A INTRODUCTION

Production of large sized bulk SiC has been long expected to realise electronic devices using this material. Lely's work was a guide to produce reasonable sized crystals for academic research [1,2]; however, large sized bulk material was not realised using this method. For a long time, sublimation growth was carried out without using seed crystals [3 5]. Surface morphology and impurity effects of the substrate were studied using the sublimation furnace [6 10]. Recently, wafers of SiC about 2" in diameter were made from SiC bulk material produced by sublimation growth [11]. Many data are brought together in this Datareview.

B SINGLE CRYSTAL BULK GROWTH

In sublimation growth, sublimed SiC is transported in the vapour phase to a SiC seed crystal at a lower temperature. Typical parameters used to control sublimation growth are substrate temperature, source temperature, temperature gradient between substrate and source and ambient pressure. These parameters affect growth rate and the quality of the crystal. Dissociation of SiC at high temperature in high vacuum was studied using a mass spectrometer. These data are useful in considering the partial pressures of chemical species [12 14].

Two types of crucible are used for sublimation growth. One is composed of a single wall crucible made of graphite as shown in FIGURE 1(a) [15 23] and the other is a double wall or coaxially arranged cylinder type crucible as shown in FIGURE 1(b) [24 26]. In the former case, source material at high temperature is directly...