It is a pleasure to present this latest EMIS book on InP-related materials and devices. Since the previous EMIS book on this subject, published in 1991, there has been significant growth in the use of InP, but the context defined by device applications has changed. The challenge was to prepare a new book that includes material that is essential to the use of InP in these new applications, yet which is complementary where possible to the old book.

Initially, it was believed that InP would find its niche in microwave applications as a transistor or as a Gunn-effect oscillator. It is increasingly used as a substrate for epitaxial growth to support GalnAsP lasers for optical fibre telecommunications and to fabricate GalnAs/AlInAs pseudomorphic high electron mobility transistors which have proved to be a more desirable choice for microwave generation and amplification. There are applications where InP is used for its own optoelectronic properties. A good example is solar cells, where the near optimum spectral response of InP plus its superior resistance to radiation damage combine to make InP the best available choice, based on performance, for power generation in space vehicles.

Unfortunately, the choice of InP is sometimes restricted by its cost. InP substrates remain significantly more costly that those made from GaAs, and even more so when compared to silicon. In addition, the technology of InP substrate manufacture is much more difficult than that for either GaAs or silicon. This situation is not simply the result of lower market demand,...