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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes Segmented quadrant avalanche photodiode with enhanced IR responsivity in hermetic TO type metal can.
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Supplier: Electro Optical Components, Inc.
Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based devices, around
- Active Area Diameter or Length: 0.0044 mm
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon Carbide
- Photodiode Package / Mounting: Other
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.5000 to 1 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 1.5 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 0.8000 to 2 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially low bias
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.2000 to 0.5000 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: Photonique SA
Description: UV-blue solidstate photon detector/counter
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 10000 nA
- Operating Temperature: -40 to 40 C
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Supplier: MACOM
Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature stability and are designed to be
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Bare Die, Surface Mount Technology (SMT)
- Sensitivity: 0.8000 to 0.9000 A/W
- Spectral Response: IR
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter for matrix assemblies
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Dark Current: 15000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Photonique SA
Description: UV-blue solidstate photon detector/counter; Non-magnetic ceramic package
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 10000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Hamamatsu Photonics
Description: High-speed response InGaAs APD The G8931 series are InGaAs APDs used for distance measurement, optical communication, and low-light-level detection. The G8931-04 provides high-speed response at 2.5 Gbps, which is necessary for SONET, G/GE-PON, and other optical trunk lines. Features - High-speed
- Active Area Diameter or Length: 0.0400 mm
- Active Area Height: 0.0400 mm
- Dark Current: 65 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Hamamatsu Photonics
Description: Low bias operation, for 800 nm band, TE-cooled type This is a TE-cooled type APD with low-bias operation, capable of high accuracy detection. Features - Stable operation at low bias - High-speed response - High sensitivity and low noise
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 2 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: DigiKey
Description: Photodiode 420nm 110ps 8-WBGA
- Dark Current: 1900 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
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Supplier: Hamamatsu Photonics
Description: Low bias operation, for 800 nm band, TE-cooled type This is a TE-cooled type APD with low-bias operation, capable of high accuracy detection. Features - Stable operation at low bias - High-speed response - High sensitivity and low noise
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Hamamatsu Photonics
Description: Low bias, high-speed Si APD for 900 nm The S12426 series Si APD are designed to provide a peak sensitivity wavelength in the 900 nm band where optical rangefinders are increasingly used. The S12426 series delivers faster response and lower bias operation than our existing Si APD (S9251 series).
- Active Area Diameter or Length: 0.2000 mm
- Active Area Height: 0.2000 mm
- Dark Current: 1 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: DigiKey
Description: Photodiode 800nm 300ps 2-SMD, No Lead
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 0.1000 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: DigiKey
Description: SENSOR PHOTODIODE 420NM 4SMD
- Dark Current: 50 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
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Supplier: DigiKey
Description: Photodiode 1550nm 7ns TO-8 Style, 12 Leads
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Rise Time: 7 ns
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for
- Active Area Diameter or Length: 0.2000 mm
- Active Area Height: 230 mm
- Dark Current: 0.2000 nA
- Operating Temperature: -20 to 85 C
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Supplier: OSI Optoelectronics
Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with
- Active Area Diameter or Length: 3 mm
- Dark Current: 15 nA
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: California Eastern Laboratories - CEL
Description: InGaAs APD In Coaxial Package For Fiber Optic Communication And OTDR Applications
- Active Area Diameter or Length: 0.0800 mm
- Dark Current: 7 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Bit Error Rate Testing Of Quadrant Photodetectors
We evaluated candidate Quadrant Avalanche Photodiodes as optical communication receivers and optical acquisition /tracking receivers in a testbed which exercises both functions simultaneously.
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OSA | Linearity of quadrant avalanche photodiode in laser tracking system
Linearity of quadrant avalanche photodiode in laser tracking system .
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Deep Space Optical Communications
Previous designs of lasercom systems generally achieved the desired pointing accuracy by using a directionally sensitive detector (such as a quadrant avalanche photodiode ) to measure the angular error between the detector lineof-sight and the beacon direction [70,71].
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Atmospheric tip/tilt compensation for laser beam tracking with amateur telescopes
M. Toyoda, K. Araki, Y. Suzuki, "Measurement of the characteristics of a quadrant avalanche photodiode and its application to a laser tracking system," Opt. Eng. 41(1), 145-149 (2002).
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NIST Manuscript Publication Search
Publication Citation: Characterization of a High-Speed (10 MHz) Quadrant Avalanche Photodiode for Measuring Cantilever Displacement .
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Characterization of a 10-MHz quadrant APD for measuring frequency oscillations and tip displacements of microcantilevers
Abstract The room-temperature response of a 10-MHz quadrant avalanche photodiode (APD) is investigated for detection of high frequency oscillations and tip displace- ments of fabricated microcantilevers.
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Pulse-resolved multi-photon X-ray detection at 31 MHz based on a quadrant avalanche photodiode
Pulse-resolved multi-photon X-ray detection at 31 MHz based on a quadrant avalanche photodiode .
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Space station laser communication transceiver
This subsystem consists of an aperture stop relay system (ASRS) which provides stray light control, a bifurcated mirror for acquisition/track field of view separation, a narrow-band optical filter (NBF), and optics which image the beam onto a quadrant avalanche photodiode .
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Phase contrast and darkfield imaging in x-ray microscopy
Work is presently in progress to develop a system based around a quadrant avalanche photodiode .
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Performance of free-space laser communication systems as a function of the sampling rate in the tracking loop
Without the loss of generality, assume that a quadrant avalanche photodiode is used for position sensing, and it provides 4 output signals denoted as A, B, C, and D. Just like in any photodiode circuit these signals will be contaminated with noises …