MOS Controlled Thyristor

Description: MOS-Gated Thyristors are designed for high-power pulse and capacitive discharge applications, switched on by a voltage applied at the gate terminal (MOS structure). Capable of carrying current up to 32kA for a period of 1 microsecond

• Thyristor Type: Silicon Controlled Rectifier (SCR)

Description: These N-Channel Junction FETs are characterized tor ultra low noise applications requiring tightly controlled and specified noise parameters at 10 Hz and 1000 Hz. Tight matching specifications make these devices ideal as the input stage for low frequency differential, instrumentation

• Pin Count: 6
• T_J: 150 C
• Thyristor Type: MOS Controlled Thyristor (MCT)
• Features: Other

Description: Category: Discrete Semiconductor Products - Thyristors - SCRs - Modules Manufacturer: AMIS Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL Number of Elements: 3 Voltage - Supply, Single/Dual (±): ±12

• Thyristor Type: Silicon Controlled Rectifier (SCR)

Description: 5mA 600V One-way thyristor SOT-23 TRIACs ROHS

• V_DRM: 600 volts
• I_T(RMS): 0.6 amps
• V_GT: 0.8 volts
• V_TM: 1.7 volts

Description: 60 mm Thyristor/Thyristor Module with 1600 V in pressure contact technology Thyristor/Thyristor 60 mm Power Block 1600 V, 570 A module for phase control in pressure contact technology using an isolated copper base plate. Summary of Features Pressure contact technology for

• Features: Other, Power Diode
• RoHS Compliant: RoHS Compliant

Description: MOS Controlled Thyristor, Product overview: SJ6010V1TP from Littelfuse is a Scrs for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines,

Description: charging Hydrogen electrolysis Motor Control Photovoltaic Designers who used this product also designed with TT570N16KOF | Thyristor / Diode Modules ISO1I811T | Isolated Industrial Interface IMZA120R007M1H | Silicon Carbide MOSFET Discretes ISO1H812G | Isolated Industrial Interface

• V_F: 1.4 volts
• I_F: 40,000 mA
• I_R: 0.023 mA
• I_FSM: 290 amps

Description: version is also available: 2ED2181S06F. Based on our SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

• Peak Output Current: 2.5 amps
• Supply Voltage: 10 to 20 volts
• Propagation Delay: 200 ns
• Driver Type: High-side Gate Driver, Low-side Gate Driver