10 GHz. The CMD249 is a 50 ohm matched
- Frequency Range: 20,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 13 dB
- Output Power( P1dB): 30 dBm
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Supplier: Qorvo
Description: Qorvo's CMD249 is a wideband GaAs MMIC distributed amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 12 dB of gain with a corresponding output 1 dB compression point of +29 dBm and output IP3 of 38 dBm at 10 GHz. The CMD249 is a 50 ohm matched
- Open-Loop Gain (AVOL): 13 dB
- Operating Range: Military
- Features: Other, Power Operational Amplifiers
- Standards and Certifications: RoHS Compliant
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Supplier: Qorvo
Description: Qorvo's CMD245 is a wideband GaAs MMIC low phase noise RF / Microwave amplifier (LPNA) ideally suited for C, X, Ku Band military, space and communications designs. At 10 GHz the device delivers 18 dB of gain, a saturated output power of +21 dBm, and a noise figure
- Operating Range: Military
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: Qorvo
Description: Qorvo's CMD246 is a wideband (C, X, Ku, K band) GaAs MMIC low phase noise RF / Microwave amplifier (LPNA) ideally suited for military, space, and communications systems. At 16 GHz, the amplifier delivers 17 dB of gain, a saturated output power of +18 dBm and
- Operating Range: Military
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: Wolfspeed
Description: OQPSK offset Class A/B high-gain, high-efficiency, 50-ohm MMIC Ku Band high-power amplifier
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Supplier: Custom MMIC
Description: The CMD298 is a highly efficient GaAs MMIC low noise amplifier ideally suited for EW and communications systems where small size and low power consumption are needed. The device is optimized for 21 GHz and delivers greater than 27 dB of gain with a corresponding noise figure of
- Frequency Range: 17 to 25 MHz
- Minimum Gain: 27 dB
- Maximum Gain: 27 dB
- Output Power( P1dB): 7.999999999999998 dBm
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Supplier: Custom MMIC
Description: The CMD299 is a highly efficient GaAs MMIC low noise amplifier ideally suited for EW and communications systems where small size and low power consumption are needed. The device is optimized for 30 GHz and delivers greater than 17 dB of gain with a corresponding noise figure of
- Frequency Range: 18 to 40 MHz
- Minimum Gain: 17 dB
- Maximum Gain: 17 dB
- Output Power( P1dB): 7.999999999999998 dBm
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Supplier: Custom MMIC
Description: The CMD292 is wideband GaAs MMIC distributed driver amplifier die which operates from DC to 30 GHz. The amplifier delivers 13 dB of gain with a corresponding output 1 dB compression point of +27 dBm and output IP3 of 33 dBm at 15 GHz. The CMD292 is a 50 ohm matched design which
- Frequency Range: 30,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 13 dB
- Output Power( P1dB): 26.999999999999996 dBm
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Amplifier DIE, GaN MMIC, 60W Ku BAND, 12.7-13.25 G Product overview: CMPA1C1D060D from MACOM Technology Solutions is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for
- Features: Other
- Standards: RoHS Compliant
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The family of RF GaN-on-SiC Ka-Band amplifiers covers power levels from 33 to 44 dBm, and are available in die or QFN-package formats. These devices are fabricated on the proprietary UMS GH15 GaN process, which is optimized up to 42 GHz, delivering high power, high PAE and high linearity, and making it ideal for transmitting modulated waveforms. (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
High output power: 18 W High PAE: 40% Linear gain: 26 dB DC bias: Vd=30 V @ IDQ=680 mA MSL 3 (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Macom's CMPA851A MMIC High Power Amplfier family (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA1724D is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724D targets the 17.3 – 21.2 GHz Satcom band providing 5 Watts of linear power with third-order intermodulation distortion products of 22 d (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30 W saturated output power with power-added efficiency of 45% and small signal (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1722 is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1722 targets the 17.7 – 20.2 GHz Satcom band while providing 5 Watts of linear power with third-order intermodulation distortion products (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1314 is a packaged high power MMIC amplifier, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1314 is targeted for 13.75 – 14.5 GHz Satcom band. Linear power is 20 W with 25 dBc third order intermodulation distortion products. It (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
power amplifiers in 4G/LTE and 5G base stations from antenna mismatch and load variations. ·Satellite Communications: Ensures signal integrity in both uplink and downlink systems operating within Ku- and C-band frequencies. ·Military & Radar Systems (read more)
Browse RF Isolators and RF Circulators Datasheets for 5o.com -
(S- thru Ku-Bands) with excellent phase and amplitude matching. Typical specifications include 3 dB Coupling; Amplitude Imbalance: ±0.3 dB; Phase Imbalance is ±4 degrees; Isolation is >17 dB; Maximum VSWR: 1.35; and Insertion Loss of <1.2 dB. In addition, Model ULTRA1830 (read more)
Browse RF Couplers Datasheets for KRYTAR, Inc.
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Microwave Journal: Breakthrough GaN Device for Satcom Delivers 20 W of Power
Qorvo's QPA1724 is a packaged high power MMIC amplifier, Ku-/K-Band, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1724 is targeted for 17.3 to 21.2 GHz satcom band. It provides 20 W of saturated output power with 16 dB of large signal gain while achieving 27 percent
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A Compact 6.5-W PHEMT MMIC Power Amplifier for Ku-Band Applications
[4] M. Cardullo, C. Page, D. Teeter, and A. Platrker, “High efficiency X- Ku band MMIC power amplifiers ,” in IEEE MTT-S Int. Dig., 1996, vol.
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A Fully Matched Ku-band 9W PHEMT MMIC High Power Amplifier
High efficiency X- Ku band MMIC power amplifiers ," 1996 IEEE MTT-S Int. Dig., vol.
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A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications
High efficiency X- Ku band MMIC power amplifiers , IEEE MTT-S Dig (1996), 145– 148.
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A Crank–Nicholson‐based unconditionally stable time‐domain algorithm for 2D and 3D problems
High efficiency X- Ku band MMIC power amplifiers , IEEE MTT-S Dig (1996), 145– 148.
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Analysis and elimination of parametric oscillations in monolithic power amplifiers
The proposed approach has been used here to analyze the parametric oscillations of a Ku band MMIC power amplifier , whose first version turned out to be unstable, and to eliminate these oscillations in a second version of the circuit.
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A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier
[4] M. Cardullo, C. Page, D. Teeter, and A. Platzker, “High efficiency X- Ku band MMIC power amplifiers ,” in IEEE MTT-S Int. Dig., 1996, vol.
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A 8-15 GHz, 1W HBT power MMIC with 16 dB gain and 48% peak power added efficiency
A two-stage X- Ku band MMIC power amplifier has been designed and fabricated using common-emitter GaAs heterojunction bipolar transistors (HBTs).
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A Design Procedure for High-Efficiency and Compact-Size 5–10-W MMIC Power Amplifiers in GaAs pHEMT Technology
[12] M. Cardullo, C. Page, D. Teeter, and A. Platzker, “High efficiency X- Ku band MMIC power amplifiers ,” in IEEE MTT-S Int.
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IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers
High Efficiency X- Ku Band MMIC Power Amplifiers , M. Cardullo, C. Page*, D. Teeter and A. Platzker, Raytheon Co., Adv.
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The state-of-the-art of GaAs and InP power devices and amplifiers
[49] M. Cardullo, C. Page, D. Teeter, and A. Platzker, “High efficiency X- Ku band MMIC power amplifiers ,” in Proc. MTT Symp., 1996, pp. 163–166.