Transistor Cross Reference

Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors Series: Automotive, AEC-Q101 Package: Bulk Product Status: Active Current - Collector (Ic)

• I_C(max): 200 milliamps
• Features: Bipolar RF Transistors
• Package Type: SOT3

Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Package: Bulk Product Status: Active Current - Collector (Ic) (Max): 100 mA

• I_C(max): 100 milliamps
• Operating Frequency: 170 MHz
• Output Power: 0.25 watts
• Features: Bipolar RF Transistors

Description: Alternative Parts (Cross-Reference): Cross Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays Packaging: Bulk Part Status: Obsolete Function: Multiple, NonProgrammable Applications: Buck Converters

• Package Type: SOT3

Description: Alternative Parts (Cross-Reference): Cross Manufacturer: MACOM Technology Solutions Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors Package: Tray Product Status: Active Transistor Type: NPN Gain: 9.44dB ~ 9.77dB

• Polarity: NPN
• Package Type: SOT3

Description: These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times

• Isolation Voltage: 3,750 volts
• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: 0 to 70 C
• Input: DC

Description: reference N-Channel MOSFET. The high-side driver is designed to drive a floating N-Channel MOSFET. since the N-Channel is floating, this output needs to be able to handle the high voltages required to fully turn on the high-side MOSFET. An external bootstrap capacitor is used to provide the

• Features: MOSFET

Description: EiceDRIVER™ 1200 V three-phase gate driver with typical 0.35 A source and 0.65 A sink currents in DSO-24 lead package for IGBT (Insulated Gate Biploar Transistor) / SiC(Silicon Carbide) Module and discretes. By utilizing our 1200 V thin-film silicon-on-insulator (SOI) technology, 6ED2231S12T

• Peak Output Current: 0.35 amps
• Supply Voltage: 13 to 20 volts
• Propagation Delay: 650 ns
• Features: Other