MOSFET Cross Reference

Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series: OptiMOS™ Package: Tape & Reel (TR) Vgs (Max): ±20V Operating Temperature: -55°C ~ 175°C

• Features: MOSFET, Power MOSFET
• Package Type: SOT3

Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Wolfspeed, Inc. Category: Discrete Semiconductor Products Transistors FETs, MOSFETs RF FETs, MOSFETs Series: GaN Package: Tray Product Status: Active Technology: HEMT Frequency: 2.9GHz ~ 3.5GHz Voltage -

• Operating Frequency: 2,900 to 3,500 MHz
• Features: MOSFET, MOSFET RF Transistors
• Package Type: SOT3

Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Diodes Incorporated Category: Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays Package: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount

• Features: MOSFET
• Package Type: SOT3

Description: reference N-Channel MOSFET. The high-side driver is designed to drive a floating N-Channel MOSFET. since the N-Channel is floating, this output needs to be able to handle the high voltages required to fully turn on the high-side MOSFET. An external bootstrap capacitor is

• Features: MOSFET

Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 750091-TK56E12N1 Family Name: 41129 Manufacturer Homepage: www.semicon.toshiba.co.jp/eng Reference case: TO-220 Reference Date Code: 15+ Alternative Parts (Cross-Reference): IPP048N12N3GXKSA1;

Description: down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in

Description: pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts.

Description: switcher OPTIGA TRUST M SLS32AIA | OPTIGA™ Trust BSC065N06LS5 | N-Channel Power MOSFET BSC039N06NS | N-Channel Power MOSFET BSC110N15NS5 | N-Channel Power MOSFET ITS5215L | PROFET™ Industrial | Smart high-side switch TLF51801ELV | OPTIREG™ switcher ITS4090Q-EP-D | PROFET™

• Peak Output Current: 0.29 amps
• Supply Voltage: 10 to 20 volts
• Propagation Delay: 150 ns
• Driver Type: High-side Gate Driver, Low-side Gate Driver

Description: 22kW Bi-directional High Efficiency DC/DC Converter DOCUMENTATION ONLY – NO HARDWARE Download Documentation This reference design demonstrates the application of Wolfspeeds 1200V C3M SiC MOSFETs to create a 22kW Bi-directional High Efficiency DC/DC Converter for electric vehicle (EV)

• Category: Development Board

Description: drive larger MOSFETs, and rail-to-rail output capability increases efficiency, especially at lower supply voltages. The MIC38C4x also features a trimmed oscillator discharge current and bandgap reference. MIC38C4x denotes 8-pin plastic DIP, SOIC, and MM8® packages. MIC38C4x-1 denotes

• Input Voltage (V_IN): 7.6 to 20 volts
• Package Type: DIP / CDIP / PDIP, SOIC / SOP
• Features: Other