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Supplier: Wolfspeed
Description: High Power RF LDMOS FET, 800 W, 48 V, 730 – 960 MHz The PTRA097058NB is a 800-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching, high gain and thermally
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Supplier: Wolfspeed
Description: High Power RF LDMOS FET, 615 W, 48 V, 730 – 960 MHz The PTRA084858NF is a 615-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching, high gain and a thermally
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Supplier: Integra Technologies, Inc.
Description: Part number ILP2731M260 is a 50 W matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of 2.70- 3.10GHz. The pallet amplifier supplies a minimum of 260 watts of peak pulse power under the conditions of 300us pulse width
- Applications: Radar Systems
- Frequency Range: 2700 to 3100 MHz
- Maximum Gain: 10.6 dB
- Maximum Operating Voltage: 32 volts
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Supplier: Integra Technologies, Inc.
Description: Part number ILMP2731M260 is a 50 W matched 2-stage high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of 2.70-3.10GHz. The pallet amplifier supplies a minimum of 260 watts of peak pulse power under the conditions of 300ìs pulse
- Applications: Radar Systems
- Frequency Range: 2700 to 3100 MHz
- Maximum Gain: 22.8 dB
- Maximum Operating Voltage: 32 volts
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Supplier: Integra Technologies, Inc.
Description: Part number ILMP3135M240 is a 50 ƒÇ matched 2- stage high power pulsed radar pallet amplifier for SBand radar systems operating over the instantaneous bandwidth of 3.10-3.50GHz. The pallet amplifier supplies a minimum of 240 watts of peak pulse power under the conditions of 300£gs
- Applications: Radar Systems
- Frequency Range: 3100 to 3500 MHz
- Maximum Gain: 21 dB
- Maximum Operating Voltage: 32 volts
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Supplier: Integra Technologies, Inc.
Description: Part number ILP3135M240 is a 50 W matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of 3.10-3.50GHz. The pallet amplifier supplies a minimum of 240 watts of peak pulse power under the conditions of 300us pulse width and
- Applications: Radar Systems
- Frequency Range: 3100 to 3500 MHz
- Maximum Gain: 9.8 dB
- Maximum Operating Voltage: 32 volts
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Supplier: Wolfspeed
Description: High Power RF LDMOS FET, 520 W, 48 V, 925 - 960 MHz The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5061 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized high power version manufactured with SMA
- Amplifier Type: Power Amplifier
- Frequency Range: 800 to 1000 MHz
- Maximum Gain: 53 dB
- Maximum Operating Voltage: 30 volts
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5058 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized high power version manufactured with SMA
- Amplifier Type: Power Amplifier
- Frequency Range: 500 to 1000 MHz
- Maximum Gain: 50 dB
- Maximum Operating Voltage: 32 volts
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5057 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized high power version manufactured with SMA
- Amplifier Type: Power Amplifier
- Frequency Range: 20 to 1000 MHz
- Maximum Gain: 49 dB
- Maximum Operating Voltage: 32 volts
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5065 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized high power version manufactured with SMA
- Amplifier Type: Power Amplifier
- Frequency Range: 20 to 520 MHz
- Maximum Gain: 51 dB
- Maximum Operating Voltage: 32 volts
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Supplier: Wolfspeed
Description: The PTMC210204MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 MHz to 2200 MHz, and dual independent outputs with 10 W of output power each. It is available in a 14-lead plastic overmold package with gull wing
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Supplier: VAST STOCK CO., LIMITED
Description: Special Purpose Amplifiers LDMOS RF Power-Amplifier Bias Controller
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Description: RF LDMOS POWER AMPLIFIER FOR CON
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Supplier: DigiKey
Description: RF Mosfet LDMOS (Dual) 28V 30mA 957.5MHz 35dB 3W 16-HSOPF
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 958 MHz
- Maximum Gain: 35 dB
- Maximum Operating Voltage: 28 volts
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Supplier: DigiKey
Description: RF Mosfet LDMOS (Dual) 28V 240mA 2.17GHz 28dB 8W 16-HSOP
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 2170 MHz
- Maximum Gain: 28 dB
- Maximum Operating Voltage: 28 volts
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Supplier: DigiKey
Description: RF Mosfet LDMOS (Dual) 28V 80mA 2.17GHz 28dB 8W 16-HSOPF
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 2170 MHz
- Maximum Gain: 28 dB
- Maximum Operating Voltage: 28 volts
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Supplier: DigiKey
Description: RF Mosfet LDMOS (Dual) 28V 2.17GHz 32.3dB 2W 16-HSOP
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 2170 MHz
- Maximum Gain: 32.3 dB
- Maximum Operating Voltage: 28 volts
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Supplier: Richardson RFPD
Description: The PTGA090304MD is a wideband, two-stage, LDMOS integrated power amplifier. Fabricated with Wolfspeed's 50 V LDMOS process, it incorporates internal matching for operation from 575 MHz to 960 MHz, and dual independent outputs of 15 W each. It is available in a 14-lead plastic
- Amplifier Type: Power Amplifier
- Frequency Range: 575 to 960 MHz
- Maximum Gain: 32 dB
- Maximum Operating Voltage: 50 volts
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Supplier: Acme Chip Technology Co., Limited
Description: AIRFAST RF LDMOS WIDEBAND INTEGR
- Frequency Range: 1800 to 2200 MHz
- Maximum Gain: 29.3 dB
- Minimum Gain: Up to 29.3 dB
- Package Type: Other
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Supplier: Richardson RFPD
Description: Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and LDMOS device to enhance ruggedness and reliability.
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Supplier: ValueTronics International, Inc.
Description: generation LDMOS Transistors provide reliable brute-power performance at frequencies up to 1000 MHz. The CMC-1000 RF power amplifiers feature heavy-duty individually shielded aluminum housings at the module level. This concept of a shielded modular design minimizes internally produced
- Frequency Range: 1000 MHz
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Supplier: Empower RF Systems
Description: Used for W-CDMA, utilizes linear LDMOS power devices, built-in EMI/RFI
- Amplifier Type: Power Amplifier
- Frequency Range: 2350 to 2400 MHz
- Maximum Gain: 46 dB
- Maximum Operating Voltage: 28 volts
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Supplier: AR RF/Microwave Instrumentation
Description: -pull LDMOS circuitry is utilized in all high power stages in the interest of lowering distortion and improving stability. The Model 10,000A225A-A is equipped with a Digital Control Panel (DCP) which provides both local and remote control of the amplifier. The DCP uses a color LCD
- Frequency Range: 0.0100 to 225 MHz
- Output Power( P1dB): 70 dBm
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Supplier: Rochester Electronics
Description: MW7IC930G - SRF LDMOS Wideband Integrated Power Amplifier
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Supplier: Richardson RFPD
Description: MIMO radios covering 3.3 GHz to 3.8 GHz. These modules combine NXP’s internal LDMOS and GaN semiconductor technologies to enable high gain and efficiency with wideband performance, delivering 31 dB gain and 46 percent efficiency over 400 MHz of instantaneous bandwidth. These NXP GaN multi
- Category: Development Board, Development Suite / Kit
- Supported System: RF
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 122318-PTFB212503FLV 2R250XTMA1 Packaging: Reel - TR Voltage Rating: 65V Frequency: 2.17GHz Current - Test: 1.85A Gain: 18.1dB Transistor Polarity: LDMOS Voltage - Test: 30V Power - Output: 55W
- Package Type: Other
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Supplier: Richardson RFPD
Description: The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.
- Package Type: Other
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Supplier: APITech
Description: The API Technologies Dual S-Band 100W T/R Module is designed to operate in active Phased Array Radar systems. It utilises a 40V supply to drive the 100W LDMOS amplifier, which operates in class AB, with local storage capacitance to supply the peak currents for 100us pulse lengths at
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Supplier: Plansee SE
Description: and Mo/Cu laminates reliably dissipate heat in electronic components and provide cooling of components such as high-power transistors, for instance IGBT modules or RF amplifiers, as well as LED chips. Our materials combine the low thermal expansion of molybdenum and tungsten with the
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available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD
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Embedded: 5G and GaN: What Embedded Designers Need To Know
As described in the previous article in this series, the power demands of sub-6GHz 5G base stations are driving a shift from LDMOS amplifiers to GaN-based solutions. The high power density, efficiency and wider frequency support make it a compelling solution for many RF applications. As any
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
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Power level-dependent dual-operating mode LDMOS power amplifier for CDMA wireless base-station applications
The amplifier structure consists of four parallelly located single-stage LDMOS amplifier array, the dual-mode input power divider, and output power combiner.
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Analysis, Design, and Evaluation of LDMOS FETs for RF Power Applications up to 6 GHz
Providing almost the same output power performance, a gain of 16.5 dB was obtained for this two-stage LDMOS amplifier with .
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Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
We have demonstrated that the square-law approximated LDMOS power amplifier yields better linearity than conven- tional class-A or class-AB single-device LDMOS amplifiers .
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2004 Index
Modeling high power RF LDMOS amplifiers ; MWSYM-04 2004 1069-1072 Vol.2 Grabherr, W., see Mayer, W., T-MTT Mar 04 993-1000 Graeni, M., see Wagner, M., MWSYM-04 2004 1769-1772 Vol.3 Grajal, J., F. Calle, J. Pedros …
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http://www.nxp.com/documents/white_paper/LDMOStechnologyforRFpoweramplifiers.pdf
Average effi- ciencies close to 50% can be achieved with three-way Doherty LDMOS amplifiers at 2 GHz in combination with high gain and low adjacent channel power ratio (ACPR) after pre-distor- tion.
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Comparative analysis of GaAs/LDMOS/GaN high power transistors in a digital predistortion amplifier system
The LDMOS amplifier was the most predistortable in the static sense and exhibited the lowest SPI.
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Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented.
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Intermodulation distortion behavior in LDMOS transistor amplifiers
Finally, measurements made on a 1.9 GHz LDMOS am- plifier are used to examine how the IMD behavior is af- fected at higher frequencies.
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Nonlinear modeling of LDMOS transistors for high‐power FM transmitters
A high efficiency 250W LDMOS amplifier for polar trans- mitter at 940MHz.
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Envelope tracking power amplifier with static predistortion linearization
This paper studies the design, properties and driving requirements of an ET transmitter built around a 0.5 W Class AB LDMOS amplifier .