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Supplier: Mini-Circuits
Description: SAV-551+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure
- Minimum Gain: 7.6 dB
- Maximum Gain: 20.9 dB
- Noise Figure: 0.5 to 1.8 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: Mini-Circuits’ SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000 MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice
- Minimum Gain: 11.5 dB
- Maximum Gain: 24.6 dB
- Noise Figure: 0.4 to 0.9 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: SAV-541+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure
- Minimum Gain: 23.2 dB
- Maximum Gain: 23.2 dB
- Noise Figure: 0.4 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: TAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure
- Minimum Gain: 8.8 dB
- Maximum Gain: 22.9 dB
- Noise Figure: 0.4 to 1.5 dB
- Operating Temperature: -40 to 85 C
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65081-70LF is being discontinued and is not recommended for new designs. Skyworks SKY65081-70LF is a high performance, ultra-wideband Power Amplifier (PA) driver with superior output power, low noise, linearity, and efficiency. The device provides a 2.0 dB
- Frequency Range: 2,000 to 3,000 MHz
- Minimum Gain: 14.3 dB
- Maximum Gain: 14.3 dB
- Noise Figure: 2 dB
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include transistor, BJT, switching, amplification, Low-Power, Bipolar Transistor, Bipolar RF Transistors.
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65048-360LF is being discontinued and is not recommended for new designs. The SKY65048-360LF is a high performance, two-stage ultra-low noise amplifier. The device is fabricated from Skyworks advanced pHEMT process and is provided in a 2 x 2 mm, 8-pin Quad Flat
- Frequency Range: 700 to 1,200 MHz
- Minimum Gain: 16.5 dB
- Maximum Gain: 16.5 dB
- Noise Figure: 0.65 dB
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65080-70LF is being discontinued and is not recommended for new designs. Skyworks SKY65080-70LF is a high performance, ultra-wideband Power Amplifier (PA) driver with superior output power, low noise, linearity, and efficiency. The device provides a 2.3 dB
- Frequency Range: 1,500 to 2,500 MHz
- Minimum Gain: 15 dB
- Maximum Gain: 15 dB
- Noise Figure: 2.3 dB
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Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low
- Noise Figure: 2.4 dB
- Polarity: NPN
- Features: Other
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS handset and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-38143 is packaged in the miniature SOT-343
- Features: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS base station and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-34143 is packaged in the miniature
- Features: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS base station and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-33143 is packaged in the miniature
- Features: Other
- Transistor Type: PHEMT
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Supplier: Infineon Technologies AG
Description: Designers who used this product also designed with DPS368 | Pressure sensors for IoT ESD106-B1-W0201 | Low capacitance diodes for ESD protection BFP843F | Low Noise RF Transistors DPS368 | Pressure sensors for IoT ESD106-B1-W0201 | Low capacitance diodes for
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for the design of hybrid module or first or second stage of basestation LNA. The device is also suitable for
- Features: Other
- Transistor Type: PHEMT
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain ultra low noise RF transistor Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.0 dB at 6 GHz Hermetically sealed
- IC(max): 30 milliamps
- VCEO: 4 volts
- fT: 42,000 MHz
- Transistor Type: Bipolar RF Transistors
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Description: ULTRA LOW-NOISE TRANSISTOR
- VCEO: 2.25 volts
- Output Power: 0.125 watts
- Packing Method: Bulk Pack
- Features: General Purpose BJT, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION / Trans RF BJT NPN 3V 0.03A 3-Pin Thin-Type Ultra Super Mini-Mold Product overview: 2SC5436 from Renesas Electronics Corporation is a Bipolar Transistor
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION / Trans RF BJT NPN 6V 0.03A 3-Pin Thin-Type Ultra Super Mini-Mold Product overview: 2SC5435 from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification,
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION / Trans RF BJT NPN 3V 0.01A 3-Pin Ultra Super Mini-Mold Product overview: 2SC5181 from Renesas Electronics Corporation is a Bipolar Transistor for
- Features: Bipolar RF Transistors
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Description: ACCELEROMETERS ULTRA LOW NOISE 2
- Features: MOSFET, Other
- Packing Method: Tape Reel
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Supplier: Rochester Electronics
Description: Ultra Low-Noise SiGe:C Transistors for use uP to 12 GHz
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: ULTRA-LOW NOISE, LOW GATE CURREN
- V(BR)DSS: 40 volts
- VGS(off): 1.5 volts
- TJ: -40 to 125 C
- Transistor Type: JFET
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Supplier: Richardson RFPD
Description: SKY65162-70LF: 400-2700 MHz Linear Power Amplifier. Skyworks SKY65162-70LF is a high performance, ultra-wideband Power Amplifier (PA) with superior output power, low noise, high linearity, and high efficiency. The device provides excellent linearity with a 1 dB Output
- Frequency Range: 400 to 2,700 MHz
- Maximum Gain: 24 dB
- Output Power( P1dB): 29.5 dBm
- Noise Figure: 3.6 dB
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks SKY65162-70LF is a high-performance, ultra-wideband power amplifier (PA) with superior output power, low noise, high linearity, and high efficiency. The device provides excellent linearity with a 1 dB output compression point (OP1dB) of +29.5 dBm at 1960 MHz, making the
- Frequency Range: 400 to 2,700 MHz
- Minimum Gain: 13.2 dB
- Maximum Gain: 20 dB
- Minimum Operating Voltage: 5 volts
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Supplier: Infineon Technologies AG
Description: Microcontroller Arm® Cortex®-M0 ESD106-B1-W0201 | Low capacitance diodes for ESD protection BSZ017NE2LS5I | N-Channel Power MOSFET BGA524N6 | GNSS LNAs BGB707L7ESD | Multi-purpose LNAs BGA5M1BN6 | Multi-purpose LNAs BFP843F | Low Noise RF Transistors IRLHS6242 |
- Measurement Type: Gauge
- Device Category: Sensor
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0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA
A kind of high gain ultra low noise RF SiGe HBT transistor is used with Gms D 27 dB and F D 0.5 dB at 2.4 GHz.
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DC-RF Performance Improvement for Strained 0.13 μm MOSFETs mounted on a Flexible Plastic Substrate
The high performance RF transistors are suitable for low - noise ultra - wide band (UWB) (3.1-10.6 GHz) applications.
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Page 4. Semiconductor parts with 606 in root number
NPN SILICON RF TRANSISTOR FOR LOW NOISE ?· HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG .
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Social experience affects neuronal responses to male calls in adult female zebra finches
The FM transmitter included a low- noise , ultra - low -dropout voltage regulator (LP3985; National Semiconductor, Santa Clara, CA, USA), a UHF variable capacitance diode (BBY31; Philips), an NPN Silicon RF Transistor (BFP405; Siemens, Munich, Germany) and a large coil (diameter, 5 mm …
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http://www.nxp.com/documents/selection_guide/75016687.pdf
We’ve expanded the content to include several new developments and new products, including GPS LNAs with industry-leading sensitivity, ultra - low - noise LO generators, a highly efficient line … … gain blocks), and the world’s best RF power transistors for basestations, broadcast/ISM, and …
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Infineon Introduces Silicon-Germanium Carbon Technology Based RF Transistors
The new SiGe:C transistors are suitable for use in a wide range of RF and wireless applications using frequencies above 10 GHz, such as Low Noise Amplifiers (LNAs), microwave oscillators, and … … 11a, b, g), WiMAX, and Ultra Wide Band (UWB).
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New HBT transistors | News | The Engineer
The new SiGe:C transistors are suitable for use in a wide range of RF and wireless applications using frequencies above 10GHz, such as Low Noise Amplifiers (LNAs), microwave oscillators, and general … … 802.11a, b, g), WiMAX, and Ultra Wide Band (UWB).
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Tunable high resistance voltage-controlled pseudo-resistor with wide input voltage swing capability
… Harrison, R.R., and Charles, C.: ‘A low-power low- noise CMOS amplifier for neural … … Brauer, E.J.: ‘Implementing ultra -high- value floating tunable … … E.: ‘Charge-based MOS transistor modeling: the EKV model for low -power and RF IC design’ (Wiley, New …
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Vibrating RF MEMS overview: applications to wireless communications
… technology, including: (1) an RF front-end channelizer, such … … a switchable bank of ultra -high-Q µmechanical resonators … … locking and pre-scaling transistor circuits commonly used in … … on-chip device, with lower loss than present-day … … to achieve excellent phase noise performance with substantially lower …
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… in: Sep 1427 Junction, RF -Induced Negative Resistance in: May 957 Low -Lifetime Germanium, Reverse Charac … … Pressure DC, Oscillations and Noise in: Dec 1767 Discriminator … … Satellites: Aug 1332 Displaying Ultra -Fast Limit Cycles or … … Elimination in Class-B Transistor Amplifiers: Apr 834 Distortioin …