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Supplier: ROHM Semiconductor GmbH
Description: RB715FM-40 is a ultra low VF schottky barrier diode, suitable for high speed switching. This is a highly reliable product.
- Diode Type: Schottky Barrier Diodes
- IF: 1 mA
- RoHS Compliant: Yes
- VF: 0.3700 volts
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Supplier: ROHM Semiconductor GmbH
Description: RB715FM-40FH is a ultra low VF schottky barrier diode, suitable for high speed switching. This is a highly reliable product for automotive.
- Diode Type: Schottky Barrier Diodes
- IF: 1 mA
- RoHS Compliant: Yes
- VF: 0.3700 volts
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Supplier: Nexperia B.V.
Description: Ultra small SMD plastic package Low leakage current Suitable for Automatic Optical Inspection (AOI) of solder joint Applications Ultra high-speed switching Voltage clamping Protection circuits Low voltage rectification Blocking diodes Low power consumption applications
- Applications: Rectifier Diode, Switching
- IF: 200 mA
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: Ultra small SMD plastic package Low forward voltage Suitable for Automatic Optical Inspection (AOI) of solder joint Applications Ultra high-speed switching Voltage clamping Protection circuits Low voltage rectification Blocking diodes Low power consumption applications
- Applications: Rectifier Diode, Switching
- IF: 200 mA
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: General-purpose Schottky diode in an ultra small DFN1006BD-2 (SOD882BD) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits Forward current: IF = 0.2 A Reverse voltage: VR = 30 V
- Applications: Rectifier Diode, Switching
- IF: 200 mA
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small SMD plastic package. Features and benefits Low forward voltage Ultra small SMD
- Diode Applications: Switching, Protector
- Diode Type: Schottky Barrier Diodes
- IF: 200 mA
- IR: 2000 mA
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Supplier: Richardson RFPD
Description: HIGH VOLTAGE SCHOTTKY DIODE. Applications: Anti-Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), Induction Heating, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery Characteristics,
- IF: 95000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- trr: 43 ns
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Supplier: RS Components, Ltd.
Description: The Infineon range of diodes cover several types from general purpose high switching types, PowerBLOCK Modules and silicon ultra-soft diodes. There is through hole, surface or panel-mounted versions available. The general purpose diodes are used in applications
- Applications: Rectifier Diode, Switching
- IF: 52300 mA
- Package Type: TO-220, Other
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Supplier: Infineon Technologies AG
Description: Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode Summary of Features • ESD / transient protection of high speed data lines according to: – IEC61000-4-2 (ESD): ±18 kV (air/contact) – IEC61000-4-4 (EFT): 50 A (5/50 ns
- Diode Applications: Protector
- IR: 1.00E-6 to 2.00E-5 mA
- RoHS Compliant: Yes
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Supplier: RS Components, Ltd.
Description: The Infineon range of diodes cover several types from general purpose high switching types, PowerBLOCK Modules and silicon ultra-soft diodes. There is through hole, surface or panel-mounted versions available. The general purpose diodes are used in applications
- Diode Applications: Rectifier Diode, Switching
- Diode Type: General Purpose (PN Junction Diodes), Schottky Barrier Diodes
- IF: 52300 mA
- VR: 600 volts
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Supplier: Richardson RFPD
Description: Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance
- Package Type: Other
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Supplier: Richardson RFPD
Description: Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: 650 V, 2.5 A high current high-side and low-side gate driver IC with integrated bootstrap diode in DSO-14 package 650 V high and low side gate driver with high current, and high speed to drive MOSFET and IGBT, with typical 2.5 A sink and source
- Driver Type: High-side Gate Driver, Low-side Gate Driver
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 2.5 amps
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Supplier: Infineon Technologies AG
Description: 200V Dual Smart Secondary Side High Speed SR Controller in a 8-Lead SOIC Package. Benefits Secondary-side high speed controller for synchronous rectification in resonant half bridge topologies 200V proprietary IC technology Max 500KHz switching frequency
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Supplier: Infineon Technologies AG
Description: 650 V, 75 A IGBT with anti-parallel diode in TO-247 package Hard-switching 650 V, 75 A high speed TRENCHSTOP™ 5 S5 IGBT in TO-247-4 package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings
- Package Type: TO-247, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Switching Speed: 15 to 40 kHz
- VCE(on): 650 volts
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This portfolio is designed to protect high-speed data lines such as USB 3.2, HDMI 2.0, LVDS, automotive A/V Monitors, displays and cameras. Additionally, this portfolio also aims to address the upcoming high-speed video-links as well as the OPEN Alliance MGbit ethernet applications. (read more)
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voltage diodes range from 2kV-20kV, 5mA-2000mA, 30ns-3000ns Trr. Ultra-fast reverse recovery times of 30ns maximum make them great for high voltage switching power supplies where speed is standard. Contact Us for more (read more)
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New type of high-speed pulse radar based on the NRD guide technology at 60 GHz band
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Small signal Schottky barrier diode for ultra high - speed switching applications and protection circuit .
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Small signal Schottky barrier diode for ultra high - speed switching applications and protection circuit .
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By means of a frequency-synthesis chain which uses InP Schottky diodes as ultra - high - speed heterodyne receivers, we measured the frequencies of the observed FIR emission lines by detecting the beat notes between the 72 GHz Gunn diode, the FIR laser…
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Small signal Schottky barrier diode for ultra high - speed switching applications and protection circuit .
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Small signal Schottky barrier diode for ultra high - speed switching applications and protection circuit .
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Small signal Schottky barrier diode for ultra high - speed switching applications and protection circuit .
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