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Supplier: SemiGen
Description: The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide
- Diode Applications: Switching, Other
- Diode Type: PIN Diodes
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Supplier: Richardson RFPD
Description: themselves exhibit low series resistance, low capacitance, and extremely fast switching speed. The ultra low capacitance of this device allows use through W-band (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in
- Diode Type: PIN Diodes, RF Diodes
- VR: 90 volts
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Supplier: Richardson RFPD
Description: epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit low series resistance, 4?, low capacitance, 28fF, and an extremely fast switching speed of 5ns. They are fully passivated with silicon nitride and have an
- Diode Type: PIN Diodes, RF Diodes
- VR: 50 volts
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Supplier: RS Components, Ltd.
Description: Diode Switching 1KV 0.5A 2-Pin Sub SMA - Discrete Semiconductors - Rectifier & Schottky Diodes
- IF: 500 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
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Supplier: RS Components, Ltd.
Description: Diode Switching 200V 1A 2-Pin Sub SMA - Discrete Semiconductors - Rectifier & Schottky Diodes
- IF: 1000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
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Supplier: RS Components, Ltd.
Description: Diode Switching 600V 1A 2-Pin Sub SMA - Discrete Semiconductors - Rectifier & Schottky Diodes
- IF: 1000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
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Supplier: RS Components, Ltd.
Description: Diode Switching 600V 0.5A 2-Pin Sub SMA - Discrete Semiconductors - Rectifier & Schottky Diodes
- IF: 500 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
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Supplier: Nexperia B.V.
Description: Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package
- Diode Applications: Switching, Power Diode
- Diode Type: Schottky Barrier Diodes
- IR: 60000 mA
- RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic
- Applications: Switching
- IFSM: 300 amps
- Package Type: DPAK, Other
- RoHS Compliant: Yes
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Supplier: Richardson RFPD
Description: isolation magnitude. The ultra low capacitance of the PIN diodes makes it ideal for usage in lower loss and higher isolation microwave and millimeter wave switch designs through 70 GHz. The lower series resistance of the AlGaAs diodes reduces the total insertion
- Actuator Type: SPST, Other
- Frequency Range: 50 to 70000 MHz
- Insertion Loss: 1 dB
- Isolation (Port to Port): 46 dB
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Supplier: Daburn Electronics & Cable
Description: With an efficiency of up to 91%, our 30 watt single and dual output DC-DC converter features a low profile package of 1.0" x 2.0" x 0.4", an ultra wide input voltage and operating temperatures up to 85°C. This epoxy-encapsulated design meets UL60950-1, EN-60950-1 and IEC60950-1 standards and
- DC Input Current: 0.0150 to 0.7440 amps
- DC Input Voltage: 24 to 48 volts
- DC Output Current: -3 to 3 amps
- DC Output Power: 30 watts
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Supplier: Vincotech GmbH
Description: With SiC PFC Diode Kelvin Emitter for improved switching performance Open Emitter configuration Rectifier + Dual Booster + H-Bridge Temperature sensor Extremly low losses Ultra-fast body diode Improved reverse diode commutation
- Configuration: Power Factor Correction (PFC)
- Output Current: 20 amps
- Output Voltage: 600 volts
- Technology: Other / Specialty Technology
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Supplier: Richardson RFPD
Description: V Ultra Field Stop IGBTs Low Reverse Recovery and Fast Switching SiC Diodes Low Inductive Layout Press-fit Pins / Solder Pins Thermistor Applications Solar Inverter ESS
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: 1200 V, 75 A IGBT with anti-parallel diode in TO-247 PLUS package Hard-switching 1200 V, 75 A HighSpeed 3 H3 in TO-247 PLUS package with soft, fast recovery full current rated anti-parallel emitter controlled diode. Key features of the TO-247PLUS package are higher
- Package Type: TO-247, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Switching Speed: 18 to 60 kHz
- VCE(on): 1200 volts
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Supplier: Infineon Technologies AG
Description: bootstrap voltage (VB node) of + 1225 V Operating voltages (VS node) upto + 1200 V Negative VS transient voltage immunity of 100 V with repetitive 700 ns pulses 2.3 A / 2.3 A peak output source / sink current capability Integrated ultra-fast over
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 2.3 amps
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Supplier: Infineon Technologies AG
Description: (Modular Application Design Kit), such as Eval-M1- 099M-C for motor control. Summary of Features Infineon Thin-Film-SOI technology Fully operational to +1200 V Integrated Ultra-fast Bootstrap Diode and OCP Floating channel designed for
- Category: Development Board
- Supported System: Other
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Supplier: Infineon Technologies AG
Description: and creepage. Differential sensor principle ensures superior magnetic stray field suppression Two independent fast Over-Current Detection (OCD) pins with configurable thresholds enable protection mechanisms for power circuitry (typical 0,7µs) TS:
- Accuracy: 2 %FS
- Approvals: RoHS, UL
- Current Type: AC Current, DC Current
- Input Voltage: 3.1 volts
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Supplier: Renesas Electronics Corporation
Description: Enhanced Active Pulse Positioning (EAPP) modulation scheme to achieve extremely fast transient response with fewer output capacitors. The ISL6364A is designed to be compliant to Intel VR12/IMVP7 specifications. It accurately monitors the load current via the IMON pin and reports this
- Features: Input Overcurrent Protection
- IC Package Type: Other
- Input Voltage (VIN): 4.75 to 5.25 volts
- Output Voltage (Volt): 0.2500 to 1.52 volts
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Supplier: Microchip Technology, Inc.
Description: .5V to 26V, without requiring additional cooling. The MIC45212-1 uses HyperLight Load® (HLL) while the MIC45212-2 uses Hyper Speed Control™ architecture, which enables ultra-fast load transient response, allowing for a reduction of output capacitance. The MIC45212 offers 1% output
- IC Package Type: Other
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voltage diode. The fast recovery time and 16kV blocking voltage makes it useful in high voltage running at 50kHz and higher. The diodes are hermetically sealed — making them suitable for industrial environments — small, and extremely reliable. The fast recovery times (read more)
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voltage diodes range from 2kV-20kV, 5mA-2000mA, 30ns-3000ns Trr. Ultra-fast reverse recovery times of 30ns maximum make them great for high voltage switching power supplies where speed is standard. Contact Us for more (read more)
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Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
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) protection can be independently programmed between 5.5 V and 60 V. Additionally, the device has an internal default undervoltage lockout (UVLO) rising threshold set at 4.2 V (typ). The device is enabled or disabled through the EN pin by a main supervisory system, offering a switch operation (read more)
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diode with ultra-low reverse recovery High temperature operation (TJ = 175 °C) Kelvin source pin Industry standard through-hold & SMT packages Key benefits Improves system efficiency with (read more)
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suitable for precision signal switching and amplifying applications in +1V to +10V systems where low input capacitance and fast switching speed are desired. They offer high input impedance, low input bias current, and negative current temperature coefficient. This is a dual version of the quad (read more)
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V, guaranteeing exceptional accuracy. Ultra-low minimum operating voltage (< 0.2V) and operating current (< 1nA) for optimal energy efficiency. Matched transconductance and output conductance, ensuring optimized performance. Designed for switching and amplifying (read more)
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custom test software and help with integrated RF system testing. We can design and provide an RF switching network specific to your requirements; electro-mechanical, solid-state, or PIN diode-based. If the S-parameter measurement fixture involves challenging conditions for repeatability and accuracy we (read more)
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State of the art in antenna measurements in Europe
This instrumentation is based on ultra - fast PIN diode switches , which create a pulse on the transmit side and open the receiver during a small time slot, just enough to pass the direct signal and thus cancelwall reflections and multiplereflections (EADS Astrium…
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An N ‐bit digitally variable ultra‐wideband pulse generator for GPR and UWB applications
The SRDs used in the circuit are series MSD700-75 and the PIN diodes are Ultra - Fast Switching series MMP7010-CS127 Low-High Power, both manufactured by Micrometrics Inc.
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BKC 1N4148 Series Datasheets. 1N3595-1, 1N4447, 1N4150-1, 1N914A, 1N4153-1, 1N916A, 1N3595, 1N4449, 1N4154-1, 1N4149, 1N914B, 1N4148-1, 1N4446, 1N916B, 1N5186,...
75 V, 500 mW high conductance ultra fast switching diode in 2- pin DO-35 package.
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BKC 1N914 Series Datasheets. 1N4447, 1N914A, 1N916A, 1N914, 1N4449, 1N4149, 1N914B, 1N4446, 1N916B, 1N4148 Datasheet.
75 V, 500 mW high conductance ultra fast switching diode in 2- pin DO-35 package.
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Ultra Fast Rectifiers Transient Voltage Supressors Powermite Pin Diode and Nano Second SCR Switch Pin Diodes .
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GC4943-12 | Microsemi
Semiconductor mesa beam lead PIN diodes are designed for very low inductance low resistance and moderately low capacitance with ultra fast switching characteristics.
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Rectifier diodes BYV72EW series
ultrafast, rugged
Dual, ultra - fast , epitaxial rectifier PIN DESCRIPTION diodes intended for use as output rectifiers in high frequency switched 1 anode 1 mode power supplies.
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CONTROL DEVICES – BEAMLEAD PIN DIODES
Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics.
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Research of efficient DC-DC converter based on SiC power devices and ZVS soft switches
Figure 2 shows the comparison of the reverse recovery characteristics and switching efficiency among the SiC Schottky Diode SDB06560 that Infineon produced, Si pin diode and ultra - fast pin diode.
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All-silicon optoelectronic modulator with 1 GHz switching capability
In this Letter we show how, by combining the interference obtained with a distributed Bragg reflector together with fast injection of carriers in a pin diode [4,51 can lead to ultra -GHz switching speed if careful optimisation of the geometries and…