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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series: OptiMOS™ 5 Product Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide
- Package Type: SOT3
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series: OptiMOS™ Package: Tape & Reel (TR) Vgs (Max): ±20V Operating Temperature: -55°C ~ 175°C (TJ)
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Rohm Semiconductor Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status: Active FET Type: P
- Package Type: SOT3
- Polarity: P-Channel
- QG: 15.2 nC
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Rohm Semiconductor Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status: Active FET Type: P
- Package Type: SOT3
- Polarity: P-Channel
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Supplier: Microchip Technology, Inc.
Description: ground reference N-Channel MOSFET. The high-side driver is designed to drive a floating N-Channel MOSFET. since the N-Channel is floating, this output needs to be able to handle the high voltages required to fully turn on the high-side MOSFET. An external bootstrap
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: 22kW Bi-directional High Efficiency Active Front End (AFE) Converter Download Reference Design Files DOCUMENTATION ONLY – NO HARDWARE This reference design demonstrates the application of Wolfspeed’s 1200V C3M SiC MOSFETs to create a 22kW three phase
- Category: Development Board
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Supplier: Infineon Technologies AG
Description: package. The IRS2005 is a 200 V level shift junction isolated MOSFET driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or
- Driver Type: High-side Gate Driver, Low-side Gate Driver
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 0.2900 amps
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Supplier: Microchip Technology, Inc.
Description: A typical) High output drive (1A peak current, HC version) CMOS outputs with rail-to-rail swing Current-mode operation up to 500kHz Trimmed 5V bandgap reference Pin-for-pin compatible with UC3842/3843/3844/384 5(A) Trimmed oscillator discharge current UVLO with hysteresis Low
- IC Package Type: DIP / CDIP / PDIP, SOIC / SOP, Other
- Input Voltage (VIN): 9 to 20 volts
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An in-house developed resettable MOSFET dosimeter for radiotherapy
The MOSFETs have been cross - referenced with a 0.6 cc NE2571 Farmer-type ionization chamber under an irradiation set-up simulating TBI conditions (i.e. extended SSD of 500 cm, nominal field size 40 × 40 cm2 at isocentre, 15 MV …
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Investigation of failure mechanisms in power VDMOSFETs
ToSid, B. PeSic'and N. Stojadinovic',"HTSL and HTRB ReliabilityTesting of Power VDMOSFETs", Proc. 20thMEL'95 ConJ, NiS, 1995 (p. 285) [7] TMOS Power MOSFET - Selector Guide Cross Reference and Reliability Data, Motorola Inc., 1985 [8] H.-U. Schreiber, Solid-State Electron., 29, p …
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http://www.nxp.com/documents/line_card/75017313.pdf
Advanced cross reference list DFN* MOSFETs .
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http://www.nxp.com/documents/brochure/75017277.pdf
Internet - www.nxp.com/mosfets Only two clicks to any MOSFET product information On-line cross references Datasheets SimPort – NXP’s application simulation tool Spice models, for non-NXP simulation tools Thermal models Chemical content …
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http://www.doiserbia.nb.rs/img/doi/1451-3994/2011/1451-39941101018D.pdf
***, Discrete and Special Technology Group, TMOS Power MOSFET , Selector Guide, Cross Reference and Reliability Data, Motorola Inc., 1985 [10] McWhorter, P. J., Winokur, P. S., Simple Technique for Separating the Effects of Interface Traps and Trapped-Oxide Charge in Metal-Oxide-Semiconductor …
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Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs
[811 TMOS Power MOSFET , Selector Guide, Cross Reference and ReliabilityData, Motorola Inc., 1985.
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Nano Devices and Circuit Techniques for Low-Energy Applications and Energy Harvesting
When body-tied FinFETs were first reported, they were referred to as Omega (Ω) MOSFETs because the cross -section of the body resembles the Greek letter Ω.
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Matching MOSFET Drivers to MOSFETs
Equation 3 represents the power dissipation due to MOSFET driver cross -conduction, or what is commonly referred to as shoot-through.
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An analytical drain current model for submicrometer and deep submicrometer MOSFET's
Let us refer to the schematic cross section of n-channel MOSFET shown in Fig. 1.
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A charge-sheet analysis of short-channel enhancement-mode MOSFETs
Let us refer to the simplified cross section of a short- channel MOSFET made on a p-doped substrate shown in Fig. 1, where x represents the coordinate perpendicular to the silicon surface and y is the coordinate along the channel from …