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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Active Area Diameter or Length: 5 mm
- Photodiode Material: Germanium
- Rise Time: 2.00E8 ns
- Spectral Response: IR
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Supplier: Electro Optical Components, Inc.
Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based
- Active Area Diameter or Length: 0.0044 mm
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon Carbide
- Photodiode Package / Mounting: Other
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.5000 to 1 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 1.5 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 0.8000 to 2 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially low bias
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.2000 to 0.5000 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: Photonique SA
Description: UV-blue solidstate photon detector/counter
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 10000 nA
- Operating Temperature: -40 to 40 C
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Supplier: MACOM
Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature stability and are designed to be
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Bare Die, Surface Mount Technology (SMT)
- Sensitivity: 0.8000 to 0.9000 A/W
- Spectral Response: IR
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter for matrix assemblies
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Dark Current: 15000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Photonique SA
Description: UV-blue solidstate photon detector/counter; Non-magnetic ceramic package
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 10000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Hamamatsu Photonics Europe
Description: High-speed response InGaAs APD The G8931 series are InGaAs APDs used for distance measurement, optical communication, and low-light-level detection. The G8931-04 provides high-speed response at 2.5 Gbps, which is necessary for SONET, G/GE-PON, and other optical trunk lines. Features - High-speed
- Active Area Diameter or Length: 0.0400 mm
- Active Area Height: 0.0400 mm
- Dark Current: 65 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Hamamatsu Photonics Europe
Description: Low bias operation, for 800 nm band, TE-cooled type This is a TE-cooled type APD with low-bias operation, capable of high accuracy detection. Features - Stable operation at low bias - High-speed response - High sensitivity and low noise
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 2 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: DigiKey
Description: Photodiode 420nm 110ps 8-WBGA
- Dark Current: 1900 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
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Supplier: Hamamatsu Photonics Europe
Description: Low bias operation, for 800 nm band, TE-cooled type This is a TE-cooled type APD with low-bias operation, capable of high accuracy detection. Features - Stable operation at low bias - High-speed response - High sensitivity and low noise
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Hamamatsu Photonics Europe
Description: Low bias, high-speed Si APD for 900 nm The S12426 series Si APD are designed to provide a peak sensitivity wavelength in the 900 nm band where optical rangefinders are increasingly used. The S12426 series delivers faster response and lower bias operation than our existing Si APD (S9251 series).
- Active Area Diameter or Length: 0.2000 mm
- Active Area Height: 0.2000 mm
- Dark Current: 1 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: DigiKey
Description: Photodiode 800nm 300ps 2-SMD, No Lead
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 0.1000 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: DigiKey
Description: SENSOR PHOTODIODE 420NM 4SMD
- Dark Current: 50 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
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Supplier: DigiKey
Description: Photodiode 1550nm 7ns TO-8 Style, 12 Leads
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Rise Time: 7 ns
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to
- Active Area Diameter or Length: 0.2000 mm
- Active Area Height: 230 mm
- Dark Current: 0.2000 nA
- Operating Temperature: -20 to 85 C
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Supplier: OSI Optoelectronics
Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available
- Active Area Diameter or Length: 3 mm
- Dark Current: 15 nA
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: California Eastern Laboratories - CEL
Description: InGaAs APD In Coaxial Package For Fiber Optic Communication And OTDR Applications
- Active Area Diameter or Length: 0.0800 mm
- Dark Current: 7 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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OSA | High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ ~1.55 μm
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OSA | Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth-product
… J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. H. Kuo, H. W. Chen, W. Sfar Zaoui, J. E. Bowers, A. Beling, D. C. Mcintosh, and J. C. Campbell, “ Monolithic germanium / silicon avalanche photodiodes with 340GHz gain-bandwidth …
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Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product : Abstract : Nature Photonics
Monolithic germanium / silicon avalanche photodiodes with 340 GHz gain-bandwidth product : Abstract : Nature Photonics . -
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Graphene photonics and optoelectronics : Article : Nature Photonics
Monolithic germanium / silicon avalanche photodiodes with 340 GHz gain-bandwidth product.
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Scandium effect on the luminescence of Er-Sc silicates prepared from multi-nanolayer films
… Y, Liu HD, Morse M, Paniccia MJ, Zadka M, Litski S, Sarid G, Pauchard A, Kuo YH, Chen HW, Sfar Zaoui W, Bowers JE, Beling A, McIntosh DC, Zheng X, Campbell JC: Monolithic germanium / silicon avalanche photodiodes with 340 GHz gain …
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Integrated Optical Interconnect Architectures for Embedded Systems
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Kuo,H.-W.Chen,W.S.Zaoui,J.E.Bowers,A.Beling,D.C.McIntosh,X.Zheng,J.C.Campbell, Monolithic germanium / silicon avalanche photodiodes with 340 GHz gain-bandwidth product.
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Optical Signal Processing by Silicon Photonics
Kang YM, Liu HD, Morse M et al (2009) Monolithic germanium / silicon avalanche photodi- odes with 340 GHz gain-bandwidth product.
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Ge-on-Si for Si-based integrated materials and photonic devices
… J, Zadka M, Litski S, Sarid G, Pauchard A, Kuo Y H, Chen H W, Zaoui W S, Bowers J E, Beling A, McIntosh D C, Zheng X G, Campbell J C. Monolithic germanium / silicon avalanche photodiodes with 340 GHz gain– …