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Supplier: ValueTronics International, Inc.
Description: The RBL100-600-4000 is a 4000 watt DC electronic load from Dynaload. Simulate loading on an electronic circuit including power supply testing, ATE applications, LED testing, and more. Additional Features: Voltage: 10 Volts, 50 Volts, 100 Volts Current: 20 Amps, 200 Amps, 600
- Load Bank Type: DC
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Silicon PNP Epitaxial Planar Type (Tr) and CCD Load Device 6-Pin SSMini6-F3-B T/R Product overview: DMR935E10R from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is
- IC(max): -50 milliamps
- VCBO: -24 volts
- PD: 125 milliwatts
- TJ: -55 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Product overview: TPCA8203 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) Product overview: TPC6111 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) Product overview: TPCP8004 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level
- Features: MOSFET
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Supplier: Win Source Electronics
Description: Configuration: Low Side Categories: Integrated Circuits Supplier Device Package: DPAK Status: Obsolete Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Current - Output (Maximum): 6A Popularity: Medium
- TJ: -40 to 150 C
- Features: MOSFET, Other, Power MOSFET
- Polarity: N-Channel
- Package Type: SOT3, TO-251 / TO-252
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Supplier: Win Source Electronics
Description: Configuration: Low Side Categories: Integrated Circuits Supplier Device Package: DPAK Status: Obsolete Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Current - Output (Maximum): 1.7A Popularity: Medium
- TJ: -40 to 150 C
- Features: MOSFET, Other, Power MOSFET
- Polarity: N-Channel
- Package Type: SOT3, TO-251 / TO-252
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Supplier: SAE International
Description: In aerospace applications, it is important to have efficient, small, affordable, and reliable power conversion units with high power density to supply a wide range of loads. Use of wide-band gap devices, such as Silicon Carbide (SiC) and Gallium Nitride (GaN) devices, in power
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Supplier: Infineon Technologies AG
Description: The high-performance clas D stereo amplifier evaluation board is configured to allow for both open- and closed-loop operations, with various standard audio source inputs. The class D output stage of the audio amplifier is implemented with CoolGaN™ power transistors 100 V devices. The
- Category: Development Board
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Supplier: Tektronix, Inc.
Description: semiconductor devices (transistor, BJT, diode, power MOSFET, power semi, LED), electronic circuits and more.
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Supplier: Infineon Technologies AG
Description: The BTS4130QGA is a quad channel Smart High-Side Power Switch. It is embedded in a PG-DSO-20-32package, providing protective functions and diagnostics The power transistor is built by a N-channel power MOSFET with charge pump. The device is monolithically integrated in Smart
- tON: 250,000 ns
- tOFF: 270,000 ns
- Operating Ambient Temperature: -40 to 150 C
- Features: Other
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Supplier: Win Source Electronics
Description: Pad Manufacturer Device Package: 56-HVQFN (8x8) Applications: Buck Converters Standard Package: 1 Technology: DrMOS Operating Supply Voltage: 7 V ~ 7.8 V Interface: PWM Fault Protection: Current Limiting Over Temperature Short Circuit UVLO Output Configuration: Half Bridge Voltage -
- TJ: -40 to 150 C
- Features: MOSFET, Other
- Package Type: SOT3
- Packing Method: Tape Reel
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Supplier: ValueTronics International, Inc.
Description: digital assistants (PDAs), digital cameras, GPS receivers, and notebook computers Design and test of electronic components such as RFIC power amplifiers, RF power transistors, and baseband and wireless chipsets for portable wireless devices Accessories Supplied: CD with
- Type: DC Power Supply
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Supplier: Nexperia B.V.
Description: rate control and Spread Spectrum Clocking (SSC). The NXF6505A/B-Q100 features internal protection features such as current limiting, undervoltage lockout, thermal shutdown, and break-before-make circuitry, ensuring the device operates within safe limits. The device also includes a
- Transistor Grade / Operating Range: Automotive, Industrial
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad lead frame has been incorporated into the standard SOT-23 package to produce a HEXFET® Power MOSFET with the industry's smallest footprint. This package, dubbed the
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Description: This guide applies to self-commutated electronic power converters in which commutation is accomplished by components within the converter. In converters using switching devices that have turn-off capability, such as transistors or gate turn-off thyristors, interruption of the
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Supplier: Visual Sound, Inc.
Description: at least 90dB below rated output and the output regulation is better than 2dB from no load to full load. The HTA125A can drive a variety of load impedances: outputs include 4 ohms, 8 ohms, 25 VCT and 70 volts. It is capable of safely driving any recommended load
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Supplier: Infineon Technologies AG
Description: device gives diagnostic information via a simple error flag. When supplied with VCC = 5 V, the device works in SPI mode. In this mode, detailed failure diagnosis is available via the serial interface. Summary of Features Operating supply voltage 5 V to 28 V Typical RDSon = 150 mΩ for
- Supply Voltage (DC): 5 to 28 volts
- Operating Temperature: -40 to 150 C
- Motor / System: DC Brushed Motor
- Configuration: IC / PCB-Mounted
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Supplier: Infineon Technologies AG
Description: Generation Wide Input Voltage Range from 5V to 40V Peak Current Regulation Very low current consumption (<2uA) in Sleep Mode Integrated power transistor with low saturation voltage Integrated fast freewheeling diode Integrated load current sense resistor Integrated status pull down
- Output Current: 699.9999999999999 milliamps
- Form Factor: Integrated Circuit (IC)
- Features: RoHS Compliant
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Supplier: Laurel Electronics LLC
Description: if a wiring fault occurs, all other devices in the loop loose their 4-20 mA signal. The transmitter(signal conditioner) voltage compliance limit may be exceeded, since the voltage drops across loads in series are additive. The 4-20 mA signal to each load device cannot be
- Operating Temperature: -40 to 158 F
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Supplier: Nexperia B.V.
Description: The 74CB3Q3257-Q100 is a quad high-bandwidth single-pole, double-throw FET bus switch. The device features one select input (S) and one output enable input (OE). The switch is disabled when the OE input is HIGH. An internal charge-pump increases the gate voltage of the NMOS pass
- Applications: Communications
- Features: On-Chip ESD Protection, Other
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Supplier: FX PCB Co., Ltd.
Description: includes inserting and soldering components such as: Resistors Transistors Capacitors and integrated circuits Light PCB assembly includes testing the assembled PCB to ensure the functioning of the device comprehensively. Light PCB assembly is often used in the production of: consumer
- Features: East Asia / Pacific Only, United States Only
- Supplier Capability: PCB Assembly
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More Information Top
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Characterization of the Li(Si)/CoS(2) couple for a high-voltage, high-power thermal battery
The batteries were tested using 1.5-kW and 4.O-kW electronic loads ( Transistor Devices , Inc.).
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Feasibility of a 8 kW/kg, 5 minute thermal battery
Short-Stack Testinq - Two 4 kW electronic loads from Transistor Devices connected in parallel were used in conjunction with an Figure 1.
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Improved performance alternator with fully integrated Switched-Mode Rectifier
The alternator feeds an electronic load ( Transistor Devices Dynaload model DLVP 50-300-3000A), set to constant voltage operation at 13 V.
-
Web-based Electronic Load To Test DC Power Supply
[8] TDI Transistor Devices , “Dynaload Electronic Loads ”, http://www. tdipower.com .
-
A High-Performance Controllable DC Load
[9] TDI Transistor Devices , “Dynaload Electronic Loads ”, http://www. tdipower.com (current Nov. 15, 2006).
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Power quality improvement using DVR in power system
transistors and other electronic devices for correcting load voltage, controlling power flow, converting DC voltage to AC voltage and protecting itself from faults.
-
The photodetected function of silicon photoelectronic lambda negative resistance transistor (PLBT)
When the Si-photo- electronic negative transistor device works as a load , it has two stable output states (bistability characteristics) with the change of the input light signals.
-
Evaluation of the Li(Si)/FeS(2) and Li(Si)/CoS(2) Couples for a High-Voltage, High-Power Thermal Battery
For these tests, it was necessary to use an electronic load bank made up of two Transistor Devices 4 kW modules in parallel, each rated at 400 V.
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Experimental system for current–voltage curve measurement of photovoltaic modules under outdoor conditions
Ultimate transistor electronic load for electrical performance measurement of photovoltaic devices using pulsed solar simulators.
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Z-Source-Converter-Based Energy-Recycling Zero-Voltage Electronic Loads
[8] E. G. Mantingh, W. Zaaiman, and H. A. Ossenbrink, “Ultimate tran- sistor electronic load for electrical performance measurement of photo- voltaic devices using pulsed solar simulators,” in Proc.
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