The following abbreviations are used in this book:

AB

antibonding

AC

alternating current

AFM

atomic force microscopy

ALE

atomic layer epitaxy

BESOI

bond-and-etchback silicon-on-insulator

BET

Brunauer-Emmett-Teller

CB

conduction band

CBD

chemical bath deposition

CCD

charge coupled device

CESR

conduction electron spin resonance

CESR

free electron spin resonance

CL

cathodoluminescence or chemiluminescence

CMOS

complementary metal oxide semiconductor

COB

chip on board

CPE

constant phase elements

CVD

chemical vapour deposition

CW

continuous wave

D

dark

DC

direct current

DCD

double crystal diffractometry

DLA

diffusion limited aggregation

DRAM

dynamic random access memory

DSC

differential scanning calorimetry

EC

electrochemical

ECR

electron cyclotron resonance

EELS

electron energy loss spectroscopy

EL

electroluminescence

ELTRAN

epitaxial layer transfer

EMA

effective mass approximation

EMA

effective medium theory

EMP

empirical

EMT

effective mass theory

ENDOR

electron nuclear double resonance

EPR

electron paramagnetic resonance

EPS

empirical pseudopotential

EQE

external quantum efficiency

ERDA

elastic recoil detection analysis

ESR

electron spin resonance

ETB

empirical tight binding

EXAFS

extended X-ray absorption fine structure

FIB

focused ion beam

FIPOS

full isolation by porous oxidised silicon

FTIR

Fourier transform infrared spectroscopy

FWHM

full width at half maximum

GID

grazing incidence diffraction

HIERDA

heavy ion elastic recoil detection analysis

HOMO

highest occupied molecular orbital

HRSEM

high resolution scanning electron microscopy

HRTEM

high resolution transmission electron microscopy

IBA

ion beam analysis

IC

integrated circuit

EPOS

isolation by porous oxidised silicon

IQE

internal quantum efficiency

IR

infrared

IRE

internal reference electrode

ISE

indentation size effect

ISFET

ion sensitive field effect transistor

ISLANDS

isolation by self-limiting anodisation of an n