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Supplier: SemiGen
Description: The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide
- Features: Other, PIN Diodes, Switching
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Supplier: Richardson RFPD
Description: themselves exhibit low series resistance, low capacitance, and extremely fast switching speed. The ultra low capacitance of this device allows use through W-band (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in
- VR: 90 volts
- Operating Frequency: 100 to 18,000 MHz
- CT: 0.026 pF
- Features: Other, PIN Diodes, RF Diodes, Single
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Supplier: RS Components, Ltd.
Description: Diode Ultra Fast Recover 1KV 2-Pin DO41
- trr: 75 ns
- Features: Other, Rectifier Diode, Schottky Barrier Diodes, Switching
- RoHS Compliant: RoHS Compliant
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Supplier: Allied Electronics, Inc.
Description: significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. Features: Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at
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Supplier: Allied Electronics, Inc.
Description: significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. Features: Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Ultra fast low-loss rectifier / Diode Switching 200V 2A 2-Pin MELF Product overview: BYD127 from NXP Semiconductors is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit
- Features: Rectifier Diode
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Ultra-fast soft-recovery controlled avalanche rectifiers / Diode Switching 600V 1A 2-Pin MELF Product overview: BYD57J from NXP Semiconductors is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and
- Features: Rectifier Diode
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Ultra fast low-loss controlled avalanche rectifiers / Diode Switching 100V 1A 2-Pin GALF Product overview: BYD73B from NXP Semiconductors is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and
- Features: Rectifier Diode
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Supplier: Nexperia B.V.
Description: Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package offers
- VF: 1.8 to 0.0018 volts
- IF: 10 mA
- IR: 0.00018 mA
- Tj: 175 C
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Supplier: Nexperia B.V.
Description: Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic
- VF: 1.8 to 0.0018 volts
- IF: 20 mA
- IR: 0.00018 mA
- Tj: 175 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Ultra fast low-loss controlled avalanche rectifiers / Diode Switching 600V 2A 2-Pin SMA Product overview: BYG80J from NXP Semiconductors is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and
- Features: Rectifier Diode
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Supplier: Nexperia B.V.
Description: Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic
- VF: 1.8 to 0.0018 volts
- IF: 6 mA
- IR: 0.00018 mA
- Tj: 175 C
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Supplier: Nexperia B.V.
Description: Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package
- VF: 1.8 to 0.0018 volts
- IF: 10 mA
- IR: 0.00006 mA
- Tj: 175 C
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Supplier: Richardson RFPD
Description: isolation magnitude. The ultra low capacitance of the PIN diodes makes it ideal for usage in lower loss and higher isolation microwave and millimeter wave switch designs through 70 GHz. The lower series resistance of the AlGaAs diodes reduces the total insertion loss and
- Frequency Range: 50 to 70,000 MHz
- Insertion Loss: 1 dB
- Isolation (Port to Port): 46 dB
- Switching Speed: 0.00001 ms
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Supplier: Vincotech GmbH
Description: With SiC PFC Diode Kelvin Emitter for improved switching performance Open Emitter configuration Rectifier + Dual Booster + H-Bridge Temperature sensor Extremly low losses Ultra-fast body diode Improved reverse diode commutation ruggedness Recommended for
- Output Voltage: 600 volts
- Output Current: 20 amps
- Features: Other / Specialty Technology
- Configuration: Power Factor Correction (PFC)
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Supplier: Daburn Electronics & Cable
Description: With an efficiency of up to 91%, our 30 watt single and dual output DC-DC converter features a low profile package of 1.0" x 2.0" x 0.4", an ultra wide input voltage and operating temperatures up to 85°C. This epoxy-encapsulated design meets UL60950-1, EN-60950-1 and IEC60950-1 standards and
- DC Input Voltage: 24 to 48 volts
- DC Input Current: 0.015 to 0.744 amps
- DC Output Voltage: -15 to 15 volts
- DC Output Current: -3 to 3 amps
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Supplier: Daburn Electronics & Cable
Description: protection Zener diode clamp, 3.3 Vout: 3.9% Zener diode clamp, 5 Vout: 6.2% Zener diode clamp, 12 Vout: 15% Zener diode clamp, 15 Vout: 20% Zener diode clamp, 25 Vout: 30% Over load protection: 150% Short circuit protection: continuous, automatics recovery GENERAL
- DC Input Voltage: 24 to 110 volts
- DC Input Current: 0.01 to 0.015 amps
- DC Output Voltage: -24 to 24 volts
- DC Output Current: -1.666 to 10 amps
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Supplier: Infineon Technologies AG
Description: 1200 V, 75 A IGBT with anti-parallel diode in TO-247 PLUS package Hard-switching 1200 V, 75 A HighSpeed 3 H3 in TO-247 PLUS package with soft, fast recovery full current rated anti-parallel emitter controlled diode. Key features of the TO-247PLUS package are higher
- VCE(on): 1,200 volts
- Switching Speed: 18 to 60 kHz
- tr: 32 ns
- tf: 32 ns
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Supplier: Newport MKS
Description: internal 50 Ω termination. As the responsivity data is applicable to the diode only, the detector output should be determined based on 1/2 the responsivity of that shown on graph. It is a low-cost solution for ultra-fast measurements up to a 12.5 GHz bandwidth. These detectors
- Receiver Rise Time: 0.03 ns
- Bandwidth: 0 to 12,500 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Newport MKS
Description: output. The photodetectors have an internal 50 Ω termination. As the responsivity data is applicable to the diode only, the detector output should be determined based on 1/2 the responsivity of that shown on graph. It is a low-cost solution for ultra-fast measurements up to a 15
- Receiver Rise Time: 0.025 ns
- Bandwidth: 0 to 15,000 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Newport MKS
Description: of high speed applications such as viewing of Q-switched, mode-locked, or rapidly modulated laser signals and picosecond laser alignment. It is a low-cost solution for ultra-fast measurements up to a 12.5 GHz bandwidth. These detectors are suitable for applications where detector rise
- Receiver Rise Time: 0.03 ns
- Bandwidth: 0 to 12,500 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Richardson RFPD
Description: control over all operating conditions. Features Low RDS(ON) over temperature Low device capacitances Kelvin source pin High temperature operation (TJ = 175 C) Fast diode with ultra low reverse recovery Cost effective Benefits Improves system efficiency with lower
- Category: Development Board
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Supplier: Infineon Technologies AG
Description: than 1 us Integrated ultra-fast, low resistance bootstrap diode Integrated dead-time and shoot-through prevention logic Enable, Fault, and programmable Fault clear RFE input Logic operational up to –8 V on VS Pin Independent per channel under voltage lockout (UVLO) 25 V
- Peak Output Current: 2.3 amps
- Supply Voltage: -1 to 25 volts
- Propagation Delay: 350 ns
- Driver Type: High-side Gate Driver, Low-side Gate Driver
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Supplier: Infineon Technologies AG
Description: Less than 1 us over-current sens to output shutdown Integrated ultra-fast, low resistance bootstrap diode Integrated dead-time and shoot-through prevention logic Enable, Fault, and programmable Fault clear RFE input Logic operational up to –8 V on VS Pin Independent per
- Peak Output Current: 2.3 amps
- Supply Voltage: -1 to 25 volts
- Propagation Delay: 500 ns
- Driver Type: Dual Gate Driver (Half-bridge)
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Supplier: Infineon Technologies AG
Description: 2 A sink current capability Integrated Short Circuit Clamp (SCC) function Integrated ultra-fast, low resistance bootstrap diode Enable, Fault, and programmable Fault clear RFE input Logic operational up to –8 V on VS Pin Independent per channel undervoltage lockout (UVLO)
- Peak Output Current: 2.3 amps
- Supply Voltage: -1 to 25 volts
- Propagation Delay: 350 ns
- Driver Type: High-side Gate Driver, Low-side Gate Driver
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Supplier: Microchip Technology, Inc.
Description: to 26V, without requiring additional cooling. The MIC45208-1 uses HyperLight Load® (HLL) while the MIC45208-2 uses Hyper Speed Control™ (HSC) architecture, which enables ultra-fast load transient response, allowing for a reduction of output capacitance. The MIC45208 offers 1% output
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: Positioning (EAPP) modulation scheme to achieve extremely fast transient response with fewer output capacitors.brbr The ISL6366 is designed to be compliant to Intel VR12/IMVP7 specifications. It accurately monitors the load current via the IMON pin and reports this information via the
- Output Voltage (Volt): 0.25 to 1.52 volts
- Input Voltage (VIN): 4.75 to 5.25 volts
- Features: Input Overcurrent Protection, Other
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Supplier: Renesas Electronics Corporation
Description: controller enters 1- or 2-phase operation in low power mode (PSI1); in the ultra low power mode (PSI2, PSI3), it operates in single phase with diode emulation option. In low power modes, the magnetic core and switching losses are significantly reduced, yielding high efficiency
- Output Voltage (Volt): 0.25 to 3.04 volts
- Input Voltage (VIN): 4.5 to 14 volts
- Features: Input Overcurrent Protection, Other
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Supplier: Microchip Technology, Inc.
Description: to 26V, without requiring additional cooling. The MIC45205-1 uses HyperLight Load® (HLL) MIC45205-2 uses Hyper Speed Control™ architecture which enables ultra-fast load transient response, allowing for a reduction of output capacitance. The MIC45205 offers 1% output accuracy that can
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: to 26V, without requiring additional cooling. The MIC45212-1 uses HyperLight Load® (HLL) while the MIC45212-2 uses Hyper Speed Control™ architecture, which enables ultra-fast load transient response, allowing for a reduction of output capacitance. The MIC45212 offers 1% output accuracy
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: 20V without requiring additional cooling. The MIC45116-1 uses HyperLight Load® (HLL) which maintains high efficiency under light load conditions by transitioning to variable frequency, discontinuous-mode operation. The MIC45116-2 uses Hyper Speed Control® architecture which enables
- Features: Other
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Supplier: Richardson RFPD
Description: ultra-low-loss, rugged Trench IGBT technology used to fabricate the silicon switch and optimized diodes. Features Special treated Cu-baseplate, controlled bow and reduced airgap to heat sink Spacers for substrate solder, homogeneous solder thickness and less delamination Press-fit
- Features: IGBT, Other
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State of the art in antenna measurements in Europe
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An N ‐bit digitally variable ultra‐wideband pulse generator for GPR and UWB applications
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BKC 1N4148 Series Datasheets. 1N3595-1, 1N4447, 1N4150-1, 1N914A, 1N4153-1, 1N916A, 1N3595, 1N4449, 1N4154-1, 1N4149, 1N914B, 1N4148-1, 1N4446, 1N916B, 1N5186,...
75 V, 500 mW high conductance ultra fast switching diode in 2- pin DO-35 package.
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BKC 1N914 Series Datasheets. 1N4447, 1N914A, 1N916A, 1N914, 1N4449, 1N4149, 1N914B, 1N4446, 1N916B, 1N4148 Datasheet.
75 V, 500 mW high conductance ultra fast switching diode in 2- pin DO-35 package.
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GC4943-12 | Microsemi
Semiconductor mesa beam lead PIN diodes are designed for very low inductance low resistance and moderately low capacitance with ultra fast switching characteristics.
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Rectifier diodes BYV72EW series
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Research of efficient DC-DC converter based on SiC power devices and ZVS soft switches
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All-silicon optoelectronic modulator with 1 GHz switching capability
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