Products/Services for Mitsubishi MESFET LNA
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RF Amplifiers - (609 companies)RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.Amplifier TypeApplicationsRoHS Compliant -
Semiconductor Foundry Services - (174 companies)Semiconductor foundry services suppliers design and manufacture semiconductor chips on a contract basis, in prototype to production quantities. -
Cryogenic Equipment - (147 companies)Cryogenic equipment produces or is used in the production of very low temperature materials or processes. -
Fiber Optic Amplifiers - (124 companies)Fiber optic amplifiers re-amplify an attenuated signal without converting the signal into electrical form. -
Instrumentation Amplifiers - (148 companies)Instrumentation amplifiers are differential amplifiers that have been optimized for use with DC signals. They are characterized by high gain, high common mode rejection ratio (CMRR), and high input impedance. -
Amplifier and Comparator Chips - (551 companies)Amplifier and comparator chips are board-level components for amplifying voltage, current, or power.
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RF and Microwave Laminates - (37 companies)RF and microwave laminates are used as substrates for radio frequency (RF) and microwave communication systems and electronics. They are designed to meet the demanding performance standards for higher-frequency applications.
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Signal Amplifiers - (312 companies)Signal amplifiers accept signals from sensors and other devices and amplify them to levels suitable for further processing or digitization by computer elements.
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Audio Amplifiers and Preamplifiers - (395 companies)Audio amplifiers and audio preamplifiers are used to increase the amplitude of sound signals. Preamplifiers or preamps are designed to amplify low-level signal from a high-impedance device such as a microphone or instrument pick-up. After pre-amplification, the signal is sent to a power amplifier or amp, which provides the higher current necessary to drive the speakers.
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Power Amplifiers - (191 companies)Power amplifiers deliver a specific amount of AC power to a load. They are used in audio frequency and radio frequency applications.
Product News
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Classic Automation LLC
Extend the lifecycle of your Mitsubishi system Classic Automation stocks a large inventory of Mitsubishi MELSEC parts as well as operator panels and FREQROL drives and MELSERVO spares. We extend the lifecycle of many Mitsubishi systems with expert repair services and comprehensive testing procedures. All parts and repairs come with a 2-year warranty. Search our inventory for the Mitsubishi parts you require or select the Mitsubishi part number below to view our live inventory levels. If you do not see what you require, please contact us... (read more)Browse AC Motor Drives Datasheets for Classic Automation LLC -
Skyworks Solutions, Inc.
New High Gain LNA is Pin-to-Pin Compatible New High Gain LNA is Pin-to-Pin Compatible with Family of High Performance LNAs. The SKY67181-396LF is a high gain, low noise amplifier designed to meet the challenging requirements of cellular LTE and 5G NR infrastructure applications. This LNA features ultra low-noise figure, high gain, and operates over a wide range of frequencies. To reduce PCB board space, this device is housed in an ultra-compact 2 x 2 mm plastic surface mount package, that is pin-to-pin compatible with the previously... (read more) -
Skyworks Solutions, Inc.
Ultra low-noise figure, high-linearity LNAs To meet the challenging requirements of cellular LTE and 5G NR infrastructure applications, Skyworks has released the SKY67183-396LF and SKY67189-396LF low noise amplifiers (LNAs). These LNAs feature ultra low-noise figure, exceptional linearity, and operate over a wide range of frequencies. To reduce PCB board space, these devices are housed in an ultra-compact 2 x 2 mm plastic surface mount package. The SKY67183-396LF and SKY67189-396LF are ideal for 2G/3G/4G/5G TDD and FDD infrastructure... (read more)Browse RF Amplifiers Datasheets for Skyworks Solutions, Inc. -
Richardson RFPD
SKY67183: 400 to 6000 MHz LNA from Skyworks The SKY67183-396LF is a wide-band low-noise amplifier with superior gain flatness and exceptional linearity. The compact 2 x 2 mm, 8-pin Dual Flat No Lead packaged LNA is designed for FDD and TDD 4G LTE and 5G NR infrastructure systems operating from 400 to 6000 MHz. The internal active bias circuitry provides stable performance over temperature and process variation. Features: - Very low noise figure. - Temperature and process-stable active bias up to +115 C. - Wide operating voltage range... (read more)Browse RF Amplifiers Datasheets for Richardson RFPD -
Skyworks Solutions, Inc.
High Gain LNA for S and C-band Low Noise Receivers The SKY67180-306LF is a two-stage, low-noise amplifier (LNA) with active bias and high-linearity performance. The front end of the device provides an ultra-low noise figure (NF) while the output stage provides high gain, linearity, and efficiency. With excellent thermal performance, the SKY67180-306LF is rated for operation up to +105 C. The SKY67180-306LF is provided in a 4 x 4 mm, 16-pin Quad Flat No-Lead (QFN) package. (read more)Browse RF Amplifiers Datasheets for Skyworks Solutions, Inc. -
Marki Microwave LLC
AMM-9860PSM - 3 to 30 GHz Surface Mount LNA AMM-9860PSM - Marki Microwave 's new AMM-9860PSM offers industry-leading LNA performance from 3 to 30 GHz in a compact 3mm QFN offering exceptionally flat response across its entire operating bandwidth. Capable of providing 13.5dB gain and +28dBm OIP3 with a low 2.7 dB typical noise figure, the AMM-9860PSM is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. (read more)Browse RF Amplifiers Datasheets for Marki Microwave LLC -
Marki Microwave LLC
AMM-9858PSM - 2 to 20 GHz Surface Mount LNA AMM-9858PSM - Marki Microwave 's new AMM-9858PSM offers industry-leading LNA performance from 2 to 20 GHz in a compact 3mm QFN offering exceptionally flat response across its entire operating bandwidth. Capable of providing 17dB gain and +30dBm OIP3 with a low 1.9 dB typical noise figure, the AMM-9858PSM is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. (read more)Browse RF Amplifiers Datasheets for Marki Microwave LLC -
Marki Microwave LLC
AMM-9852PSM - DC to 20 GHz Surface Mount LNA AMM-9852PSM - Marki Microwave 's new AMM-9852PSM offers industry-leading LNA performance from DC to 20 GHz in a compact 3mm QFN offering exceptionally flat response across its entire operating bandwidth. Capable of providing 17dB gain and +33dBm OIP3 with a low 1.8 dB typical noise figure, the AMM-9852PSM is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. (read more)Browse RF Amplifiers Datasheets for Marki Microwave LLC -
Marki Microwave LLC
AMM-9854PSM - DC to 30 GHz Surface Mount LNA AMM-9854PSM - Marki Microwave 's new AMM-9852PSM offers industry-leading LNA performance from DC to 30 GHz in a compact 3mm QFN offering exceptionally flat response across its entire operating bandwidth. Capable of providing 14dB gain and +25dBm OIP3 with a low 2.5 dB typical noise figure, the AMM-9854PSM is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. (read more)Browse RF Amplifiers Datasheets for Marki Microwave LLC -
Richardson RFPD
CHA2595-QDG: 27.5-43.5 GHz LNA from UMS Description: The CHA2595-QDG is a wideband monolithic Low Noise Amplifier with state-of-the-art wideband, low noise, adjustable gain performance. It is designed for a wide range of applications, from military to commercial communication and test instrumentation systems. It is manufactured with a successfully space evaluated pHEMT process, 100nm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a RoHS compliant low cost SMD package. (read more)Browse RF Amplifiers Datasheets for Richardson RFPD
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MMIC's for space-borne systems: status and prospects
Both PHEMT and MESFET are used on the program. RF equipment of Globalstar is about to be shared between Space System Loral (Active antennas, L/C converters), Alcatel (C/S converters, TTC transponders), Alenia (L-Band LNA ), Mitsubishi (S and C Band SSPAs) and Hyundai' (Local Oscillator).
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Low-noise device and circuit characterization at cryogenic temperatures for high sensitivity microwave receivers
… are carrying out extensive activity on low temperature characterization of on wafer transistors ( MESFET ’s, HEMT’s, HBT’s … … K, step 50 K) in the 6-18 GHz fiequencyrange for InGaAs HEMT’s (MGF4318,by Mitsubishi Semiconductor). We have also characterized the noise performance of a cascaded isolator- LNA (AF64- 08001200LNA by MITEK, customarymade …
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Modelithics Launches Non-Linear Transistor Library For Agilent ADS
… to 100 watts or more, down to low-noise pHEMTs and BJTs for LNA and oscillator design. The NLT Library contains models for a wide variety of BJT, JFET, MOSFET, MESFET , and pHEMT transistors from vendors, including Cree, Agilent, Excelics, Infineon, ON Semi, Mitsubishi , Motorola, NEC, Philips, and Rohm, with more to be added continuously.
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V-band high-power low phase-noise monolithic oscillators and investigation of low phase-noise performance high drain bias
He is currently developing millimeter-wave monolithic IC’s, ( LNA ’s mixers, oscillators) using HEMT technologies in the … In 1993, he joined the Mitsubishi Electric Corpo- ration, Hyogo, Japan, where he has been engaged in … … he has been engaged in the development of microwave semiconductor devices, including GaAs MESFET ’s and MMIC’s.
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1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)
Ishida, Information TechnologyR&D Centel;Mitsubishi Electric Corp., Kanagawa, Japan; "SystemLSI Division, Mitsubishi Electric Corp. A5.2 GHz Variable Gain LNA MMIC for AdaptiveAntenna Combining, F. Ellinger, U. Lott and W. Bachtold, BaAs MESFET Dual-GateMixer with Active Filter Design for Ku-BandApplications, C.-H. Lee, S. Han and …
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Papers from Journals Published in Australia, India, China, Korea, and Japan in 1994 [Asia-Pacific Abstracts]
… formers, by M. Matsunaga and T. Katagi (Electro-optics & Microwave Systems Laboratory, Mitsubishi Electric Co., Ka … 26) 12-GHz Low-Noise MMIC Amplifier with GaAs Pulse-Doped MESFET 's, by N. Shiga, S … A monolithic four-stage low-noise amplifier ( LNA ) is demonstrated for direct broadcast satellite down-converters using …
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Air Bridge Based Planar Hybrid Technology For Microwave And Millimeterwave Applications
Fig. 4 shows scanning electron micrographs of a GaAs MESFET (MGFC 1402 from Mitsubishi ) with air-bridge interconnections. [9] Lunden 0.-P, Sipila M and Jenu M.: A 60 GHz LNA using commercially available PM …
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IMS 2009 Schedule
… Institute,Taiwan RMO4B-5: A 1.3 V, 65nm CMOS, Coilless Combined Feedback LNA with Integrated Single … Univ of Catania, Italy RMO4D-5: K-band Diamond MESFETs for RFIC Technology Chair: Noriharu Suematsu, Mitsubishi Electric Co-Chair: Bruce Thompson, Motorola ARTC RTU1B .
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Jet Propulsion Laboratory/NASA Lewis Research Center space qualified hybrid high temperature superconducting/semiconducting 7.4 GHz low-noise downconverter for...
Each stage of the flighVqualification (prototype) LNA units uses a GaAs-based Fujitsu FHXISX ( Mitsubishi 4414C) HEMT chip device. HTS RESONATORSTABILIZEDOSCILLATOR The local oscillator is a GaAs MESFET -based, reflection mode circuit implemented as a hybrid …
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MMIC progress in Japan
… of 7.3dB at 26GHz is the best noise figure value for K-band LNAs ever reported. Mitsubishi has developed an extremely low-noise 12-GHz-band M M l C a m p … MESFET .
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