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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes Segmented quadrant avalanche photodiode with enhanced IR responsivity in hermetic TO type metal can.
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Supplier: DigiKey
Description: Photodiode 420nm 160ps 8-WBGA
- Spectral Response Range: 200 to 900 nm
- Rise Time: 0.16 ns
- Operating Temperature: -40 to 85 C
- Dark Current: 100 nA
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Supplier: Hamamatsu Photonics Europe
Description: Low temperature coefficient type APD for 800 nm band
- Sensitivity: 0.5 A/W
- Spectral Response Range: 400 to 1,000 nm
- Active Area Diameter or Length: 1.5 mm
- Active Area Height: 1.5 mm
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Supplier: Hamamatsu Photonics Europe
Description: Surface mount type COB package near-infrared detector The G15978-0020P is an InGaAs APD available in a surface mount type COB package. It is much smaller than the previous metal package type (G14858-0020AA), making it suitable for inclusion in compact and mobile equipment. Features - Low dark
- Sensitivity: 0.8 A/W
- Spectral Response Range: 950 to 1,700 nm
- Active Area Diameter or Length: 0.20000000000000004 mm
- Active Area Height: 0.20000000000000004 mm
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Supplier: Hamamatsu Photonics Europe
Description: Variable gain, stable detection even at high gain The C10508-01 consists of an APD, current-to-voltage converter, high-voltage power supply circuit as well as microcontroller for compensating temperature with high stability on the basis of information received from the themperature sensor. The
- Active Area Diameter or Length: 1 mm
- Photodiode Type: Avalanche Photodiode
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Supplier: Electro Optical Components, Inc.
Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based devices,
- Active Area Diameter or Length: 0.0044 mm
- Photodiode Type: Avalanche Photodiode
- Features: Other
- Photodiode Material: Silicon Carbide
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Supplier: RS Components, Ltd.
Description: Silicon Avalanche Photodiode
- Spectral Response Range: 200 to 1,000 nm
- Photodiode Type: Avalanche Photodiode
- Features: Other
- Photodiode Spectral Response: Visible
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for
- Sensitivity: 50 to 55 A/W
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 0.04 mm
- Active Area Height: 230 mm
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range
- Spectral Response Range: 750 to 930 nm
- Active Area Diameter or Length: 1 mm
- Rise Time: 2 ns
- Dark Current: 2 nA
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Supplier: California Eastern Laboratories - CEL
Description: The NR4512 Series is an InGaAs 2.5 Gb/s APD ROSA with an internal pre-amplifier in a receptacle type package designed for SFP transceiver with LC duplex receptacle ideal as a receiver for OC-48 applications.
- Sensitivity: 0.8 A/W
- Spectral Response Range: 1,310 to 1,550 nm
- Active Area Diameter or Length: 0.05000000000000001 mm
- Operating Temperature: -40 to 85 C
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Supplier: OSI Optoelectronics
Description: The LAPD 1550-200R is a 200 um InGaAs APD housed in a hermetic 3 pin TO46 Package. The low noise and high sensitivity of the LAPD 1550-200R APD makes it ideal for use in range finding, sensors, OTDRs and any other low light level detection application. Product Features Low Noise High Sensitivity
- Sensitivity: 0.75 A/W
- Spectral Response Range: 800 to 1,700 nm
- Active Area Diameter or Length: 0.20000000000000004 mm
- Operating Temperature: -40 to 85 C
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 800 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 1.8 ns
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Supplier: OSI Optoelectronics
Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with
- Sensitivity: 42 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 3 mm
- Rise Time: 5 ns
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 950 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 5 ns
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Supplier: MACOM
Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature stability and are designed to be
- Sensitivity: 0.8 to 0.9 A/W
- Spectral Response Range: 1,200 to 1,650 nm
- Photodiode Type: Avalanche Photodiode
- Photodiode Package: Bare Die, Surface Mount Technology (SMT)
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Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially low bias
- Spectral Response Range: 650 to 850 nm
- Active Area Diameter or Length: 0.5 mm
- Rise Time: 0.35 ns
- Dark Current: 0.5 to 1 nA
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 310 to 850 nm
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Rise Time: 0.6 ns
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range
- Spectral Response Range: 750 to 930 nm
- Active Area Diameter or Length: 0.23 mm
- Rise Time: 0.5 ns
- Dark Current: 0.5 to 1 nA
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Supplier: OSI Optoelectronics
Description: The LAPD 1550-30R is a 30um InGaAs mesa structure APD housed in a hermetic 3 pin TO46 Package with lens cap. The low noise, high sensitivity and broad Vbr curve make the LAPD 1550-30R APD ideal for use in range finders and high sensitivity line receivers. The device is RoHS compliant.
- Spectral Response Range: 1,260 to 1,650 nm
- Active Area Diameter or Length: 0.030000000000000002 mm
- Operating Temperature: -40 to 85 C
- Dark Current: 30 to 50 nA
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More Information Top
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Bit Error Rate Testing Of Quadrant Photodetectors
We evaluated candidate Quadrant Avalanche Photodiodes as optical communication receivers and optical acquisition /tracking receivers in a testbed which exercises both functions simultaneously.
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OSA | Linearity of quadrant avalanche photodiode in laser tracking system
Linearity of quadrant avalanche photodiode in laser tracking system .
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Deep Space Optical Communications
Previous designs of lasercom systems generally achieved the desired pointing accuracy by using a directionally sensitive detector (such as a quadrant avalanche photodiode ) to measure the angular error between the detector lineof-sight and the beacon direction [70,71].
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Atmospheric tip/tilt compensation for laser beam tracking with amateur telescopes
M. Toyoda, K. Araki, Y. Suzuki, "Measurement of the characteristics of a quadrant avalanche photodiode and its application to a laser tracking system," Opt. Eng. 41(1), 145-149 (2002).
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NIST Manuscript Publication Search
Publication Citation: Characterization of a High-Speed (10 MHz) Quadrant Avalanche Photodiode for Measuring Cantilever Displacement .
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Characterization of a 10-MHz quadrant APD for measuring frequency oscillations and tip displacements of microcantilevers
Abstract The room-temperature response of a 10-MHz quadrant avalanche photodiode (APD) is investigated for detection of high frequency oscillations and tip displace- ments of fabricated microcantilevers.
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Pulse-resolved multi-photon X-ray detection at 31 MHz based on a quadrant avalanche photodiode
Pulse-resolved multi-photon X-ray detection at 31 MHz based on a quadrant avalanche photodiode .
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Space station laser communication transceiver
This subsystem consists of an aperture stop relay system (ASRS) which provides stray light control, a bifurcated mirror for acquisition/track field of view separation, a narrow-band optical filter (NBF), and optics which image the beam onto a quadrant avalanche photodiode .
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Phase contrast and darkfield imaging in x-ray microscopy
Work is presently in progress to develop a system based around a quadrant avalanche photodiode .
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Performance of free-space laser communication systems as a function of the sampling rate in the tracking loop
Without the loss of generality, assume that a quadrant avalanche photodiode is used for position sensing, and it provides 4 output signals denoted as A, B, C, and D. Just like in any photodiode circuit these signals will be contaminated with noises …
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