Silicon Bilateral Switch

Description: SILICON BILATERAL SWITCH (SBS); Peak Repetitive Off State Voltage:-; Gate Trigger Current Max:100µA; Average On State Current:-; On State RMS Current:-; Thyristor Case Style:TO-92; No. of Pins:3Pins; Holding Current Max:500µA; MSL:- RoHS Compliant: Yes

Description: MICROCIRCUIT, DIGITAL, CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON

Description: MICROCIRCUIT, LINEAR, HIGH SPEED CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON

Description: BILATERAL SWITCH, 9V, 1A, TO-92; Peak Repetitive Off State Voltage:-; Gate Trigger Current Max:200µA; Average On State Current:-; On State RMS Current:175mA; Thyristor Case Style:TO-92; No. of Pins:3Pins; Holding Current Max:1.5mA RoHS Compliant: Yes

Description: This 8 channel multiplex switch, which was originally introduced by Fairchild, utilizes PMOS silicon gate technology.

• Power Dissipation: 750 milliwatts
• Operating Ambient Temperature: -55 to 125 C
• Number of Devices in Package: 1
• Features: Bilateral Switch, Commercial, Military, Other

Description: The BS08D-T112 bilateral switch is a silicon planar monolithic integrated circuit with the electrical characteristics of a bilateral thyristor. The device is designed to switch at 7 to 9 volts with a 0.01%/°C temperature coefficient and have excellently matched

• Peak Output Current: 2 amps

Description: ±17V.brbr The analog switches are bilateral, equally matched for AC or bidirectional signals. The ON resistance variation with analog signals is quite low over a ±15V analog input range. The three different devices provide the equivalent of two SPST (DG401) or two SPDT (DG403) relay

• Supply Voltage (V_S): 9 to 40 volts
• Min Operating Current: 0.00001 mA
• t_ON: 150 ns
• t_OFF: 60 ns

Description: SILICON BILATERAL SWITCH (SBS); PEAK REPETITIVE OFF-STATE VOLTAGE, VDRM:-; GATE TRIGGER CURRENT MAX, IGT:100A; CURRENT IT AV:-; ON STATE RMS CURRENT IT(RMS):-; THYRISTOR CASE STYLE:TO-92; NO. OF PINS:3PINS; PRODUCT RANGE:-; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Description: The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or

• I_T(RMS): 1 amps
• V_TM: 3 volts
• Features: Sidac, Silicon Controlled Rectifier (SCR), Triac

Description: The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or

• I_T(RMS): 1 amps
• V_TM: 3 volts
• Features: Sidac, Silicon Controlled Rectifier (SCR), Triac

Description: The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or

• I_T(RMS): 1 amps
• V_TM: 3 volts
• Features: Sidac, Silicon Controlled Rectifier (SCR), Triac

Description: The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or

• I_T(RMS): 1 amps
• V_TM: 3 volts
• Features: Sidac, Silicon Controlled Rectifier (SCR), Triac

Description: (85?) and faster switch time (tsubON/sub 250ns) compared to the DG211 and DG212. Charge injection has been reduced, simplifying sample and hold applications.brbr The improvements in the DG444 series are made possible by using a high voltage silicon-gate process. An epitaxial layer

• Supply Voltage (V_S): 9 to 40 volts
• Min Operating Current: 0.000001 mA
• t_ON: 250 ns
• t_OFF: 170 ns

Description: Teccor brand SIDACs are silicon bilateral voltage triggered switches, with greater power-handling capabilities than standard DIACs. Upon application of a voltage exceeding the breakover voltage point, a SIDAC switches on, through a negative resistance region, to a low on-state voltage.

Description: and faster switch time (tsubON/sub175ns) compared to the DG211 or DG212. Charge injection has been reduced, simplifying sample and hold applications.brbr The improvements in the DG411 series are made possible by using a high voltage silicon-gate process. An epitaxial layer prevents the

• Supply Voltage (V_S): 9 to 40 volts
• Min Operating Current: 0.00000010000000000000001 mA
• t_ON: 175 ns
• t_OFF: 145 ns

Description: Teccor brand SIDACs are silicon bilateral voltage triggered switches, with greater power-handling capabilities than standard DIACs. Upon application of a voltage exceeding the breakover voltage point, a SIDAC switches on, through a negative resistance region, to a low on-state voltage.

Description: Optoisolator, TRIAC Driver Output, Forward Current 60 mA Lamp ballasts Motor controls Static AC power switch Solid state relays Incandescent lamp dimmers The NTE3047 optoisolator consists of a gallium arsenide infrared emitting diode, optically coupled to a silicon bilateral

Description: Optoisolator, TRIAC Driver Output, Forward Current 60 mA Output driver designed for 240 VAC Standard 6-Lead plastic DIP package The NTE3048 consists of a gallium arsenide infrared emitting diode optically coupled to a silicon bilateral switch in an 6-Lead DIP type package. This