Products & Services
See also: Categories | Featured Products | Technical Articles | More Information-
Supplier: Radwell International
Description: REPLACEMENT SCREEN, (THIN FILM TRANSISTOR), LIQUID CRYSTAL DISPLAY (LCD), AMORPHOUS SILICON TFT AS A SWITCHING DEVICES, A DRIVER CIRCUIT AND A BACK-LIGHT SYSTEM. 10.4 INCG SREEN, CONTAINS 800 X 600 PIXELS AND CAN DISPLAY UP TO 262,144 COLORS.. FREE 2 YEAR RADWELL WARRANTY
- Screen Type: LCD / Flat Panel
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF POWER TRANSISTOR / RF Transistor Product overview: 75112 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets,
- Transistor Type: Bipolar RF Transistors
- Features: Other
-
Supplier: Radwell International
Description: INSULATOR KIT, FOR T0-3 TRANSISTOR, REPLACEMENT PART, STANDARDIZED. FREE 2 YEAR RADWELL WARRANTY
-
-
Supplier: Linear Systems
Description: The IT130A Series Monolithic Dual, PNP Transistor is a direct replacement for Intersil IT130 Series. It is ideal for Small Signal Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and Tested Die. All Linear
- Transistor Type: General Purpose BJT
- Features: Other
- Polarity: PNP
-
Supplier: Nexperia B.V.
Description: comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement
- hfe: 230
- VCEO: 40 volts
- IC(max): 10,000 milliamps
- PD: 1,300 milliwatts
-
Supplier: Nexperia B.V.
Description: NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. Features and benefits Current gain matching Base-emitter voltage matching Drop-in replacement for standard double
- Polarity: NPN
- Features: Other
-
Supplier: Nexperia B.V.
Description: comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. Applications Power management Load switch Linear mode voltage regulator Backlighting applications Relay replacement Motor drive
- hfe: 230
- VCEO: 40 volts
- IC(max): 6,000 milliamps
- PD: 1,350 milliwatts
-
Supplier: Nexperia B.V.
Description: comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement
- hfe: 170
- VCEO: -100 volts
- IC(max): -6,000 milliamps
- PD: 1,300 milliwatts
-
Description: stress which are essential for the thermal and reliability performances of high end power IC packages, SiC power devices, GaAs and GaN die transistors. The thermal performance of this material is comparable to that of a solder paste product. One component Electrically conductive Good
- Industry: OEM / Industrial
- Cure / Technology: Thermosetting / Crosslinking
-
Description: A comprehensive reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the
-
Supplier: Mini-Circuits
Description: SAV-551+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single
- Minimum Gain: 7.6 dB
- Maximum Gain: 20.9 dB
- Noise Figure: 0.5 to 1.8 dB
- Operating Temperature: -40 to 85 C
-
Supplier: Mini-Circuits
Description: SAV-541+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single
- Minimum Gain: 23.2 dB
- Maximum Gain: 23.2 dB
- Noise Figure: 0.4 dB
- Operating Temperature: -40 to 85 C
-
Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER (SEPTEMBER 30, 2002), PHOTOELECTRIC TRANSISTOR, NPN, 2OUTPUT, 12-24VDC, NO REPLACEMENT. FREE 2 YEAR RADWELL WARRANTY
- Features: Photoelectric Sensors
-
Supplier: Radwell International
Description: I/O MODULE, EXPANSION, MODICON TM3, 32 OUTPUT, TRANSISTOR, PNP, 24 VDC OUTPUT, 100 MA OUTPUT, REPLACEMENT FOR TWDDDO32TK. FREE 2 YEAR RADWELL WARRANTY
- Output: DC Output
-
Supplier: Infineon Technologies AG
Description: CoolGaN™ bidirectional switch 650 V G5 in TOLT, 110 mΩ The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaNTM BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option
- Features: Other
-
Supplier: Infineon Technologies AG
Description: CoolGaN™ bidirectional switch 650 V G5 in TOLT, 55 mΩ The IGLT65R055B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaN™ BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for
- Features: Other
-
Supplier: Richardson RFPD
Description: The 1189/BBM3K5KKO is no longer a stock item from Richardson RFPD. We suggest the 1208/BBM3K5OKO as replacement. The 1208 SKU utilizes 28V GaN transistors and has a wider operating frequency up to 2.7GHz.
-
Supplier: Littelfuse, Inc.
Description: Replacement of discrete components Solid state reliability VDE compatible
- Features: Other
-
Supplier: Littelfuse, Inc.
Description: Replacement of discrete components Solid state reliability VDE compatible
-
Supplier: JiuJiang Ingiant Technology Co., Ltd.
Description: runout of the copper ring shall not exceed 0.1mm. Meanwhile, after the current collector is installed, it shall operate normally under the condition that the end face runout of the copper ring does not exceed 0.2mm. b) When the brush replacement indicator line is exposed from the brush box,
-
Supplier: 4D Systems Pty. Ltd.
Description: animation or images on a 4.3" widescreen display. uLCD-43D (Non Touch version) uLCD-43DT (Resistive Touch version) uLCD-43DCT (Capacitive Touch version) The uLCD-43D (DIABLO16) range was designed to be a drop in replacement for the uLCD-43P (PICASO) range, and features the same mechanical
- Display Type: Graphic Display
- Technology: Thin Film Transistor (TFT)
-
Supplier: ROHM Semiconductor GmbH
Description: This controller synthesizes the optimal driving signal from hall sensor signals, and outputs the synthesized signal to control the external power transistor. The replacement is also easy because of its pin compatibility with BD62012BFS. This controller provides optimum motor drive for
- Supply Voltage (AC): 20 volts
-
Supplier: Infineon Technologies AG
Description: 3.3 kV IHV Enables most compact 1.1 MW liquid cooled inverter, on being 30% smaller than all other devices with similar performance 40% higher performance than next best alternative in similar size, enables inverter frame size jump Standardized IHV 130 x 140mm housing enables 1:1 replacement
- VCES: 3,300 volts
- VCE(on): 2.3 volts
- IC(max): 1,400 amps
- Transistor Type: IGBT
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5A. Search-friendly keywords include memory IC,
- Memory Category: Flash
-
Supplier: Infineon Technologies AG
Description: IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your industry applications. The FZ1200R45HL4 is an 1:1 replacement for the FZ1200R45HL3. Summary of Features High DC stability
- VCES: 4,500 volts
- VCE(on): 2.3 volts
- IC(max): 2,400 amps
- Transistor Type: IGBT
-
Supplier: ROHM Semiconductor USA, LLC
Description: This controller synthesizes the optimal driving signal from hall sensor signals, and outputs the synthesized signal to control the external level shifter and power transistor. The replacement is also easy because of its pin compatibility with BD62011AFS and BD62012AFS. This controller
- Supply Voltage: 15 volts
- Operating Temperature: -40 to 110 C
- Screening Level: Commercial
- Features: Other
-
Supplier: Littelfuse, Inc.
Description: collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of
- VCES: 1,200 volts
- VCE(on): 1.8 volts
- IC(max): 480 amps
- Transistor Type: IGBT
-
Supplier: ROHM Semiconductor USA, LLC
Description: BD62321HFP is full bridge driver for brush motor applications. This IC can operate at a wide range of power-supply voltages (from 6V to 32V), supporting output currents of up to 3A. MOS transistors in the output stage allow for PWM signal control. The replacement is also easy because
- Peak Output Current: 3 amps
- Supply Voltage: 36 volts
- Operating Temperature: -25 to 85 C
- Screening Level: Commercial
-
Supplier: ROHM Semiconductor GmbH
Description: BD62321HFP is full bridge driver for brush motor applications. This IC can operate at a wide range of power-supply voltages (from 6V to 32V), supporting output currents of up to 3A. MOS transistors in the output stage allow for PWM signal control. The replacement is also easy because
- Peak Output Current: 3 amps
- Supply Voltage: 36 volts
- Operating Temperature: -25 to 85 C
- Screening Level: Commercial
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: Power management (dual transistors) Product overview: EMZ2 from ROHM Semiconductor is a Power Management IC for power sequencing, voltage regulation, battery management, load control, and compact electronic system design. It is useful for engineers and buyers comparing datasheets,
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: Low VCE(sat) Transistor(Strobe flash) / Trans GP BJT NPN 20V 5A 1500mW 3-Pin TO-126FP Product overview: 2SD2166 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement
- Memory Category: Flash
-
Supplier: Micropac Industries, Inc.
Description: The 66223 optocoupler consists of an 850 nm GaAlAs LED optically coupled to a photodiode detector driving a radiation tolerant transistor. Test studies have proven this configuration to be even more tolerant to both proton and total dose radiation than configurations using a 660 nm LED. The
- Isolation Voltage: 1,000 volts
- Rise Time: 20 µs
- Collector Emitter Breakdown Voltage: 40 volts
- Operating Temperature: -55 to 125 C
-
Supplier: Hernon Manufacturing, Inc.
Description: perfect replacement for tapes, epoxies, silicones, fasteners and mechanical clips. Typical Applications Typical applications include bonding transformers, transistors and other heat generating electronic components to printed circuit board assemblies or heat sinks.
- Industry: Aerospace, Automotive, Electrical Power / HV, Electronics, Military / Government (MIL-SPEC / GG), OEM / Industrial
- Cure / Technology: Room Temp. Cure / Vulcanizing
- Chemical System: Silicone
- Features: Thermal / Heat Conductive
-
Supplier: Microchip Technology, Inc.
Description: The VRF family of RF MOSFETs includes improved replacements for industry-standard RF transistors. They provide improved ruggedness by increasing the Bvdss over 30 percent from the industry-standard 125V to 170V minimum. Low-cost flangeless packages are another improvement that shows
- Transistor Type: MOSFET
-
Supplier: Microchip Technology, Inc.
Description: The VRF family of RF MOSFETs includes improved replacements for industry-standard RF transistors. They provide improved ruggedness by increasing the Bvdss over 30 percent from the industry-standard 125V to 170V minimum. Low-cost flangeless packages are another improvement that shows
- Transistor Type: MOSFET
Find Suppliers by Category Top
Featured Products Top
-
Rochester Electronics stocks over two-billion units of transistors and gate drive devices, covering 20,000-part numbers. Our inventory is a mix of both active and obsolete devices, with 40% exhibiting lead times greater than 20 weeks.
(read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly® offers a large assortment of box-shaped Sarcon® (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® tubes and sleeves are available in several standard sizes to fit many common transistor types and can be custom ordered to your exact (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
sealing structure optimizes dust-proof and moisture-proof performance, reduces equipment failure rate in daily operation, and lowers the later maintenance cost and replacement frequency for users. 5. Product Core Competitive Advantages (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics
Conduct Research Top
-
Outline of a Transistor
This is the classification based on the differences in the operating features. The classification is made as bipolar transistors and unipolar transistors.
-
History of Transistors
The invention of the transistor that gave an unprecedented shock to the electronics industry at that time was made in the year 1948. That truly was the beginning of the current age of electronics. Thereafter, there have been extremely fast advances in electronics technology which includes computer
-
Understanding transistors
In an NPN transistor, the Base is at positive bias, the Collector at negative bias, and reverse current flows from the Emitter to the Collector. Also, please consider problems arising from usage.
-
What are Transistors? - Categories and Features of Si Transistors
From this section, we will discuss "Si transistors", which however include a number of categories, such as bipolar transistors and MOSFETs, depending on the manufacturing process and device structure.
-
Operation and Modeling of the MOS Transistor
Operation and Modeling of the MOS Transistor. Geared toward advanced electrical engineering students, this extensive text provides a unified treatment of the operation and modeling of the MOS transistor, the key element of most modern microelectronic chips.
-
Quantum Transport: Atom to Transistor
Quantum Transport: Atom to Transistor. Written for senior and graduate students, this book presents the conceptual framework underlying the atomistic theory of matter, emphasizing aspects that relate to current flow, including advanced concepts of non-equilibrium quantum statistical mechanics.
-
JFET Application Note: Reset Transistor
In JFETs designed primarily for silicon drift detectors and Si(Li) detectors,. the reset transistor is configured as shown in Figure 1, with the base. shorted to the source, the collector shorted to the gate, and the emitter. connected to the reset pad. Since the gate-source JFET junction
-
Microwave Field-Effect Transistors: Theory, Design, and Applications
Microwave Field-Effect Transistors: Theory, Design, and Applications. This text covers the use of devices in microwave circuits and includes topics such as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, S-parameter mapping, narrow- and broadband
More Information Top
-
Introduction into the semiconductor-circuit technology
… only the small signal replacement circuit diagram of the bipolar transistor through the to replace a Feldeffekttransistors.
-
Introduction into the semiconductor-circuit technology
… only the small signal replacement circuit diagram of the bipolar transistor through the to replace a Feldeffekttransistors.
-
Introduction into the semiconductor-circuit technology
… only the small signal replacement circuit diagram of the bipolar transistor through the to replace a Feldeffekttransistors.
-
Technical information technology
To the conversion of the output current IA to an output potential, the diode D7 is replaced later in section 1.5.5 with a bipolar transistor .
-
Integrated Digital circuits
Strikes at first sight that are stacked four transistors now, while in the circuit according to image 4.65a only two transistors and a resistance that can be replaced with a transistor superposedly lies.
-
Test trainer electrical engineering
First, only the transistor is replaced .
-
Circuit technology - Similarly and mixed analog/digital
The emitter-base diode can be replaced näherungsweise with a voltage source with 0,7 V (by Si transistors ).
-
Semiconductor devices
by not negligible charge carrier multiplication in the BC diode of an NPN- transistor ( equivalent circuit Abb. 4.32).
Indicates content that may require registration and/or purchase.