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Supplier: DataPhysics Instruments USA Corp.
Description: The OCA 200 is the contact angle goniometer and drop shape analysis system for microscopic and macroscopic structures. The software-controlled, electrically driven optic alignment enables the OCA 200 to adjust the observation angle and to focus automatically. With the trendsetting 10-fold
- Property Analyzed: Wettability / Contact Angle
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Supplier: DataPhysics Instruments USA Corp.
Description: and automated sample mapping. In order to map silicon wafers, electronic turn tables with vacuum fixation are available. They allow to access any position for contact angle measurements, even on 12? wafers. In any case, the 6.5-fold zoom lens and the high-performance camera with USB 3
- Property Analyzed: Wettability / Contact Angle
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Supplier: ASTM International
Description: covered as follows: 1.4.1 Test Method A is nondestructive and is similar to Test Method A of Test Methods F 26 except that it uses special wafer holding fixtures to orient the wafer uniquely with respect to the X-ray goniometer. The technique is capable of measuring the
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Supplier: ASTM International
Description: Diffraction 8 to 13 Method Test Method B---Laue Back Reflection 14 to 18 X-Ray Method 1.4.1 Test Method A is nondestructive and is similar to Test Method A of Test Methods F26 except that it uses special wafer holding fixtures to orient the wafer uniquely with respect to the X-ray
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Advanced Tribometer for In Situ Studies of Friction, Wear, and Contact Condition—Advanced Tribometer for Friction and Wear Studies
An electrically insulating block on the cantilever (see figure 1) and an electrically insulating coupler on the drive shaft confined electric current to flow through the carbon brush, wafer holder/ goniometer , wafer , ball, ball holder, and metal block upon application of a…
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Fundamental Principles of Optical Lithography: The Science of Microfabrication
Contact angles can be easily measured on a primed wafer using a goniome- ter , and should be in the 50–70° range for good resist adhesion11 (see Figure 1.13).
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Thickness and density measurement for new materials with combined X-ray technique
One reason is the fact that whole- wafer compatible XRD goniometer is not supplied as a fab-tool.
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Handbook of Practical X-Ray Fluorescence Analysis
The 200 mm or 300 mm wafer sits at the center of the vacuum enclosure; two arrays of solid-state detectors approach sideways the line illuminated by the beam; an external goniometer rotates the wafer for mapping the complete surface.
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X-ray photoelectron spectroscopy, high-resolution X-ray diffraction and refractive index analyses of Ti-doped lithium niobate (Ti:LiNbO3 ) nonlinear optical si...
As-grown crystals were oriented in the z-axis direction (0 0 1) using X-ray go- niometer and several wafers of ≈0.7–1 mm thickness were sliced from the grown crystals.
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Formation of α ″ iron nitride in FeN martensite: Nitrogen vacancies, iron-atom displacements, and misfit-strain energy
For each annealing step, the specimen was removed from the wafer and care was taken to replace the specimen, after tempering, at its orig- inal position on the silicon wafer and on the goniometer .
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Silicon wafers with optically specular surfaces formed by chemical polishing
The peak is not at exactly 30° for every sample because it is challenging to place the wafer pieces on the goniometer with better than 1° precision.
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Using heavy ion backscattering spectrometry (HIBS) to solve integrated circuit manufacturing problems
After insertion, a wafer is attached to a four-axis in-situ goniometer , allowing the wafer to be positioned for measurement at arbitrary x and y coordinates and for channeling of the analysis beam to reduce multiple scattering background from silicon.
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Muon cooling and acceleration experiment at TRIUMF
A 3 mm Silicon crystal wafer is mounted on a goniometer table (appropriate orientation in two planes).
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UV/Ozone Cleaning For Organics Removal On Silicon Wafers
Contact angle goniometer measurements indicated that the wafer surface reached a value of 4° prior to the time that completed visual clean occurred.