Properties of Silicon Carbide
Fully indexed with over 1000 references to published and unpublished sources, this book draws together the expert knowledge of numerous researchers from around the world to completely characterize the SiC system.
TABLE OF CONTENTS Properties of Silicon Carbide
Abbreviations
The following abbreviations are used throughout the book.
| ?-Sic | hexagonal silicon carbide |
| A | acceptor |
| AC | alternating current |
| AES | Auger elctron spectroscopy |
| APB | anti-phase boundary |
| ASA | atomic sphere approximation |
| ?-Sic | cubic silicon carbide |
| BE | bound exciton |
| BJT | bipolar junction transistor |
| BZ | Brillouin zone |
| CFLPE | container free liquid phase epitaxy |
| CL | cathodoluminescence |
| CMOS | complementary metal-oxide-semiconductor |
| C-V | capacitance-voltage |
| CVD | chemical vapour deposition |
| D | donor |
| DAP | donor-acceptor pairs |
| DAS | dimer-adatom stacking fault |
| DC | direct current |
| DLTS | deep level transient spectroscopy |
| DPB | double position boundary |
| EBIC | electron beam induced current |
| ECR | electron cyclotron resonance |
| EELS | electon energy loss spectroscopy |
| EHL | electron hole liquid |
| EL | electroluminescence |
| EMF | electro-motive force |
| EP | empirical pseudopotential |
| EPM | empirical pseudopotential method |
| EPR | electron paramagnetic resonance |
| ESD | electron stimulated desorption |
| ESR | electron spin resonance |
| ETB | empirical tight binding |
| FB | free-to-bound |
| FET | field effect transistor |
| G-V | conductance-voltage |
| HF | hyperfine |
| IC | integrated circuit |
| IDB | inversion domain boundary |
| IMPATT | impact ionization avalanche transient time |
| IR | infrared |
| I-V | current-voltage |
| JFET | junction field effect transistor |
| JFM | Johnson's figure of merit |
| KFM | Keyes' figure of merit |
| LA | longitudinal acoustic |
| LCAO | linear combination of atomic orbitals |
| LDA | local density approximation |
| LED | light emitting diode |
| LEED | low energy electron diffraction |
| LMTO | linear muffin-tin orbital |
| LO | longitudinal optical |
| LPE | liquid phase epitaxy |
| LTLPE | low temperature liquid phase epitaxy |
| LUC-MINDO | large unit cell-modified intermediate neglect of differential overlap |
| LVB | lower valence band |
| LZ | large zone |
| MBE | molecular beam epitaxy |
| MEIS | medium energy ion scattering |
| MESFET | metal semiconductor field effect transistor |
| MINDO | modified intermediate neglect of differential overlap |
| MIS | metal-insulator-semiconductor |
| MOCVD |
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