Monolithic Germanium Silicon Avalanche Photodiodes

Description: Photodiode 420nm 160ps 8-WBGA

• Spectral Response Range: 200 to 900 nm
• Rise Time: 0.16 ns
• Operating Temperature: -40 to 85 C
• Dark Current: 100 nA

Description: Low temperature coefficient type APD for 800 nm band

• Sensitivity: 0.5 A/W
• Spectral Response Range: 400 to 1,000 nm
• Active Area Diameter or Length: 1.5 mm
• Active Area Height: 1.5 mm

Description: Surface mount type COB package near-infrared detector The G15978-0020P is an InGaAs APD available in a surface mount type COB package. It is much smaller than the previous metal package type (G14858-0020AA), making it suitable for inclusion in compact and mobile equipment. Features - Low dark

• Sensitivity: 0.8 A/W
• Spectral Response Range: 950 to 1,700 nm
• Active Area Diameter or Length: 0.20000000000000004 mm
• Active Area Height: 0.20000000000000004 mm

Description: Variable gain, stable detection even at high gain The C10508-01 consists of an APD, current-to-voltage converter, high-voltage power supply circuit as well as microcontroller for compensating temperature with high stability on the basis of information received from the themperature sensor. The

• Active Area Diameter or Length: 1 mm
• Photodiode Type: Avalanche Photodiode

Description: Surface mount type 16-element Si APD array The S15249 is a surface mount type Si APD array with high sensitivity in the short wavelength range and low bias operation. This offers uniform gain and small crosstalk between elements. Features -High sensitivity in the short wavelength range QE=77%

• Spectral Response Range: 350 to 1,000 nm
• Active Area Diameter or Length: 0.7000000000000001 mm
• Active Area Height: 2 mm
• Dark Current: 5 nA

Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based

• Active Area Diameter or Length: 0.0044 mm
• Photodiode Type: Avalanche Photodiode
• Features: Other
• Photodiode Material: Silicon Carbide

Description: Silicon Avalanche Photodiode

• Spectral Response Range: 200 to 1,000 nm
• Photodiode Type: Avalanche Photodiode
• Features: Other
• Photodiode Spectral Response: Visible

Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range

• Spectral Response Range: 750 to 930 nm
• Active Area Diameter or Length: 1 mm
• Rise Time: 2 ns
• Dark Current: 2 nA

Description: The NR4512 Series is an InGaAs 2.5 Gb/s APD ROSA with an internal pre-amplifier in a receptacle type package designed for SFP transceiver with LC duplex receptacle ideal as a receiver for OC-48 applications.

• Sensitivity: 0.8 A/W
• Spectral Response Range: 1,310 to 1,550 nm
• Active Area Diameter or Length: 0.05000000000000001 mm
• Operating Temperature: -40 to 85 C

Description: Automatic dynamic cancellation of up to 98% of background light

• Spectral Response Range: 800 to 1,800 nm
• Active Area Diameter or Length: 5.000000000000001 mm
• Rise Time: 200,000,000 ns
• Photodiode Material: Germanium

Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to

• Sensitivity: 50 to 55 A/W
• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 0.04 mm
• Active Area Height: 230 mm

Description: The LAPD 1550-200R is a 200 um InGaAs APD housed in a hermetic 3 pin TO46 Package. The low noise and high sensitivity of the LAPD 1550-200R APD makes it ideal for use in range finding, sensors, OTDRs and any other low light level detection application. Product Features Low Noise High Sensitivity

• Sensitivity: 0.75 A/W
• Spectral Response Range: 800 to 1,700 nm
• Active Area Diameter or Length: 0.20000000000000004 mm
• Operating Temperature: -40 to 85 C

Description: No Description Provided

• Spectral Response Range: 350 to 800 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Rise Time: 1.8 ns

Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available

• Sensitivity: 42 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 3 mm
• Rise Time: 5 ns

Description: No Description Provided

• Spectral Response Range: 350 to 950 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Rise Time: 5 ns

Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature stability and are designed to be

• Sensitivity: 0.8 to 0.9 A/W
• Spectral Response Range: 1,200 to 1,650 nm
• Photodiode Type: Avalanche Photodiode
• Photodiode Package: Bare Die, Surface Mount Technology (SMT)

Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially low bias

• Spectral Response Range: 650 to 850 nm
• Active Area Diameter or Length: 0.5 mm
• Rise Time: 0.35 ns
• Dark Current: 0.5 to 1 nA

Description: No Description Provided

• Spectral Response Range: 310 to 850 nm
• Active Area Diameter or Length: 2.1 mm
• Active Area Height: 2.1 mm
• Rise Time: 0.6 ns

Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range

• Spectral Response Range: 750 to 930 nm
• Active Area Diameter or Length: 0.23 mm
• Rise Time: 0.5 ns
• Dark Current: 0.5 to 1 nA

Description: The LAPD 1550-30R is a 30um InGaAs mesa structure APD housed in a hermetic 3 pin TO46 Package with lens cap. The low noise, high sensitivity and broad Vbr curve make the LAPD 1550-30R APD ideal for use in range finders and high sensitivity line receivers. The device is RoHS compliant.

• Spectral Response Range: 1,260 to 1,650 nm
• Active Area Diameter or Length: 0.030000000000000002 mm
• Operating Temperature: -40 to 85 C
• Dark Current: 30 to 50 nA