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Supplier: Accuris
Description: TRANSISTOR, HIGH FREQUENCY, PNP, GERMANIUM
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Supplier: Accuris
Description: TRANSISTOR, PNP, GERMANIUM TYPE 2N2273
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Supplier: Accuris
Description: TRANSISTOR, PNP, GERMANIUM TYPE 2N987
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Supplier: Accuris
Description: TRANSISTOR, NPN, GERMANIUM TYPE 2N2426
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Supplier: VAST STOCK CO., LIMITED
Description: RF Bipolar Transistors NPN Silicn Germanium RF Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: GERMANIUM POWER TRANSISTOR, TO-3. FREE 2 YEAR RADWELL WARRANTY
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Description: NPN WIDEBAND SILICON GERMANIUM R
- Transistor Type: General Purpose BJT
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Supplier: Rochester Electronics
Description: RF Small Signal Bipolar Transistor, X Band Germanium Carbon, NPN
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: GERMANIUM POWER TRANSISTORS
- Transistor Type: Darlington
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Supplier: Infineon Technologies AG
Description: NPN Silicon Germanium RF Transistor Summary of Features For medium power amplifiers and driver stages High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1
- Package Type: Other
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Supplier: Richardson RFPD
Description: The µPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption. The device is packaged in surface
- Package Type: Other
- Transistor Type: General Purpose BJT
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Supplier: RS Components, Ltd.
Description: A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineonâ??s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: RS Components, Ltd.
Description: A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineonâ??s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a
- IC(max): 80 milliamps
- PD: 185 milliwatts
- Package Type: Other
- Polarity: NPN
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Supplier: RS Components, Ltd.
Description: A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineonâ??s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a
- IC(max): 30 milliamps
- PD: 160 milliwatts
- Package Type: Other
- Polarity: NPN
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Supplier: Infineon Technologies AG
Description: Designers who used this product also designed with DPS368 | Pressure sensors for IoT ESD106-B1-W0201 | Low capacitance diodes for ESD protection BFP843F | Low Noise RF Transistors DPS368 | Pressure sensors for IoT ESD
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 50 to 10000 MHz
- Noise Figure: 0.4000 dB
- Nominal Operating Current: 0.0021 to 0.0250 amps
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efficiency. Types of Semiconductors Semiconductors can be classified based on their composition and structure: Elemental Semiconductors: These include silicon and germanium, which are popular due to their four valence electrons. This allows them to (read more)
Browse Microcontrollers (MCU) Datasheets for ODG (Origin Data Global)
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
, is based on the so-called Gigaprocessor-a proprietary chip said to operate in excess of 1-GHz in performance. Consisting of more than 170 million transistors, the Gigaprocessor is optimized for both commercial and technical applications. Atmel offers SiGe RF circuits for walkie-talkies, remote
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Transistors and associated semiconductor devices. A review of progress
Germanium power alloy transistor Germanium power rectifier Silicon power rectifier Silicon power rectifier Type .
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The reliability of semiconductor devices in the bell system
ACTIVATION ENERGYDEVICE TYPE TRANSISTORS GERMANIUM , UNGETTERED .
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Temperature Dependence of Junction Transistor Parameters
GERMANIUM NPN GROWN JUNCTION TRANSISTOR GERMANIUM NPN RATE GROWN JUNCTION TRANSISTOR SILICON NPN GROWN JUNCTION TRANSISTOR .
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From the farm to pioneering with digital control computers: an autobiography
E.C. Hall, “Procurement Specification, Transistor Germanium PNP,” R-212, MIT Instrumentation Laboratory, Cambridge, Mass., 1956.
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Analytical bulletin of the committee of Coordination of the Télécommunications of the French Union
-- PFANN W.-G., SCAFF J.-H. The germanium transistor of the type p (The transistor p-germanium).
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Biomedical Engineering and Design Handbook, Volume 2 > THE DESIGN OF ARTIFICIAL ARMS AND HANDS FOR PROSTHETIC APPLICATIONS
This hand also had the distinction of being the first-to-use transistors ( germanium ) to process the myoelectric control signal (Childress, 1985).
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Standard Handbook of Biomedical Engineering & Design > DESIGN OF ARTIFICIAL ARMS AND HANDS FOR PROSTHETIC APPLICATIONS
This hand also had the distinction of being the first to use transistors ( germanium ) to process the myoelectric control signal (Childress, 1985).