ADC

analogue to digital converter

AE

activation energy

AFM

atomic force microscopy

AM

amplitude modulated

AMO

air mass zero

APMOVPE

atmospheric pressure metal-organic vapour phase epitaxy

AS

admittance spectroscopy

ASE

amplified spontaneous emission

BE

band-edge

BER

bit error rate

BH

buried heterostructure

BJT

bipolar junction transistor

CATV

cable television

CBE

chemical beam epitaxy

CLEFT

cleavage of a lateral epitaxial film for transfer to another substrate

CML

current mode logic

CPU

central processing unit

CW

continuous wave

D-A

donor-acceptor

DALA

disorder-activated longitudinal acoustic

DALO

disorder-activated longitudinal optical

DATA

disorder-activated transverse acoustic

DATO

disorder-activated transverse optical

DBR

distributed Bragg reflector

DC

direct current

DEMUX

demultiplexer

DFB

distributed feedback

DGF

dynamic gradient freeze

DH

double heterostructure

DHBT

double heterojunction bipolar transistor

DI

deionised water

DLOS

deep level optical spectroscopy

DLTS

deep level transient spectroscopy

DMZ

dimethylzinc

DRO

dielectric resonator oscillator

DSL

dilute Sirtl and light

EBIC

electron beam induced current

ECL

emitter coupled logic

EDX

energy dispersive X-ray analysis

EPD

etch pit density

EPR

electron paramagnetic resonance

ER

etch rate

ESR

electron spin resonance

FET

field effect transistor

FIR

far infrared

FK

Franz-Keldysh

FSR

free spectral range

FWHM

full width at half maximum

GCSOA

gain-clamped semiconductor optical amplifier

GSMBE

gas source molecular beam epitaxy

HBT

heterojunction bipolar transistor

HEMT

high electron mobility transistor

HH

heavy-hole

HJ

heterojunction

HPL

hot photoluminescence

IC

integrated circuit

IF

intermediate frequency

MPATT

impact avalanche transit-time

IPE

internal photoemission

IR

infrared

ISBT

intersubband transition

ISE

in-situ etching

ITO

indium tin oxide

JFET

junction field effect transistor

LA

longitudinal acoustic