Properties of Silicon Carbide

Properties of Silicon Carbide

Edited by GARY L HARRIS
Materials Science Research Center of Excellence Howard University,
Washington, DC, USA
Published by: The Institution of Electrical Engineers,
London, United Kingdom

2006: The Institution of Electrical Engineers

Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act, 1988, this publication may be reproduced, stored or transmitted, in any forms or by any means, only with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms of licences issued by the Copyright Licensing Agency. Inquiries concerning reproduction outside those terms should be sent to the publishers at the undermentioned address:

Institution of Electrical Engineers
Michael Faraday House,
Six Hills Way, Stevenage,
Herts. SG1 2AY, United Kingdom

While the editor and the publishers believe that the information and guidance given in this work is correct, all parties must rely upon their own skill and judgment when making use of it. Neither the editor nor the publishers assume any liability to anyone for any loss or damage caused by any error or omission in the work, whether such error or omission is the result of negligence or any other cause. Any and all such liability is disclaimed.

The moral right of the authors to be identified as authors of this work has been asserted by them in accordance with the Copyright, Designs and Patents Act 1988.

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