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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 2.57 mm
- Operating Temperature: -20 to 60 C
- Noise Equivalent Power (NEP): 0.0000000000000091 W/Hz½
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Supplier: MOXTEK, Inc.
Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or digital
- Photodiode Type: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray
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Supplier: Hamamatsu Photonics Europe
Description: Detector for X-ray monitor Features - Si photodiode coupled to low cost CsI scintillator - Ideal for detection of X-ray energy below 100 keV
- Active Area Diameter or Length: 5.8 mm
- Active Area Height: 5.8 mm
- Dark Current: 0.05 nA
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics Europe
Description: Back-illuminated photodiode array for X-ray non-destructive inspection The S12362-321is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. The back-illuminated photodiode array is also
- Rise Time: 6,500 ns
- Dark Current: 0.05 nA
- Array: Array
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics Europe
Description: CMOS area image sensors for X-ray imaging The S10831 is a CMOS area image sensor suitable for intra-oral X-ray imaging in dental diagnosis. S10831 has 2.21 megapixels (1300 × 1700) with a pixel size of 20 × 20 μm. An FOP (fiber optic plate) is used as an input window,
- Pixel Size: 20 µm
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Supplier: Hamamatsu Photonics Europe
Description: Photodiode array combined with signal processing IC for X-ray detection This is a photodiode array with an amplifier and a phosphor sheet attached to the photosensitive area for X-ray detection. X-ray tolerance has been improved compared to the
- Array: Array
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray
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Supplier: OSI Optoelectronics
Description: also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods. Indirect and direct.
- Sensitivity: 0.54 A/W
- Active Area Diameter or Length: 5.8 mm
- Active Area Height: 5.9 mm
- Operating Temperature: -25 to 75 C
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Supplier: OSI Optoelectronics
Description: also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods. Indirect and direct.
- Sensitivity: 0.58 A/W
- Spectral Response Range: 350 to 1,100 nm
- Rise Time: 3 ns
- Operating Temperature: -40 to 100 C
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Supplier: Opto Diode Corporation, an ITW Company
Description: extreme ultraviolet (EUV), and soft X-rays.
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Supplier: First Sensor AG
Description: Alpha, beta, gamma, and X-ray radiation can be detected with silicon PIN photodiodes either directly via the absorption in the crystal lattice or indirectly via the measurement of the luminescence radiation of a scintillation crystal. The Series X from First Sensor
- Active Area Diameter or Length: 10.000000000000002 mm
- Rise Time: 1,000 ns
- Dark Current: 1.5 to 2.5 nA
- Features: Other
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Supplier: Changchun Yutai Optics Co., Ltd.
Description: thermal radiation meters. 3. Optical lenses and protectors: protectors for laser processing heads, and so on. 4. Scintillator: photodiodes,It is used in X-ray and gamma-ray detectors.
- Parallelism or Wedge Angle: 180 arcmin
- Surface Flatness: λ/10
- Surface Quality: 60-40 Scratch / Dig
- Features: Specialty / Other
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Hamamatsu Photonics introduces its G1719X series of InGaAs PIN Photodiodes for long wavelengths. These compact, surface-mounted NIR sensors with low dark current are designed for infrared applications, including gas sensing, laser applied measurements, and remote temperature sensing (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics Europe -
Hamamatsu Photonics unveils the G1682x series, an advanced, non-cooled InGaAs linear image sensor specifically engineered for near-infrared applications. With its compact design and high-performance capabilities, the G1682x series is poised to transform the field of multichannel (read more)
Browse Uncategorized Products Datasheets for Hamamatsu Photonics Europe -
Integrating a high-power 850nm infrared VCSEL emitter or infrared LED emitter, equipped with a high-sensitivity photodiode receiver and an internal integrated physical infrared filter, HPS-16X series sensors can measure longer distance and improve the anti-ambient light ability (read more)
Browse Time of Flight Optical Sensors Datasheets for Hypersen Technologies Co., Ltd. -
stability, better exchangeability, wider measuring ranges, etc. Their Gamma Sensor Module consists of a cesium iodide crystal, a photodiode, and a high-gain preamplifier that can be used to (read more)
Browse Gas Sensors Datasheets for Electro Optical Components, Inc. -
Vishay’s VEML4031X00 sets a new standard in ambient light sensing as the industry’s first AEC-Q100 qualified rectangular ALS device. Engineered for modern automotive designs, this compact 4.38 mm × 1.45 mm sensor features a low profile of (read more)
Browse Light Emitting Diodes (LED) Datasheets for New Yorker Electronics Co., Inc. -
crystal, a photodiode, and a high-gain preamplifier that can be used to measure X and γ radiation from 50keV to 3MeV. It features high sensitivity and a fast response time (of about a second) to a very minor change of X and γ ( 0.01 μSv/h ). The (read more)
Browse Gas Sensors Datasheets for Electro Optical Components, Inc. -
Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for accurate (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics Europe -
Hamamatsu Photonics announces the new S16495 silicon photodiode, explicitly engineered for high-sensitivity detection at 310 nm. This latest addition to our extensive line of photonic (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics Europe -
Introducing Hamamatsu Photonics' new Si APD S17353 Series sensors, engineered for exceptional sensitivity and minimal noise across a wide wavelength range of up to 800 nm.
(read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics Europe -
1. Product Overview The IMS ISL700_64A is a highly integrated CMOS photoelectric sensor that integrates 64 photodiodes(PDs) and their associated signal-processing circuitry. It is widely used in multi-mode smart photoelectric sensors based on distance measurement (read more)
Browse Optical Triangulation Position Sensors Datasheets for Intellisense Microelectronics Ltd.
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Silicon Photodiodes with Stable, Near-Theoretical Quantum Efficiency in the Soft X-Ray Region (.pdf)
Silicon photodiodes have practically no carrier recombination at the Si-Si02 interface or in the front diffused region have been developed by defect-free n-type impurity diffusion into the p-type silicon. These photodiodes exhibit very high quantum effiencies in the 10 eV to 150 eV photon energy
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Developing a Scattered Light Detection Instrument - using USB-2533
OSI Optoelectronics is a manufacturer of standard and custom photodiodes and optical sensors for a wide range of applications such as medical, commercial, military, x-ray products, and telecommunications.
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X-Ray Laser Plasma Source For Calibration
We compare the electric signal delivered by the X ray photodiode to the blackening of an HP 5 Ilford photographic film on which is recorded the streak image.
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X-Ray Detected Magnetic Resonance at Sub-THz Frequencies Using a High Power Gyrotron Source
X Ray Photodiode .
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X Rays From Laser -Produced Plasmas
If only the harder part of the spectrum (Z lkeV) is measured with a filtered x ray photodiode , the detected radiation shows strong variations with Z9,16",11.
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A radiation foil bolometer for measuring the energy losses of fast Z-pinches
Figure 5 shows oscillograms of the pinch current and a signal of soft X rays obtained in one of the exper iments (no. 4810) with a vacuum X ray photodiode sensitive to photon energies in the range 90–400 eV [7].
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Measurement of the temporal and spectral characteristics of silicon p-i-n photodiodes in the soft x-ray range
Generally speaking, the absolute spectrally selective calibration of any x - ray photodiode can be achieved by means of a primary standard detector.10–14 Moreover, tech- niques are known for the absolute calibration of photodiodes using a primary radiation standard ͑e.g., synchronous …
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First spectroscopic X-ray and beta results from a 400 μm diameter Al0.8Ga0.2As photodiode
The ternary semiconductor compound AlxGa1−xAs has many properties which make it a desirable material for the fabrication of X - ray photodiodes .
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Progress in Ultrafast Intense Laser Science Volume I
Temporal profile of laser pulse is monitored for each laser shot with a fast photodiode, that provides also trigger signal to permit oscilloscope synchro- nization with X-ray signal measured by Quantrad PIN X - ray photodiode model 100-PIN-125N.
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Noise in hybrid photodiode array: CCD x-ray image detectors for digital mammography
Absorption of x rays in photodiode .
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Absolute measurements of soft X-ray emission by laser plasma using thermoluminescent dosimeters and semiconductor detectors
Schematic for X - ray photodiode detector used for the measurement.
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Determination of the electron-hole pair creation energy in Al0.8Ga0.2As
… called the electron-hole pair creation energy) in the compound semiconductor Al0.8Ga0.2As has been experimentally measured for the first time at X-ray energies using 55Fe and 109Cd radioisotope sources and a GaAs X - ray photodiode as a reference detector.