Products & Services
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, OUTPUT TRANSISTOR, REPLACEMENT KIT, DISC SPRING, MACHINE SCREWS, FAST-ON RECEPTACLE. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: INSULATOR KIT, FOR T0-3 TRANSISTOR, REPLACEMENT PART, STANDARDIZED. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: REPLACEMENT OF MITSUBISHI QM200HA-H, TRANSISTOR BLOCK. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: REPLACEMENT SCREEN, (THIN FILM TRANSISTOR), LIQUID CRYSTAL DISPLAY (LCD), AMORPHOUS SILICON TFT AS A SWITCHING DEVICES, A DRIVER CIRCUIT AND A BACK-LIGHT SYSTEM. 10.4 INCG SREEN, CONTAINS 800 X 600 PIXELS AND CAN DISPLAY UP TO 262,144 COLORS.. FREE 2 YEAR RADWELL WARRANTY
- Screen Type: LCD / Flat Panel
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Supplier: Linear Systems
Description: The IT120A Series Monolithic Dual, NPN Transistor is a direct replacement for the Intersil IT120 Series. It is ideal for Small Signal Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and Tested Die. All Linear
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: Linear Systems
Description: The IT124 Monolithic Dual, NPN Transistor, Super Beta is a direct replacement for Intersil IT124. It is ideal for Small Signal Transistor, Super Beta, Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, SOIC 8L ROHS, and Tested Die. All Linear Systems
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: Linear Systems
Description: The IT130A Series Monolithic Dual, PNP Transistor is a direct replacement for Intersil IT130 Series. It is ideal for Small Signal Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and Tested Die. All Linear
- Package Type: Other
- Polarity: PNP
- Transistor Type: General Purpose BJT
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation
- Package Type: Other
- Polarity: PNP
- Transistor Type: Power BJT Transistors
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE31C Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation
- Package Type: Other
- Polarity: PNP
- Transistor Type: Power BJT Transistors
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation
- Package Type: Other
- Polarity: PNP
- Transistor Type: Power BJT Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE45H11 Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: Linear Systems
Description: The LS318 Log Conformance, Monolithic Dual, NPN Transistor is a direct replacement for Micro Power Systems MP318 Series. It is ideal for Log Conformance, Transistors Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Description: low stress which are essential for the thermal and reliability performances of high end power IC packages, SiC power devices, GaAs and GaN die transistors. The thermal performance of this material is comparable to that of a solder paste product. One component Electrically conductive Good
- Cure Type / Technology: Thermosetting / Crosslinking
- Industry: OEM / Industrial
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Supplier: Richardson RFPD
Description: The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W (37 dBm) in an industry standard surface mount SOIC plastic package. At frequencies below 3GHz, the NPTB00004A
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: CoolGaN™ bidirectional switch 650 V G5 in TOLT, 55 mO The IGLT65R055B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaN™ BDS 650 V G5 enables efficient voltage blocking in both directions, making it a
- Package Type: Other
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Description: A comprehensive reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room
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Supplier: Microchip Technology, Inc.
Description: The VRF family of RF MOSFETs includes improved replacements for industry-standard RF transistors. They provide improved ruggedness by increasing the Bvdss over 30 percent from the industry-standard 125V to 170V minimum. Low-cost flangeless packages are another improvement that shows
- Transistor Type: MOSFET
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Supplier: Littelfuse, Inc.
Description: requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
- Package Type: TO-220, Other
- Transistor Type: IGBT
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Supplier: 4D Systems Pty. Ltd.
Description: , requiring a brilliance of color, animation or images on a 4.3" widescreen display. uLCD-43D (Non Touch version) uLCD-43DT (Resistive Touch version) uLCD-43DCT (Capacitive Touch version) The uLCD-43D (DIABLO16) range was designed to be a drop in replacement
- Display Type: Graphic Display
- Technology: Thin Film Transistor (TFT)
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Supplier: Infineon Technologies AG
Description: IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your industry applications. The FZ1200R45HL4 is an 1:1 replacement for the FZ1200R45HL3. Summary of Features
- IC(max): 2400 amps
- Package Type: Other
- Packing Method: Tray, Other
- Transistor Grade / Operating Range: Industrial
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Supplier: Littelfuse, Inc.
Description: requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
- IC(max): 480 amps
- Package Type: Other
- VCE(on): 1.7 volts
- VCES: 1200 volts
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Supplier: Richardson RFPD
Description: The 1189/BBM3K5KKO is no longer a stock item from Richardson RFPD. We suggest the 1208/BBM3K5OKO as replacement. The 1208 SKU utilizes 28V GaN transistors and has a wider operating frequency up to 2.7GHz.
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Supplier: ROHM Semiconductor USA, LLC
Description: This controller synthesizes the optimal driving signal from hall sensor signals, and outputs the synthesized signal to control the external level shifter and power transistor. The replacement is also easy because of its pin compatibility with BD62011AFS and BD62012AFS. This controller
- Driver Type: Other
- IC Package Type: SSOP, Other
- Operating Temperature: -40 to 110 C
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor GmbH
Description: BD62321HFP is full bridge driver for brush motor applications. This IC can operate at a wide range of power-supply voltages (from 6V to 32V), supporting output currents of up to 3A. MOS transistors in the output stage allow for PWM signal control. The replacement is also easy because
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Operating Temperature: -25 to 85 C
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor GmbH
Description: This controller synthesizes the optimal driving signal from hall sensor signals, and outputs the synthesized signal to control the external power transistor. The replacement is also easy because of its pin compatibility with BD62012BFS. This controller provides optimum motor drive for
- Supply Voltage (AC): 20 volts
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Supplier: Infineon Technologies AG
Description: The BTS5016SDA is a one channel high-side power switch in PG-TO252-5-11 package providing embedded protective functions The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS5016SDA has a
- Operating Ambient Temperature: -40 to 150 C
- Package Type: Other
- RoHS Compliant: Yes
- tOFF: 500000 ns
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Supplier: Infineon Technologies AG
Description: Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available Benefits Standard pinout allows for drop in replacement Industry standard qualification level
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: 150 C
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65170-21 is being discontinued and is not recommended for new designs. The suggested replacement is SKY66295-21 Skyworks SKY65170-21 is a fully-matched, 0.5 W Power Amplifier (PA) with high efficiency, designed for use in the 860 to 960 MHz band. The device is
- Amplifier Type: Power Amplifier
- Frequency Range: 860 to 960 MHz
- Maximum Gain: 32 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Micropac Industries, Inc.
Description: The 52149/52174, which is a replacement for the 79HG, is an adjustable 4-terminal voltage regulator capable of supplying in excess of 5 A over a –24 V to -2.55 V output range. This Hybrid Voltage Regulator has been designed with all the inherent characteristics of the monolithic
- Dropout Voltage (VD): -2.2 volts
- IC Package Type: TO-3
- Operating Temperature: 0.0 to 125 C
- Output Current (IOUT): 5 amps
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Supplier: OMRON Automation and Safety
Description: This modular temperature controller consists of 22.5mm-wide modules with 2 channels per module. Using RS-485 you can build up to a maximum of 32 control loops. The modularity of E5ZN enables easy exchange and replacement of the individual modules. Output: SSR, transistor, current
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Supplier: Micropac Industries, Inc.
Description: The 66223 optocoupler consists of an 850 nm GaAlAs LED optically coupled to a photodiode detector driving a radiation tolerant transistor. Test studies have proven this configuration to be even more tolerant to both proton and total dose radiation than configurations using a 660 nm LED. The
- Collector Emitter Breakdown Voltage: 40 volts
- Isolation Voltage: 1000 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
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Supplier: RS Components, Ltd.
Description: This series consists of Midas Displaysâ?? standard thin film transistor (TFT) push products for industrial applications. Available in a variety of resolutions, the full colour (RGB) TFT displays come in landscape and portrait versions. Standard TFTs are transmissive mode and
- Backlight: Light Emitting Diode (LED)
- Display Type: Graphic Display
- Viewing Area Height: 71.04 mm
- Viewing Area Width: 53.28 mm
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Supplier: RS Components, Ltd.
Description: This series consists of Midas Displaysâ?? standard thin film transistor (TFT) push products for industrial applications. Available in a variety of resolutions, the full colour (RGB) TFT displays come in landscape and portrait versions. Standard TFTs are transmissive mode and
- Color: Color
- Diagonal Screen Size: 3.5 inch
- Input Types: Serial Interface, Other Input Types
- Performance: Uses DC Voltage
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Supplier: RS Components, Ltd.
Description: . The L series of slotted optical switches are PCB mounted whilst the W series come with 26 AWG wires. Suitable applications for the OPB900 to OPB913 series include, mechanical switch replacements, speed indication, mechanical limit indication, edge sensing and object sensing. Output Device
- Body: Slot
- Operating Temperature: 158 F
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Featured Products Top
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Rochester Electronics stocks over two-billion units of transistors and gate drive devices, covering 20,000-part numbers. Our inventory is a mix of both active and obsolete devices, with 40% exhibiting lead times greater than 20 weeks.
(read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly® offers a large assortment of box-shaped Sarcon® (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® tubes and sleeves are available in several standard sizes to fit many common transistor types and can be custom ordered to your exact (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics
Conduct Research Top
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Outline of a Transistor
This is the classification based on the differences in the operating features. The classification is made as bipolar transistors and unipolar transistors.
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History of Transistors
The invention of the transistor that gave an unprecedented shock to the electronics industry at that time was made in the year 1948. That truly was the beginning of the current age of electronics. Thereafter, there have been extremely fast advances in electronics technology which includes computer
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Understanding transistors
In an NPN transistor, the Base is at positive bias, the Collector at negative bias, and reverse current flows from the Emitter to the Collector. Also, please consider problems arising from usage.
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What are Transistors? - Categories and Features of Si Transistors
From this section, we will discuss "Si transistors", which however include a number of categories, such as bipolar transistors and MOSFETs, depending on the manufacturing process and device structure.
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Operation and Modeling of the MOS Transistor
Operation and Modeling of the MOS Transistor. Geared toward advanced electrical engineering students, this extensive text provides a unified treatment of the operation and modeling of the MOS transistor, the key element of most modern microelectronic chips.
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Quantum Transport: Atom to Transistor
Quantum Transport: Atom to Transistor. Written for senior and graduate students, this book presents the conceptual framework underlying the atomistic theory of matter, emphasizing aspects that relate to current flow, including advanced concepts of non-equilibrium quantum statistical mechanics.
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JFET Application Note: Reset Transistor
In JFETs designed primarily for silicon drift detectors and Si(Li) detectors,. the reset transistor is configured as shown in Figure 1, with the base. shorted to the source, the collector shorted to the gate, and the emitter. connected to the reset pad. Since the gate-source JFET junction
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Microwave Field-Effect Transistors: Theory, Design, and Applications
Microwave Field-Effect Transistors: Theory, Design, and Applications. This text covers the use of devices in microwave circuits and includes topics such as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, S-parameter mapping, narrow- and broadband
More Information Top
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Introduction into the semiconductor-circuit technology
… only the small signal replacement circuit diagram of the bipolar transistor through the to replace a Feldeffekttransistors.
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Introduction into the semiconductor-circuit technology
… only the small signal replacement circuit diagram of the bipolar transistor through the to replace a Feldeffekttransistors.
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Introduction into the semiconductor-circuit technology
… only the small signal replacement circuit diagram of the bipolar transistor through the to replace a Feldeffekttransistors.
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Technical information technology
To the conversion of the output current IA to an output potential, the diode D7 is replaced later in section 1.5.5 with a bipolar transistor .
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Integrated Digital circuits
Strikes at first sight that are stacked four transistors now, while in the circuit according to image 4.65a only two transistors and a resistance that can be replaced with a transistor superposedly lies.
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Test trainer electrical engineering
First, only the transistor is replaced .
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Circuit technology - Similarly and mixed analog/digital
The emitter-base diode can be replaced näherungsweise with a voltage source with 0,7 V (by Si transistors ).
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Semiconductor devices
by not negligible charge carrier multiplication in the BC diode of an NPN- transistor ( equivalent circuit Abb. 4.32).
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