Picosecond Pulsed Laser Diode

Description: Picosecond pulsed diode laser features with integrated electronics,It features integrated electronics, repetition rate 100kHz to 80MHz, synchronized signal output. Fast ON/ OFF/ multiplexing capability. Suitable for fluorescence excitation, time resolve spectrum, highly

• Wavelength Range: 405 nm
• Operating Temperature Range: 10 to 35 C
• Beam Divergence: 1 millirad
• Laser Type: Laser Diodes

Description: The 532nm and 1064nm Sub-nanosecond Lasers (Microchip Lasers) are based on a passively Q-switched DPSS laser with pulse length of only a few hundred picoseconds. The high pulse energy and excellent beam quality make them an ideal source for industrial and scientific

• Wavelength Range: 532 to 1,032 nm
• Laser Power: 40 to 200 milliwatts
• Laser Wavelength: Green, Infrared
• Laser Output: Pulsed, Q-Switched

Description: The 532nm and 1064nm Sub-nanosecond Lasers (Microchip Lasers) are based on a passively Q-switched DPSS laser with pulse length of only a few hundred picoseconds. The high pulse energy and excellent beam quality make them an ideal source for industrial and scientific

• Wavelength Range: 1,535 nm
• Pulse Energy: 0.1 to 0.3 mJ
• Operating Temperature Range: -40 to 50 C
• Beam Divergence: 6 millirad

Description: The 532nm and 1064nm Sub-nanosecond Lasers (Microchip Lasers) are based on a passively Q-switched DPSS laser with pulse length of only a few hundred picoseconds. The high pulse energy and excellent beam quality make them an ideal source for industrial and scientific

• Wavelength Range: 1,064 nm
• Laser Power: 80 to 200 milliwatts
• Pulse Energy: 0.01 to 0.16 mJ
• Operating Voltage: 100 to 240 volts

Description: Features Rectangular Waveform 500ps Risetime, 45 V Pulse Adjustable Amplitude using step attenuators 1-100 ns Duration "Turbo" option with 50 V and 250 ps risetime Positive or Negative polarity output Applications Testing the switching time of semiconductors Driving high current laser

• Pulse Duration: 0.001 to 0.1 µs
• Amplitude: 50 volts
• User Interface: Front Panel and Display
• Device Type: Generator

Description: Features ±35 V Amplitude 1 MHz Max. Repetition Rate 500 ps Impulse Duration (FWHM) Low Jitter, 1.5 ps RMS Applications Spectrum Amplitude Calibrators for EMI measurements Laser Diode Drivers EMP simulators Impulse Response Testing The Picosecond Advantage: Dual +35 V and -35 V

• Pulse Duration: 0.0004999999999802 µs
• Amplitude: 35 volts
• User Interface: Front Panel and Display
• Device Type: Generator

Description: of high speed applications such as viewing of Q-switched, mode-locked, or rapidly modulated laser signals and picosecond laser alignment. It is a low-cost solution for ultra-fast measurements up to a 12.5 GHz bandwidth. These detectors are suitable for applications where

• Receiver Rise Time: 0.03 ns
• Bandwidth: 0 to 12,500 MHz
• Features: Other
• Receiver Type: PIN

Description: use, you can extend the lifetime of the batteries. 818-BB Series Biased Photodiode Detectors are cost effective diagnostic tools suitable for a variety of high speed applications such as viewing of Q-switched, mode-locked, or rapidly modulated laser signals and picosecond laser

• Receiver Rise Time: 0.025 ns
• Bandwidth: 0 to 15,000 MHz
• Features: Other
• Receiver Type: PIN

Description: connector output for ease of assembly. High Linear Output for Up to 40 mW The front-illuminated mesa-structured PIN design allows a high input power level of up to 40 mW for F-PD-23 and 20 mW for F-PD-30. Typical diodes can handle only up to a few mW of optical power before saturation. Up to

• Bandwidth: 28,000 to 30,000 MHz
• Operating Temperature: 14 to 140 F
• Features: Other
• Receiver Type: PIN