2DEG

1

two-dimensional electron gas

AES

3

Auger electron spectroscopy

ALE

2

atomic layer epitaxy

AR

3

anti-reflection

AUD

3

advanced unified defect (model)

BJT

1, 9

bipolar junction transistor

BOE

8

buffered-oxide etch

CAIBE

5

chemically assisted ion-beam etching

CBM

3

conduction band minimum

CMOS

1, 3, 8, 10

complementary metal oxide semiconductor

CRT

2

cathode-ray tube

C-V

2, 3, 7

current-voltage

CZ

1

Czochralski

DBR

10

distributed Bragg reflector

DC

2, 3, 5, 7 9

direct current

DEB

3, 4, 10

distributed feedback

DH

1

double heterostructure

DHBT

9

double heterojunction bipolar transistor

DI

3, 4

de-ionised

DIGS

3

disorder-induced gap state (model)

DLTS

2

deep level transient spectroscopy

EBIC

2

electron-beam-induced current

ECR

3, 5, 8, 9

electron-cyclotron resonance

EDS

2

energy-dispersive spectrometer

EDX

3, 9

energy-dispersive X-ray analysis

EMP

2

electron microprobe (analysis)

EW

1

electronic warfare

EWF

3

effective work function (model)

FET

1 4, 6 9

field effect transistor

FIB

2, 5

focused ion beam

FWHM

2

full width at half maximum

GMR

3

giant magnetoresistance

GOI

10

GaAs-on-insulator

HBT

1 6, 8, 9

heterojunction bipolar transistor

HDP

3

high-density plasma

HDPE

5

high-density-plasma etching

HEMT

1, 2, 5, 7, 8

high electron mobility transistor

IBAE

5

ion-beam-assisted etching

IBE

5

ion-beam etching

IC

1

integrated circuit

ICP

3, 5, 9

inductively coupled plasma

IMPATT

1

impact avalanche and transit time

IR

6, 7

infrared

JFET

1

junction field effect transistor

LCR

2

inductance, capacitance, resistance

LD

1, 9

laser diode

LDD

7, 8

lightly...