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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of
- Active Area Diameter or Length: 2.57 mm
- Noise Equivalent Power (NEP): 9.10E-15 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of
- Active Area Diameter or Length: 11.33 mm
- Noise Equivalent Power (NEP): 4.10E-14 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of
- Active Area Diameter or Length: 5 mm
- Noise Equivalent Power (NEP): 1.80E-14 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of
- Active Area Diameter or Length: 10 mm
- Active Area Height: 10 mm
- Noise Equivalent Power (NEP): 4.10E-14 W/Hz½
- Operating Temperature: -20 to 60 C
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Supplier: Hamamatsu Photonics
Description: Detector for X-ray monitor Features - Si photodiode coupled to low cost CsI scintillator - Ideal for detection of X-ray energy below 100 keV
- Active Area Diameter or Length: 5.8 mm
- Active Area Height: 5.8 mm
- Dark Current: 0.0500 nA
- Photodiode Material: Silicon
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Supplier: MOXTEK, Inc.
Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Spectral Response: X-ray
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Supplier: MOXTEK, Inc.
Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Spectral Response: X-ray
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Supplier: Hamamatsu Photonics
Description: Flat surface ideal for bonding to scintillator The S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 µm). When bonded to a scintillator, the flat surface allows highly tight coupling to the scintillator so bubbles are unlikely to
- Active Area Diameter or Length: 10 mm
- Active Area Height: 10 mm
- Dark Current: 6 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: Detector for X-ray monitors Features - High sensitivity, high reliability photodiode with ceramic scintillator - High X-ray sensitivity: 1.8 times that of CWO - Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms - Unlike CsI, has no deliquescence
- Active Area Diameter or Length: 5.8 mm
- Active Area Height: 5.8 mm
- Dark Current: 0.0500 nA
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: Large active area Si PIN photodiodes Features - Sensitivity matching with BGO and CsI(TI) scintillators - Low capacitance - High-speed response - High stability - Good energy resolution
- Active Area Diameter or Length: 10 mm
- Active Area Height: 20 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: First Sensor AG
Description: Alpha, beta, gamma, and X-ray radiation can be detected with silicon PIN photodiodes either directly via the absorption in the crystal lattice or indirectly via the measurement of the luminescence radiation of a scintillation crystal. The Series X from First Sensor features
- Active Area Diameter or Length: 10 mm
- Dark Current: 1.5 to 2.5 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: Opto Diode Corporation, an ITW Company
Description: Opto Diode offers a full line of IRD UV photodiodes with unparalleled 100% internal quantum efficiency, stability and radiation hardness. With photon detection to 1 nm and electron detection to 200 eV, these IRD UV devices are ideal for the most critical measurements of visible, ultraviolet
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Supplier: Changchun Yutai Optics Co., Ltd.
Description: industrial thermal radiation meters. 3. Optical lenses and protectors: protectors for laser processing heads, and so on. 4. Scintillator: photodiodes,It is used in X-ray and gamma-ray detectors.
- Materials: Zinc Selenide, Specialty / Other
- Parallelism or Wedge Angle: 180 arcmin
- Surface Flatness: λ/10
- Surface Quality: 60-40 Scratch / Dig
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Hamamatsu Photonics introduces its G1719X series of InGaAs PIN Photodiodes for long wavelengths. These compact, surface-mounted NIR sensors with low dark current are designed for infrared applications, including gas sensing, laser applied measurements, and remote temperature sensing (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Hamamatsu Photonics unveils the G1682x series, an advanced, non-cooled InGaAs linear image sensor specifically engineered for near-infrared applications. With its compact design and high-performance capabilities, the G1682x series is poised to transform the field of multichannel (read more)
Browse Uncategorized Products Datasheets for Hamamatsu Photonics -
Integrating a high-power 850nm infrared VCSEL emitter or infrared LED emitter, equipped with a high-sensitivity photodiode receiver and an internal integrated physical infrared filter, HPS-16X series sensors can measure longer distance and improve the anti-ambient light ability (read more)
Browse Time of Flight Optical Sensors Datasheets for Hypersen Technologies Co., Ltd. -
stability, better exchangeability, wider measuring ranges, etc. Their Gamma Sensor Module consists of a cesium iodide crystal, a photodiode, and a high-gain preamplifier that can be used to (read more)
Browse Gas Sensors Datasheets for Electro Optical Components, Inc. -
Vishay’s VEML4031X00 sets a new standard in ambient light sensing as the industry’s first AEC-Q100 qualified rectangular ALS device. Engineered for modern automotive designs, this compact 4.38 mm × 1.45 mm sensor features a low profile of (read more)
Browse Light Emitting Diodes (LED) Datasheets for New Yorker Electronics Co., Inc. -
crystal, a photodiode, and a high-gain preamplifier that can be used to measure X and γ radiation from 50keV to 3MeV. It features high sensitivity and a fast response time (of about a second) to a very minor change of X and γ ( 0.01 μSv/h ). The (read more)
Browse Gas Sensors Datasheets for Electro Optical Components, Inc. -
Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for accurate (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Hamamatsu Photonics announces the new S16495 silicon photodiode, explicitly engineered for high-sensitivity detection at 310 nm. This latest addition to our extensive line of photonic (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Introducing Hamamatsu Photonics' new Si APD S17353 Series sensors, engineered for exceptional sensitivity and minimal noise across a wide wavelength range of up to 800 nm.
(read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
1. Product Overview The IMS ISL700_64A is a highly integrated CMOS photoelectric sensor that integrates 64 photodiodes(PDs) and their associated signal-processing circuitry. It is widely used in multi-mode smart photoelectric sensors based on distance measurement (read more)
Browse Optical Triangulation Position Sensors Datasheets for Intellisense Microelectronics Ltd.
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Silicon Photodiodes with Stable, Near-Theoretical Quantum Efficiency in the Soft X-Ray Region (.pdf)
Silicon photodiodes have practically no carrier recombination at the Si-Si02 interface or in the front diffused region have been developed by defect-free n-type impurity diffusion into the p-type silicon. These photodiodes exhibit very high quantum effiencies in the 10 eV to 150 eV photon energy
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Developing a Scattered Light Detection Instrument - using USB-2533
OSI Optoelectronics is a manufacturer of standard and custom photodiodes and optical sensors for a wide range of applications such as medical, commercial, military, x-ray products, and telecommunications.
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X-Ray Laser Plasma Source For Calibration
We compare the electric signal delivered by the X ray photodiode to the blackening of an HP 5 Ilford photographic film on which is recorded the streak image.
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X-Ray Detected Magnetic Resonance at Sub-THz Frequencies Using a High Power Gyrotron Source
X Ray Photodiode .
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X Rays From Laser -Produced Plasmas
If only the harder part of the spectrum (Z lkeV) is measured with a filtered x ray photodiode , the detected radiation shows strong variations with Z9,16",11.
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A radiation foil bolometer for measuring the energy losses of fast Z-pinches
Figure 5 shows oscillograms of the pinch current and a signal of soft X rays obtained in one of the exper iments (no. 4810) with a vacuum X ray photodiode sensitive to photon energies in the range 90–400 eV [7].
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Measurement of the temporal and spectral characteristics of silicon p-i-n photodiodes in the soft x-ray range
Generally speaking, the absolute spectrally selective calibration of any x - ray photodiode can be achieved by means of a primary standard detector.10–14 Moreover, tech- niques are known for the absolute calibration of photodiodes using a primary radiation standard ͑e.g., synchronous …
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First spectroscopic X-ray and beta results from a 400 μm diameter Al0.8Ga0.2As photodiode
The ternary semiconductor compound AlxGa1−xAs has many properties which make it a desirable material for the fabrication of X - ray photodiodes .
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Progress in Ultrafast Intense Laser Science Volume I
Temporal profile of laser pulse is monitored for each laser shot with a fast photodiode, that provides also trigger signal to permit oscilloscope synchro- nization with X-ray signal measured by Quantrad PIN X - ray photodiode model 100-PIN-125N.
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Noise in hybrid photodiode array: CCD x-ray image detectors for digital mammography
Absorption of x rays in photodiode .
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Absolute measurements of soft X-ray emission by laser plasma using thermoluminescent dosimeters and semiconductor detectors
Schematic for X - ray photodiode detector used for the measurement.
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Determination of the electron-hole pair creation energy in Al0.8Ga0.2As
… called the electron-hole pair creation energy) in the compound semiconductor Al0.8Ga0.2As has been experimentally measured for the first time at X-ray energies using 55Fe and 109Cd radioisotope sources and a GaAs X - ray photodiode as a reference detector.