Properties of Silicon Carbide
Fully indexed with over 1000 references to published and unpublished sources, this book draws together the expert knowledge of numerous researchers from around the world to completely characterize the SiC system.
TABLE OF CONTENTS Properties of Silicon Carbide
Chapter 1: Basic Physical Properties
1.1 Density of SiC
G.L. Harris
February 1995
A ROOM TEMPERATURE
Experimental measurements [1 3] place the density of SiC in the range from 3.166 to 3.24878 g cm -3 depending on the polytype. Most of these measurements were obtained by using X-ray data and calculating the density from
| (1) |  |
where M is the gram formula weight (40.09715), V is the volume of the unit cell (i.e. the cube of the lattice parameter for 3C), N is Avogadro's constant (6.0221367 x 10 23 per mole) and 4 is the number of formula units in the cell.
| Density (g cm -3) | Polytype | Temperature (K) | Ref & comments |
|---|---|---|---|
| 3.214 | 2H | 293 | [2] |
| 3.166 | 3C | 300 | [4] |
| 3.21427 | 3C | 300 | Using Eqn (1) and X-ray data in [1] |
| 3.210 | 3C | 300 | [3] |
| 3.211 | 6H | 300 | [3] |
| 3.24878 | 6H | 300 | Using Eqn (1) and X-ray data in [1] |
B DATA AT OTHER TEMPERATURES
Data at other temperatures can easily be obtained by using Eqn (1) and the lattice parameter measurements as a function of temperature from [1].
REFERENCES
[1] A. Taylor, R.M. Jones [ Proc. Conf on Silicon Carbide, Boston, USA, 1959 ( Pergamon Press, New York, 1960) p.147 ]
[2] R.F. Adamsky, K.M. Merz [ Z. Kristallogr. (Germany) vol.3 ( 1959) p.350 ]
[3] A.H. Mesquita de Gomes [ Acta Crystallogr. (Denmark) vol.23 ( 1967) p.610 ]
[4] E.L. Kern, D.W. Hamil, H.W. Deem, H.D. Sheets [ Mater. Res.
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