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Supplier: Accuris
Description: TRANSISTOR, PNP, GERMANIUM TYPE 2N987
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Supplier: Accuris
Description: TRANSISTOR, NPN, GERMANIUM TYPE 2N2426
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Supplier: Accuris
Description: TRANSISTOR, PNP, GERMANIUM TYPE 2N2273
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Standards and Technical Documents - TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N2210 -- MIL-S-19500/261Supplier: Accuris
Description: TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N2210
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Supplier: Allied Electronics, Inc.
Description: Germanium Complementaryyy Transistors Medium Power Amplifier 650 mW (Max.) Power Dissipation Designed for use as a medium power amplifier.
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Supplier: Allied Electronics, Inc.
Description: Germanium PNP Transistor Audio Frequency Power Amplifier The NTE121 is a germanium PNP alloy junction transistor in a TO3 type package designed as an audio frequency power output amplifier.
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Supplier: Allied Electronics, Inc.
Description: Germanium Complementaryyy Transistors, Power Output, Driver, Germanium Material Type
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Supplier: Allied Electronics, Inc.
Description: Germanium PNP Transistor Audio Power Amplifier PNP Transistor Polarity Designed for low-power, large signal audio applications.
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Supplier: VAST STOCK CO., LIMITED
Description: RF Bipolar Transistors NPN Silicn Germanium RF Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: GERMANIUM POWER TRANSISTOR, TO-3. FREE 2 YEAR RADWELL WARRANTY
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Low Noise Silicon Germanium Bipolar RF Transistor Product overview: BFP760 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers
- Transistor Type: Bipolar RF Transistors
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: GERMANIUM POWER TRANSISTORS
- Transistor Type: Darlington
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Supplier: Rochester Electronics
Description: RF Small Signal Bipolar Transistor, X Band Germanium Carbon, NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
- Polarity: NPN
- Features: Other, Tape Reel
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Description: NPN WIDEBAND SILICON GERMANIUM R
- VCEO: 2.8 volts
- Output Power: 0.22 watts
- Features: Bulk Pack, Other
- Transistor Type: General Purpose BJT
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Supplier: Infineon Technologies AG
Description: NPN Silicon Germanium RF Transistor Summary of Features For medium power amplifiers and driver stages High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz 70 GHz fT- Silicon Germanium
- Features: Other, Tape Reel
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Supplier: Infineon Technologies AG
Description: Transistors DPS368 | Pressure sensors for IoT ESD106-B1-W0201 | Low capacitance diodes for ESD protection BFP843F | Low Noise RF Transistors The BGA5M1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2200 MHz. The LNA provides 19.3 dB
- Features: Other
- Standards and Certifications: RoHS Compliant
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
, is based on the so-called Gigaprocessor-a proprietary chip said to operate in excess of 1-GHz in performance. Consisting of more than 170 million transistors, the Gigaprocessor is optimized for both commercial and technical applications. Atmel offers SiGe RF circuits for walkie-talkies, remote
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Transistors and associated semiconductor devices. A review of progress
Germanium power alloy transistor Germanium power rectifier Silicon power rectifier Silicon power rectifier Type .
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The reliability of semiconductor devices in the bell system
ACTIVATION ENERGYDEVICE TYPE TRANSISTORS GERMANIUM , UNGETTERED .
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Temperature Dependence of Junction Transistor Parameters
GERMANIUM NPN GROWN JUNCTION TRANSISTOR GERMANIUM NPN RATE GROWN JUNCTION TRANSISTOR SILICON NPN GROWN JUNCTION TRANSISTOR .
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From the farm to pioneering with digital control computers: an autobiography
E.C. Hall, “Procurement Specification, Transistor Germanium PNP,” R-212, MIT Instrumentation Laboratory, Cambridge, Mass., 1956.
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Analytical bulletin of the committee of Coordination of the Télécommunications of the French Union
-- PFANN W.-G., SCAFF J.-H. The germanium transistor of the type p (The transistor p-germanium).
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Biomedical Engineering and Design Handbook, Volume 2 > THE DESIGN OF ARTIFICIAL ARMS AND HANDS FOR PROSTHETIC APPLICATIONS
This hand also had the distinction of being the first-to-use transistors ( germanium ) to process the myoelectric control signal (Childress, 1985).
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Standard Handbook of Biomedical Engineering & Design > DESIGN OF ARTIFICIAL ARMS AND HANDS FOR PROSTHETIC APPLICATIONS
This hand also had the distinction of being the first to use transistors ( germanium ) to process the myoelectric control signal (Childress, 1985).