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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5065 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized high power version manufactured with SMA
- Frequency Range: 20 to 520 MHz
- Maximum Gain: 51 dB
- Maximum Operating Voltage: 32 volts
- Amplifier Type: Power Amplifier
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5058 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized high power version manufactured with SMA
- Frequency Range: 500 to 1,000 MHz
- Maximum Gain: 50 dB
- Maximum Operating Voltage: 32 volts
- Amplifier Type: Power Amplifier
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5057 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized high power version manufactured with SMA
- Frequency Range: 20 to 1,000 MHz
- Maximum Gain: 49 dB
- Maximum Operating Voltage: 32 volts
- Amplifier Type: Power Amplifier
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Supplier: Wolfspeed
Description: High Power RF LDMOS FET, 615 W, 48 V, 730 – 960 MHz The PTRA084858NF is a 615-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching, high gain and a
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Supplier: Wolfspeed
Description: High Power RF LDMOS FET, 800 W, 48 V, 730 – 960 MHz The PTRA097058NB is a 800-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5061 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized high power version manufactured with SMA
- Frequency Range: 800 to 1,000 MHz
- Maximum Gain: 53 dB
- Maximum Operating Voltage: 30 volts
- Amplifier Type: Power Amplifier
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Supplier: Integra Technologies, Inc.
Description: Part number ILP3135M240 is a 50 W matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of 3.10-3.50GHz. The pallet amplifier supplies a minimum of 240 watts of peak pulse power under the conditions of 300us pulse width and
- Frequency Range: 3,100 to 3,500 MHz
- Minimum Gain: 9.8 dB
- Maximum Gain: 9.8 dB
- Output Power( P1dB): 53.979400086720375 dBm
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Supplier: Wolfspeed
Description: The PTMC210204MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 MHz to 2200 MHz, and dual independent outputs with 10 W of output power each. It is available in a 14-lead plastic overmold package with gull wing
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Supplier: Wolfspeed
Description: The PTMC210124MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 MHz to 2200 MHz, and dual independent outputs with 6 W of output power each. It is available in a 14-lead plastic overmold package with gull wing
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Supplier: Integra Technologies, Inc.
Description: Part number ILT3035M30 is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 3.0-3.5 GHz. It utilizes gold metal LDMOS transistor technology operating in common source
- Power Gain: 12.5 dB
- Operating Frequency: 3,000 to 3,500 MHz
- Output Power: 30 watts
- Features: Bipolar RF Transistors, Other
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Description: RF LDMOS POWER AMPLIFIER FOR CON
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Supplier: DigiKey
Description: RF Mosfet LDMOS (Dual) 28V 80mA 2.17GHz 28dB 8W 16-HSOPF
- Frequency Range: 2,170 MHz
- Minimum Gain: 28 dB
- Maximum Gain: 28 dB
- Minimum Operating Voltage: 28 volts
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Supplier: Richardson RFPD
Description: RF LDMOS Wideband Integrated Power Amplifier. The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage structure is rated for 24 to 32 volt operation and covers all typical cellular base station modulation
- Frequency Range: 728 to 960 MHz
- Maximum Gain: 36.2 dB
- Output Power( P1dB): 44 dBm
- Minimum Operating Voltage: 28 volts
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Supplier: Richardson RFPD
Description: The 1213 is suitable for HF broadband and specific high power linear applications. This amplifier utilizes the latest push-pull LDMOS power devices that provide high gain, wide dynamic range, low distortions, and good linearity. The amplifier utilizes a device specific for HF
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Supplier: ValueTronics International, Inc.
Description: Backlit screen Modular Design Construction Integrated Force Air Cooling Self-diagnostic circuitry IEEE-488 interface & RS232 Remote The IFI CMC-1000 is a state-of-the-art solid-state power amplifier that is specifically designed for laboratory and all testing applications. The CMC-1000 RF
- Frequency Range: 1,000 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF LDMOS POWER AMPLIFIER FOR CON Product overview: MHT2012NT1 from NXP Semiconductors is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets,
- Supply Voltage (VS): 28 volts
- Features: Other
- Standards: RoHS Compliant
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET LDMOS 28V 16-HSOPF
- Frequency Range: 1,805 to 2,170 MHz
- Minimum Gain: 26 dB
- Maximum Gain: 26 dB
- Features: Other
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Supplier: Mini-Circuits
Description: Mini-Circuits ZPUL-30P+ utilizes high power LDMOS transistor output stage. Class A operation accept any kind of modulation. The frequency range is so wide (280,000:1) that the amplifier may handle long pulses, 15µsec typ. with very short rise and fall duration 1.1 nsec. typ. Of course
- Operating Temperature: -20 to 65 C
- Nominal Impedance: 50 Ohms
- Connectors: BNC
- Package Type: Connectorized
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Supplier: Rochester Electronics
Description: Airfast RF LDMOS Wideband Integrated Power Amplifier, 2300-2690 MHz, 10.5 W AVG., 28 V
- Features: Other, Video / Wideband Amplifiers
- Standards: RoHS Compliant
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Supplier: Mini-Circuits
Description: The Mini-Circuits ZHL-100W-GAN+ utilizes high power Galium Nitride (GaN) output stage, which results in higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. GaN FET’s boast a maximum junction temperature of 250°C translating into higher operating temperatures
- Operating Temperature: -25 to 65 C
- Nominal Impedance: 50 Ohms
- Package Type: Connectorized
- Amplifier Type: Power Amplifier
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Supplier: AR RF/Microwave Instrumentation
Description: The Model 12500A225A-L is a self-contained, broadband, completely solid state amplifier designed for applications where instantaneous bandwidth and high gain are required. The amplifier is liquid-cooled for high performance and reliability (majority of the heat is removed via liquid
- Frequency Range: 0.01 to 225 MHz
- Output Power( P1dB): 70.96910013008056 dBm
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Supplier: Richardson RFPD
Description: covering 3.3 GHz to 3.8 GHz. These modules combine NXP’s internal LDMOS and GaN semiconductor technologies to enable high gain and efficiency with wideband performance, delivering 31 dB gain and 46 percent efficiency over 400 MHz of instantaneous bandwidth. These NXP GaN multi-chip evaluation
- Category: Development Board, Development Suite / Kit
- Supported System: RF
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Supplier: Richardson RFPD
Description: The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced, surface-mount package. Manufactured with advanced LDMOS process, this device
- Power Gain: 19.5 dB
- Output Power: 5.5 watts
- Operating Frequency: 500 to 1,400 MHz
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 131521-PTFB183404EV1R250XTMA1 Packaging: Cut Reel Voltage Rating: 65V Frequency: 1.88GHz Current - Test: 2.6A Gain: 17dB Transistor Polarity: LDMOS Voltage - Test: 30V Power - Output: 80W Categories: Discrete Semiconductor Products
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 062172-PTFB183404E V1 R250 Packaging: Cut Reel Voltage Rating: 65V Frequency: 1.88GHz Current - Test: 2.6A Gain: 17dB Transistor Polarity: LDMOS Voltage - Test: 30V Power - Output: 80W Categories: Discrete Semiconductor Products
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 141139-PTFB193404FV1R250XTMA1 Packaging: Reel - TR Voltage Rating: 65V Frequency: 1.99GHz Current - Test: 2.6A Gain: 19dB Transistor Polarity: LDMOS Voltage - Test: 30V Power - Output: 80W Categories: Discrete Semiconductor Products
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 145294-PTFB183404FV2R250XTMA1 Packaging: Reel - TR Voltage Rating: 65V Frequency: 1.88GHz Current - Test: 2.6A Gain: 17dB Transistor Polarity: LDMOS Voltage - Test: 30V Power - Output: 80W Categories: Discrete Semiconductor Products
- Features: Other
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Supplier: APITech
Description: The API Technologies Dual S-Band 100W T/R Module is designed to operate in active Phased Array Radar systems. It utilises a 40V supply to drive the 100W LDMOS amplifier, which operates in class AB, with local storage capacitance to supply the peak currents for 100us pulse lengths at
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF FET LDMOS 65V SOT1212 Product overview: BLM7G1822S-20PBG from Ampleon USA Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF MOSFET LDMOS 28V 16-HSOP Product overview: BLM8D1822S-50PBGY from Ampleon USA Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets,
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Evaluation Board for Wideband LDMOS Two-stage Integrated Power Amplifier Product overview: LTN/PTNC210604MD-V2 from Wolfspeed is a Development Board and Programmer for evaluation, prototyping, programming, firmware development, device testing, and engineering validation. It is useful
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Supplier: Plansee SE
Description: used . You will find our base plates and heat spreaders in components in the fields of opto-electronics, high-frequency applications, power electronics and micro-electronics. The most important applications for our materials include: Si LDMOS transistors (LDMOS = laterally diffused
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available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD
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Embedded: 5G and GaN: What Embedded Designers Need To Know
As described in the previous article in this series, the power demands of sub-6GHz 5G base stations are driving a shift from LDMOS amplifiers to GaN-based solutions. The high power density, efficiency and wider frequency support make it a compelling solution for many RF applications. As any
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
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Power level-dependent dual-operating mode LDMOS power amplifier for CDMA wireless base-station applications
The amplifier structure consists of four parallelly located single-stage LDMOS amplifier array, the dual-mode input power divider, and output power combiner.
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Analysis, Design, and Evaluation of LDMOS FETs for RF Power Applications up to 6 GHz
Providing almost the same output power performance, a gain of 16.5 dB was obtained for this two-stage LDMOS amplifier with .
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Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
We have demonstrated that the square-law approximated LDMOS power amplifier yields better linearity than conven- tional class-A or class-AB single-device LDMOS amplifiers .
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2004 Index
Modeling high power RF LDMOS amplifiers ; MWSYM-04 2004 1069-1072 Vol.2 Grabherr, W., see Mayer, W., T-MTT Mar 04 993-1000 Graeni, M., see Wagner, M., MWSYM-04 2004 1769-1772 Vol.3 Grajal, J., F. Calle, J. Pedros …
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http://www.nxp.com/documents/white_paper/LDMOStechnologyforRFpoweramplifiers.pdf
Average effi- ciencies close to 50% can be achieved with three-way Doherty LDMOS amplifiers at 2 GHz in combination with high gain and low adjacent channel power ratio (ACPR) after pre-distor- tion.
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Comparative analysis of GaAs/LDMOS/GaN high power transistors in a digital predistortion amplifier system
The LDMOS amplifier was the most predistortable in the static sense and exhibited the lowest SPI.
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Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented.
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Intermodulation distortion behavior in LDMOS transistor amplifiers
Finally, measurements made on a 1.9 GHz LDMOS am- plifier are used to examine how the IMD behavior is af- fected at higher frequencies.
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Nonlinear modeling of LDMOS transistors for high‐power FM transmitters
A high efficiency 250W LDMOS amplifier for polar trans- mitter at 940MHz.
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Envelope tracking power amplifier with static predistortion linearization
This paper studies the design, properties and driving requirements of an ET transmitter built around a 0.5 W Class AB LDMOS amplifier .