Quadrant Avalanche Photodiodes

Description: Photodiodes Segmented quadrant avalanche photodiode with enhanced IR responsivity in hermetic TO type metal can.

Description: SILICON APD, 1064NM

• Sensitivity: 0.36 A/W
• Spectral Response Range: 400 to 1,100 nm
• Rise Time: 2 ns
• Operating Temperature: -45 to 85 C

Description: Low bias operation, for 800 nm band This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.

• Sensitivity: 0.5 A/W
• Spectral Response Range: 400 to 1,000 nm
• Active Area Diameter or Length: 0.5 mm
• Active Area Height: 0.5 mm

Description: Standard type, Active area: Φ1.0 mm APD module is designed for easy use of Si APD.

• Active Area Diameter or Length: 1 mm
• Photodiode Type: Avalanche Photodiode

Description: Silicon Avalanche Photodiode

• Spectral Response Range: 200 to 1,000 nm
• Photodiode Type: Avalanche Photodiode
• Features: Other
• Photodiode Spectral Response: Visible

Description: InGaAs APD that greatly reduces dark current This InGaAs APD greatly reduces dark current over existing products by the use of a new device structure and improved processing. The G14858-0020AA is used for distance measurement, low-light-level detection, and so on. Features - Low dark current - Low

• Sensitivity: 0.8 A/W
• Spectral Response Range: 950 to 1,700 nm
• Active Area Diameter or Length: 0.20000000000000004 mm
• Active Area Height: 0.20000000000000004 mm

Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based devices,

• Active Area Diameter or Length: 0.0044 mm
• Photodiode Type: Avalanche Photodiode
• Features: Other
• Photodiode Material: Silicon Carbide

Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for

• Sensitivity: 50 to 55 A/W
• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 0.04 mm
• Active Area Height: 500.00000000000006 mm

Description: The NR8300FP-CC is an InGaAs avalanche photo diode module in a coaxial package with single mode fiber, and can be used in OTDR systems.

• Sensitivity: 0.94 A/W
• Spectral Response Range: 1,310 to 1,550 nm
• Active Area Diameter or Length: 0.030000000000000002 mm
• Operating Temperature: -40 to 85 C

Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially low bias

• Spectral Response Range: 650 to 850 nm
• Active Area Diameter or Length: 0.5 mm
• Rise Time: 0.35 ns
• Dark Current: 0.5 to 1 nA

Description: No Description Provided

• Spectral Response Range: 310 to 850 nm
• Active Area Diameter or Length: 2.1 mm
• Active Area Height: 2.1 mm
• Rise Time: 0.6 ns

Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with

• Sensitivity: 42 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 0.30000000000000004 mm
• Rise Time: 0.4 ns

Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range

• Spectral Response Range: 750 to 930 nm
• Active Area Diameter or Length: 0.23 mm
• Rise Time: 0.5 ns
• Dark Current: 0.5 to 1 nA

Description: The LAPD 1550-30R is a 30um InGaAs mesa structure APD housed in a hermetic 3 pin TO46 Package with lens cap. The low noise, high sensitivity and broad Vbr curve make the LAPD 1550-30R APD ideal for use in range finders and high sensitivity line receivers. The device is RoHS compliant.

• Spectral Response Range: 1,260 to 1,650 nm
• Active Area Diameter or Length: 0.030000000000000002 mm
• Operating Temperature: -40 to 85 C
• Dark Current: 30 to 50 nA

Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range

• Spectral Response Range: 750 to 930 nm
• Active Area Diameter or Length: 1 mm
• Rise Time: 2 ns
• Dark Current: 2 nA

Description: The LAPD 1550-200R is a 200 um InGaAs APD housed in a hermetic 3 pin TO46 Package. The low noise and high sensitivity of the LAPD 1550-200R APD makes it ideal for use in range finding, sensors, OTDRs and any other low light level detection application. Product Features Low Noise High Sensitivity

• Sensitivity: 0.75 A/W
• Spectral Response Range: 800 to 1,700 nm
• Active Area Diameter or Length: 0.20000000000000004 mm
• Operating Temperature: -40 to 85 C

Description: No Description Provided

• Spectral Response Range: 350 to 800 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Rise Time: 1.8 ns

Description: No Description Provided

• Spectral Response Range: 350 to 950 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Rise Time: 5 ns

Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature stability and are designed to be

• Sensitivity: 0.8 to 0.9 A/W
• Spectral Response Range: 1,200 to 1,650 nm
• Photodiode Type: Avalanche Photodiode
• Photodiode Package: Bare Die, Surface Mount Technology (SMT)